Level shifter for high speed and wide voltage range interface

APPLICATION NOTE
Level Shifter for Multi Voltage Rail I/O Interconnection
Union Semiconductor, Inc.
Introduction
Level shifter circuits are the bridges that connect low core voltage components to
high I/O interface voltage circuits.
The UM320X and UM330X series level
translator are designed to cost effectively address these voltage translation needs
with high integration components. To achieve high performance and high
integration density, the transistor dimensions are aggressively scaled down with
an ultra deep submicron process. Low power dissipation is achieved by scaling
down the supply voltage under 1.0V.
TheUM330X series are buffered type auto direction sensing voltage translator
architectures, while UM320X series are switch type auto direction sensing
voltage translator architectures. Neither type of architecture requires a DIR
control signal to establish the direction of data flow. The buffered type
architecture is designed to be exclusively connected and interfaced with a
push-pull driver and is capable of driving light capacitive or high impedance
loads. Switch type translators that are designed to interface with open drain
drivers, such as the I2C bus.
The need for voltage level translation
Voltage level translation is becoming increasingly significant in today's electronic
systems. Digital switching level standards have continued to progress toward
different voltage levels, resulting in system incompatibilities. For two devices to
interface reliably, the output driver voltages must be compatible with receiver
input thresholds. For this condition to be met in mixed voltage systems, a voltage
translator circuit is often required. Similar incompatibilities can result from
interfacing circuits with different ground references.
Fig 1.shows the reference circuit for the level-shifted Atmel® ATA6870 SPI. This
reference circuit was implemented using the Atmel ATA6870-DK application kit.
The kit consists of two application boards: the AVR® host controller and the
Atmel ATA6870-DK battery management board. Since the AVR host controller
and the battery management board are referenced to different ground potentials
(GND_AVR and GND_BMS), the SPI and system clock lines must be level shifted
between the two boards for communication to occur.
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APPLICATION NOTE
Figure 1.Atmel ATA6870-DK level shifted SPI implementation
Figure 2.Input level shifter
Input level shifting from the microcontroller to the Atmel® ATA6870 is
accomplished through the use of the circuit shown in Figure 2. All Atmel
ATA6870 input SPI signals (SCK, MOSI, CS_N) and the system reference clock
(used by the ADC) must use this circuit. The level shifter utilizes a high-speed
switching NPN transistor and voltage divider to up-convert the low-level
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APPLICATION NOTE
microcontroller output voltage to the regulated, pulled-up Atmel ATA6870
voltage, VDDHVM (3.3V + VMCU).
Figure 3.Output level shifter using discrete components.
Output level shifting from the Atmel ATA6870 to the microcontroller is
accomplished by the circuit shown in Figure 3. All Atmel ATA6870 output SPI
signals must use this circuit. The level shifter utilizes a switching PMOS
transistor and a voltage divider to down-convert the Atmel ATA6870-DK output
signal to the input voltage required by the microcontroller.
The UM330X translators are designed to replace the above discrete circuits to
offer an integrated solution with reduced parts count.
UM320X translators are for replacing the discrete circuit shown in Fig 4 to
interface with open drain drivers and used in applications, such as I2C bus.
Figure 4. Switch type level shifter using discrete components
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APPLICATION NOTE
The UM330X and UM320X family of voltage translators
Union's push-pull buffered type UM330X translators are designed to exclusively
be connected and interfaced with push-pull CMOS drivers. They are capable of
driving a light capacitive or high impedance loads in applications such as SDIO or
SPI bus.
Open-drain switch typeUM320X translators are designed to interface with
open-drain drivers and used in applications such as I2C bus.
Table 1 summarizes Union Semi’s level shifter product offerings. Union offers 2, 4,
8 bit width devices supplied in CSP, QFN and TSSOP packages.
Product
P/N
UM3302H
UM3304H
UM3304Q
UM3304QT
UM3308
UM3202H
UM3202Q
UM3202A
UM3204H
UM3204Q
UM3204UE
Brief Description
2 Bit, Push Pull
Buffer Type
4 Bit, Push Pull
Buffer Type
8 Bit, Push Pull
Buffer Type
2 Bit, Open Drain
Switch Type
4 Bit, Open Drain
Switch Type
VCCA
Range
1.2~3.6
VCCB
Range
1.65~5.5
1.2~3.6
1.2~3.6
1.2~3.6
1.2~3.6
1.65~5.5
1.65~5.5
1.65~5.5
1.65~5.5
1.65~3.6
1.65~3.6
1.65~3.6
1.65~3.6
1.65~3.6
1.65~3.6
1.65~5.5
1.65~5.5
1.65~5.5
1.65~5.5
1.65~5.5
1.65~5.5
Max
Data
Rate (Mbps)
100
B Port ESD
Rating (KV)
±15
Package
CSP2010-8
CSP2015-12
QFN3030-14
QFN2816-16
CSP3025-20
24
Mbps(Push
Pull)
2
Mbps(Open
Drain)
±15
CSP2010-8
DFN1713-8
QFN1814-10
CSP2015-12
QFN3030-14
TSSOP14
Figure 5 shows the basic architecture block diagram of a single channel of the
UM330X device.
Figure 5. Block diagram for one of UM330X channel
In a DC state, the output drivers of the UM330X can maintain a high or low logic
state. The drivers are designed to be weak so that they can be overdriven by an
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APPLICATION NOTE
external driver when data on the bus starts to flow in the opposite direction. The
output of the one-shot detects rising or falling edges on the A or B port. During a
rising edge, the one-shot turns on the PMOS transistors(T1,T3) for a short
duration, this speeds up the low-to-high transition. Similarly, during a falling
edge, a one shot turns on the NMOS transistors(T2,T4) for a short duration, this
speeds up the high-to-low transition. One shot circuits improve signal integrity
for optimum duplication of the original signal.
The basic block diagram architecture of a single channel of UM320X series is
shown in Figure 6.
Figure 6. Block diagram of UM320X I/O Cell
The UM320X translators are FET-based architectures that use an N-channel
pass-gate tansistor to open and close the connection between the A-port and
B-port. When a driver connected to A or B port is low, the opposite port is, in turn,
pulled low by the N pass-gate transistor. This pass-transistor type voltage
translator is ideal for down-translation and over-voltage protection. Each A-port
I/O has an internal pull-up resistor to VCCA, and each B-port I/O has an internal
pull-up resistor to VCCB. During a rising edge, the one-shot turns on the PMOS
transistors(PU1,PU2) for a short duration,which speeds up the low-to-high
transition.
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APPLICATION NOTE
Integrated one shots in the Union UM330X and UM320X dramaticaly improve
transition times over discrete component implementations. Fig 7 is waveform
from translator circuit using discrete component.
Figure 7. 1.8V to 3.3V conversion using discrete components, f=400KHz, 1us/div horizontal,
1V/div vertical
Fig 8’s waveform exhibits higher integrity using integrated solution.
Figure 8. 1.8V to 3.3V conversion using UM3202 , f=400KHz, 1us/div horizontal, 1V/div
vertical
The UM320X and UM330X both have an OE input that is used to disable the
device by setting OE=low, which places all I/O’s in the high impedance(Hi-Z)state.
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APPLICATION NOTE
When the output enable is high, the UM320X device consumes low power about
14uA while UM330X is 5uA. When the output enable is low, the UM320X and
UM330X translator buffer will be disabled and the outputs are put into a high
impedance stage for increased power saving. The OE input circuit is referenced
to the VCCA power supply and when the device is disabled, the pull-up resistors
are disabled in UM320X, and the 4k Ω buffer and the one-shot for both the
A-port and B-Port are also disabled in UM330X. If the application does not
require output enable control, the OE pin should be tied to the VCCA supply. The
designer should never leave the OE pin floating.
Under partial power down (VCCA or VCCB = 0) conditions, the outputs are also
disabled and put into a high-impedance state. This feature is referred to as VCC
isolation, if VCCB=0V, the A-Port is disabled; likewise, if VCCA=0V, the B-Port will
be disabled. This cut-off circuitry disables the outputs preventing damaging
current backflow through the device when these devices are powered-down.
These translators were architected for driving high-impedance loads. The
one-shot duration has been set to best optimize trade-offs of dynamic current
consumption(ICC), load driving capability, and maximum bit-rate considerations.
Careful PCB layout practice, with short trace lengths, should be followed to avoid
excessive capacitive loading. To accomplish this, PCB signal trace-lengths should
be kept short enough, such that the round trip delay of any reflection is less than
the one-shot duration. This improves signal integrity by ensuring that any
reflection sees a low impedance at the source driver. The one-shot circuits are
designed to stay on for 10 to 30 ns.
There is a tradeoff between achieving a maximum data rate and driving heavy
capacitive loads simultaneously. With heavy capacitive loads, the one-shot can
time-out before the signal is driven fully to the positive rail. In this scenario, only
the pull-up resistors will pull the line high by the RC time-constant of resistive
and capacitive loadings. It is best to avoid this condition by driving capacitive
loads less than 70pF when maximum data rate are desired.
If the application requires an external pull-up or pull-down resistor, special
consideration must be given to the resistor value. It is important to choose a
large enough resistor to ensure adequate VOH and VOL levels at the output port of
the translator. With regard to capacitive loads, the translators are designed to
drive up to 70 pF without issue.
PCB design guidelines for dual power supply voltage level shifter
The design of the PCB is an important factor in maximizing the performance of a
dual power supply voltage translator. Good PCB design should include:
• Effective power supply decoupling is provided by placing ceramic
capacitors next to the IC with minimum length connection traces
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APPLICATION NOTE
•
Short PCB traces and ground planes reduce RF susceptibility and radiated
emissions
Effective implementation of decoupling capacitors is critical to the noise
immunity of the level translator. Short current transients, caused by high speed
switching in CMOS circuits, cause problems such as glitches on the output voltage
signals.
Figure 9 provides an example of the recommended locations of the VL and VCC
decoupling capacitors. Ceramic capacitors with a magnitude of 0.01μF to 0.1μF
are a good choice because they are inexpensive, small and have excellent high
frequency attenuation specifications. Ground and power planes are one option
commonly used to provide short, low impedance trace connections.
Figure 9. Effective power supply decoupling is provided by locating the capacitors as close as possible to
the VL and VCC power pins while providing a low impedance ground connection
RF susceptibility and radiated emissions can be reduced by minimizing the loop
area formed by high speed data and ground lines. This can be done by shortening
the translator's I/O-to-connector trace lengths and utilizing a ground plane in the
PCB design.
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APPLICATION NOTE
Figure 10. Short PCB traces and ground planes decrease RF susceptibility and emissions.
Conclusion
Core logic supply voltages are being scaled down aggressively to achieve low
power dissipation, while legacy I/O interface components continue to require
higher voltages. Maintaining voltage compatibility and signal integrity requires
new low cost solutions. Union Semi’s UM330X and UM320X series voltage
translator offers system designers a compact and high signal integrity solution to
remedy mixed voltage system incompatibilities. These translators eliminate the
need for an extra direction control pin. This can simplify the software and
hardware design as well as reduce parts count.
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