Product Folder Sample & Buy Support & Community Tools & Software Technical Documents TXS0102 SCES640E – JANUARY 2007 – REVISED OCTOBER 2014 TXS0102 2-Bit Bidirectional Voltage-Level Translator for Open-Drain and Push-Pull Applications 1 Features 3 Description • • This two-bit non-inverting translator is a bidirectional voltage-level translator and can be used to establish digital switching compatibility between mixed-voltage systems. It uses two separate configurable powersupply rails, with the A ports supporting operating voltages from 1.65 V to 3.6 V while it tracks the VCCA supply, and the B ports supporting operating voltages from 2.3 V to 5.5 V while it tracks the VCCB supply. This allows the support of both lower and higher logic signal levels while providing bidirectional translation capabilities between any of the 1.8-V, 2.5-V, 3.3-V, and 5-V voltage nodes. 1 • • • • • • • No Direction-Control Signal Needed Max Data Rates – 24 Mbps (Push Pull) – 2 Mbps (Open Drain) Available in the Texas Instruments NanoStar™ Package 1.65 V to 3.6 V on A port and 2.3 V to 5.5 V on B port (VCCA ≤ VCCB) VCC Isolation Feature: If Either VCC Input Is at GND, Both Ports Are in the High-Impedance State No Power-Supply Sequencing Required: Either VCCA or VCCB Can Be Ramped First Ioff Supports Partial-Power-Down Mode Operation Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II ESD Protection Exceeds JESD 22 – A Port – 2500-V Human-Body Model (A114-B) – 250-V Machine Model (A115-A) – 1500-V Charged-Device Model (C101) – B Port – 8-kV Human-Body Model (A114-B) – 250-V Machine Model (A115-A) – 1500-V Charged-Device Model (C101) When the output-enable (OE) input is low, all I/Os are placed in the high-impedance state, which significantly reduces the power-supply quiescent current consumption. To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver. Device Information(1) PART NUMBER TXS0102 PACKAGE BODY SIZE (NOM) SSOP (8) 2.95 mm x 2.80 mm VSSOP (8) 2.30 mm x 2.00 mm X2SON (8) DSBGA (8) 2 Applications • • • I2C/SMBus UART GPIO 1.40 mm x 1.00 mm 1.80 mm x 1.20 mm 1.90 mm x 0.90 mm (1) For all available packages, see the orderable addendum at the end of the datasheet. Typical Application Block Diagram for TXS010X 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. TXS0102 SCES640E – JANUARY 2007 – REVISED OCTOBER 2014 www.ti.com Table of Contents 1 2 3 4 5 6 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 6.1 6.2 6.3 6.4 6.5 6.6 6.7 6.8 6.9 6.10 6.11 6.12 1 1 1 2 3 4 Absolute Maximum Ratings ..................................... 4 Handling Ratings....................................................... 4 Recommended Operating Conditions ...................... 5 Thermal Information .................................................. 5 Electrical Characteristics .......................................... 6 Timing Requirements (VCCA = 1.8 V ± 0.15 V) ......... 7 Timing Requirements (VCCA = 2.5 V ± 0.2 V) ........... 7 Timing Requirements (VCCA = 3.3 V ± 0.3 V) ........... 7 Switching Characteristics (VCCA = 1.8 V ± 0.15 V) ... 8 Switching Characteristics (VCCA = 2.5 V ± 0.2 V) ... 9 Switching Characteristics (VCCA = 3.3 V ± 0.3 V) . 10 Typical Characteristics .......................................... 11 7 8 Parameter Measurement Information ................ 12 Detailed Description ............................................ 13 8.1 8.2 8.3 8.4 9 Overview ................................................................. Functional Block Diagram ....................................... Feature Description................................................. Device Functional Modes........................................ 13 13 13 15 Application and Implementation ........................ 16 9.1 Application Information............................................ 16 9.2 Typical Application ................................................. 16 10 Power Supply Recommendations ..................... 18 11 Layout................................................................... 18 11.1 Layout Guidelines ................................................. 18 11.2 Layout Example .................................................... 18 12 Device and Documentation Support ................. 19 12.1 Trademarks ........................................................... 19 12.2 Electrostatic Discharge Caution ............................ 19 12.3 Glossary ................................................................ 19 13 Mechanical, Packaging, and Orderable Information ........................................................... 19 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision D (March 2011) to Revision E • Added Pin Configuration and Functions section, Handling Rating table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section ................................................................................................................................................................................... 1 Changes from Revision C (May 2009) to Revision D • 2 Page Page Added TOP-SIDE MARKING for SON - DQE and SON - DQM Packages in the ORDERING INFORMATION table. ........ 1 Submit Documentation Feedback Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: TXS0102 TXS0102 www.ti.com SCES640E – JANUARY 2007 – REVISED OCTOBER 2014 5 Pin Configuration and Functions DCT OR DCU PACKAGE (TOP VIEW) B2 1 8 B1 GND 2 7 VCCB VCCA 3 6 OE A2 4 5 A1 DQE OR DQM PACKAGE (TOP VIEW) VCCA A1 A2 GND 1 8 2 7 3 6 4 5 VCCB B1 B2 OE YZP PACKAGE (BOTTOM VIEW) A2 D1 4 5 D2 VCCA C1 3 6 C2 A1 OE GND B1 2 7 B2 VCCB B2 A1 1 8 A2 B1 Pin Functions NO. NAME TYPE FUNCTION DCT, DCU DQE, DQM YZP 1 6 A1 B2 I/O 2 4 B1 GND GND 3 1 C1 VCCA Power 4 3 D1 A2 I/O Input/output A. Referenced to VCCA. 5 2 D2 A1 I/O Input/output A. Referenced to VCCA. 6 5 C2 OE Input 7 8 B2 VCCB Power 8 7 A2 B1 I/O Input/output B. Referenced to VCCB. Ground A-port supply voltage. 1.65 V ≤ VCCA ≤ 3.6 V and VCCA ≤ VCCB Output enable (active High). Pull OE low to place all outputs in 3-state mode. Referenced to VCCA. B-port supply voltage. 2.3 V ≤ VCCB ≤ 5.5 V Input/output B. Referenced to VCCB. Submit Documentation Feedback Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: TXS0102 3 TXS0102 SCES640E – JANUARY 2007 – REVISED OCTOBER 2014 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings (1) over recommended operating free-air temperature range (unless otherwise noted) VCCA Supply voltage range VCCB Supply voltage range MIN MAX –0.5 4.6 V V –0.5 6.5 A port –0.5 4.6 B port –0.5 6.5 A port –0.5 4.6 B port –0.5 6.5 A port –0.5 VCCA + 0.5 B port –0.5 VCCB + 0.5 UNIT VI Input voltage range (2) VO Voltage range applied to any output in the high-impedance or power-off state (2) VO Voltage range applied to any output in the high or low state (2) (3) IIK Input clamp current VI < 0 –50 mA IOK Output clamp current VO < 0 –50 mA IO Continuous output current ±50 mA ±100 mA Continuous current through VCCA, VCCB, or GND (1) (2) (3) V V V Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The input and output negative-voltage ratings may be exceeded if the input and output current ratings are observed. The value of VCCA and VCCB are provided in the recommended operating conditions table. 6.2 Handling Ratings Tstg V(ESD) (1) (2) 4 MIN MAX UNIT –65 150 °C Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins, A Port (1) –2500 2500 Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins, B Port (1) –8 8 Charged device model (CDM), per JEDEC specification JESD22-C101, all pins (2) -1500 1500 250-V Machine Model (A115-A), all pins –250 250 Storage temperature range Electrostatic discharge kV V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Submit Documentation Feedback Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: TXS0102 TXS0102 www.ti.com SCES640E – JANUARY 2007 – REVISED OCTOBER 2014 6.3 Recommended Operating Conditions VCCI is the supply voltage associated with the input port. VCCO is the supply voltage associated with the output port. VCCA VCCA Supply voltage VCCB Supply voltage A-port I/Os High-level input voltage VIH VCCB (1) B-port I/Os OE input 1.65 V to 1.95 V 2.3 V to 5.5 V 2.3 V to 3.6 V 1.65 V to 3.6 V 2.3 V to 5.5 V MIN MAX 1.65 3.6 V 2.3 5.5 V VCCI – 0.2 VCCI VCCI – 0.4 VCCI VCCI – 0.4 VCCI VCCA × 0.65 5.5 0 0.15 A-port I/Os VIL (2) Low-level input voltage B-port I/Os 1.65 V to 3.6 V 2.3 V to 5.5 V OE input Δt/Δv TA (1) (2) A-port I/Os, push-pull driving Input transition B-port I/Os, push-pull driving rise or fall rate Control input 0 0.15 0 VCCA × 0.35 UNIT V V 10 1.65 V to 3.6 V 2.3 V to 5.5 V 10 ns/V 10 Operating free-air temperature –40 85 °C VCCA must be less than or equal to VCCB, and VCCA must not exceed 3.6 V. The maximum VIL value is provided to ensure that a valid VOL is maintained. The VOL value is VIL plus the voltage drop across the passgate transistor. 6.4 Thermal Information TXS0102 THERMAL METRIC (1) DCT DCU DQE DQM YZP 8 PINS 8 PINS 8 PINS 8 PINS 8 PINS RθJA Junction-to-ambient thermal resistance 182.6 199.1 199.3 239.3 105.8 RθJC(to Junction-to-case (top) thermal resistance 113.3 72.4 26.4 106.7 1.6 RθJB Junction-to-board thermal resistance 94.9 77.8 78.6 130.4 10.8 ψJT Junction-to-top characterization parameter 39.4 6.2 5.9 8.2 3.1 ψJB Junction-to-board characterization parameter 93.9 77.4 78.0 130.2 10.8 RθJC(b Junction-to-case (bottom) thermal resistance - - - - - UNIT p) °C/W ot) (1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: TXS0102 5 TXS0102 SCES640E – JANUARY 2007 – REVISED OCTOBER 2014 www.ti.com 6.5 Electrical Characteristics (1) (2) (3) over recommended operating free-air temperature range (unless otherwise noted) TEST CONDITIONS VCCA VCCB VOHA IOH = –20 μA, VIB ≥ VCCB – 0.4 V 1.65 V to 3.6 V 2.3 V to 5.5 V VOLA IOL = 1 mA, VIB ≤ 0.15 V 1.65 V to 3.6 V 2.3 V to 5.5 V VOHB IOH = –20 μA, VIA ≥ VCCA – 0.2 V 1.65 V to 3.6 V 2.3 V to 5.5 V VOLB IOL = 1 mA, VIA ≤ 0.15 V 1.65 V to 3.6 V 2.3 V to 5.5 V 1.65 V to 3.6 V 2.3 V to 5.5 V 0V 0 V to 5.5 V PARAMETER II Ioff IOZ OE A port VCCA × 0.67 UNIT V 0.4 VCCB × 0.67 V V 0.4 V ±1 ±2 μA ±1 ±2 μA 0V ±1 ±2 μA ±1 ±2 μA 1.65 V to VCCB 2.3 V to 5.5 V 2.4 3.6 V 0V 2.2 0V 5.5 V –1 1.65 V to VCCB 2.3 V to 5.5 V 12 3.6 V 0V –1 0V 5.5 V 1 1.65 V to VCCB 2.3 V to 5.5 V OE 3.3 V 3.3 V 2.5 A or B port 3.3 V 3.3 V 10 VI = VO = open, IO = 0 ICCA + ICCB VI = VCCI or GND, IO = 0 6 MIN MAX 2.3 V to 5.5 V VI = VO = open, IO = 0 (1) (2) (3) TYP MAX 0 to 3.6 V A or B port ICCB Cio MIN –40°C to 85°C 1.65 V to 3.6 V B port ICCA CI TA = 25°C A port 5 6 B port 6 7.5 μA μA 14.4 μA 3.5 pF pF VCCI is the VCC associated with the input port. VCCO is the VCC associated with the output port. VCCA must be less than or equal to VCCB, and VCCA must not exceed 3.6 V. Submit Documentation Feedback Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: TXS0102 TXS0102 www.ti.com SCES640E – JANUARY 2007 – REVISED OCTOBER 2014 6.6 Timing Requirements (VCCA = 1.8 V ± 0.15 V) over recommended operating free-air temperature range (unless otherwise noted) VCCB = 2.5 V ± 0.2 V MIN Data rate tw Pulse duration MAX Push-pull driving Open-drain driving Push-pull driving Open-drain driving Data inputs VCC = 3.3 V ± 0.3 V MIN VCC = 5 V ± 0.5 V MAX MIN UNIT MAX 21 22 24 2 2 2 47 45 41 500 500 500 Mbps ns 6.7 Timing Requirements (VCCA = 2.5 V ± 0.2 V) over recommended operating free-air temperature range (unless otherwise noted) VCCB = 2.5 V ± 0.2 V MIN Data rate tw Pulse duration Push-pull driving Open-drain driving Push-pull driving Open-drain driving Data inputs VCC = 3.3 V ± 0.3 V MAX MIN VCC = 5 V ± 0.5 V MAX MIN UNIT MAX 20 22 24 2 2 2 50 45 41 500 500 500 Mbps ns 6.8 Timing Requirements (VCCA = 3.3 V ± 0.3 V) over recommended operating free-air temperature range (unless otherwise noted) VCC = 3.3 V ± 0.3 V MIN Data rate tw Pulse duration Push-pull driving Open-drain driving Push-pull driving Open-drain driving Data inputs VCC = 5 V ± 0.5 V MAX MIN UNIT MAX 23 24 2 2 43 41 500 500 Mbps Submit Documentation Feedback Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: TXS0102 ns 7 TXS0102 SCES640E – JANUARY 2007 – REVISED OCTOBER 2014 www.ti.com 6.9 Switching Characteristics (VCCA = 1.8 V ± 0.15 V) over recommended operating free-air temperature range (unless otherwise noted) PARAMETER FROM (INPUT) TO (OUTPUT) VCCB = 2.5 V ± 0.2 V MIN Push-pull driving tPHL A B tPLH Open-drain driving A ten OE A or B tdis OE A or B tPLH Open-drain driving 45 trA A-port rise time trB B-port rise time tfA A-port fall time tfB B-port fall time tSK(O) Channel-to-channel skew Max data rate 8.8 260 1.9 5.3 175 MIN 9.6 36 208 4.4 27 36 140 1.2 198 4 0.5 27 200 50 40 200 ns 35 ns 3.2 9.5 2.3 9.3 2 7.6 Open-drain driving 38 165 30 132 22 95 Open-drain driving Push-pull driving 4 10.8 2.7 9.1 2.7 7.6 34 145 23 106 10 58 2 5.9 1.9 6 1.7 13.3 Open-drain driving 4.4 6.9 4.3 6.4 4.2 6.1 Push-pull driving 2.9 13.8 2.8 16.2 2.8 16.2 Open-drain driving 6.9 13.8 7.5 16.2 7 16.2 0.7 Push-pull driving Open-drain driving Submit Documentation Feedback 0.7 0.7 21 22 24 2 2 2 ns 102 Push-pull driving Push-pull driving ns 4.7 4.5 200 10 7.5 4.5 1.1 UNIT MAX 6.8 2.6 7.1 5.3 45 MAX VCCB = 5 V ± 0.5 V 5.4 2.4 4.4 Push-pull driving Open-drain driving MIN 6.8 Push-pull driving B MAX VCCB = 3.3 V ± 0.3 V 5.3 2.3 Push-pull driving Open-drain driving tPHL 8 TEST CONDITIONS ns ns ns ns Mbps Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: TXS0102 TXS0102 www.ti.com SCES640E – JANUARY 2007 – REVISED OCTOBER 2014 6.10 Switching Characteristics (VCCA = 2.5 V ± 0.2 V) over recommended operating free-air temperature range (unless otherwise noted) PARAMETER FROM (INPUT) TO (OUTPUT) TEST CONDITIONS VCCB = 2.5 V ± 0.2 V MIN Push-pull driving tPHL A B tPLH Open-drain driving B A ten OE A or B tdis OE A or B tPLH Open-drain driving 43 trA A-port rise time trB B-port rise time tfA A-port fall time tfB B-port fall time tSK(O) Channel-to-channel skew Max data rate 250 1.8 4.7 170 MIN 6 36 206 4.2 27 37 140 1.2 190 4 1 27 200 50 40 200 ns 35 ns 2.8 7.4 2.6 6.6 1.8 5.6 Open-drain driving 34 149 28 121 24 89 Push-pull driving 3.2 8.3 2.9 7.2 2.4 6.1 Open-drain driving 35 151 24 112 12 64 Push-pull driving 1.9 5.7 1.9 5.5 1.8 5.3 Open-drain driving 4.4 6.9 4.3 6.2 4.2 5.8 Push-pull driving 2.2 7.8 2.4 6.7 2.6 6.6 Open-drain driving 5.1 8.8 5.4 9.4 5.4 10.4 Push-pull driving Open-drain driving 0.7 0.7 20 22 24 2 2 2 Submit Documentation Feedback Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: TXS0102 ns 103 Push-pull driving 0.7 ns 4.3 1.6 200 5.8 4.4 3.6 2.6 UNIT MAX 3.8 2.1 4.1 2.5 44 MAX VCCB = 5 V ± 0.5 V 3.7 2 3 Push-pull driving Open-drain driving 6.3 3.5 Push-pull driving tPHL MIN 3.2 1.7 Push-pull driving Open-drain driving MAX VCCB = 3.3 V ± 0.3 V ns ns ns ns ns Mbps 9 TXS0102 SCES640E – JANUARY 2007 – REVISED OCTOBER 2014 www.ti.com 6.11 Switching Characteristics (VCCA = 3.3 V ± 0.3 V) over recommended operating free-air temperature range (unless otherwise noted) PARAMETER FROM (INPUT) TO (OUTPUT) VCCB = 3.3 V ± 0.3 V MIN Push-pull driving tPHL A B tPLH Open-drain driving A ten OE A or B tdis OE A or B tPLH Open-drain driving 36 trA A-port rise time trB B-port rise time tfA A-port fall time tfB B-port fall time tSK(O) Channel-to-channel skew Max data rate 4.2 204 1 124 139 4.6 4.4 28 1 165 97 2.6 3 200 40 200 ns 35 ns 2.3 5.6 1.9 4.8 Open-drain driving 25 116 19 85 Push-pull driving 2.5 6.4 2.1 7.4 Open-drain driving 26 116 14 72 2 5.4 1.9 5 Open-drain driving 4.3 6.1 4.2 5.7 Push-pull driving 2.3 7.4 2.4 7.6 5 7.6 4.8 8.3 Open-drain driving 0.7 Push-pull driving Open-drain driving Submit Documentation Feedback 0.7 23 24 2 2 ns 105 Push-pull driving Push-pull driving ns 3.3 2.5 3 UNIT MAX 3.1 1.4 2.5 Push-pull driving Open-drain driving MIN 4.2 Push-pull driving B MAX VCCB = 5 V ± 0.5 V 2.4 1.3 Push-pull driving Open-drain driving tPHL 10 TEST CONDITIONS ns ns ns ns ns Mbps Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: TXS0102 TXS0102 www.ti.com SCES640E – JANUARY 2007 – REVISED OCTOBER 2014 6.12 Typical Characteristics Figure 1. Low-Level Output Voltage (VOL(Bx)) vs Low-Level Current (IOL(Bx)) Figure 2. Low-Level Output Voltage (VOL(Bx)) vs Low-Level Current (IOL(Bx)) Figure 3. Low-Level Output Voltage (VOL(Bx)) vs Low-Level Current (IOL(Bx)) Submit Documentation Feedback Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: TXS0102 11 TXS0102 SCES640E – JANUARY 2007 – REVISED OCTOBER 2014 www.ti.com 7 Parameter Measurement Information VCCI VCCO VCCI VCCO DUT IN DUT IN OUT 15 pF OUT 1 MW 1 MW 15 pF DATA RATE, PULSE DURATION, PROPAGATION DELAY, OUTPUT RISE AND FALL TIME MEASUREMENT USING AN OPEN-DRAIN DRIVER DATA RATE, PULSE DURATION, PROPAGATION DELAY, OUTPUT RISE AND FALL TIME MEASUREMENT USING A PUSH-PULL DRIVER 2 × VCCO 50 kW From Output Under Test 15 pF S1 Open 50 kW LOAD CIRCUIT FOR ENABLE/DISABLE TIME MEASUREMENT TEST S1 tPZL/tPLZ tPHZ/tPZH 2 × VCCO Open tw VCCI VCCI/2 Input VCCI/2 0V VOLTAGE WAVEFORMS PULSE DURATION VCCA Output Control (low-level enabling) VCCA/2 0V tPLZ tPZL VCCI Input VCCI/2 VCCI/2 0V tPLH Output tPHL VCCO/2 0.9 y VCCO 0.1 y VCCO VOH VCCO/2 VOL VCCO Output Waveform 1 S1 at 2 × VCCO (see Note B) Output Waveform 2 S1 at GND (see Note B) VCCA/2 VCCO/2 0.1 y VCCO VOL tPHZ tPZH VOH 0.9 y VCCO VCCO/2 0V tf tr VOLTAGE WAVEFORMS PROPAGATION DELAY TIMES VOLTAGE WAVEFORMS ENABLE AND DISABLE TIMES A. CL includes probe and jig capacitance. B. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control. Waveform 2 is for an output with internal conditions such that the output is high, except when disabled by the output control. C. All input pulses are supplied by generators having the following characteristics: PRRv10 MHz, ZO = 50 Ω, dv/dt ≥ 1 V/ns. D. The outputs are measured one at a time, with one transition per measurement. E. tPLZ and tPHZ are the same as tdis. F. tPZL and tPZH are the same as ten. G. tPLH and tPHL are the same as tpd. H. VCCI is the VCC associated with the input port. I. VCCO is the VCC associated with the output port. J. All parameters and waveforms are not applicable to all devices. Figure 4. Load Circuit and Voltage Waveforms 12 Submit Documentation Feedback Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: TXS0102 TXS0102 www.ti.com SCES640E – JANUARY 2007 – REVISED OCTOBER 2014 8 Detailed Description 8.1 Overview The TXS0102 device is a directionless voltage-level translator specifically designed for translating logic voltage levels. The A port is able to accept I/O voltages ranging from 1.65 V to 3.6 V, while the B port can accept I/O voltages from 2.3 V to 5.5 V. The device is a pass-gate architecture with edge-rate accelerators (one-shots) to improve the overall data rate. 10-kΩ pullup resistors, commonly used in open-drain applications, have been conveniently integrated so that an external resistor is not needed. While this device is designed for open-drain applications, the device can also translate push-pull CMOS logic outputs. 8.2 Functional Block Diagram 8.3 Feature Description 8.3.1 Architecture The TXS0102 architecture (see Figure 5) is an auto-direction-sensing based translator that does not require a direction-control signal to control the direction of data flow from A to B or from B to A. Submit Documentation Feedback Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: TXS0102 13 TXS0102 SCES640E – JANUARY 2007 – REVISED OCTOBER 2014 www.ti.com Feature Description (continued) VCCA VCCB T1 One Oneshot shot One Oneshot shot T2 R1 10k R2 10k Gate Bias A B N2 Figure 5. Architecture of a TXS01xx Cell These two bidirectional channels independently determine the direction of data flow without a direction-control signal. Each I/O pin can be automatically reconfigured as either an input or an output, which is how this autodirection feature is realized. The TXS0102 is part of TI's "Switch" type voltage translator family and employs two key circuits to enable this voltage translation: 1) An N-channel pass-gate transistor topology that ties the A-port to the B-port and 2) Output one-shot (O.S.) edge-rate accelerator circuitry to detect and accelerate rising edges on the A or B ports For bidirectional voltage translation, pull-up resistors are included on the device for dc current sourcing capability. The VGATE gate bias of the N-channel pass transistor is set at approximately one threshold voltage (VT) above the VCC level of the low-voltage side. Data can flow in either direction without guidance from a control signal. The O.S. rising-edge rate accelerator circuitry speeds up the output slew rate by monitoring the input edge for transitions, helping maintain the data rate through the device. During a low-to-high signal rising edge, the O.S. circuits turn on the PMOS transistors (T1, T2) to increase the current drive capability of the driver for approximately 30 ns or 95% of the input edge, whichever occurs first. This edge-rate acceleration provides high ac drive by bypassing the internal 10-kΩ pull-up resistors during the low-to-high transition to speed up the signal. The output resistance of the driver is decreased to approximately 50 Ω to 70 Ω during this acceleration phase. To minimize dynamic ICC and the possibility of signal contention, the user should wait for the O.S. circuit to turn off before applying a signal in the opposite direction. The worst-case duration is equal to the minimum pulse-width number provided in the Timing Requirements section of this data sheet. 8.3.2 Input Driver Requirements The continuous dc-current "sinking" capability is determined by the external system-level open-drain (or pushpull) drivers that are interfaced to the TXS0102 I/O pins. Since the high bandwidth of these bidirectional I/O circuits is used to facilitate this fast change from an input to an output and an output to an input, they have a modest dc-current "sourcing" capability of hundreds of micro-Amps, as determined by the internal 10-kΩ pullup resistors. The fall time (tfA, tfB) of a signal depends on the edge-rate and output impedance of the external device driving TXS0102 data I/Os, as well as the capacitive loading on the data lines. Similarly, the tPHL and max data rates also depend on the output impedance of the external driver. The values for tfA, tfB, tPHL, and maximum data rates in the data sheet assume that the output impedance of the external driver is less than 50 Ω. 14 Submit Documentation Feedback Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: TXS0102 TXS0102 www.ti.com SCES640E – JANUARY 2007 – REVISED OCTOBER 2014 Feature Description (continued) 8.3.3 Output Load Considerations TI recommends careful PCB layout practices with short PCB trace lengths to avoid excessive capacitive loading and to ensure that proper O.S. triggering takes place. PCB signal trace-lengths should be kept short enough such that the round trip delay of any reflection is less than the one-shot duration. This improves signal integrity by ensuring that any reflection sees a low impedance at the driver. The O.S. circuits have been designed to stay on for approximately 30 ns. The maximum capacitance of the lumped load that can be driven also depends directly on the one-shot duration. With very heavy capacitive loads, the one-shot can time-out before the signal is driven fully to the positive rail. The O.S. duration has been set to best optimize trade-offs between dynamic ICC, load driving capability, and maximum bit-rate considerations. Both PCB trace length and connectors add to the capacitance that the TXS0102 output sees, so it is recommended that this lumped-load capacitance be considered to avoid O.S. retriggering, bus contention, output signal oscillations, or other adverse system-level affects. 8.3.4 Enable and Disable The TXS0102 has an OE input that is used to disable the device by setting OE low, which places all I/Os in the Hi-Z state. The disable time (tdis) indicates the delay between the time when OE goes low and when the outputs are disabled (Hi-Z). The enable time (ten) indicates the amount of time the user must allow for the one-shot circuitry to become operational after OE is taken high. 8.3.5 Pullup or Pulldown Resistors on I/O Lines Each A-port I/O has an internal 10-kΩ pullup resistor to VCCA, and each B-port I/O has an internal 10-kΩ pullup resistor to VCCB. If a smaller value of pullup resistor is required, an external resistor must be added from the I/O to VCCA or VCCB (in parallel with the internal 10-kΩ resistors). Adding lower value pull-up resistors will effect VOL levels, however. The internal pull-ups of the TXS0102 are disabled when the OE pin is low. 8.4 Device Functional Modes The TXS0102 device has two functional modes, enabled and disabled. To disable the device set the OE input low, which places all I/Os in a high impedance state. Setting the OE input high will enable the device. Submit Documentation Feedback Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: TXS0102 15 TXS0102 SCES640E – JANUARY 2007 – REVISED OCTOBER 2014 www.ti.com 9 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 9.1 Application Information The TXS0102 can be used to bridge the digital-switching compatibility gap between two voltage nodes to successfully interface logic threshold levels found in electronic systems. It should be used in a point-to-point topology for interfacing devices or systems operating at different interface voltages with one another. Its primary target application use is for interfacing with open-drain drivers on the data I/Os such as I2C or 1-wire, where the data is bidirectional and no control signal is available. The TXS0102 can also be used in applications where a push-pull driver is connected to the data I/Os, but the TXB0102 might be a better option for such push-pull applications. 9.2 Typical Application Figure 6. Typical Application Circuit 9.2.1 Design Requirements For this design example, use the parameters listed in Table 1. And make sure the VCCA ≤VCCB. Table 1. Design Parameters DESIGN PARAMETER EXAMPLE VALUE Input voltage range 1.65 to 3.6 V Output voltage range 2.3 to 5.5 V 9.2.2 Detailed Design Procedure To begin the design process, determine the following: • Input voltage range - Use the supply voltage of the device that is driving the TXS0102 device to determine the input voltage range. For a valid logic high the value must exceed the VIH of the input port. For a valid logic low the value must be less than the VIL of the input port. • Output voltage range - Use the supply voltage of the device that the TXS0102 device is driving to determine the output voltage range. 16 Submit Documentation Feedback Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: TXS0102 TXS0102 www.ti.com SCES640E – JANUARY 2007 – REVISED OCTOBER 2014 - The TXS0102 device has 10-kΩ internal pullup resistors. External pullup resistors can be added to reduce the total RC of a signal trace if necessary. • An external pull down resistor decreases the output VOH and VOL. Use Equation 1 to calculate the VOH as a result of an external pull down resistor. VOH = VCCx × RPD / (RPD + 10 kΩ) Where: • VCCx is the supply voltage on either VCCA or VCCB • RPD is the value of the external pull down resistor 9.2.3 Application Curves Figure 7. Level-Translation of a 2.5-MHz Signal Submit Documentation Feedback Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: TXS0102 17 TXS0102 SCES640E – JANUARY 2007 – REVISED OCTOBER 2014 www.ti.com 10 Power Supply Recommendations During operation, ensure that VCCA ≤ VCCBat all times. The sequencing of each power supply will not damage the device during the power up operation, so either power supply can be ramped up first. The output-enable (OE) input circuit is designed so that it is supplied by VCCA and when the (OE) input is low, all outputs are placed in the high-impedance state. To ensure the high-impedance state of the outputs during power up or power down, the OE input pin must be tied to GND through a pulldown resistor and must not be enabled until VCCA and VCCB are fully ramped and stable. The minimum value of the pulldown resistor to ground is determined by the currentsourcing capability of the driver. 11 Layout 11.1 Layout Guidelines To ensure reliability of the device, the following common printed-circuit board layout guidelines are recommended: • Bypass capacitors should be used on power supplies and should be placed as close as possible to the VCCA, VCCB pin, and GND pin. • Short trace lengths should be used to avoid excessive loading. • PCB signal trace-lengths must be kept short enough so that the round-trip delay of any reflection is less than the one-shot duration, approximately 30 ns, ensuring that any reflection encounters low impedance at the source driver. 11.2 Layout Example 18 Submit Documentation Feedback Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: TXS0102 TXS0102 www.ti.com SCES640E – JANUARY 2007 – REVISED OCTOBER 2014 12 Device and Documentation Support 12.1 Trademarks NanoStar is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 12.2 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 12.3 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 13 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Documentation Feedback Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: TXS0102 19 PACKAGE OPTION ADDENDUM www.ti.com 17-Aug-2015 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) TXS0102DCTR ACTIVE SM8 DCT 8 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 NFE Z TXS0102DCTRE4 ACTIVE SM8 DCT 8 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 NFE Z TXS0102DCTT ACTIVE SM8 DCT 8 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 NFE Z TXS0102DCTTE4 ACTIVE SM8 DCT 8 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 NFE Z TXS0102DCTTG4 ACTIVE SM8 DCT 8 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 NFE Z TXS0102DCUR ACTIVE VSSOP DCU 8 3000 Green (RoHS & no Sb/Br) CU NIPDAU | CU SN Level-1-260C-UNLIM -40 to 85 (FE ~ NFEQ ~ NFER) NZ TXS0102DCURG4 ACTIVE VSSOP DCU 8 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 NFER TXS0102DCUT ACTIVE VSSOP DCU 8 250 Green (RoHS & no Sb/Br) CU NIPDAU | CU SN Level-1-260C-UNLIM -40 to 85 (FE ~ NFEQ ~ NFER) NZ TXS0102DCUTG4 ACTIVE VSSOP DCU 8 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 NFER TXS0102DQER ACTIVE X2SON DQE 8 5000 Green (RoHS & no Sb/Br) CU NIPDAUAG Level-1-260C-UNLIM -40 to 85 2H TXS0102DQMR ACTIVE X2SON DQM 8 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 (2H ~ 2H7) TXS0102YZPR ACTIVE DSBGA YZP 8 3000 Green (RoHS & no Sb/Br) Call TI | SNAGCU Level-1-260C-UNLIM -40 to 85 (2H ~ 2H7 ~ 2HN) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 17-Aug-2015 Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. OTHER QUALIFIED VERSIONS OF TXS0102 : • Automotive: TXS0102-Q1 NOTE: Qualified Version Definitions: • Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 19-Aug-2015 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant TXS0102DCUR VSSOP DCU 8 3000 180.0 9.0 2.05 3.3 1.0 4.0 8.0 Q3 TXS0102DCUR VSSOP DCU 8 3000 180.0 8.4 2.25 3.35 1.05 4.0 8.0 Q3 TXS0102DCURG4 VSSOP DCU 8 3000 180.0 8.4 2.25 3.35 1.05 4.0 8.0 Q3 TXS0102DCUTG4 VSSOP DCU 8 250 180.0 8.4 2.25 3.35 1.05 4.0 8.0 Q3 TXS0102DQER X2SON DQE 8 5000 180.0 8.4 1.2 1.6 0.55 4.0 8.0 Q1 TXS0102DQMR X2SON DQM 8 3000 180.0 9.5 1.4 2.0 0.5 4.0 8.0 Q1 TXS0102DQMR X2SON DQM 8 3000 180.0 8.4 1.57 2.21 0.59 4.0 8.0 Q1 TXS0102YZPR DSBGA YZP 8 3000 178.0 9.2 1.02 2.02 0.63 4.0 8.0 Q1 TXS0102YZPR DSBGA YZP 8 3000 180.0 8.4 1.02 2.02 0.63 4.0 8.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 19-Aug-2015 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TXS0102DCUR VSSOP DCU 8 3000 182.0 182.0 20.0 TXS0102DCUR VSSOP DCU 8 3000 202.0 201.0 28.0 TXS0102DCURG4 VSSOP DCU 8 3000 202.0 201.0 28.0 TXS0102DCUTG4 VSSOP DCU 8 250 202.0 201.0 28.0 TXS0102DQER X2SON DQE 8 5000 202.0 201.0 28.0 TXS0102DQMR X2SON DQM 8 3000 184.0 184.0 19.0 TXS0102DQMR X2SON DQM 8 3000 202.0 201.0 28.0 TXS0102YZPR DSBGA YZP 8 3000 220.0 220.0 35.0 TXS0102YZPR DSBGA YZP 8 3000 182.0 182.0 20.0 Pack Materials-Page 2 MECHANICAL DATA MPDS049B – MAY 1999 – REVISED OCTOBER 2002 DCT (R-PDSO-G8) PLASTIC SMALL-OUTLINE PACKAGE 0,30 0,15 0,65 8 0,13 M 5 0,15 NOM ÇÇÇÇÇ ÇÇÇÇÇ ÇÇÇÇÇ ÇÇÇÇÇ 2,90 2,70 4,25 3,75 Gage Plane PIN 1 INDEX AREA 1 0,25 4 0° – 8° 3,15 2,75 0,60 0,20 1,30 MAX Seating Plane 0,10 0,10 0,00 NOTES: A. B. C. D. 4188781/C 09/02 All linear dimensions are in millimeters. This drawing is subject to change without notice. Body dimensions do not include mold flash or protrusion Falls within JEDEC MO-187 variation DA. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 D: Max = 1.918 mm, Min =1.858 mm E: Max = 0.918 mm, Min =0.858 mm IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment. 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