W972GG8KB
32M 8 BANKS 8 BIT DDR2 SDRAM
Table of Contents1.
GENERAL DESCRIPTION ................................................................................................................... 4
2.
FEATURES ........................................................................................................................................... 4
3.
ORDER INFORMATION ....................................................................................................................... 4
4.
KEY PARAMETERS ............................................................................................................................. 5
5.
BALL CONFIGURATION ...................................................................................................................... 6
6.
BALL DESCRIPTION ............................................................................................................................ 7
7.
BLOCK DIAGRAM ................................................................................................................................ 8
8.
8.1
8.2
8.3
8.4
FUNCTIONAL DESCRIPTION .............................................................................................................. 9
Power-up and Initialization Sequence ................................................................................................... 9
Mode Register and Extended Mode Registers Operation ................................................................... 10
8.2.1
Mode Register Set Command (MRS)............................................................................... 10
8.2.2
Extend Mode Register Set Commands (EMRS) .............................................................. 11
8.2.2.1
Extend Mode Register Set Command (1), EMR (1) ................................................ 11
8.2.2.2
DLL Enable/Disable ................................................................................................ 12
8.2.2.3
Extend Mode Register Set Command (2), EMR (2) ................................................ 13
8.2.2.4
Extend Mode Register Set Command (3), EMR (3)................................................ 14
8.2.3
Off-Chip Driver (OCD) Impedance Adjustment ................................................................ 15
8.2.3.1
Extended Mode Register for OCD Impedance Adjustment .................................... 16
8.2.3.2
OCD Impedance Adjust .......................................................................................... 16
8.2.3.3
Drive Mode ............................................................................................................. 17
8.2.4
On-Die Termination (ODT) ............................................................................................... 18
8.2.5
ODT related timings ......................................................................................................... 18
8.2.5.1
MRS command to ODT update delay ..................................................................... 18
Command Function ............................................................................................................................. 20
8.3.1
Bank Activate Command .................................................................................................. 20
8.3.2
Read Command ............................................................................................................... 21
8.3.3
Write Command ............................................................................................................... 21
8.3.4
Burst Read with Auto-precharge Command ..................................................................... 21
8.3.5
Burst Write with Auto-precharge Command ..................................................................... 21
8.3.6
Precharge All Command .................................................................................................. 21
8.3.7
Self Refresh Entry Command .......................................................................................... 21
8.3.8
Self Refresh Exit Command ............................................................................................. 22
8.3.9
Refresh Command ........................................................................................................... 22
8.3.10
No-Operation Command .................................................................................................. 23
8.3.11
Device Deselect Command .............................................................................................. 23
Read and Write access modes ........................................................................................................... 23
8.4.1
8.4.1.1
8.5
8.6
Posted CAS ................................................................................................................... 23
Examples of posted CAS operation ..................................................................... 23
8.4.2
Burst mode operation ....................................................................................................... 24
8.4.3
Burst read mode operation ............................................................................................... 25
8.4.4
Burst write mode operation .............................................................................................. 25
8.4.5
Write data mask ............................................................................................................... 26
Burst Interrupt ..................................................................................................................................... 26
Precharge operation ............................................................................................................................ 27
Publication Release Date: May 08, 2015
Revision: A02
-1-
W972GG8KB
8.6.1
Burst read operation followed by precharge ..................................................................... 27
8.6.2
Burst write operation followed by precharge .................................................................... 27
8.7
Auto-precharge operation ................................................................................................................... 27
8.7.1
Burst read with Auto-precharge........................................................................................ 28
8.7.2
Burst write with Auto-precharge ....................................................................................... 28
8.8
Refresh Operation ............................................................................................................................... 29
8.9
Power Down Mode .............................................................................................................................. 29
8.9.1
Power Down Entry ........................................................................................................... 30
8.9.2
Power Down Exit .............................................................................................................. 30
8.10
Input clock frequency change during precharge power down ............................................................. 30
9.
9.1
9.2
9.3
9.4
9.5
10.
OPERATION MODE ........................................................................................................................... 31
Command Truth Table ........................................................................................................................ 31
Clock Enable (CKE) Truth Table for Synchronous Transitions............................................................ 32
Data Mask (DM) Truth Table ............................................................................................................... 32
Function Truth Table ........................................................................................................................... 33
Simplified Stated Diagram ................................................................................................................... 36
ELECTRICAL CHARACTERISTICS ................................................................................................... 37
10.1
Absolute Maximum Ratings ................................................................................................................ 37
10.2
Operating Temperature Condition ....................................................................................................... 37
10.3
Recommended DC Operating Conditions ........................................................................................... 37
10.4
ODT DC Electrical Characteristics ...................................................................................................... 38
10.5
Input DC Logic Level ........................................................................................................................... 38
10.6
Input AC Logic Level ........................................................................................................................... 38
10.7
Capacitance ........................................................................................................................................ 39
10.8
Leakage and Output Buffer Characteristics ........................................................................................ 39
10.9
DC Characteristics .............................................................................................................................. 40
10.10
IDD Measurement Test Parameters .......................................................................................... 42
10.11
AC Characteristics ..................................................................................................................... 43
10.11.1
AC Characteristics and Operating Condition for -18 speed grade ................................... 43
10.11.2
AC Characteristics and Operating Condition for -25/25I/-3 speed grades........................ 45
10.12
AC Input Test Conditions ........................................................................................................... 66
10.13
Differential Input/Output AC Logic Levels .................................................................................. 66
10.14
AC Overshoot / Undershoot Specification ................................................................................. 67
10.14.1
AC Overshoot / Undershoot Specification for Address and Control Pins: ........................ 67
10.14.2
AC Overshoot / Undershoot Specification for Clock, Data, Strobe and Mask pins: .......... 67
11.
11.1
11.2
11.3
11.4
11.5
11.6
11.7
11.8
11.9
11.10
11.11
11.12
11.13
11.14
TIMING WAVEFORMS ....................................................................................................................... 68
Command Input Timing ....................................................................................................................... 68
ODT Timing for Active/Standby Mode ................................................................................................. 69
ODT Timing for Power Down Mode .................................................................................................... 69
ODT Timing mode switch at entering power down mode .................................................................... 70
ODT Timing mode switch at exiting power down mode ...................................................................... 71
Data output (read) timing .................................................................................................................... 72
Burst read operation: RL=5 (AL=2, CL=3, BL=4) ................................................................................ 72
Data input (write) timing ...................................................................................................................... 73
Burst write operation: RL=5 (AL=2, CL=3, WL=4, BL=4) .................................................................... 73
Seamless burst read operation: RL = 5 ( AL = 2, and CL = 3, BL = 4) ...................................... 74
Seamless burst write operation: RL = 5 ( WL = 4, BL = 4) ......................................................... 74
Burst read interrupt timing: RL =3 (CL=3, AL=0, BL=8) ............................................................. 75
Burst write interrupt timing: RL=3 (CL=3, AL=0, WL=2, BL=8) .................................................. 75
Write operation with Data Mask: WL=3, AL=0, BL=4) ............................................................... 76
Publication Release Date: May 08, 2015
Revision: A02
-2-
W972GG8KB
11.15
Burst read operation followed by precharge: RL=4 (AL=1, CL=3, BL=4, tRTP ≤ 2clks) ............ 77
11.16
Burst read operation followed by precharge: RL=4 (AL=1, CL=3, BL=8, tRTP ≤ 2clks) ............ 77
11.17
Burst read operation followed by precharge: RL=5 (AL=2, CL=3, BL=4, tRTP ≤ 2clks) ............ 78
11.18
Burst read operation followed by precharge: RL=6 (AL=2, CL=4, BL=4, tRTP ≤ 2clks) ............ 78
11.19
Burst read operation followed by precharge: RL=4 (AL=0, CL=4, BL=8, tRTP > 2clks) ............ 79
11.20
Burst write operation followed by precharge: WL = (RL-1) = 3 .................................................. 79
11.21
Burst write operation followed by precharge: WL = (RL-1) = 4 .................................................. 80
11.22
Burst read operation with Auto-precharge: RL=4 (AL=1, CL=3, BL=8, tRTP ≤ 2clks) ............... 80
11.23
Burst read operation with Auto-precharge: RL=4 (AL=1, CL=3, BL=4, tRTP > 2clks) ............... 81
11.24
Burst read with Auto-precharge followed by an activation to the same bank (tRC Limit): RL=5
(AL=2, CL=3, internal tRCD=3, BL=4, tRTP ≤ 2clks) ....................................................................................... 81
11.25
Burst read with Auto-precharge followed by an activation to the same bank (tRP Limit): RL=5
(AL=2, CL=3, internal tRCD=3, BL=4, tRTP ≤ 2clks) ....................................................................................... 82
11.26
Burst write with Auto-precharge (tRC Limit): WL=2, WR=2, BL=4, tRP=3 ................................. 82
11.27
Burst write with Auto-precharge (WR + tRP Limit): WL=4, WR=2, BL=4, tRP=3 ....................... 83
11.28
Self Refresh Timing ................................................................................................................... 83
11.29
Basic Power Down Entry and Exit Timing.................................................................................. 84
11.30
Precharged Power Down Entry and Exit Timing ........................................................................ 84
11.31
Clock frequency change in precharge Power Down mode ........................................................ 85
12.
PACKAGE SPECIFICATION .............................................................................................................. 86
13.
REVISION HISTORY .......................................................................................................................... 87
Publication Release Date: May 08, 2015
Revision: A02
-3-
W972GG8KB
1. GENERAL DESCRIPTION
The W972GG8KB is a 2G bits DDR2 SDRAM, organized as 33,554,432 words 8 banks 8 bits. This
device achieves high speed transfer rates up to 1066Mb/sec/pin (DDR2-1066) for general
applications. W972GG8KB is sorted into the following speed grades: -18, -25, 25I and -3. The -18 is
compliant to the DDR2-1066 (7-7-7) specification. The -25/25I are compliant to the DDR2-800 (5-5-5)
or DDR2-800 (6-6-6) specification (the 25I industrial grade which is guaranteed to support -40°C ≤
TCASE ≤ 95°C). The -3 is compliant to the DDR2-667 (5-5-5) specification.
All of the control and address inputs are synchronized with a pair of externally supplied differential
clocks. Inputs are latched at the cross point of differential clocks (CLK rising and CLK falling). All
I/Os are synchronized with a single ended DQS or differential DQS- DQS pair in a source
synchronous fashion.
2. FEATURES
Power Supply: VDD, VDDQ = 1.8 V ± 0.1 V
Double Data Rate architecture: two data transfers per clock cycle
CAS Latency: 3, 4, 5, 6 and 7
Burst Length: 4 and 8
Bi-directional, differential data strobes (DQS and DQS ) are transmitted / received with data
Edge-aligned with Read data and center-aligned with Write data
DLL aligns DQ and DQS transitions with clock
Differential clock inputs (CLK and CLK )
Data masks (DM) for write data.
Commands entered on each positive CLK edge, data and data mask are referenced to both edges
of DQS
Posted CAS programmable additive latency supported to make command and data bus efficiency
Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better signal
quality
Auto-precharge operation for read and write bursts
Auto Refresh and Self Refresh modes
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = Read Latency - 1 (WL = RL - 1)
Interface: SSTL_18
Packaged in WBGA 60 Ball (8x12.5 mm2), using Lead free materials with RoHS compliant
3. ORDER INFORMATION
PART NUMBER
SPEED GRADE
OPERATING TEMPERATURE
W972GG8KB-18
DDR2-1066 (7-7-7)
0°C ≤ TCASE ≤ 85°C
W972GG8KB-25
DDR2-800 (5-5-5) or DDR2-800 (6-6-6)
0°C ≤ TCASE ≤ 85°C
W972GG8KB25I
DDR2-800 (5-5-5) or DDR2-800 (6-6-6)
-40°C ≤ TCASE ≤ 95°C
W972GG8KB-3
DDR2-667 (5-5-5)
0°C ≤ TCASE ≤ 85°C
Publication Release Date: May 08, 2015
Revision: A02
-4-
W972GG8KB
4. KEY PARAMETERS
SYM.
SPEED GRADE
DDR2-1066
DDR2-800
DDR2-667
Bin(CL-tRCD-tRP)
7-7-7
5-5-5/6-6-6
5-5-5
Part Number Extension
-18
-25/25I
-3
@CL = 7
@CL = 6
tCK(avg)
Average clock period
@CL = 5
@CL = 4
@CL = 3
tRCD
Active to Read/Write Command Delay Time
Min.
1.875 nS
Max.
7.5 nS
Min.
2.5 nS
2.5 nS
Max.
7.5 nS
8 nS
Min.
3 nS
2.5 nS
3 nS
Max.
7.5 nS
8 nS
8 nS
Min.
3.75 nS
3.75 nS
3.75 nS
Max.
7.5 nS
8 nS
8 nS
Min.
5 nS
5 nS
Max.
8 nS
8 nS
Min.
13.125 nS
12.5 nS
15 nS
*2
-40°C ≤ TCASE ≤ 85°C
tREFI
Average periodic
refresh Interval
0°C ≤ TCASE ≤ 85°C
Max.
85°C < TCASE ≤ 95°C
7.8
μS*2, 3
*2
7.8 μS*1
7.8 μS*1
7.8 μS*1
3.9 μS*4
3.9 μS*4
3.9 μS*4
tRP
Precharge to Active Command Period
Min.
13.125 nS
12.5 nS
15 nS
tRC
Active to Ref/Active Command Period
Min.
58.125 nS
57.5 nS
60 nS
tRAS
Active to Precharge Command Period
Min.
45 nS
45 nS
45 nS
IDD0
Operating one bank active-precharge current
Max.
75 mA
70 mA
67 mA
IDD1
Operating one bank active-read-precharge current
Max.
80 mA
75 mA
72 mA
IDD4R
Operating burst read current
Max.
150 mA
125 mA
110 mA
IDD4W
Operating burst write current
Max.
140 mA
135 mA
120 mA
IDD5B
Burst refresh current
Max.
160 mA
145 mA
135 mA
IDD6
Self refresh current (TCASE ≤ 85°C)
Max.
10 mA
10 mA
10 mA
IDD7
Operating bank interleave read current
Max.
190 mA
170 mA
150 mA
Notes:
1. All speed grades support 0°C ≤ TCASE ≤ 85°C with full JEDEC AC and DC specifications.
2. For -18, -25 and -3 speed grades, -40°C ≤ TCASE < 0°C is not available.
3. 25I speed grades support -40°C ≤ TCASE ≤ 85°C with full JEDEC AC and DC specifications.
4. For all speed grade parts, TCASE is able to extend to 95°C with doubling Auto Refresh commands in frequency to a 32 mS
period ( tREFI = 3.9 µS) and to enter to Self Refresh mode at this high temperature range via A7 “1” on EMR (2).
Publication Release Date: May 08, 2015
Revision: A02
-5-
W972GG8KB
5. BALL CONFIGURATION
1
2
3
VDD
NU/RDQS
VSS
DQ6
VSSQ DM/RDQS
4
5
6
7
8
9
A
VSSQ
DQS
VDDQ
B
DQS
VSSQ
DQ7
VDDQ
DQ1
VDDQ
C
VDDQ
DQ0
VDDQ
DQ4
VSSQ
DQ3
D
DQ2
VSSQ
DQ5
VDDL
VREF
VSS
E
VSSDL
CLK
VDD
CKE
WE
F
RAS
CLK
ODT
BA0
BA1
G
CAS
CS
A10/AP
A1
H
A2
A0
A3
A5
J
A6
A4
A7
A9
K
A11
A8
A12
A14
L
NC
A13
BA2
VSS
VDD
VDD
VSS
Publication Release Date: May 08, 2015
Revision: A02
-6-
W972GG8KB
6. BALL DESCRIPTION
BALL NUMBER
SYMBOL
FUNCTION
DESCRIPTION
H8,H3,H7,J2,J8,J3,
J7,K2,K8,K3,H2,K7,
L2,L8,L3
A0−A14
Address
Provide the row address for active commands, and the column
address and Auto-precharge bit for Read/Write commands to select
one location out of the memory array in the respective bank.
Row address: A0−A14.
Column address: A0−A9. (A10 is used for Auto-precharge)
G2,G3,G1
BA0−BA2
Bank Select
BA0−BA2 define to which bank an ACTIVE, READ, WRITE or
PRECHARGE command is being applied.
C8,C2,D7,D3,D1,D9,
B1,B9
DQ0−DQ7
Data Input
/ Output
F9
ODT
On Die Termination
Control
B7,A8
DQS, DQS
Data Strobe /
Differential Read
Data Strobe
G8
CS
Chip Select
Bi-directional data bus.
ODT (registered HIGH) enables termination resistance internal to the
DDR2 SDRAM.
Output with read data, input with write data for source synchronous
operation. Edge-aligned with read data, center-aligned with write
data. DQS is only used when differential data strobe mode is
enabled via the control bit at EMR (1) [A10] = 0.
All commands are masked when CS is registered HIGH. CS
provides for external rank selection on systems with multiple ranks.
CS is considered part of the command code.
F7,G7,F3
RAS , CAS ,
Command Inputs
WE
B3
DM/RDQS
Input Data Mask/
Read Data Strobe
RAS , CAS and WE (along with CS ) define the command being
entered.
DM is an input mask signal for write data. Input data is masked when
DM is sampled HIGH coincident with that input data during a Write
access. DM is sampled on both edges of DQS. The DM loading
matches the DQ and DQS loading. RDQS/ RDQS are used as
strobe signals during reads is enabled by EMR (1) [A11] = 1. If
RDQS/ RDQS is enabled, the DM function is disabled.
A2
E8,F8
NU/ RDQS
Not Use/Differential
Read Data Strobe
CLK, CLK
Differential Clock
Inputs
RDQS is only used when RDQS is enabled and differential data
strobe mode is enabled. If differential data strobe mode is disabled
via the control bit at EMR (1) [A10] = 1, then ball A2 and A8 are not
used.
CLK and CLK are differential clock inputs. All address and control
input signals are sampled on the crossing of the positive edge of CLK
and negative edge of CLK . Output (read) data is referenced to the
crossings of CLK and CLK (both directions of crossing).
F2
CKE
Clock Enable
E2
VREF
Reference Voltage
A1,E9,H9,L1
VDD
Power Supply
A3,E3,J1,K9
VSS
Ground
A9,C1,C3,C7,C9
VDDQ
DQ Power Supply
A7,B2,B8,D2,D8
VSSQ
DQ Ground
L7
NC
No Connection
E1
VDDL
DLL Power Supply
E7
VSSDL
DLL Ground
CKE (registered HIGH) activates and CKE (registered LOW)
deactivates clocking circuitry on the DDR2 SDRAM.
VREF is reference voltage for inputs.
Power Supply: 1.8V ± 0.1V.
Ground.
DQ Power Supply: 1.8V ± 0.1V.
DQ Ground. Isolated on the device for improved noise immunity.
No connection.
DLL Power Supply: 1.8V ± 0.1V.
DLL Ground.
Publication Release Date: May 08, 2015
Revision: A02
-7-
-8-
BA2
BA1
BA0
A9
A11
A12
A13
A14
A0
A10
WE
CAS
RAS
CS
SIGNAL
COLUMN
COUNTER
REFRESH
REGISTER
MODE
GENERATOR
COUNTER
BUFFER
ADDRESS
DECODER
COMMAND
CONTROL
ROW DECODER
ROW DECODER
CKE
SENSE
AMPLIFIER
CELL ARRAY
BANK #2
COLUMN
DECODER
SENSE
AMPLIFIER
CELL ARRAY
BANK #0
COLUMN
DECODER
ROW DECODER
SENSE
AMPLIFIER
CELL ARRAY
BANK #3
COLUMN
DECODER
SENSE
AMPLIFIER
CELL ARRAY
BANK #1
COLUMN
DECODER
SENSE
AMPLIFIER
CELL ARRAY
BANK #6
COLUMN
DECODER
CIRCUIT
DATA CONTROL
PREFETCH REGISTER
SENSE
AMPLIFIER
CELL ARRAY
BANK #4
COLUMN
DECODER
NOTE: The cell array configuration is 32768 * 1024 * 8
ROW DECODER
DLL
CLOCK
BUFFER
ROW DECODER
ROW DECODER
CLK
ROW DECODER
ROW DECODER
CLK
SENSE
AMPLIFIER
CELL ARRAY
BANK #7
COLUMN
DECODER
DQ
BUFFER
SENSE
AMPLIFIER
CELL ARRAY
BANK #5
COLUMN
DECODER
CONTROL
ODT
DM
RDQS
RDQS
DQS
DQS
DQ0
|
DQ7
ODT
W972GG8KB
7. BLOCK DIAGRAM
Publication Release Date: May 08, 2015
Revision: A02
W972GG8KB
8. FUNCTIONAL DESCRIPTION
8.1 Power-up and Initialization Sequence
DDR2 SDRAMs must be powered up and initialized in a predefined manner. Operational procedures
other than those specified may result in undefined operation. The following sequence is required for
Power-up and Initialization.
1. Apply power and attempt to maintain CKE below 0.2 × VDDQ and ODT*1 at a LOW state (all other
inputs may be undefined.) Either one of the following sequence is required for Power-up.
A. The VDD voltage ramp time must be no greater than 200 mS from when VDD ramps from 300
mV to VDD min; and during the VDD voltage ramp, |VDD -VDDQ| ≤ 0.3 volts.
VDD, VDDL and VDDQ are driven from a single power converter output
VTT is limited to 0.95V max
VREF*2 tracks VDDQ/2
VDDQ ≥ VREF must be met at all times
B. Voltage levels at I/Os and outputs must be less than VDDQ during voltage ramp time to avoid
DRAM latch-up. During the ramping of the supply voltages, VDD ≥ VDDL ≥ VDDQ must be
maintained and is applicable to both AC and DC levels until the ramping of the supply voltages
is complete.
Apply VDD/VDDL*3 before or at the same time as VDDQ
Apply VDDQ*4 before or at the same time as VTT
VREF*2 tracks VDDQ/2
VDDQ ≥ VREF must be met at all times.
Apply VTT
The VTT voltage ramp time from when VDDQ min is achieved on VDDQ to when VTT min is
achieved on VTT must be no greater than 500 mS
2. Start Clock and maintain stable condition for 200 µS (min.).
3. After stable power and clock (CLK, CLK ), apply NOP or Deselect and take CKE HIGH.
4. Wait minimum of 400 nS then issue precharge all command. NOP or Deselect applied during 400
nS period.
5. Issue an EMRS command to EMR (2). (To issue EMRS command to EMR (2), provide LOW to
BA0 and BA2, HIGH to BA1.)
6. Issue an EMRS command to EMR (3). (To issue EMRS command to EMR (3), provide LOW to
BA2, HIGH to BA0 and BA1.)
7. Issue EMRS to enable DLL. (To issue DLL Enable command, provide LOW to A0, HIGH to BA0
and LOW to BA1-BA2 and A13-A14. And A9=A8=A7=LOW must be used when issuing this
command.)
8. Issue a Mode Register Set command for DLL reset. (To issue DLL Reset command, provide HIGH
to A8 and LOW to BA0-BA2 and A13-A14.)
9. Issue a precharge all command.
10. Issue 2 or more Auto Refresh commands.
11. Issue a MRS command with LOW to A8 to initialize device operation. (i.e. to program operating
parameters without resetting the DLL.)
12. At least 200 clocks after step 8, execute OCD Calibration (Off Chip Driver impedance adjustment).
If OCD calibration is not used, EMRS to EMR (1) to set OCD Calibration Default
(A9=A8=A7=HIGH) followed by EMRS to EMR (1) to exit OCD Calibration Mode
(A9=A8=A7=LOW) must be issued with other operating parameters of EMR(1).
13. The DDR2 SDRAM is now ready for normal operation.
Publication Release Date: May 08, 2015
Revision: A02
-9-
W972GG8KB
Notes:
1. To guarantee ODT off, VREF must be valid and a LOW level must be applied to the ODT pin.
2. VREF must be within ± 300 mV with respect to VDDQ/2 during supply ramp time.
3. VDD/VDDL voltage ramp time must be no greater than 200 mS from when VDD ramps from 300 mV to VDD min.
4. The VDDQ voltage ramp time from when VDD min is achieved on VDD to when VDDQ min is achieved on VDDQ must be
no greater than 500 mS.
tCH tCL
CLK
CLK
tIS
tIS
CKE
ODT
Command
PRE
ALL
NOP
400nS
EMRS
tRP
PRE
ALL
MRS
tMRD
tMRD
REF
REF
tRP
tRFC
MRS
tRFC
tMRD
ANY
CMD
EMRS
EMRS
Follow OCD
tOIT
Flow chart
DLL
Enable
DLL
Reset
min 200 Cycle
OCD
Default
OCD
CAL. Mode
Exit
Figure 1 – Initialization sequence after power-up
8.2
Mode Register and Extended Mode Registers Operation
For application flexibility, burst length, burst type, CAS Latency, DLL reset function, write recovery
time (WR) are user defined variables and must be programmed with a Mode Register Set (MRS)
command. Additionally, DLL disable function, driver impedance, additive CAS Latency, ODT (On Die
Termination), single-ended strobe and OCD (off chip driver impedance adjustment) are also user
defined variables and must be programmed with an Extended Mode Register Set (EMRS) command.
Contents of the Mode Register (MR) or Extended Mode Registers EMR (1), EMR (2) and EMR (3) can
be altered by re-executing the MRS or EMRS Commands. Even if the user chooses to modify only a
subset of the MR or EMR (1), EMR (2) and EMR (3) variables, all variables within the addressed
register must be redefined when the MRS or EMRS commands are issued.
MRS, EMRS and Reset DLL do not affect array contents, which mean re-initialization including those
can be executed at any time after power-up without affecting array contents.
8.2.1
Mode Register Set Command (MRS)
( CS = "L", RAS = "L", CAS = "L", WE = "L", BA0 = "L", BA1 = "L", BA2 = "L", A0 to A14 =
Register Data)
The mode register stores the data for controlling the various operating modes of DDR2 SDRAM. It
programs CAS Latency, burst length, burst sequence, test mode, DLL reset, Write Recovery (WR) and
various vendor specific options to make DDR2 SDRAM useful for various applications. The default
value in the Mode Register after power-up is not defined, therefore the Mode Register must be
programmed during initialization for proper operation.
The DDR2 SDRAM should be in all bank precharge state with CKE already HIGH prior to writing into
the mode register. The mode register set command cycle time (tMRD) is required to complete the write
operation to the mode register. The mode register contents can be changed using the same command
and clock cycle requirements during normal operation as long as all banks are in the precharge state.
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The mode register is divided into various fields depending on functionality. Burst length is defined by
A[2:0] with options of 4 and 8 bit burst lengths. The burst length decodes are compatible with DDR
SDRAM. Burst address sequence type is defined by A3, CAS Latency is defined by A[6:4]. The DDR2
does not support half clock latency mode. A7 is used for test mode. A8 is used for DLL reset. A7 must
be set to LOW for normal MRS operation. Write recovery time WR is defined by A[11:9]. Refer to the
table for specific codes.
BA2
BA1
BA0
A14
A13
A12
0
0
0
0
0
PD
A8
0
DLL Reset
No
1
Yes
A11
A10
A9
WR
A8
A7
DLL
TM
A7
A6
A5
A4
A3
CAS Latency
A2
BT
Mode
A1
A0
Burst Length
A3
Burst Type
Sequential
0
Normal
0
1
Test
1
Address Field
Mode Register
Burst Length
Interleave
A2
A1
A0
BL
0
1
0
4
0
1
1
8
BA1
BA0
MRS mode
0
0
MR
0
1
EMR (1)
A11
A10
A9
WR *
A6
A5
A4
Latency
1
0
EMR (2)
0
0
0
Reserved
0
0
0
Reserved
1
1
EMR (3)
0
0
1
2
0
0
1
Reserved
0
1
0
3
0
1
0
Reserved
0
1
1
3
1
0
0
4
1
0
1
5
1
1
0
6
1
1
1
7
Write recovery for Auto-precharge
0
Fast exit (use tXARD)
1
0
0
5
1
Slow exit (use tXARDS)
1
0
1
6
1
1
0
7
1
1
1
8
DDR2-1066
4
DDR2-667
1
DDR2-800
1
DDR2-1066
0
DDR2-667
Active power down exit time
DDR2-800
A12
CAS Latency
Note:
1. WR (write recovery for Auto-precharge) min is determined by tCK(avg) max and WR max is determined by tCK(avg) min.
WR[cycles] = RU{ tWR[nS] / tCK(avg)[nS] }, where RU stands for round up. The mode register must be programmed to this
value. This is also used with tRP to determine tDAL.
Figure 2 – Mode Register Set (MRS)
8.2.2 Extend Mode Register Set Commands (EMRS)
8.2.2.1 Extend Mode Register Set Command (1), EMR (1)
( CS = "L", RAS = "L", CAS = "L", WE = "L", BA0 = "H", BA1 = "L, BA2 = "L" A0 to A14 =
Register data)
The extended mode register (1) stores the data for enabling or disabling the DLL, output driver
strength, additive latency, ODT, DQS disable, OCD program. The default value of the extended
mode register (1) is not defined, therefore the extended mode register (1) must be programmed during
initialization for proper operation. The DDR2 SDRAM should be in all bank precharge with CKE
already high prior to writing into the extended mode register (1). The mode register set command
cycle time (tMRD) must be satisfied to complete the write operation to the extended mode register (1).
Extended mode register (1) contents can be changed using the same command and clock cycle
requirements during normal operation as long as all banks are in the precharge state. A0 is used for
DLL enable or disable. A1 is used for enabling a reduced strength output driver. A[5:3] determines the
additive latency, A[9:7] are used for OCD control, A10 is used for DQS disable. A2 and A6 are used
for ODT setting.
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8.2.2.2 DLL Enable/Disable
The DLL must be enabled for normal operation. DLL enable is required during power-up initialization,
and upon returning to normal operation after having the DLL disabled. The DLL is automatically
disabled when entering Self Refresh operation and is automatically re-enabled and reset upon exit of
Self Refresh operation. Any time the DLL is enabled (and subsequently reset), 200 clock cycles must
occur before a Read command can be issued to allow time for the internal clock to be synchronized
with the external clock. Failing to wait for synchronization to occur may result in a violation of the tAC
or tDQSCK parameters.
BA2
BA1
BA0
A14
A13
A12
A11
A10
A9
A8
A7
A6
0
0
1
0
0
Qoff
RDQS
DQS
A6
A2
Rtt (nominal)
BA1
BA0
MRS mode
0
0
ODT disabled
0
0
MRS
0
1
75 ohm
0
Enable
0
1
EMR (1)
1
0
150 ohm
1
Disable
1
0
EMR (2)
1
1
1
1
EMR (3)
OCD program
A5
Rtt
A4
A3
A2
Additive
WR
LatencyBT
Rtt
0
1
0
DLL
50 ohm*1
DLL Enable
Driver strength control
A1
Output driver
impedance control
Driver size
0
Normal
OCD Calibration Program
100%
1
Reduced
OCD calibration mode exit; matain setting
60%
Additive Latency
0
0
1
Drive (1)
0
1
0
Drive (0)
A5
A4
A3
Latency
1
0
0
Adjust mode*2
0
0
0
0
1
1
1
OCD Calibration default*3
0
0
1
1
0
1
0
2
0
1
1
3
1
0
0
4
1
0
1
5
1
1
0
6
1
1
1
Resesved
Qoff
Extended Mode Register (1)
(Optional)*4
Output duffers enabled
Output duffers disabled
A10
DQS
0
Enable
1
Disable
A11
A10
A11
RDQS Enable*5
(RDQS Enable)
(DQS Enable)
RDQS/DM
RDQS
DQS
DQS
0
Disable
0 (Disable)
0 (Enable)
DM
Hi-z
DQS
DQS
1
Enable
0 (Disable)
1 (Disable)
DM
Hi-z
DQS
Hi-z
1 (Enable)
0 (Enable)
RDQS
RDQS
DQS
DQS
1 (Enable)
1 (Disable)
RDQS
Hi-z
DQS
Hi-z
DDR2-667/800
A12
0
A7
D.I.C
Address Field
DDR2-1066
0
A8
A0
A0
Driver impedance adjustment
A9
A1
Strobe Function Matrix
Notes:
1. Optional for DDR2-667, mandatory for DDR2-800 and DDR2-1066.
2. When Adjust mode is issued, AL from previously set value must be applied.
3. After setting to default, OCD calibration mode needs to be exited by setting A9-A7 to 000. Refer to the section 8.2.3 for
detailed information.
4. Output disabled - DQs, DQS, DQS , RDQS, RDQS . This feature is used in conjunction with DIMM IDD measurements
when IDDQ is not desired to be included.
5. If RDQS is enabled, the DM function is disabled. RDQS is active for reads and don’t care for writes.
Figure 3 – EMR (1)
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8.2.2.3
Extend Mode Register Set Command (2), EMR (2)
( CS = "L", RAS = "L", CAS = "L", WE = "L", BA0 = "L", BA1 = "H", BA2 = "L" A0 to A14 =
Register data)
The extended mode register (2) controls refresh related features. The default value of the extended
mode register (2) is not defined, therefore the extended mode register (2) must be programmed during
initialization for proper operation.
The DDR2 SDRAM should be in all bank precharge state with CKE already high prior to writing into
the extended mode register (2). The mode register set command cycle time (tMRD) must be satisfied to
complete the write operation to the extended mode register (2). Mode register contents can be
changed using the same command and clock cycle requirements during normal operation as long as
all banks are in the precharge state.
BA2
0*1
BA1
BA0
1
0
A14
A13
A12
A11
0*1
A10
A9
A8
A7
A6
A5
A4
A3
A1
0*1
SELF
MRS mode
A7
0
0
MRS
0
Disable
0
1
EMR (1)
1
Enable*2
1
0
EMR (2)
1
1
EMR (3)
BA1 BA0
A2
A0
Address Field
Extended Mode Register (2)
High Temperature Self Refresh Rate Enable
Notes:
1. The rest bits in EMR (2) is reserved for future use and all bits in EMR (2) except A7, BA0, BA1 and BA2 must be
programmed to “0” when setting the extended mode register (2) during initialization.
2. When DRAM is operated at 85°C < TCASE ≤ 95°C the extended Self Refresh rate must be enabled by setting bit A7 to “1”
before the Self Refresh mode can be entered.
Figure 4 – EMR (2)
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8.2.2.4
Extend Mode Register Set Command (3), EMR (3)
( CS = "L", RAS = "L", CAS = "L", WE = "L", BA0 = "H", BA1 = "H", BA2 = "L", A0 to A14 =
Register data)
No function is defined in extended mode register (3). The default value of the EMR (3) is not defined,
therefore the EMR (3) must be programmed during initialization for proper operation.
BA2 BA1 BA0 A14 A13 A12 A11 A10
0*1
1
1
A9
A8
A7
A6
A5
0*1
A4
A3
A2
A1
A0
Address Field
Extended Mode Register (3)
Note:
1. All bits in EMR(3) except BA0 and BA1 are reserved for future use and must be set to “0” when programming the EMR(3).
Figure 5 – EMR (3)
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8.2.3 Off-Chip Driver (OCD) Impedance Adjustment
DDR2 SDRAM supports driver calibration feature and the flow chart in Figure 6 is an example of the
sequence. Every calibration mode command should be followed by “OCD calibration mode exit”
before any other command being issued. MRS should be set before entering OCD impedance
adjustment and On Die Termination (ODT) should be carefully controlled depending on system
environment.
All MR shoud be programmed before entering OCD impedance adjustment and ODT should
be carefully controlled depending on system environment
Start
EMRS: OCD calibration mode exit
EMRS: Drive(1)
DQ &DQS High; DQS Low
Test
EMRS: Drive(0)
DQ &DQS Low; DQS High
ALL OK
ALL OK
Test
Need Calibration
Need Calibration
EMRS: OCD calibration mode exit
EMRS: OCD calibration mode exit
EMRS:
Enter Adjust Mode
EMRS:
Enter Adjust Mode
BL=4 code input to all DQs
Inc, Dec or NOP
BL=4 code input to all DQs
Inc, Dec or NOP
EMRS: OCD calibration mode exit
EMRS: OCD calibration mode exit
EMRS: OCD calibration mode exit
End
Figure 6 – OCD Impedance Adjustment Flow Chart
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8.2.3.1 Extended Mode Register for OCD Impedance Adjustment
OCD impedance adjustment can be done using the following EMRS mode. In drive mode all outputs
are driven out by DDR2 SDRAM and drive of RDQS is dependent on EMR bit enabling RDQS
operation. In Drive (1) mode, all DQ, DQS (and RDQS) signals are driven HIGH and all DQS signals
are driven LOW. In Drive (0) mode, all DQ, DQS (and RDQS) signals are driven LOW and all DQS
signals are driven HIGH. In adjust mode, BL = 4 of operation code data must be used. In case of OCD
calibration default, output driver characteristics have a nominal impedance value of 18 Ω during
nominal temperature and voltage conditions. OCD applies only to normal full strength output drive
setting defined by EMR (1) and if reduced strength is set, OCD default driver characteristics are not
applicable. When OCD calibration adjust mode is used, OCD default output driver characteristics are
not applicable. After OCD calibration is completed or driver strength is set to default, subsequent
EMRS commands not intended to adjust OCD characteristics must specify A[9:7] as ’000’ in order to
maintain the default or calibrated value.
Table 1 – OCD Drive Mode Program
A9
A8
A7
Operation
0
0
0
OCD calibration mode exit
0
0
1
Drive (1) DQ, DQS, (RDQS) HIGH and DQS LOW
0
1
0
Drive (0) DQ, DQS, (RDQS) LOW and DQS HIGH
1
0
0
Adjust mode
1
1
1
OCD calibration default
8.2.3.2 OCD Impedance Adjust
To adjust output driver impedance, controllers must issue the ADJUST EMRS command along with a
4 bit burst code to DDR2 SDRAM as in table 2. For this operation, Burst Length has to be set to BL =
4 via MRS command before activating OCD and controllers must drive the burst code to all DQs at the
same time. DT0 in table 2 means all DQ bits at bit time 0, DT1 at bit time 1, and so forth. The driver
output impedance is adjusted for all DDR2 SDRAM DQs simultaneously and after OCD calibration, all
DQs and DQS’s of a given DDR2 SDRAM will be adjusted to the same driver strength setting. The
maximum step count for adjustment is 16 and when the limit is reached, further increment or
decrement code has no effect. The default setting may be any step within the 16 step range. When
Adjust mode command is issued, AL from previously set value must be applied.
Table 2 – OCD Adjust Mode Program
4 bit burst code inputs to all DQs
Operation
DT0
DT1
DT2
DT3
0
0
0
0
NOP (No operation)
NOP (No operation)
0
0
0
1
Increase by 1 step
NOP
0
0
1
0
Decrease by 1 step
NOP
0
1
0
0
NOP
Increase by 1 step
1
0
0
0
NOP
Decrease by 1 step
0
1
0
1
Increase by 1 step
Increase by 1 step
0
1
1
0
Decrease by 1 step
Increase by 1 step
1
0
0
1
Increase by 1 step
Decrease by 1 step
1
0
1
0
Decrease by 1 step
Decrease by 1 step
Pull-up driver strength
Other Combinations
Pull-down driver strength
Reserved
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For proper operation of adjust mode, WL = RL - 1 = AL + CL - 1 clocks and tDS/tDH should be met as
shown in Figure 7. For input data pattern for adjustment, DT0 - DT3 is a fixed order and is not affected
by burst type (i.e., sequential or interleave).
CLK
CLK
CMD
EMRS
NOP
NOP
WL
NOP
NOP
NOP
NOP
DQS
EMRS
NOP
WR
DQS_in
tDS tDH
DQ_in
DT0
DT1
DT2
DT3
DM
OCD adjust mode
OCD calibration mode exit
Figure 7 – OCD Adjust Mode
8.2.3.3 Drive Mode
Drive mode, both Drive (1) and Drive (0), is used for controllers to measure DDR2 SDRAM Driver
impedance. In this mode, all outputs are driven out tOIT after “enter drive mode” command and all
output drivers are turned-off tOIT after “OCD calibration mode exit” command as shown in Figure 8.
CLK
CLK
CMD
EMRS
NOP
NOP
NOP
NOP
tOIT
DQS
DQS
EMRS
NOP
NOP
NOP
tOIT
HI-Z
DQS high & DQS low for Drive (1), DQS low & DQS high for Drive (0)
DQs high for Drive (1)
DQ
DQs low for Drive (0)
Enter Drive mode
OCD calibration mode exit
Figure 8 – OCD Drive Mode
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8.2.4 On-Die Termination (ODT)
On-Die Termination (ODT) is a new feature on DDR2 components that allows a DRAM to turn on/off
termination resistance for each DQ, DQS/ DQS , RDQS/ RDQS , and DM signal via the ODT control pin.
The ODT feature is designed to improve signal integrity of the memory channel by allowing the DRAM
controller to independently turn on/off termination resistance for any or all DRAM devices.
The ODT function can be used for all active and standby modes. ODT is turned off and not supported
in Self Refresh mode. (Example timing waveforms refer to 11.2, 11.3 ODT Timing for
Active/Standby/Power Down Mode and 11.4, 11.5 ODT timing mode switch at entering/exiting power
down mode diagram in Chapter 11)
VDDQ
VDDQ
VDDQ
sw1
sw2
sw3
Rval1
Rval2
Rval3
DRAM
Input
Buffer
Input
Pin
Rval1
Rval2
Rval3
sw1
sw2
sw3
VSSQ
VSSQ
VSSQ
Switch (sw1, sw2, sw3) is enabled by ODT pin.
Selection among sw1, sw2, and sw3 is determined by “Rtt (nominal)” in EMR (1).
Termination included on all DQs, DM, DQS, DQS , RDQS, and RDQS pins.
Figure 9 – Functional Representation of ODT
8.2.5
ODT related timings
8.2.5.1 MRS command to ODT update delay
During normal operation the value of the effective termination resistance can be changed with an
EMRS command. The update of the Rtt setting is done between tMOD,min and tMOD,max, and CKE
must remain HIGH for the entire duration of tMOD window for proper operation. The timings are shown
in the following timing diagram.
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CMD
EMRS
NOP
NOP
NOP
NOP
NOP
CLK
CLK
ODT
tIS
tMOD,max
tAOFD
tMOD,min
Rtt
Old setting
Updating
New setting
1) EMRS command directed to EMR(1), which updates the information in EMR(1)[A6,A2], i.e. Rtt (Nominal).
2) "setting" in this diagram is the Register and I/O setting, not what is measured from outside.
Figure 10 – ODT update delay timing - tMOD
However, to prevent any impedance glitch on the channel, the following conditions must be met.
tAOFD must be met before issuing the EMRS command.
ODT must remain LOW for the entire duration of tMOD window, until tMOD,max is met.
Now the ODT is ready for normal operation with the new setting, and the ODT signal may be raised
again to turned on the ODT. Following timing diagram shows the proper Rtt update procedure.
CLK
CLK
EMRS
CMD
NOP
NOP
NOP
NOP
NOP
ODT
tIS
tAOFD
Rtt
tMOD,max
tAOND
Old setting
New setting
1) EMRS command directed to EMR(1), which updates the information in EMR(1)[A6,A2], i.e. Rtt (Nominal).
2) "setting" in this diagram is what is measured from outside.
Figure 11 – ODT update delay timing - tMOD, as measured from outside
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8.3
Command Function
8.3.1
Bank Activate Command
( CS ="L", RAS ="L", CAS ="H", WE ="H", BA0, BA1, BA2=Bank, A0 to A14 be row address)
The Bank Activate command must be applied before any Read or Write operation can be executed.
Immediately after the bank active command, the DDR2 SDRAM can accept a read or write command
on the following clock cycle. If a Read/Write command is issued to a bank that has not satisfied the
tRCDmin specification, then additive latency must be programmed into the device to delay when the
Read/Write command is internally issued to the device. The additive latency value must be chosen to
assure tRCDmin is satisfied. Additive latencies of 0, 1, 2, 3, 4, 5 and 6 are supported. Once a bank has
been activated it must be precharged before another Bank Activate command can be applied to the
same bank. The bank active and precharge times are defined as tRAS and tRP, respectively. The
minimum time interval between successive Bank Activate commands to the same bank is determined
by the RAS cycle time of the device (tRC). The minimum time interval between Bank Activate
commands is tRRD.
In order to ensure that components with 8 internal memory banks do not exceed the instantaneous
current supplying capability, certain restrictions on operation of the 8 banks must be observed. There
are two rules. One for restricting the number of sequential ACT commands that can be issued and
another for allowing more time for RAS precharge for a Precharge All command. The rules are as
follows:
Sequential Bank Activation Restriction: No more than 4 banks may be activated in a rolling tFAW
window. Converting to clocks is done by dividing tFAW[nS] by tCK(avg)[ns], and rounding up to
next integer value. As an example of the rolling window, if RU{ (tFAW / tCK(avg) } is 10 clocks,
and an activate command is issued in clock N, no more than three further activate commands
may be issued at or between clock N+1 and N+9.
Precharge All Allowance: tRP for a Precharge All command is equal to tnRP + 1 x nCK, where
tnRP = RU{ tRP / tCK(avg) } and tRP is the value for a single bank precharge.
T0
T1
T2
T3
Tn
Tn+1
Tn+2
Tn+3
CLK
CLK
Internal RAS - RAS delay (≥ tRCDmin)
Address
Bank A
Row Addr.
Bank A
Col. Addr.
Bank B
Row Addr.
Bank B
Col. Addr.
Bank A
Addr.
Bank B
Addr.
Bank A
Row Addr.
Bank A
Precharge
Bank B
Precharge
Bank A
Activate
CAS - CAS delay time(tCCD)
tRCD = 1
Additive Latency delay(AL)
Read Begins
RAS - RAS delay time(≥ tRRD)
Command
Bank A
Activate
Bank A
Post CAS
Read
Bank B
Activate
Bank B
Post CAS
Read
Bank Active (≥ tRAS)
Bank Precharge time (≥ tRP)
RAS Cycle time (≥ tRC)
Figure 12 – Bank activate command cycle: tRCD = 3, AL = 2, tRP = 3, tRRD = 2, tCCD = 2
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8.3.2
Read Command
( CS ="L", RAS ="H", CAS ="L", WE ="H", BA0, BA1, BA2=Bank, A10="L", A0 to A9=Column Address)
The READ command is used to initiate a burst read access to an active row. The value on BA0, BA1,
BA2 inputs selects the bank, and the A0 to A9 address inputs determine the starting column address.
The address input A10 determines whether or not Auto-precharge is used. If Auto-precharge is
selected, the row being accessed will be precharged at the end of the READ burst; if Auto-precharge
is not selected, the row will remain open for subsequent accesses.
8.3.3
Write Command
( CS ="L", RAS ="H", CAS ="L", WE ="L", BA0, BA1, BA2=Bank, A10="L", A0 to A9=Column Address)
The WRITE command is used to initiate a burst write access to an active row. The value on BA0, BA1,
BA2 inputs selects the bank, and the A0 to A9 address inputs determine the starting column address.
The address input A10 determines whether or not Auto-precharge is used. If Auto-precharge is
selected, the row being accessed will be precharged at the end of the WRITE burst; if Auto-precharge
is not selected, the row will remain open for subsequent accesses.
8.3.4
Burst Read with Auto-precharge Command
( CS ="L", RAS ="H", CAS ="L", WE ="H", BA0, BA1, BA2=Bank, A10="H", A0 to A9=Column Address)
If A10 is HIGH when a Read Command is issued, the Read with Auto-precharge function is engaged.
The DDR2 SDRAM starts an Auto-precharge operation on the rising edge which is (AL + BL/2) cycles
later than the read with AP command if tRAS(min) and tRTP(min) are satisfied.
8.3.5
Burst Write with Auto-precharge Command
( CS ="L", RAS ="H", CAS ="L", WE ="L", BA0, BA1, BA2=Bank, A10="H", A0 to A9=Column Address)
If A10 is HIGH when a Write Command is issued, the Write with Auto-precharge function is engaged.
The DDR2 SDRAM automatically begins precharge operation after the completion of the burst write
plus write recovery time (WR) programmed in the mode register.
8.3.6
Precharge All Command
( CS ="L", RAS ="L", CAS ="H", WE ="L", BA0, BA1, BA2=Don’t Care, A10="H", A0 to A9 and A11 to
A14=Don’t Care)
The Precharge All command precharge all banks simultaneously. Then all banks are switched to the
idle state.
8.3.7
Self Refresh Entry Command
( CS ="L", RAS ="L", CAS ="L", WE ="H", CKE="L", BA0, BA1, BA2, A0 to A14=Don’t Care)
The Self Refresh command can be used to retain data, even if the rest of the system is powered
down. When in the Self Refresh mode, the DDR2 SDRAM retains data without external clocking. The
DDR2 SDRAM device has a built-in timer to accommodate Self Refresh operation. ODT must be
turned off before issuing Self Refresh command, by either driving ODT pin LOW or using an EMRS
command. Once the command is registered, CKE must be held LOW to keep the device in Self
Refresh mode. The DLL is automatically disabled upon entering Self Refresh and is automatically
enabled upon exiting Self Refresh. When the DDR2 SDRAM has entered Self Refresh mode, all of the
external signals except CKE, are “Don’t Care”.
The clock is internally disabled during self refresh operation to save power. The user may change the
external clock frequency or halt the external clock one clock after Self Refresh entry is registered;
however, the clock must be restarted and stable before the device can exit self refresh operation.
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8.3.8
Self Refresh Exit Command
(CKE="H", CS ="H" or CKE="H", CS ="L", RAS ="H", CAS ="H", WE ="H", BA0, BA1, BA2, A0 to
A14=Don’t Care)
The procedure for exiting Self Refresh requires a sequence of commands. First, the clock must be
stable prior to CKE going back HIGH. Once Self Refresh Exit is registered, a delay of at least tXSNR
must be satisfied before a valid command can be issued to the device to allow for any internal refresh
in progress. CKE must remain HIGH for the entire Self Refresh exit period tXSRD for proper operation
except for self refresh re-entry.
Upon exit from Self Refresh, the DDR2 SDRAM can be put back into Self Refresh mode after waiting
at least tXSNR period and issuing one refresh command (refresh period of tRFC). NOP or Deselect
commands must be registered on each positive clock edge during the Self Refresh exit interval tXSNR.
ODT should be turned off during tXSRD.
The use of Self Refresh mode introduces the possibility that an internally timed refresh event can be
missed when CKE is raised for exit from Self Refresh mode. Upon exit from Self Refresh, the DDR2
SDRAM requires a minimum of one extra auto refresh command before it is put back into Self Refresh
mode.
8.3.9
Refresh Command
( CS ="L", RAS ="L", CAS ="L", WE ="H", CKE="H", BA0, BA1, BA2, A0 to A14=Don’t Care)
Refresh is used during normal operation of the DDR2 SDRAM. This command is non persistent, so it
must be issued each time a refresh is required.
The refresh addressing is generated by the internal refresh controller. This makes the address bits
“Don’t Care” during an Auto Refresh command. The DDR2 SDRAM requires Auto Refresh cycles at
an average periodic interval of tREFI (max.).
When the refresh cycle has completed, all banks of the DDR2 SDRAM will be in the precharged (idle)
state. A delay between the auto refresh command (REF) and the next activate command or
subsequent auto refresh command must be greater than or equal to the auto refresh cycle time (tRFC).
To allow for improved efficiency in scheduling and switching between tasks, some flexibility in the
absolute refresh interval is provided. A maximum of eight Refresh commands can be posted to any
given DDR2 SDRAM, meaning that the maximum absolute interval between any Refresh command
and the next Refresh command is 9 x tREFI.
T0
T1
T2
T3
Tm
Tn
Tn + 1
CLK/CLK
"HIGH"
CKE
≥ tRFC
≥ tRP
CMD
Precharge
NOP
NOP
REF
≥ tRFC
REF
NOP
ANY
Figure 13 – Refresh command
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8.3.10 No-Operation Command
( CS ="L", RAS ="H", CAS ="H", WE ="H", CKE, BA0, BA1, BA2, A0 to A14=Don’t Care)
The No-Operation command simply performs no operation (same command as Device Deselect).
8.3.11 Device Deselect Command
( CS ="H", RAS , CAS , WE , CKE, BA0, BA1, BA2, A0 to A14=Don’t Care)
The Device Deselect command disables the command decoder so that the RAS , CAS , WE and
Address inputs are ignored. This command is similar to the No-Operation command.
8.4
Read and Write access modes
The DDR2 SDRAM provides a fast column access operation. A single Read or Write Command will
initiate a serial read or write operation on successive clock cycles. The boundary of the burst cycle is
strictly restricted to specific segments of the page length.
The 32 Mbit x 8 I/O x 8 Bank chip has a page length of 1024 bits (defined by CA0 to CA9)*. The page
length of 1024 is divided into 256 or 128 uniquely addressable boundary segments depending on
burst length, 256 for 4 bit burst, 128 for 8 bit burst respectively. A 4-bit or 8-bit burst operation will
occur entirely within one of the 256 or 128 groups beginning with the column address supplied to the
device during the Read or Write Command (CA0 to CA9). The second, third and fourth access will
also occur within this group segment. However, the burst order is a function of the starting address,
and the burst sequence.
A new burst access must not interrupt the previous 4 bit burst operation in case of BL = 4 setting.
However, in case of BL = 8 setting, two cases of interrupt by a new burst access are allowed, one
reads interrupted by a read, the other writes interrupted by a write with 4 bit burst boundary
respectively. The minimum CAS to CAS delay is defined by tCCD, and is a minimum of 2 clocks for
read or write cycles.
Note: Page length is a function of I/O organization and column addressing
32M bits × 8 organization (CA0 to CA9); Page Length = 1024 bits
8.4.1
Posted CAS
Posted CAS operation is supported to make command and data bus efficient for sustainable
bandwidths in DDR2 SDRAM. In this operation, the DDR2 SDRAM allows a CAS read or write
command to be issued immediately after the RAS bank activate command (or any time during the
RAS - CAS -delay time, tRCD, period). The command is held for the time of the Additive Latency (AL)
before it is issued inside the device. The Read Latency (RL) is controlled by the sum of AL and the
CAS Latency (CL). Therefore if a user chooses to issue a Read/Write command before the tRCDmin,
then AL (greater than 0) must be written into the EMR (1). The Write Latency (WL) is always defined
as RL -1 (Read Latency -1) where Read Latency is defined as the sum of Additive Latency plus CAS
Latency (RL = AL + CL). Read or Write operations using AL allow seamless bursts. (Example timing
waveforms refer to 11.10 and 11.11 seamless burst read/write operation diagram in Chapter 11)
8.4.1.1
Examples of posted CAS operation
Examples of a read followed by a write to the same bank where AL = 2 and where AL = 0 are shown
in Figures 14 and 15, respectively.
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-1
0
1
Active
A-Bank
Read
A-Bank
2
3
4
5
6
7
8
9
10
11
12
11
12
CLK /CLK
CMD
Write
A-Bank
WL=RL-1=4
CL=3
AL=2
DQS/DQS
≥ tRCD
RL=AL+CL=5
DQ
Dout0 Dout1
Din0
Dout2 Dout3
Din1
Din2
Din3
[AL = 2 and CL = 3, RL = (AL + CL) = 5, WL = (RL - 1) = 4, BL = 4]
Figure 14 – Example 1: Read followed by a write to the same bank,
where AL = 2 and CL = 3, RL = (AL + CL) = 5, WL = (RL - 1) = 4, BL = 4
-1
0
1
2
3
4
5
6
7
8
9
10
CLK/CLK
AL=0
CMD
Active
A-Bank
Read
A-Bank
Write
A-Bank
WL=RL-1=2
CL=3
DQS/DQS
≥ tRCD
RL=AL+CL=3
DQ
Dout0
Dout1 Dout2 Dout3
Din0
Din1
Din2
Din3
AL = 0 and CL = 3, RL = (AL + CL) = 3, WL = (RL - 1) = 2, BL = 4]
Figure 15 – Example 2: Read followed by a write to the same bank,
where AL = 0 and CL = 3, RL = (AL + CL) = 3, WL = (RL - 1) = 2, BL = 4
8.4.2 Burst mode operation
Burst mode operation is used to provide a constant flow of data to memory locations (write cycle), or
from memory locations (read cycle). The parameters that define how the burst mode will operate are
burst sequence and burst length. The DDR2 SDRAM supports 4 bit and 8 bit burst modes only. For 8
bit burst mode, full interleave address ordering is supported, however, sequential address ordering is
nibble based for ease of implementation. The burst length is programmable and defined by MR A[2:0].
The burst type, either sequential or interleaved, is programmable and defined by MR [A3]. Seamless
burst read or write operations are supported.
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Unlike DDR1 devices, interruption of a burst read or writes cycle during BL = 4 mode operation is
prohibited. However in case of BL = 8 mode, interruption of a burst read or write operation is limited to
two cases, reads interrupted by a read, or writes interrupted by a write. (Example timing waveforms
refer to 11.12 and 11.13 Burst read and write interrupt timing diagram in Chapter 11)
Therefore the Burst Stop command is not supported on DDR2 SDRAM devices.
Table 3 – Burst Length and Sequence
Burst Length
4
8
Starting Address
(A2 A1 A0)
Sequential Addressing
(decimal)
Interleave Addressing
(decimal)
x00
0, 1, 2, 3
0, 1, 2, 3
x01
1, 2, 3, 0
1, 0, 3, 2
x10
2, 3, 0, 1
2, 3, 0, 1
x11
3, 0, 1, 2
3, 2, 1, 0
000
0, 1, 2, 3, 4, 5, 6, 7
0, 1, 2, 3, 4, 5, 6, 7
001
1, 2, 3, 0, 5, 6, 7, 4
1, 0, 3, 2, 5, 4, 7, 6
010
2, 3, 0, 1, 6, 7, 4, 5
2, 3, 0, 1, 6, 7, 4, 5
011
3, 0, 1, 2, 7, 4, 5, 6
3, 2, 1, 0, 7, 6, 5, 4
100
4, 5, 6, 7, 0, 1, 2, 3
4, 5, 6, 7, 0, 1, 2, 3
101
5, 6, 7, 4, 1, 2, 3, 0
5, 4, 7, 6, 1, 0, 3, 2
110
6, 7, 4, 5, 2, 3, 0, 1
6, 7, 4, 5, 2, 3, 0, 1
111
7, 4, 5, 6, 3, 0, 1, 2
7, 6, 5, 4, 3, 2, 1, 0
8.4.3 Burst read mode operation
Burst Read is initiated with a READ command. The address inputs determine the starting column
address for the burst. The delay from the start of the command to when the data from the first cell
appears on the outputs is equal to the value of the read latency (RL). The data strobe output (DQS) is
driven LOW one clock cycle before valid data (DQ) is driven onto the data bus. The first bit of the burst
is synchronized with the rising edge of the data strobe (DQS). Each subsequent data-out appears on
the DQ pin in phase with the DQS signal in a source synchronous manner. The RL is equal to an
additive latency (AL) plus CAS Latency (CL). The CL is defined by the Mode Register Set (MRS). The
AL is defined by the Extended Mode Register EMR (1). (Example timing waveforms refer to 11.6 and
11.7 Data output (read) timing and Burst read operation diagram in Chapter 11)
8.4.4 Burst write mode operation
Burst Write is initiated with a WRITE command. The address inputs determine the starting column
address for the burst. Write Latency (WL) is defined by a Read Latency (RL) minus one and is equal
to (AL + CL -1); and is the number of clocks of delay that are required from the time the write
command is registered to the clock edge associated to the first DQS strobe. A data strobe signal
(DQS) should be driven LOW (preamble) nominally half clock prior to the WL. The first data bit of the
burst cycle must be applied to the DQ pins at the first rising edge of the DQS following the preamble.
The tDQSS specification must be satisfied for each positive DQS transition to its associated clock edge
during write cycles. The subsequent burst bit data are issued on successive edges of the DQS until
the burst length is completed, which is 4 or 8 bit burst. When the burst has finished, any additional
data supplied to the DQ pins will be ignored. The DQ Signal is ignored after the burst write operation is
complete. The time from the completion of the burst write to bank precharge is the write recovery time
(WR). (Example timing waveforms refer to 11.8 and 11.9 Data input (write) timing and Burst write
operation diagram in Chapter 11)
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8.4.5 Write data mask
One write data mask (DM) pin for each 8 data bits (DQ) will be supported on DDR2 SDRAM,
consistent with the implementation on DDR1 SDRAM. It has identical timings on write operations as
the data bits, and though used in a unidirectional manner, is internally loaded identically to data bits to
insure matched system timing. DM function is disabled, when RDQS / RDQS are enabled by
EMRS(1). (Example timing waveform refer to 11.14 Write operation with Data Mask diagram in
Chapter 11)
8.5
Burst Interrupt
Read or Write burst interruption is prohibited for burst length of 4 and only allowed for burst length of 8
under the following conditions:
1. Read burst of 8 can only be interrupted by another Read command. Read burst interruption by
Write or Precharge Command is prohibited.
2. Write burst of 8 can only be interrupted by another Write command. Write burst interruption by
Read or Precharge Command is prohibited.
3. Read burst interrupt must occur exactly two clocks after the previous Read command. Any other
Read burst interrupt timings are prohibited.
4. Write burst interrupt must occur exactly two clocks after the previous Write command. Any other
Write burst interrupt timings are prohibited.
5. Read or Write burst interruption is allowed to any bank inside the DDR2 SDRAM.
6. Read or Write burst with Auto-precharge enabled is not allowed to interrupt.
7. Read burst interruption is allowed by a Read with Auto-precharge command.
8. Write burst interruption is allowed by a Write with Auto-precharge command.
9. All command timings are referenced to burst length set in the mode register. They are not
referenced to the actual burst. For example below:
Minimum Read to Precharge timing is AL + BL/2 where BL is the burst length set in the
mode register and not the actual burst (which is shorter because of interrupt).
Minimum Write to Precharge timing is WL + BL/ 2 + tWR, where tWR starts with the rising
clock after the un-interrupted burst end and not from the end of the actual burst end.
(Example timing waveforms refer to 11.12 and 11.13 Burst read and write interrupt timing diagram in
Chapter 11)
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8.6
Precharge operation
The Precharge Command is used to precharge or close a bank that has been activated. The
Precharge Command can be used to precharge each bank independently or all banks simultaneously.
Four address bits A10, BA0 and BA1 and BA2 are used to define which bank to precharge when the
command is issued.
Table 4 – Bank selection for precharge by address bits
A10
LOW
LOW
LOW
LOW
LOW
LOW
LOW
LOW
HIGH
8.6.1
BA2
LOW
LOW
LOW
LOW
HIGH
HIGH
HIGH
HIGH
Don’t Care
BA1
LOW
LOW
HIGH
HIGH
LOW
LOW
HIGH
HIGH
Don’t Care
BA0
LOW
HIGH
LOW
HIGH
LOW
HIGH
LOW
HIGH
Don’t Care
Precharge Bank(s)
Bank 0 only
Bank 1 only
Bank 2 only
Bank 3 only
Bank 4 only
Bank 5 only
Bank 6 only
Bank 7 only
All Banks
Burst read operation followed by precharge
Minimum Read to Precharge command spacing to the same bank = AL + BL/2 + max(RTP, 2) - 2 clks
For the earliest possible precharge, the precharge command may be issued on the rising edge which
is “Additive Latency (AL) + BL/2 + max(RTP, 2) - 2 clocks” after a Read command. A new bank active
(command) may be issued to the same bank after the RAS precharge time (tRP). A precharge
command cannot be issued until tRAS is satisfied.
The minimum Read to Precharge spacing has also to satisfy a minimum analog time from the rising
clock edge that initiates the last 4-bit prefetch of a Read to Precharge command. This time is called
tRTP (Read to Precharge). For BL = 4 this is the time from the actual read (AL after the Read
command) to Precharge command. For BL = 8 this is the time from AL + 2 clocks after the Read to the
Precharge command. (Example timing waveforms refer to 11.15 to 11.19 Burst read operation
followed by precharge diagram in Chapter 11)
8.6.2 Burst write operation followed by precharge
Minimum Write to Precharge Command spacing to the same bank = WL + BL/2 clks + tWR
For write cycles, a delay must be satisfied from the completion of the last burst write cycle until the
Precharge Command can be issued. This delay is known as a write recovery time (tWR) referenced
from the completion of the burst write to the precharge command. No Precharge command should be
issued prior to the tWR delay. (Example timing waveforms refer to 11.20 to 11.21 Burst write operation
followed by precharge diagram in Chapter 11)
8.7
Auto-precharge operation
Before a new row in an active bank can be opened, the active bank must be precharged using either
the Precharge command or the Auto-precharge function. When a Read or a Write command is given
to the DDR2 SDRAM, the CAS timing accepts one extra address, column address A10, to allow the
active bank to automatically begin precharge at the earliest possible moment during the burst read or
write cycle. If A10 is LOW when the READ or WRITE command is issued, then normal Read or Write
burst operation is executed and the bank remains active at the completion of the burst sequence. If
A10 is HIGH when the Read or Write command is issued, then the Auto-precharge function is
engaged. During Auto-precharge, a Read command will execute as normal with the exception that the
active bank will begin to precharge on the rising edge which is CAS Latency (CL) clock cycles before
the end of the read burst.
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Auto-precharge is also implemented during Write commands. The precharge operation engaged by
the Auto-precharge command will not begin until the last data of the burst write sequence is properly
stored in the memory array.
This feature allows the precharge operation to be partially or completely hidden during burst read
cycles (dependent upon CAS Latency) thus improving system performance for random data access.
The RAS lockout circuit internally delays the Precharge operation until the array restore operation
has been completed (tRAS satisfied) so that the Auto-precharge command may be issued with any
read or write command.
8.7.1 Burst read with Auto-precharge
If A10 is HIGH when a Read Command is issued, the Read with Auto-precharge function is engaged.
The DDR2 SDRAM starts an Auto-precharge operation on the rising edge which is (AL + BL/2) cycles
later from the Read with AP command if tRAS(min) and tRTP(min) are satisfied. (Example timing
waveform refer to 11.22 Burst read operation with Auto-precharge diagram in Chapter 11)
If tRAS(min) is not satisfied at the edge, the start point of Auto-precharge operation will be delayed until
tRAS(min) is satisfied.
If tRTP(min) is not satisfied at the edge, the start point of Auto-precharge operation will be delayed until
tRTP(min) is satisfied.
In case the internal precharge is pushed out by tRTP, tRP starts at the point where tRTP ends (not at the
next rising clock edge after this event). So for BL = 4 the minimum time from Read with Autoprecharge to the next Activate command becomes AL + RU{ (tRTP + tRP) / tCK(avg) } (Example timing
waveform refer to 11.23 Burst read operation with Auto-precharge diagram in Chapter 11.), for BL = 8
the time from Read with Auto-precharge to the next Activate command is AL + 2 + RU{ (tRTP + tRP) /
tCK(avg) }, where RU stands for “rounded up to the next integer”. In any event internal precharge does
not start earlier than two clocks after the last 4-bit prefetch.
A new bank active command may be issued to the same bank if the following two conditions are
satisfied simultaneously.
The RAS precharge time (tRP) has been satisfied from the clock at which the Auto-precharge
begins.
The RAS cycle time (tRC) from the previous bank activation has been satisfied.
(Example timing waveforms refer to 11.24 to 11.25 Burst read with Auto-precharge followed by an
activation to the same bank (tRC Limit) and (tRP Limit) diagram in Chapter 11)
8.7.2 Burst write with Auto-precharge
If A10 is HIGH when a Write Command is issued, the Write with Auto-Precharge function is engaged.
The DDR2 SDRAM automatically begins precharge operation after the completion of the burst write
plus write recovery time (WR) programmed in the mode register. The bank undergoing Autoprecharge from the completion of the write burst may be reactivated if the following two conditions are
satisfied.
The data-in to bank activate delay time (WR + tRP) has been satisfied.
The RAS cycle time (tRC) from the previous bank activation has been satisfied.
(Example timing waveforms refer to 11.26 to 11.27 Burst write with Auto-precharge (tRC Limit) and
(WR + tRP Limit) diagram in Chapter 11)
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Table 5 – Precharge & Auto-precharge clarifications
From
Command
To Command
Minimum Delay between “From
Command” to “To Command”
Unit
Notes
Read
Precharge (to same Bank as Read)
AL + BL/2 + max(RTP, 2) - 2
clks
1, 2
Precharge All
AL + BL/2 + max(RTP, 2) - 2
clks
1, 2
Precharge (to same Bank as Read w/AP)
AL + BL/2 + max(RTP, 2) - 2
clks
1, 2
Precharge All
AL + BL/2 + max(RTP, 2) - 2
clks
1, 2
Precharge (to same Bank as Write)
WL + BL/2 + tWR
clks
2
Precharge All
WL + BL/2 + tWR
clks
2
Precharge (to same Bank as Write w/AP)
WL + BL/2 + WR
clks
2
Precharge All
WL + BL/2 + WR
clks
2
Precharge (to same Bank as Precharge)
1
clks
2
Precharge All
1
clks
2
Precharge
1
clks
2
Precharge All
1
clks
2
Read w/AP
Write
Write w/AP
Precharge
Precharge
All
Notes:
1. RTP[cycles] = RU{ tRTP[nS] / tCK(avg)[nS] }, where RU stands for round up.
2. For a given bank, the precharge period should be counted from the latest precharge command, either one bank precharge or
precharge all, issued to that bank. The precharge period is satisfied after tRPall (= tRP + 1 x tCK) depending on the latest
precharge command issued to that bank.
8.8
Refresh Operation
DDR2 SDRAM requires a refresh of all rows in any rolling 64 ms interval. The necessary refresh can
be generated in one of two ways: by explicit Auto Refresh commands or by an internally timed Self
Refresh mode. Dividing the number of device rows into the rolling 64 ms interval defines the average
refresh interval, tREFI, which is a guideline to controllers for distributed refresh timing.
When CS , RAS and CAS are held LOW and WE HIGH at the rising edge of the clock, the chip
enters the Refresh mode (REF). All banks of the DDR2 SDRAM must be precharged and idle for a
minimum of the Precharge time (tRP) before the Refresh command (REF) can be applied. An address
counter, internal to the device, supplies the bank address during the refresh cycle. No control of the
external address bus is required once this cycle has started. (Example timing waveform refer to 11.28
Self Refresh diagram in Chapter 11)
8.9
Power Down Mode
Power-down is synchronously entered when CKE is registered LOW, along with NOP or Deselect
command. CKE is not allowed to go LOW while mode register or extended mode register command
time, or read or write operation is in progress. CKE is allowed to go LOW while any other operation
such as row activation, Precharge or Auto-precharge or Auto Refresh is in progress, but power down
IDD specification will not be applied until finishing those operations.
The DLL should be in a locked state when power-down is entered. Otherwise DLL should be reset
after exiting power-down mode for proper read operation.
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8.9.1 Power Down Entry
Two types of Power Down Mode can be performed on the device: Precharge Power Down Mode and
Active Power Down Mode.
If power down occurs when all banks are idle, this mode is referred to as Precharge Power Down; if
power down occurs when there is a row active in any bank, this mode is referred to as Active Power
Down. Entering power down deactivates the input and output buffers, excluding CLK, CLK , ODT and
CKE. Also the DLL is disabled upon entering Precharge Power Down or slow exit Active Power Down,
but the DLL is kept enabled during fast exit Active Power Down.
In power down mode, CKE LOW and a stable clock signal must be maintained at the inputs of the
DDR2 SDRAM, and ODT should be in a valid state but all other input signals are “Don’t Care”. CKE
LOW must be maintained until tCKE has been satisfied. Maximum power down duration is limited by
the refresh requirements of the device, which allows a maximum of 9 x tREFI if maximum posting of
REF is utilized immediately before entering power down. (Example timing waveforms refer to 11.29
Basic Power Down Entry and Exit diagram and 11.30 Precharged Power Down Entry and Exit diagram
in Chapter 11)
8.9.2 Power Down Exit
The power-down state is synchronously exited when CKE is registered HIGH (along with a NOP or
Deselect command). CKE high must be maintained until tCKE has been satisfied. A valid, executable
command can be applied with power-down exit latency, tXP, tXARD, or tXARDS, after CKE goes HIGH.
Power-down exit latency is defined at AC Characteristics table of this data sheet.
8.10 Input clock frequency change during precharge power down
DDR2 SDRAM input clock frequency can be changed under following condition:
DDR2 SDRAM is in precharged power down mode. ODT must be turned off and CKE must be at logic
LOW level. A minimum of 2 clocks must be waited after CKE goes LOW before clock frequency may
change. SDRAM input clock frequency is allowed to change only within minimum and maximum
operating frequency specified for the particular speed grade. During input clock frequency change,
ODT and CKE must be held at stable LOW levels.
Once input clock frequency is changed, stable new clocks must be provided to DRAM before
precharge power down may be exited and DLL must be RESET via MRS command after precharge
power down exit. Depending on new clock frequency an additional MRS or EMRS command may
need to be issued to appropriately set the WR, CL etc…
During DLL re-lock period, ODT must remain off. After the DLL lock time, the DRAM is ready to
operate with new clock frequency. (Example timing waveform refer to 11.31 Clock frequency change
in precharge Power Down mode diagram in Chapter 11)
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9. OPERATION MODE
9.1 Command Truth Table
CKE
COMMAND
Previous
Cycle
Current
Cycle
BA2
BA1
BA0
Bank Activate
H
H
BA
Single Bank
Precharge
H
H
BA
X
L
Precharge All
Banks
H
H
X
X
Write
H
H
BA
Write with Autoprecharge
H
H
A14-A11
A10
A9-A0
CS
RAS
CAS
WE
NOTES
L
L
H
H
1,2
X
L
L
H
L
1,2
H
X
L
L
H
L
1
Column
L
Column
L
H
L
L
1,2,3
BA
Column
H
Column
L
H
L
L
1,2,3
Row Address
Read
H
H
BA
Column
L
Column
L
H
L
H
1,2,3
Read with Autoprecharge
H
H
BA
Column
H
Column
L
H
L
H
1,2,3
(Extended)
Mode Register
Set
H
H
BA
L
L
L
L
1,2
No Operation
H
X
X
X
X
X
L
H
H
H
1
Device Deselect
H
X
X
X
X
X
H
X
X
X
1
OP Code
Refresh
H
H
X
X
X
X
L
L
L
H
1
Self Refresh
Entry
H
L
X
X
X
X
L
L
L
H
1,4
Self Refresh Exit
L
H
X
X
X
X
H
X
X
X
L
H
H
H
Power Down
Mode Entry
H
L
X
X
X
X
Power Down
Mode Exit
L
H
X
X
X
X
H
X
X
X
L
H
H
H
H
X
X
X
L
H
H
H
1,4,5
1,6
1,6
Notes:
1. All DDR2 SDRAM commands are defined by states of CS , RAS , CAS , WE and CKE at the rising edge of the clock.
2. Bank addresses BA [2:0] determine which bank is to be operated upon. For (E)MRS BA selects an (Extended) Mode Register.
3. Burst reads or writes at BL = 4 can not be terminated or interrupted. See Burst Interrupt in section 8.5 for details.
4. VREF must be maintained during Self Refresh operation.
5. Self Refresh Exit is asynchronous.
6. The Power Down does not perform any refresh operations. The duration of Power Down Mode is therefore limited by the
refresh requirements outlined in section 8.9.
Publication Release Date: May 08, 2015
Revision: A02
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W972GG8KB
9.2
Clock Enable (CKE) Truth Table for Synchronous Transitions
CKE
CURRENT
STATE2
Previous Cycle
(N-1)
1
COMMAND (N) 3
Current Cycle
(N)
1
ACTION (N) 3
NOTES
RAS , CAS , W E , CS
L
L
X
Maintain Power Down
11, 13, 15
L
H
DESELECT or NOP
Power Down Exit
4, 8, 11, 13
L
L
X
Maintain Power Down
11, 15, 16
L
H
DESELECT or NOP
Self Refresh Exit
4, 5, 9, 16
H
L
DESELECT or NOP
Active Power Down
Entry
4, 8, 10, 11,
13
H
L
DESELECT or NOP
Precharge Power Down
Entry
4, 8, 10, 11,
13
H
L
REFRESH
Self Refresh Entry
6, 9, 11, 13
H
H
Power Down
Self Refresh
Bank(s) Active
All Banks Idle
Refer to the Command Truth Table
7
Notes:
1. CKE (N) is the logic state of CKE at clock edge N; CKE (N–1) was the state of CKE at the previous clock edge.
2. Current state is the state of the DDR2 SDRAM immediately prior to clock edge N.
3. COMMAND (N) is the command registered at clock edge N, and ACTION (N) is a result of COMMAND (N).
4. All states and sequences not shown are illegal or reserved unless explicitly described elsewhere in this document.
5. On Self Refresh Exit DESELECT or NOP commands must be issued on every clock edge occurring during the t XSNR period.
Read commands may be issued only after tXSRD (200 clocks) is satisfied.
6. Self Refresh mode can only be entered from the All Banks Idle state.
7. Must be a legal command as defined in the Command Truth Table.
8. Valid commands for Power Down Entry and Exit are NOP and DESELECT only.
9. Valid commands for Self Refresh Exit are NOP and DESELECT only.
10. Power Down and Self Refresh can not be entered while Read or Write operations, (Extended) Mode Register Set
operations or Precharge operations are in progress. See section 8.9 “Power Down Mode” and section 8.3.7/8.3.8 “Self
Refresh Entry Command/Self Refresh Exit Command” for a detailed list of restrictions.
11. tCKEmin of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the
valid input level the entire time it takes to achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may not
transition from its valid level during the time period of tIS + 2 x tCK + tIH.
12. The state of ODT does not affect the states described in this table. The ODT function is not available during Self Refresh.
See section 8.2.4.
13. The Power Down does not perform any refresh operations. The duration of Power Down Mode is therefore limited by the
refresh requirements outlined in section 8.9.
14. CKE must be maintained HIGH while the SDRAM is in OCD calibration mode.
15. “X” means “don’t care (including floating around VREF)” in Self Refresh and Power Down. However ODT must be driven
high or low in Power Down if the ODT function is enabled (Bit A2 or A6 set to “1” in EMR (1)).
16. VREF must be maintained during Self Refresh operation.
9.3
Data Mask (DM) Truth Table
FUNCTION
DM
DQS
NOTE
Write enable
L
Valid
1
Write inhibit
H
X
1
Note:
1. Used to mask write data, provided coincident with the corresponding data.
Publication Release Date: May 08, 2015
Revision: A02
- 32 -
W972GG8KB
9.4
Function Truth Table
CURRENT
STATE
Idle
Banks
Active
Read
CS
RAS
CAS
WE
ADDRESS
H
X
X
X
X
DSL
NOP or Power down
L
H
H
H
X
NOP
NOP or Power down
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
1
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
1
L
L
H
H
BA, RA
ACT
L
L
H
L
BA, A10
PRE/PREA
Precharge/ Precharge all banks
L
L
L
H
REF/SELF
Auto Refresh or Self Refresh
2
L
L
L
L
Mode/Extended register
accessing
2
X
Op-Code
COMMAND
MRS/EMRS
ACTION
Row activating
H
X
X
X
X
DSL
NOP
L
H
H
H
X
NOP
NOP
L
H
L
H
BA, CA, A10
READ/READA
Begin read
L
H
L
L
BA, CA, A10
WRIT/WRITA
Begin write
L
L
H
H
BA, RA
ACT
L
L
H
L
BA, A10
PRE/PREA
Precharge/ Precharge all banks
L
L
L
H
REF/SELF
ILLEGAL
L
L
L
L
MRS/EMRS
ILLEGAL
X
Op-Code
NOTES
ILLEGAL
1
H
X
X
X
X
DSL
Continue burst to end
L
H
H
H
X
NOP
Continue burst to end
L
H
L
H
BA, CA, A10
READ/READA
Burst interrupt
1,3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
1
L
L
H
H
BA, RA
ACT
ILLEGAL
1
L
L
H
L
BA, A10
PRE/PREA
ILLEGAL
1
L
L
L
H
REF/SELF
ILLEGAL
L
L
L
L
MRS/EMRS
ILLEGAL
H
X
X
X
X
DSL
Continue burst to end
L
H
H
H
X
NOP
Continue burst to end
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
1
L
H
L
L
BA, CA, A10
WRIT/WRITA
Burst interrupt
1,3
L
L
H
H
BA, RA
ACT
ILLEGAL
1
L
L
H
L
BA, A10
PRE/PREA
ILLEGAL
1
L
L
L
H
REF/SELF
ILLEGAL
L
L
L
L
MRS/EMRS
ILLEGAL
X
Op-Code
Write
X
Op-Code
Publication Release Date: May 08, 2015
Revision: A02
- 33 -
W972GG8KB
Function Truth Table, continued
CURRENT
STATE
Read with
Autoprecharge
Write with
Autoprecharge
Precharge
Row
Activating
CS
RAS CAS
WE
ADDRESS
COMMAND
ACTION
X
DSL
Continue burst to end
NOP
Continue burst to end
NOTES
H
X
X
X
L
H
H
H
X
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
1
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
1
L
L
H
H
BA, RA
ACT
ILLEGAL
1
L
L
H
L
BA, A10
PRE/PREA
ILLEGAL
1
L
L
L
H
REF/SELF
ILLEGAL
L
L
L
L
H
X
X
X
L
H
H
X
Op-Code
MRS/EMRS
ILLEGAL
X
DSL
Continue burst to end
H
X
NOP
Continue burst to end
READ/READA
L
H
L
H
BA, CA, A10
ILLEGAL
1
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
1
L
L
H
H
BA, RA
ACT
ILLEGAL
1
L
L
H
L
BA, A10
PRE/PREA
ILLEGAL
1
L
L
L
H
REF/SELF
ILLEGAL
X
Op-Code
MRS/EMRS
L
L
L
L
H
X
X
X
X
DSL
NOP-> Idle after tRP
L
H
H
H
X
NOP
NOP-> Idle after tRP
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
1
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
1
L
L
H
H
BA, RA
ACT
ILLEGAL
1
L
L
H
L
BA, A10
PRE/PREA
NOP-> Idle after tRP
1
L
L
L
H
REF/SELF
ILLEGAL
X
Op-Code
MRS/EMRS
ILLEGAL
L
L
L
L
H
X
X
X
X
DSL
NOP-> Row active after tRCD
L
H
H
H
X
NOP
NOP-> Row active after tRCD
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
1
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
1
L
L
H
H
BA, RA
ACT
ILLEGAL
1
L
L
H
L
BA, A10
PRE/PREA
ILLEGAL
1
L
L
L
H
REF/SELF
ILLEGAL
L
L
L
L
MRS/EMRS
ILLEGAL
X
Op-Code
ILLEGAL
Publication Release Date: May 08, 2015
Revision: A02
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W972GG8KB
Function Truth Table, continued
CURRENT
STATE
Write
Recovering
Write
Recovering
with Autoprecharge
Refreshing
Mode
Register
Accessing
CS
RAS
CAS
WE
ADDRESS
COMMAND
ACTION
H
X
X
X
X
DSL
NOP-> Bank active after tWR
L
H
H
H
X
NOP
NOP-> Bank active after tWR
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
NOTES
1
L
H
L
L
BA, CA, A10
WRIT/WRITA
New write
L
L
H
H
BA, RA
ACT
ILLEGAL
1
L
L
H
L
BA, A10
PRE/PREA
ILLEGAL
1
L
L
L
H
REF/SELF
ILLEGAL
L
L
L
L
MRS/EMRS
ILLEGAL
X
Op-Code
H
X
X
X
X
DSL
NOP-> Precharge after tWR
L
H
H
H
X
NOP
NOP-> Precharge after tWR
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
1
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
1
L
L
H
H
BA, RA
ACT
ILLEGAL
1
L
L
H
L
BA, A10
PRE/PREA
ILLEGAL
1
L
L
L
H
REF/SELF
ILLEGAL
L
L
L
L
MRS/EMRS
ILLEGAL
H
X
X
X
L
H
H
L
H
L
X
Op-Code
X
DSL
NOP-> Idle after tRC
H
X
NOP
NOP-> Idle after tRC
H
BA, CA, A10
READ/READA
ILLEGAL
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
L
L
H
H
BA, RA
ACT
ILLEGAL
L
L
H
L
BA, A10
PRE/PREA
ILLEGAL
L
L
L
H
REF/SELF
ILLEGAL
L
L
L
L
MRS/EMRS
ILLEGAL
H
X
X
X
X
DSL
NOP-> Idle after tMRD
L
H
H
H
X
NOP
NOP-> Idle after tMRD
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
L
L
H
H
BA, RA
ACT
ILLEGAL
L
L
H
L
BA, A10
PRE/PREA
ILLEGAL
L
L
L
H
REF/SELF
ILLEGAL
L
L
L
L
MRS/EMRS
ILLEGAL
X
Op-Code
X
Op-Code
Notes:
1. This command may be issued for other banks, depending on the state of the banks.
2. All banks must be in "IDLE".
3. Read or Write burst interruption is prohibited for burst length of 4 and only allowed for burst length of 8. Burst read/write can
only be interrupted by another read/write with 4 bit burst boundary. Any other case of read/write interrupt is not allowed.
Remark: H = High level, L = Low level, X = High or Low level (Don’t Care), V = Valid data.
Publication Release Date: May 08, 2015
Revision: A02
- 35 -
W972GG8KB
9.5
Simplified Stated Diagram
Initialization
Sequence
OCD
calibration
CKEL
Self Refreshing
SELF
PRE
Setting
MR,EMR (1)
EMR (2)
EMR (3)
CKEH
Idle
All banks
Precharged
(E)MRS
REF
Refreshing
CKEL
ACT
CKEL
CKEH
Precharge
Power
Down
CKEL
Autoomatic Sequence
Activating
Command Sequence
CKEL
CKEL
Active
Power
Down
CKEH
CKEL
Bank
Active
Read
Write
Write
WRITA
Read
Writing
Read
READA
Reading
Write
WRITA
READA
CKEL = CKE LOW, enter Power Down
CKEH = CKE HIGH, exit Power Down
CKEH = CKE HIGH, exit Self Refresh
ACT = Activate
WRITA = Write with Auto-precharge
READA = Read with Auto-precharge
PRE = Precharge
PREA = Precharge All
(E)MRS = (Extended) Mode Register Set
SELF = Enter Self Refresh
REF = Refresh
READA
WRITA
Writing
with
Auto-precharge
Reading
with
Auto-precharge
PRE, PREA
PRE, PREA
PRE, PREA
Precharging
Publication Release Date: May 08, 2015
Revision: A02
- 36 -
W972GG8KB
10. ELECTRICAL CHARACTERISTICS
10.1 Absolute Maximum Ratings
PARAMETER
SYMBOL
RATING
UNIT
NOTES
Voltage on VDD pin relative to VSS
VDD
-1.0 ~ 2.3
V
1, 2
Voltage on VDDQ pin relative to VSS
VDDQ
-0.5 ~ 2.3
V
1, 2
Voltage on VDDL pin relative to VSS
VDDL
-0.5 ~ 2.3
V
1, 2
VIN, VOUT
-0.5 ~ 2.3
V
1, 2
TSTG
-55 ~ 100
°C
1, 3
Voltage on any pin relative to VSS
Storage Temperature
Notes:
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. When VDD and VDDQ and VDDL are less than 500mV; VREF may be equal to or less than 300mV.
3. Storage temperature is the case surface temperature on the center/top side of the DRAM.
10.2 Operating Temperature Condition
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
NOTES
Operating Temperature (for -18/-25/-3)
TCASE
0
85
°C
1, 2, 3
Operating Temperature (for 25I)
TCASE
-40
95
°C
1, 2, 3, 4
Notes:
1. Operating Temperature is the case surface temperature on the center/top side of the DRAM.
2. Supporting 0°C ≤ TCASE ≤ 85°C with full JEDEC AC and DC specifications.
3. Supporting 0°C ≤ TCASE ≤ 85°C and being able to extend to 95°C with doubling Auto Refresh commands in frequency to a
32 mS period ( tREFI = 3.9 µS) and to enter to Self Refresh mode at this high temperature range via A7 “1” on EMR (2).
4. During operation, the DRAM case temperature must be maintained between -40°C ≤ TCASE ≤ 95°C for Industrial parts under
all specification parameters.
10.3 Recommended DC Operating Conditions
SYM.
PARAMETER
MIN.
TYP.
MAX.
UNIT
NOTES
VDD
Supply Voltage
1.7
1.8
1.9
V
1
VDDL
Supply Voltage for DLL
1.7
1.8
1.9
V
5
VDDQ
Supply Voltage for Output
1.7
1.8
1.9
V
1, 5
VREF
Input Reference Voltage
0.49 x VDDQ
0.5 x VDDQ
0.51 x VDDQ
V
2, 3
Termination Voltage (System)
VREF - 0.04
VREF
VREF + 0.04
V
4
VTT
Notes:
1. There is no specific device VDD supply voltage requirement for SSTL_18 compliance. However under all conditions VDDQ
must than or equal to VDD.
2. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of V REF
is expected to be about 0.5 x VDDQ of the transmitting device and VREF is expected to track variations in VDDQ.
3. Peak to peak AC noise on VREF may not exceed ± 2 % VREF(dc).
4. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to
VREF, and device must track VREF of receiving device.
5. VDDQ tracks with VDD, VDDL tracks with VDD. AC parameters are measured with VDD, VDDQ and VDDDL tied together.
Publication Release Date: May 08, 2015
Revision: A02
- 37 -
W972GG8KB
10.4 ODT DC Electrical Characteristics
PARAMETER/CONDITION
SYM.
MIN.
NOM.
MAX.
UNIT
NOTES
Rtt effective impedance value for EMRS(A6,A2)=0,1; 75 Ω
Rtt1(eff)
60
75
90
Ω
1
Rtt effective impedance value for EMRS(A6,A2)=1,0; 150 Ω
Rtt2(eff)
120
150
180
Ω
1
Rtt effective impedance value for EMRS(A6,A2)=1,1; 50 Ω
Rtt3(eff)
40
50
60
Ω
1, 2
ΔVM
-6
+6
%
1
Deviation of VM with respect to VDDQ/2
Notes:
1. Test condition for Rtt measurements.
2. Optional for DDR2-667, mandatory for DDR2-800 and DDR2-1066.
Measurement Definition for Rtt(eff):
Apply VIH (ac) and VIL (ac) to test pin separately, then measure current I(VIH
respectively. VIH (ac), VIL (ac), and VDDQ values defined in SSTL_18.
Rtt(eff) = (VIH(ac) – VIL(ac)) /(I(VIHac) – I(VILac))
Measurement Definition for ΔVM:
Measure voltage (VM) at test pin (midpoint) with no load.
ΔVM = ((2 x Vm / VDDQ) – 1) x 100%
(ac))
and I(VIL
(ac))
10.5 Input DC Logic Level
PARAMETER
SYM.
MIN.
MAX.
UNIT
DC input logic HIGH
VIH(dc)
VREF + 0.125
VDDQ + 0.3
V
DC input logic LOW
VIL(dc)
-0.3
VREF - 0.125
V
10.6 Input AC Logic Level
PARAMETER
SYM.
AC input logic HIGH
AC input logic LOW
-18
-25/25I/-3
UNIT
MIN.
MAX.
MIN.
MAX.
VIH (ac)
VREF + 0.200
VREF + 0.200
VDDQ + VPEAK1
V
VIL (ac)
VREF - 0.200
VREF - 0.200
V
VSSQ - VPEAK
1
Note:
1. Refer to the page 67 sections 10.14.1 and 10.14.2 AC Overshoot/Undershoot specification table for VPEAK value: maximum
peak amplitude allowed for Overshoot/Undershoot.
Publication Release Date: May 08, 2015
Revision: A02
- 38 -
W972GG8KB
10.7 Capacitance
SYM.
PARAMETER
CCK
Input Capacitance , CLK and CLK
CDCK
Input Capacitance delta , CLK and CLK
CI
input Capacitance, all other input-only pins
CDI
Input Capacitance delta, all other input-only pins
CIO
Input/output Capacitance, DQ, DM, DQS,
DQS ,RDQS, RDQS
CDIO
Input/output Capacitance delta, DQ, DM, DQS,
DQS ,RDQS, RDQS
MIN.
MAX.
UNIT
1.0
2.0
pF
0.25
pF
1.0
2.0
pF
0.25
pF
2.5
3.5
pF
0.5
pF
10.8 Leakage and Output Buffer Characteristics
SYM.
PARAMETER
MIN.
MAX.
UNIT
NOTES
IIL
Input Leakage Current
(0V ≤ VIN ≤ VDD)
-2
2
µA
1
IOL
Output Leakage Current
(Output disabled, 0V ≤ VOUT ≤ VDDQ)
-5
5
µA
2
VOH
Minimum Required Output Pull-up
VTT + 0.603
V
VOL
Maximum Required Output Pull-down
VTT - 0.603
V
IOH(dc)
Output Minimum Source DC Current
-13.4
mA
3, 5
IOL(dc)
Output Minimum Sink DC Current
13.4
mA
4, 5
Notes:
1. All other pins not under test = 0 V.
2. DQ, DQS, DQS , RDQS, RDQS are disabled and ODT is turned off.
3. VDDQ = 1.7 V; VOUT = 1.42 V. (VOUT - VDDQ)/IOH must be less than 21 Ω for values of VOUT between VDDQ and VDDQ 0.28V.
4. VDDQ = 1.7 V; VOUT = 0.28V. VOUT/IOL must be less than 21 Ω for values of VOUT between 0 V and 0.28V.
5. The values of IOH(dc) and IOL(dc) are based on the conditions given in Notes 3 and 4. They are used to test drive current
capability to ensure VIHmin plus a noise margin nd VILmax minus a noise margin are delivered to an SSTL_18 receiver.a
Publication Release Date: May 08, 2015
Revision: A02
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W972GG8KB
10.9 DC Characteristics
SYM.
-18
-25/25I
-3
MAX.
MAX.
MAX.
75
70
80
CONDITIONS
UNIT
NOTES
67
mA
1,2,3,4,5,
6
75
72
mA
1,2,3,4,5,
6
10
10
10
mA
1,2,3,4,5,
6,7
50
45
42
mA
1,2,3,4,5,
6
45
40
37
mA
1,2,3,4,5,
6
25
25
25
mA
1,2,3,4,5,
6
16
16
16
mA
1,2,3,4,5,
6,7
55
50
45
mA
1,2,3,4,5,
6
Operating Current - One Bank Active-Precharge
tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD);
IDD0
IDD1
IDD2P
IDD2N
IDD2Q
IDD3PF
IDD3PS
IDD3N
CKE is HIGH, CS is HIGH between valid commands;
Address and control inputs are SWITCHING;
Databus inputs are SWITCHING.
Operating Current - One Bank Active-ReadPrecharge
IOUT = 0 mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD),
tRCD = tRCD(IDD);
CKE is HIGH, CS is HIGH between valid commands;
Address and control inputs are SWITCHING;
Data bus inputs are SWITCHING.
Precharge Power-Down Current
All banks idle;
tCK = tCK(IDD);
CKE is LOW;
Other control and address inputs are STABLE;
Data Bus inputs are FLOATING. (TCASE ≤ 85°C)
Precharge Standby Current
All banks idle;
tCK = tCK(IDD);
CKE is HIGH, CS is HIGH;
Other control and address inputs are SWITCHING;
Data bus inputs are SWITCHING.
Precharge Quiet Standby Current
All banks idle;
tCK = tCK(IDD);
CKE is HIGH, CS is HIGH;
Other control and address inputs are STABLE;
Data bus inputs are FLOATING.
Active Power-Down Current
Fast PDN Exit
All banks open;
MRS(12) = 0
tCK = tCK(IDD);
CKE is LOW;
Other control and address inputs are
Slow PDN Exit
STABLE;
Data bus inputs are FLOATING. MRS(12) = 1
(TCASE ≤ 85°C)
Active Standby Current
All banks open;
tCK = tCK(IDD); tRAS = tRASmax(IDD), tRP = tRP(IDD);
CKE is HIGH, CS is HIGH between valid commands;
Other control and address inputs are SWITCHING;
Data bus inputs are SWITCHING.
Publication Release Date: May 08, 2015
Revision: A02
- 40 -
W972GG8KB
IDD4R
Operating Burst Read Current
All banks open, Continuous burst reads, IOUT = 0 mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK(IDD); tRAS = tRASmax(IDD), tRP = tRP(IDD);
150
125
110
mA
IDD4W
CKE is HIGH, CS is HIGH between valid commands;
Address inputs are SWITCHING;
Data Bus inputs are SWITCHING.
Operating Burst Write Current
All banks open, Continuous burst writes;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK(IDD); tRAS = tRASmax(IDD), tRP = tRP(IDD);
1,2,3,4,5,
6
140
135
120
mA
1,2,3,4,5,
6
160
145
135
mA
1,2,3,4,5,
6
15
15
15
mA
1,2,3,4,5,
6
10
10
10
mA
1,2,3,4,5,
6,7
190
170
150
mA
1,2,3,4,5,
6
IDD5B
IDD5D
IDD6
IDD7
CKE is HIGH, CS is HIGH between valid commands;
Address inputs are SWITCHING;
Data Bus inputs are SWITCHING.
Burst Refresh Current
tCK = tCK(IDD);
Refresh command every tRFC = tRFC(IDD) interval;
CKE is HIGH, CS is HIGH between valid commands;
Other control and address inputs are SWITCHING;
Data bus inputs are SWITCHING.
Distributed Refresh Current
tCK = tCK(IDD);
Refresh command every tREFI = 7.8 μS interval;
CKE is LOW, CS is HIGH between valid commands;
Other control and address inputs are SWITCHING;
Data bus inputs are SWITCHING.
Self Refresh Current
CKE ≤ 0.2 V, external clock off, CLK and CLK at 0 V;
Other control and address inputs are FLOATING;
Data bus inputs are FLOATING. (TCASE ≤ 85°C)
Operating Bank Interleave Read Current
All bank interleaving reads, IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = tRCD(IDD) - 1 x tCK(IDD);
tCK = tCK(IDD), tRC = tRC(IDD), tRRD = tRRD(IDD), tFAW
= tFAW(IDD), tRCD = tRCD(IDD);
CKE is HIGH, CS is HIGH between valid commands;
Address bus inputs are STABLE during deselects;
Data Bus inputs are SWITCHING.
Notes:
1. VDD = 1.8 V ± 0.1V; VDDQ = 1.8 V ± 0.1V.
2. IDD specifications are tested after the device is properly initialized.
3. Input slew rate is specified by AC Parametric Test Condition.
4. IDD parameters are specified with ODT disabled.
5. Data Bus consists of DQ, DM, DQS, DQS , RDQS, RDQS .
6. Definitions for IDD
LOW = Vin ≤ VIL (ac) (max)
HIGH = Vin ≥ VIH (ac) (min)
STABLE = inputs stable at a HIGH or LOW level
FLOATING = inputs at VREF = VDDQ/2
SWITCHING = inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and
control signals, and inputs changing between HIGH and LOW every other data transfer (once per clock)
for DQ signals not including masks or strobes.
7. The following IDD values must be derated (IDD limits increase), when TCASE ≥ 85°C IDD2P must be derated by 20 %;
IDD3P(slow) must be derated by 30 % and IDD6 must be derated by 80 %. (IDD6 will increase by this amount if TCASE < 85°C
and the 2X refresh option is still enabled)
Publication Release Date: May 08, 2015
Revision: A02
- 41 -
W972GG8KB
10.10 IDD Measurement Test Parameters
SPEED GRADE
DDR2-1066
(-18)
DDR2-800
(-25/25I)
DDR2-667
(-3)
Bin(CL-tRCD-tRP)
7-7-7
5-5-5/6-6-6
5-5-5
CL(IDD)
7
5/6
5
tCK
tCK(IDD)
1.875
2.5
3
nS
tRCD(IDD)
13.125
12.5
15
nS
tRP(IDD)
13.125
12.5
15
nS
tRC(IDD)
58.125
57.5
60
nS
tRASmin(IDD)
45
45
45
nS
tRASmax(IDD)
70000
70000
70000
nS
tRRD(IDD)-1KB
7.5
7.5
7.5
nS
tFAW(IDD)-1KB
35
35
37.5
nS
197.5
197.5
197.5
nS
tRFC(IDD)
UNIT
Publication Release Date: May 08, 2015
Revision: A02
- 42 -
W972GG8KB
10.11 AC Characteristics
10.11.1 AC Characteristics and Operating Condition for -18 speed grade
Notes: 1-3 and 45-47 apply to the entire table
SYM.
SPEED GRADE
DDR2-1066 (-18)
Bin(CL-tRCD-tRP)
7-7-7
PARAMETER
MIN.
UNIT25
NOTES
MAX.
Active to Read/Write Command Delay Time
13.125
nS
23
tRP
Precharge to Active Command Period
13.125
nS
23
tRCD
tRC
Active to Ref/Active Command Period
58.125
nS
23
tRAS
Active to Precharge Command Period
45
70000
nS
4,23
tRFC
Auto Refresh to Active/Auto Refresh command period
195
nS
5
0°C ≤ TCASE ≤ 85°C
7.8
μS
5
85°C < TCASE ≤ 95°C
3.9
μS
5,6
2
nCK
3.75
7.5
nS
30,31
tCK(avg) @ CL=5
3
7.5
nS
30,31
tCK(avg) @ CL=6
2.5
7.5
nS
30,31
tCK(avg) @ CL=7
1.875
7.5
nS
30,31
tREFI
Average periodic
refresh Interval
tCCD
CAS to CAS command delay
tCK(avg) @ CL=4
tCK(avg)
Average clock period
tCH(avg)
Average clock high pulse width
0.48
0.52
tCK(avg)
30,31
tCL(avg)
Average clock low pulse width
0.48
0.52
tCK(avg)
30,31
DQ output access time from CLK/ CLK
-350
350
pS
35
tDQSCK
DQS output access time from CLK / CLK
-325
325
pS
35
tDQSQ
DQS-DQ skew for DQS & associated DQ signals
175
pS
13
tAC
tCKE
CKE minimum high and low pulse width
3
nCK
7
tRRD
Active to active command period for 1KB page size
7.5
nS
8,23
tFAW
Four Activate Window for 1KB page size
35
nS
23
tWR
Write recovery time
15
nS
23
WR + tnRP
tDAL
Auto-precharge write recovery + precharge time
nCK
24
tWTR
Internal Write to Read command delay
7.5
nS
9,23
tRTP
Internal Read to Precharge command delay
7.5
nS
4,23
tIS(base)
Address and control input setup time
125
pS
10,26,
40,42,43
tIH(base)
Address and control input hold time
200
pS
11,26,
40,42,43
tIS(ref)
Address and control input setup time
325
pS
10,26,
40,42,43
tIH(ref)
Address and control input hold time
325
pS
11,26,
40,42,43
tCK(avg)
tIPW
tDQSS
Address and control input pulse width for each input
DQS latching rising transitions to associated clock edges
0.6
-0.25
0.25
tCK(avg)
28
tDSS
DQS falling edge to CLK setup time
0.2
tCK(avg)
28
tDSH
DQS falling edge hold time from CLK
0.2
tCK(avg)
28
tDQSH
DQS input high pulse width
0.35
tCK(avg)
tDQSL
DQS input low pulse width
0.35
tCK(avg)
Publication Release Date: May 08, 2015
Revision: A02
- 43 -
W972GG8KB
AC Characteristics and Operating Condition for -18 speed grade, continued
Notes: 1-3 and 45-47 apply to the entire table
SYM.
SPEED GRADE
DDR2-1066 (-18)
Bin(CL-tRCD-tRP)
7-7-7
PARAMETER
MIN.
UNITS25
NOTES
MAX.
tWPRE
Write preamble
0.35
tCK(avg)
tWPST
Write postamble
0.4
0.6
tCK(avg)
12
tRPRE
Read preamble
0.9
1.1
tCK(avg)
14,36
tRPST
Read postamble
0.4
0.6
tCK(avg)
14,37
tDS(base)
DQ and DM input setup time
0
pS
16,27,29,
41,42,44
tDH(base)
DQ and DM input hold time
75
pS
17,27,29,
41,42,44
tDS(ref)
DQ and DM input setup time
200
pS
16,27,29,
41,42,44
tDH(ref)
DQ and DM input hold time
200
pS
17,27,29,
41,42,44
tDIPW
DQ and DM input pulse width for each input
0.35
tCK(avg)
tAC,max
pS
15,35
tAC,min
tAC,max
pS
15,35
2 x tAC,min
tAC,max
pS
15,35
Min. (tCH(abs),
tCL(abs))
pS
32
tHZ
Data-out high-impedance time from CLK/ CLK
tLZ(DQS)
DQS/ DQS -low-impedance time from CLK/ CLK
tLZ(DQ)
DQ low-impedance time from CLK/ CLK
tHP
Clock half pulse width
tQHS
Data hold skew factor
250
pS
33
tQH
DQ/DQS output hold time from DQS
tHP - tQHS
pS
34
tXSNR
Exit Self Refresh to a non-Read command
tRFC + 10
nS
23
tXSRD
Exit Self Refresh to a Read command
200
nCK
Exit precharge power down to any command
3
nCK
tXARD
Exit active power down to Read command
3
nCK
18
tXARDS
Exit active power down to Read command
(slow exit, lower power)
10 - AL
nCK
18,19
tAOND
ODT turn-on delay
2
2
nCK
20
tAC,min
tAC,max + 2.575
nS
20,35
tAC,min + 2
3 x tCK(avg) +
tAC,max+1
nS
tXP
tAON
tAONPD
tAOFD
tAOF
ODT turn-on
ODT turn-on (Power Down mode)
ODT turn-off delay
ODT turn-off
2.5
2.5
nCK
21,39
tAC,min
tAC,max + 0.6
nS
21,38,39
tAC,min + 2
2.5 x tCK(avg) +
tAC,max + 1
nS
nCK
tAOFPD
ODT turn-off (Power Down mode)
tANPD
ODT to power down Entry Latency
4
tAXPD
ODT Power Down Exit Latency
11
nCK
tMRD
Mode Register Set command cycle time
2
nCK
tMOD
MRS command to ODT update delay
0
12
nS
23
tOIT
OCD Drive mode output delay
0
12
nS
23
tIS+tCK(avg)+tIH
nS
22
tDELAY
Minimum time clocks remain ON after CKE
asynchronously drops LOW
Publication Release Date: May 08, 2015
Revision: A02
- 44 -
W972GG8KB
10.11.2 AC Characteristics and Operating Condition for -25/25I/-3 speed grades
Notes: 1-3 and 45-47 apply to the entire table
SYM.
SPEED GRADE
DDR2-800 (-25/25I)
DDR2-667 (-3)
Bin(CL-tRCD-tRP)
5-5-5/6-6-6
5-5-5
PARAMETER
UNITS25 NOTES
MIN.
MAX.
MIN.
MAX.
Active to Read/Write Command Delay Time
12.5
15
nS
23
tRP
Precharge to Active Command Period
12.5
15
nS
23
tRCD
tRC
Active to Ref/Active Command Period
57.5
60
nS
23
tRAS
Active to Precharge Command Period
45
70000
45
70000
nS
4,23
tRFC
Auto Refresh to Active/Auto Refresh command
period
195
195
nS
5
-40°C ≤ TCASE ≤ 85°C
7.8*
7.8
μS
5
tREFI
Average periodic
refresh Interval
0°C ≤ TCASE ≤ 85°C
7.8
7.8
85°C < TCASE ≤ 95°C
3.9
3.9
μS
5,6
2
2
nCK
tCK(avg) @ CL=3
5
8
5
8
nS
30,31
tCK(avg) @ CL=4
3.75
8
3.75
8
nS
30,31
tCK(avg) @ CL=5
2.5
8
3
8
nS
30,31
tCK(avg) @ CL=6
2.5
8
nS
30,31
tCCD
tCK(avg)
CAS to CAS command delay
Average clock period
tCH(avg)
Average clock high pulse width
0.48
0.52
0.48
0.52
tCK(avg)
30,31
tCL(avg)
Average clock low pulse width
0.48
0.52
0.48
0.52
tCK(avg)
30,31
DQ output access time from CLK/ CLK
-400
400
-450
450
pS
35
tDQSCK
DQS output access time from CLK / CLK
-350
350
-400
400
pS
35
tDQSQ
DQS-DQ skew for DQS & associated DQ signals
200
240
pS
13
tAC
tCKE
CKE minimum high and low pulse width
3
3
nCK
7
tRRD
Active to active command period for 1KB page size
7.5
7.5
nS
8,23
tFAW
Four Activate Window for 1KB page size
35
37.5
nS
23
15
15
23
nS
WR + tnRP
WR + tnRP
nCK
24
Internal Write to Read command delay
7.5
7.5
nS
9,23
Internal Read to Precharge command delay
7.5
7.5
nS
4,23
tWR
Write recovery time
tDAL
Auto-precharge write recovery + precharge time
tWTR
tRTP
tIS (base)
Address and control input setup time
tIH (base) Address and control input hold time
175
200
pS
10,26,
40,42,43
250
275
pS
11,26,
40,42,43
tIS (ref)
Address and control input setup time
375
400
pS
10,26,
40,42,43
tIH (ref)
Address and control input hold time
375
400
pS
11,26,
40,42,43
Address and control input pulse width for each input
0.6
0.6
tCK(avg)
-0.25
0.25
-0.25
0.25
tCK(avg)
28
0.2
0.2
tCK(avg)
28
28
tIPW
tDQSS
DQS latching rising transitions to associated clock
edges
tDSS
DQS falling edge to CLK setup time
tDSH
DQS falling edge hold time from CLK
0.2
0.2
tCK(avg)
tDQSH
DQS input high pulse width
0.35
0.35
tCK(avg)
tDQSL
DQS input low pulse width
0.35
0.35
tCK(avg)
* -40°C ≤ TCASE ≤ 85°C is for 25I grade only.
Publication Release Date: May 08, 2015
Revision: A02
- 45 -
W972GG8KB
AC Characteristics and Operating Condition for -25/25I/-3 speed grades, continued
Notes: 1-3 and 45-47 apply to the entire table
SYM.
SPEED GRADE
DDR2-800 (-25/25I)
DDR2-667 (-3)
Bin(CL-tRCD-tRP)
5-5-5/6-6-6
5-5-5
PARAMETER
MIN.
MAX.
MIN.
UNITS25 NOTES
MAX.
tWPRE
Write preamble
0.35
0.35
tCK(avg)
tWPST
Write postamble
0.4
0.6
0.4
0.6
tCK(avg)
12
tRPRE
Read preamble
0.9
1.1
0.9
1.1
tCK(avg)
14,36
tRPST
Read postamble
0.4
0.6
0.4
0.6
tCK(avg)
14,37
tDS(base) DQ and DM input setup time
50
100
pS
16,27,29,
41,42,44
tDH(base) DQ and DM input hold time
125
175
pS
17,27,29,
41,42,44
tDS(ref)
DQ and DM input setup time
250
300
pS
16,27,29,
41,42,44
tDH(ref)
DQ and DM input hold time
250
300
pS
17,27,29,
41,42,44
tDIPW
DQ and DM input pulse width for each
input
0.35
0.35
tCK(avg)
tAC,max
tAC,max
pS
15,35
tAC,min
tAC,max
tAC,min
tAC,max
pS
15,35
2 x tAC,min
tAC,max
2 x tAC,min
tAC,max
pS
15,35
pS
32
tHZ
tLZ(DQS)
Data-out high-impedance time from CLK/
CLK
DQS/ DQS -low-impedance time from
CLK/ CLK
tLZ(DQ)
DQ low-impedance time from CLK/ CLK
Min.
Min.
(tCH(abs),
tCL(abs))
(tCH(abs),
tCL(abs))
tHP
Clock half pulse width
tQHS
Data hold skew factor
300
340
pS
33
tQH
DQ/DQS output hold time from DQS
tHP - tQHS
tHP - tQHS
pS
34
tXSNR
Exit Self Refresh to a non-Read command
tRFC + 10
tRFC + 10
nS
23
tXSRD
Exit Self Refresh to a Read command
200
200
nCK
Exit precharge power down to any
command
2
2
nCK
tXARD
Exit active power down to Read command
2
2
nCK
18
tXARDS
Exit active power down to Read command
(slow exit, lower power)
8 - AL
7 - AL
nCK
18,19
tAOND
ODT turn-on delay
tXP
tAON
tAONPD
tAOFD
tAOF
ODT turn-on
ODT turn-on (Power Down mode)
ODT turn-off delay
ODT turn-off
2
2
2
2
nCK
20
tAC,min
tAC,max + 0.7
tAC,min
tAC,max + 0.7
nS
20,35
2 x tCK(avg) +
2 x tCK(avg) +
tAC,min + 2
tAC,max + 1
tAC,max + 1
nS
tAC,min + 2
2.5
2.5
2.5
2.5
nCK
21,39
tAC,min
tAC,max + 0.6
tAC,min
tAC,max + 0.6
nS
21,38,39
2.5 x tCK(avg)
2.5 x tCK(avg)
tAC,min + 2
+ tAC,max + 1
+ tAC,max + 1
nS
tAOFPD
ODT turn-off (Power Down mode)
tAC,min + 2
tANPD
ODT to power down Entry Latency
3
tAXPD
ODT Power Down Exit Latency
8
3
8
nCK
nCK
tMRD
Mode Register Set command cycle time
2
2
nCK
tMOD
MRS command to ODT update delay
0
12
0
12
nS
23
tOIT
OCD Drive mode output delay
0
12
0
12
nS
23
tIS+tCK(avg)+
tIH
nS
22
tDELAY
Minimum time clocks remain ON after
CKE asynchronously drops LOW
tIS+tCK(avg)+
tIH
Publication Release Date: May 08, 2015
Revision: A02
- 46 -
W972GG8KB
Notes:
1. All voltages are referenced to VSS.
2. Tests for AC timing, IDD, and electrical AC and DC characteristics may be conducted at nominal reference/supply voltage
levels, but the related specifications and device operation are guaranteed for the full voltage range specified. ODT is
disabled for all measurements that are not ODT-specific.
3. AC timing reference load:
VDDQ
DQ
DUT
Output
VTT = VDDQ/2
DQS, DQS
RDQS, RDQS
Figure 16
Timing
reference
point
25Ω
– AC timing reference load
4. This is a minimum requirement. Minimum read to precharge timing is AL + BL / 2 provided that the tRTP and tRAS(min)
have been satisfied.
5. If refresh timing is violated, data corruption may occur and the data must be re-written with valid data before a valid READ
can be executed.
6. This is an optional feature. For detailed information, please refer to “Operating Temperature Condition” section 10.2 in
this data sheet.
7. tCKE min of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the
valid input level the entire time it takes to achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may not
transition from its valid level during the time period of tIS + 2 x tCK + tIH.
8. A minimum of two clocks (2 * nCK) is required irrespective of operating frequency.
9. tWTR is at least two clocks (2 * nCK) independent of operation frequency.
10. There are two sets of values listed for Command/Address input setup time: tIS(base) and tIS(ref). The tIS(ref) value (for
reference only) is equivalent to the baseline value of tIS(base) at VREF when the slew rate is 1.0 V/nS. The baseline value
tIS(base) is the JEDEC defined value, referenced from the input signal crossing at the VIH(ac) level for a rising signal and
VIL(ac) for a falling signal applied to the device under test. See Figure 17. If the Command/Address slew rate is not equal to
1.0 V/nS, then the baseline values must be derated by adding the values from table of tIS/tIH derating values for DDR2-667,
DDR2-800 and DDR2-1066 (page 55).
CLK
CLK
tIS(base) tIH(base)
tIS(base) tIH(base)
Logic levels
VDDQ
VIH(ac) min
VIH(dc) min
VREF(dc)
VIL(dc) max
VIL(ac) max
VSS
VREF levels
tIS(ref)
Figure 17
tIH(ref)
tIS(ref)
tIH(ref)
– Differential input waveform timing – tIS and tIH
Publication Release Date: May 08, 2015
Revision: A02
- 47 -
W972GG8KB
11. There are two sets of values listed for Command/Address input hold time: tIH(base) and tIH(ref). The tIH(ref) value (for
reference only) is equivalent to the baseline value of tIH(base) at VREF when the slew rate is 1.0 V/nS. The baseline value
tIH(base) is the JEDEC defined value, referenced from the input signal crossing at the VIL(dc) level for a rising signal and
VIH(dc) for a falling signal applied to the device under test. See Figure 17. If the Command/Address slew rate is not equal to
1.0 V/nS, then the baseline values must be derated by adding the values from table tIS/tIH derating values for DDR2-667,
DDR2-800 and DDR2-1066 (page 55).
12. The maximum limit for the tWPST parameter is not a device limit. The device operates with a greater value for this
parameter, but system performance (bus turnaround) will degrades accordingly.
13. tDQSQ: Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as
well as output Slew Rate mismatch between DQS / DQS and associated DQ in any given cycle.
14. tRPST end point and tRPRE begin point are not referenced to a specific voltage level but specify when the device output is
no longer driving (tRPST), or begins driving (tRPRE). Figure 18 shows a method to calculate these points when the device
is no longer driving (tRPST), or begins driving (tRPRE) by measuring the signal at two different voltages. The actual voltage
measurement points are not critical as long as the calculation is consistent.
15. tHZ and tLZ transitions occur in the same access time as valid data transitions. These parameters are referenced to a
specific voltage level which specifies when the device output is no longer driving (tHZ), or begins driving (tLZ). Figure 18
shows a method to calculate the point when device is no longer driving (tHZ), or begins driving (tLZ) by measuring the
signal at two different voltages. The actual voltage measurement points are not critical as long as the calculation is
consistent. tLZ(DQ) refers to tLZ of the DQ’s and tLZ(DQS) refers to tLZ of the (DQS, DQS , RDQS, RDQS ) each treated
as single-ended signal.
VOH - x mV
VTT + 2x mV
VOH - 2x mV
VTT + x mV
tHZ
tLZ
tRPST end point
tRPRE begin point
VOL + 2x mV
VTT - x mV
VOL + x mV
VTT - 2x mV
T1 T2
T1 T2
tHZ,tRPST end point = 2 x T1 - T2
tLZ,tRPRE begin point = 2 x T1 - T2
Figure 18 – Method for calculating transitions and endpoints
16. Input waveform timing tDS with differential data strobe enabled MR[bit10]=0. There are two sets of values listed for DQ and
DM input setup time: tDS(base) and tDS(ref). The tDS(ref) value (for reference only) is equivalent to the baseline value
tDS(base) at VREF when the slew rate is 2.0 V/nS, differentially. The baseline value tDS(base) is the JEDEC defined value,
referenced from the input signal crossing at the VIH(ac) level to the differential data strobe crosspoint for a rising signal, and
from the input signal crossing at the VIL(ac) level to the differential data strobe crosspoint for a falling signal applied to the
device under test. DQS, DQS signals must be monotonic between VIL(dc)max and VIH(dc)min. See Figure 19. If the
differential DQS slew rate is not equal to 2.0 V/nS, then the baseline values must be derated by adding the values from
table of DDR2-667, DDR2-800 and DDR2-1066 tDS/tDH derating with differential data strobe (page 60).
17. Input waveform timing tDH with differential data strobe enabled MR[bit10]=0. There are two sets of values listed for DQ and
DM input hold time: tDH(base) and tDH(ref). The tDH(ref) value (for reference only) is equivalent to the baseline value
tDH(base) at VREF when the slew rate is 2.0 V/nS, differentially. The baseline value tDH(base) is the JEDEC defined value,
referenced from the differential data strobe crosspoint to the input signal crossing at the VIH(dc) level for a falling signal and
from the differential data strobe crosspoint to the input signal crossing at the VIL(dc) level for a rising signal applied to the
device under test. DQS, DQS signals must be monotonic between VIL(dc)max and VIH(dc)min. See Figure 19. If the
differential DQS slew rate is not equal to 2.0 V/nS, then the baseline values must be derated by adding the values from
table of DDR2-667, DDR2-800 and DDR2-1066 tDS/tDH derating with differential data strobe (page 60).
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DQS
DQS
tDS(base) tDH(base)
tDS(base) tDH(base)
Logic levels
VDDQ
VIH(ac) min
VIH(dc) min
VREF(dc)
VIL(dc) max
VIL(ac) max
VSS
VREF levels
tDS(ref)
Figure 19
tDH(ref)
tDS(ref)
tDH(ref)
– Differential input waveform timing – tDS and tDH
18. User can choose which active power down exit timing to use via MRS (bit 12). tXARD is expected to be used for fast active
power down exit timing. tXARDS is expected to be used for slow active power down exit timing.
19. AL = Additive Latency.
20. ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time
max is when the ODT resistance is fully on. Both are measure from tAOND, which is interpreted differently per speed bin.
For DDR2-667/800/1066, tAOND is 2 clock cycles after the clock edge that registered a first ODT HIGH counting the actual
input clock edges.
21. ODT turn off time min is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in high
impedance. Both are measured from tAOFD, which is interpreted as 0.5 x tCK(avg) [nS] after the second trailing clock edge
counting from the clock edge that registered a first ODT LOW and by counting the actual input clock edges.
For DDR2-667/800: If tCK(avg) = 3 nS is assumed, tAOFD is 1.5 nS (= 0.5 x 3 nS) after the second trailing clock
edge counting from the clock edge that registered a first ODT LOW and by counting the actual input clock edges.
For DDR2-1066: tAOFD is 0.9375 [nS] (= 0.5 x 1.875 [nS]) after the second trailing clock edge counting from the
clock edge that registered a first ODT LOW and by counting the actual input clock edges.
22. The clock frequency is allowed to change during Self Refresh mode or precharge power-down mode. In case of clock
frequency change during precharge power-down, a specific procedure is required as described in section 8.10.
23. For these parameters, the DDR2 SDRAM device is characterized and verified to support tnPARAM = RU{tPARAM /
tCK(avg)}, which is in clock cycles, assuming all input clock jitter specifications are satisfied.
Examples:
The device will support tnRP = RU{tRP / tCK(avg)}, which is in clock cycles, if all input clock jitter specifications are
met. This means: For DDR2-667 5-5-5, of which tRP = 15nS, the device will support tnRP = RU{tRP / tCK(avg)} = 5,
i.e. as long as the input clock jitter specifications are met, Precharge command at Tm and Active command at Tm+5
is valid even if (Tm+5 - Tm) is less than 15nS due to input clock jitter. For DDR2-1066 7-7-7, of which tRP = 13.125
nS, the device will support tnRP = RU{tRP / tCK(avg)} = 7, i.e. as long as the input clock jitter specifications are met,
Precharge command at Tm and Active command at Tm+7 is valid even if (Tm+7 - Tm) is less than 13.125 nS due to
input clock jitter.
24. tDAL [nCK] = WR [nCK] + tnRP [nCK] = WR + RU {tRP [pS] / tCK(avg) [pS] }, where WR is the value programmed in the
mode register set and RU stands for round up.
Example:
For DDR2-1066 7-7-7 at tCK(avg) = 1.875 nS with WR programmed to 8 nCK, tDAL = 8 + RU{13.125 nS / 1.875
nS} [nCK] = 8 + 7 [nCK] = 15 [nCK].
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25. New units, ‘tCK(avg)’ and ‘nCK’, are introduced in DDR2-667, DDR2-800 and DDR2-1066.
Unit ‘tCK(avg)’ represents the actual tCK(avg) of the input clock under operation.
Unit ‘nCK’ represents one clock cycle of the input clock, counting the actual clock edges.
Examples:
For DDR2-667/800: tXP = 2 [nCK] means; if Power Down exit is registered at Tm, an Active command may be
registered at Tm+2, even if (Tm+2 - Tm) is 2 x tCK(avg) + tERR(2per),min.
For DDR2-1066: tXP = 3 [nCK] means; if Power Down exit is registered at Tm, an Active command may be
registered at Tm+3, even if (Tm+3 - Tm) is 3 x tCK(avg) + tERR(3per),min.
26. These parameters are measured from a command/address signal (CKE, CS , RAS , CAS , WE , ODT, BA0, A0, A1, etc.)
transition edge to its respective clock signal (CLK/ CLK ) crossing. The spec values are not affected by the amount of clock
jitter applied (i.e. tJIT(per), tJIT(cc), etc.), as the setup and hold are relative to the clock signal crossing that latches the
command/address. That is, these parameters should be met whether clock jitter is present or not.
27. If tDS or tDH is violated, data corruption may occur and the data must be re-written with valid data before a valid READ can
be executed.
28. These parameters are measured from a data strobe signal (DQS, DQS , RDQS, RDQS ) crossing to its respective clock
signal (CLK/ CLK ) crossing. The spec values are not affected by the amount of clock jitter applied (i.e. tJIT(per), tJIT(cc),
etc.), as these are relative to the clock signal crossing. That is, these parameters should be met whether clock jitter is
present or not.
29. These parameters are measured from a data signal (DM, DQ0, DQ1, etc.) transition edge to its respective data strobe
signal (DQS, DQS , RDQS, RDQS ) crossing.
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30. Input clock jitter spec parameter. These parameters and the ones in the table below are referred to as 'input clock jitter spec
parameters'. The jitter specified is a random jitter meeting a Gaussian distribution.
Input clock-Jitter specifications parameters for DDR2-667, DDR2-800 and DDR2-1066
PARAMETER
DDR2-667
SYMBOL
Clock period jitter
Clock period jitter during DLL locking period
Cycle to cycle clock period
DDR2-800
DDR2-1066
UNIT
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
tJIT(per)
-125
125
-100
100
-90
90
pS
tJIT(per,lck)
-100
100
-80
80
-80
80
pS
tJIT(cc)
-250
250
-200
200
-180
180
pS
Cycle to cycle clock period jitter during DLL
locking period
tJIT(cc,lck)
-200
200
-160
160
-160
160
pS
Cumulative error across 2 cycles
tERR(2per)
-175
175
-150
150
-132
132
pS
Cumulative error across 3 cycles
tERR(3per)
-225
225
-175
175
-157
157
pS
Cumulative error across 4 cycles
tERR(4per)
-250
250
-200
200
-175
175
pS
Cumulative error across 5 cycles
tERR(5per)
-250
250
-200
200
-188
188
pS
Cumulative error across n cycles,
n = 6 ... 10, inclusive
tERR(6-10per)
-350
350
-300
300
-250
250
pS
Cumulative error across n cycles,
n = 11 ... 50, inclusive
tERR(11-50per)
-450
450
-450
450
-425
425
pS
tJIT(duty)
-125
125
-100
100
-75
75
pS
Duty cycle jitter
Definitions:
-
tCK(avg)
tCK(avg) is calculated as the average clock period across any consecutive 200 cycle window.
N
tCK(avg) = tCK j / N
j 1
where
-
N = 200
tCH(avg) and tCL(avg)
tCH(avg) is defined as the average HIGH pulse width, as calculated across any consecutive 200 HIGH pulses.
N
tCH(avg) = tCH j / (N × tCK(avg))
j 1
where
N = 200
tCL(avg) is defined as the average LOW pulse width, as calculated across any consecutive 200 LOW pulses.
N
tCL(avg) = tCL j / (N × tCK(avg))
j 1
where
N = 200
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-
tJIT(duty)
tJIT(duty) is defined as the cumulative set of tCH jitter and tCL jitter. tCH jitter is the largest deviation of any single tCH from
tCH(avg). tCL jitter is the largest deviation of any single tCL from tCL(avg).
tJIT(duty) = Min/max of {tJIT(CH), tJIT(CL)}
where,
tJIT(CH) = {tCHi- tCH(avg) where i=1 to 200}
tJIT(CL) = {tCLi- tCL(avg) where i=1 to 200}
-
tJIT(per), tJIT(per,lck)
tJIT(per) is defined as the largest deviation of any single tCK from tCK(avg).
tJIT(per) = Min/max of {tCKi- tCK(avg) where i=1 to 200}
tJIT(per) defines the single period jitter when the DLL is already locked.
tJIT(per,lck) uses the same definition for single period jitter, during the DLL locking period only.
tJIT(per) and tJIT(per,lck) are not guaranteed through final production testing.
-
tJIT(cc), tJIT(cc,lck)
tJIT(cc) is defined as the difference in clock period between two consecutive clock cycles:
tJIT(cc) = Max of |tCKi+1 – tCKi|
tJIT(cc) defines the cycle to cycle jitter when the DLL is already locked.
tJIT(cc,lck) uses the same definition for cycle to cycle jitter, during the DLL locking period only.
tJIT(cc) and tJIT(cc,lck) are not guaranteed through final production testing.
-
tERR(2per), tERR (3per), tERR (4per), tERR (5per), tERR (6-10per) and tERR (11-50per)
tERR is defined as the cumulative error across multiple consecutive cycles from tCK(avg).
i n 1
tERR(nper) = tCK j –n × tCK(avg)
j 1
n=2
n=3
n=4
Where
n=5
6 n 10
11 n 50
for
tERR(2per)
for
tERR(3per)
for
tERR(4per)
for
tERR(5per)
for
tERR(6 – 10per)
for
tERR(11 – 50per)
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31. These parameters are specified per their average values, however it is understood that the following relationship between
the average timing and the absolute instantaneous timing holds at all times. (Min and max of SPEC values are to be used
for calculations in the table below.)
PARAMETER
SYMBOL
MIN
MAX
UNIT
Absolute clock period
tCK(abs)
tCK(avg),min + tJIT(per),min
tCK(avg),max + tJIT(per),max
pS
Absolute clock HIGH pulse width
tCH(abs)
tCH(avg),min x tCK(avg),min +
tJIT(duty),min
tCH(avg),max x tCK(avg),max +
tJIT(duty),max
pS
Absolute clock LOW pulse width
tCL(abs)
tCL(avg),min x tCK(avg),min +
tJIT(duty),min
tCL(avg),max x tCK(avg),max +
tJIT(duty),max
pS
Examples: 1) For DDR2-667, tCH(abs),min = ( 0.48 x 3000 pS ) - 125 pS = 1315 pS
2) For DDR2-1066, tCH(abs),min = ( 0.48 x 1875 pS ) - 75 pS = 825 pS
32. tHP is the minimum of the absolute half period of the actual input clock. tHP is an input parameter but not an input
specification parameter. It is used in conjunction with tQHS to derive the DRAM output timing tQH. The value to be used for
tQH calculation is determined by the following equation;
tHP = Min ( tCH(abs), tCL(abs) ),
where,
tCH(abs) is the minimum of the actual instantaneous clock HIGH time;
tCL(abs) is the minimum of the actual instantaneous clock LOW time;
33. tQHS accounts for:
1) The pulse duration distortion of on-chip clock circuits, which represents how well the actual tHP at the input is
transferred to the output; and
2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the next transition,
both of which are independent of each other, due to data pin skew, output pattern effects, and p-channel to nchannel variation of the output drivers
34. tQH = tHP – tQHS, where:
tHP is the minimum of the absolute half period of the actual input clock; and
tQHS is the specification value under the max column.
{The less half-pulse width distortion present, the larger the tQH value is; and the larger the valid data eye will be.}
Examples:
1) If the system provides tHP of 1315 pS into a DDR2-667 SDRAM, the DRAM provides tQH of 975 pS minimum.
2) If the system provides tHP of 1420 pS into a DDR2-667 SDRAM, the DRAM provides tQH of 1080 pS minimum.
3) If the system provides tHP of 825 pS into a DDR2-1066 SDRAM, the DRAM provides tQH of 575 pS minimum.
4) If the system provides tHP of 900 pS into a DDR2-1066 SDRAM, the DRAM provides tQH of 650 pS minimum.
35. When the device is operated with input clock jitter, this parameter needs to be derated by the actual tERR(6-10per) of the
input clock. (output deratings are relative to the SDRAM input clock.)
Examples:
1) If the measured jitter into a DDR2-667 SDRAM has tERR(6-10per),min = - 272 pS and tERR(6-10per),max = +
293 pS, then tDQSCK,min(derated) = tDQSCK,min - tERR(6-10per),max = - 400 pS - 293 pS = - 693 pS and
tDQSCK,max(derated) = tDQSCK,max - tERR(6-10per),min = 400 pS + 272 pS = + 672 pS.
Similarly, tLZ(DQ) for DDR2-667 derates to tLZ(DQ),min(derated) = - 900 pS - 293 pS = - 1193 pS and
tLZ(DQ),max(derated) = 450 pS + 272 pS = + 722 pS. (Caution on the min/max usage!)
2) If the measured jitter into a DDR2-1066 SDRAM has tERR(6-10per),min = - 202 pS and tERR(6-10per),max = +
223 pS, then tDQSCK,min(derated) = tDQSCK,min - tERR(6-10per),max = - 300 pS - 223 pS = - 523 pS and
tDQSCK,max(derated) = tDQSCK,max - tERR(6-10per),min = 300 pS + 202 pS = + 502 pS.
Similarly, tLZ(DQ) for DDR2-1066 derates to tLZ(DQ),min(derated) = - 700 pS - 223 pS = - 923 pS and
tLZ(DQ),max(derated) = 350 pS + 202 pS = + 552 pS. (Caution on the min/max usage!)
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36. When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT(per) of the input
clock. (output deratings are relative to the SDRAM input clock.)
Examples:
1) If the measured jitter into a DDR2-667 SDRAM has tJIT(per),min = - 72 pS and tJIT(per),max = + 93 pS, then
tRPRE,min(derated) = tRPRE,min + tJIT(per),min = 0.9 x tCK(avg) - 72 pS = + 2178 pS and tRPRE,max(derated) =
tRPRE,max + tJIT(per),max = 1.1 x tCK(avg) + 93 pS = + 2843 pS. (Caution on the min/max usage!)
2) If the measured jitter into a DDR2-1066 SDRAM has tJIT(per),min = - 72 pS and tJIT(per),max = + 63 pS, then
tRPRE,min(derated) = tRPRE,min + tJIT(per),min = 0.9 x tCK(avg) - 72 pS = + 1615.5 pS and tRPRE,max(derated)
= tRPRE,max + tJIT(per),max = 1.1 x tCK(avg) + 63 pS = + 2125.5 pS. (Caution on the min/max usage!)
37. When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT(duty) of the input
clock. (output deratings are relative to the SDRAM input clock.)
Examples:
1) If the measured jitter into a DDR2-667 SDRAM has tJIT(duty),min = - 72 pS and tJIT(duty),max = + 93 pS, then
tRPST,min(derated) = tRPST,min + tJIT(duty),min = 0.4 x tCK(avg) - 72 pS = + 928 pS and tRPST,max(derated) =
tRPST,max + tJIT(duty),max = 0.6 x tCK(avg) + 93 pS = + 1592 pS. (Caution on the min/max usage!)
2) If the measured jitter into a DDR2-1066 SDRAM has tJIT(duty),min = - 72 pS and tJIT(duty),max = + 63 pS, then
tRPST,min(derated) = tRPST,min + tJIT(duty),min = 0.4 x tCK(avg) - 72 pS = + 678 pS and tRPST,max(derated) =
tRPST,max + tJIT(duty),max = 0.6 x tCK(avg) + 63 pS = + 1188 pS. (Caution on the min/max usage!)
38. When the device is operated with input clock jitter, this parameter needs to be derated by { -tJIT(duty),max - tERR(610per),max } and { - tJIT(duty),min - tERR(6-10per),min } of the actual input clock. (output deratings are relative to the
SDRAM input clock.)
Examples:
1) If the measured jitter into a DDR2-667 SDRAM has tERR(6-10per),min = - 272 pS, tERR(6-10per),max = + 293
pS, tJIT(duty),min = - 106 pS and tJIT(duty),max = + 94 pS, then tAOF,min(derated) = tAOF,min + { - tJIT(duty),max
- tERR(6-10per),max } = - 450 pS + { - 94 pS - 293 pS} = - 837 pS and tAOF,max(derated) = tAOF,max + { tJIT(duty),min - tERR(6-10per),min } = 1050 pS + { 106 pS + 272 pS } = + 1428 pS. (Caution on the min/max
usage!)
2) If the measured jitter into a DDR2-1066 SDRAM has tERR(6-10per),min = - 202 pS, tERR(6-10per),max = + 223
pS, tJIT(duty),min = - 66 pS and tJIT(duty),max = + 74 pS, then tAOF,min(derated) = tAOF,min + { - tJIT(duty),max tERR(6-10per),max } = - 350 pS + { - 74 pS - 223 pS} = - 647 pS and tAOF,max(derated) = tAOF,max + { tJIT(duty),min - tERR(6-10per),min } = 950 pS + { 66 pS + 202 pS } = + 1218 pS. (Caution on the min/max usage!)
39. For tAOFD of DDR2-667/800/1066, the 1/2 clock of nCK in the 2.5 x nCK assumes a tCH(avg), average input clock HIGH
pulse width of 0.5 relative to tCK(avg). tAOF,min and tAOF,max should each be derated by the same amount as the actual
amount of tCH(avg) offset present at the DRAM input with respect to 0.5.
Example:
If an input clock has a worst case tCH(avg) of 0.48, the tAOF,min should be derated by subtracting 0.02 x tCK(avg)
from it, whereas if an input clock has a worst case tCH(avg) of 0.52, the tAOF,max should be derated by adding
0.02 x tCK(avg) to it. Therefore, we have;
tAOF,min(derated) = tAC,min - [0.5 - Min(0.5, tCH(avg),min)] x tCK(avg)
tAOF,max(derated) = tAC,max + 0.6 + [Max(0.5, tCH(avg),max) - 0.5] x tCK(avg)
or
tAOF,min(derated) = Min(tAC,min, tAC,min - [0.5 - tCH(avg),min] x tCK(avg))
tAOF,max(derated) = 0.6 + Max(tAC,max, tAC,max + [tCH(avg),max - 0.5] x tCK(avg))
where tCH(avg),min and tCH(avg),max are the minimum and maximum of tCH(avg) actually measured at the
DRAM input balls.
Note that these deratings are in addition to the tAOF derating per input clock jitter, i.e. tJIT(duty) and tERR(6-10per). However
tAC values used in the equations shown above are from the timing parameter table and are not derated.
Thus the final derated values for tAOF are;
tAOF,min(derated_final) = tAOF,min(derated) + { - tJIT(duty),max - tERR(6-10per),max }
tAOF,max(derated_final) = tAOF,max(derated) + { - tJIT(duty),min - tERR(6-10per),min }
40. Timings are specified with command/address input slew rate of 1.0 V/nS.
41. Timings are specified with DQs and DM input slew rate of 1.0V/nS.
42. Timings are specified with CLK/ CLK differential slew rate of 2.0 V/nS. Timings are guaranteed for DQS signals with a
differential slew rate of 2.0 V/nS in differential strobe mode.
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43. tIS and tIH (input setup and hold) derating.
tIS/tIH derating values for DDR2-667, DDR2-800 and DDR2-1066
ΔtIS and ΔtIH Derating Values for DDR2-667, DDR2-800 and DDR2-1066
Command/
Address
Slew Rate
(V/nS)
CLK/ CLK Differential Slew Rate
2.0 V/nS
1.5 V/nS
1.0 V/nS
Unit
ΔtIS
ΔtIH
ΔtIS
ΔtIH
ΔtIS
ΔtIH
4.0
+150
+94
+180
+124
+210
+154
pS
3.5
+143
+89
+173
+119
+203
+149
pS
3.0
+133
+83
+163
+113
+193
+143
pS
2.5
+120
+75
+150
+105
+180
+135
pS
2.0
+100
+45
+130
+75
+160
+105
pS
1.5
+67
+21
+97
+51
+127
+81
pS
1.0
0
0
+30
+30
+60
+60
pS
0.9
-5
-14
+25
+16
+55
+46
pS
0.8
-13
-31
+17
-1
+47
+29
pS
0.7
-22
-54
+8
-24
+38
+6
pS
0.6
-34
-83
-4
-53
+26
-23
pS
0.5
-60
-125
-30
-95
0
-65
pS
0.4
-100
-188
-70
-158
-40
-128
pS
0.3
-168
-292
-138
-262
-108
-232
pS
0.25
-200
-375
-170
-345
-140
-315
pS
0.2
-325
-500
-295
-470
-265
-440
pS
0.15
-517
-708
-487
-678
-457
-648
pS
0.1
-1000
-1125
-970
-1095
-940
-1065
pS
For all input signals the total tIS (setup time) and tIH (hold time) required is calculated by adding the data sheet tIS(base) and
tIH(base) value to the ΔtIS and ΔtIH derating value respectively. Example: tIS (total setup time) = tIS(base) + ΔtIS.
Setup (tIS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VREF(dc) and the first
crossing of VIH(ac)min. Setup (tIS) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of
VREF(dc) and the first crossing of VIL(ac)max. If the actual signal is always earlier than the nominal slew rate line between
shaded ‘VREF(dc) to AC region’, use nominal slew rate for derating value. See Figure 20 Illustration of nominal slew rate for tIS.
If the actual signal is later than the nominal slew rate line anywhere between shaded ‘VREF(dc) to AC region’, the slew rate of a
tangent line to the actual signal from the AC level to DC level is used for derating value. See Figure 21 Illustration of tangent line
for tIS.
Hold (tIH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VIL(dc)max and the first
crossing of VREF(dc). Hold (tIH) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of
VIH(dc)min and the first crossing of VREF(dc). If the actual signal is always later than the nominal slew rate line between
shaded ‘DC to VREF(dc) region’, use nominal slew rate for derating value. See Figure 22 Illustration of nominal slew rate for tIH.
If the actual signal is earlier than the nominal slew rate line anywhere between shaded ‘DC to VREF(dc) region’, the slew rate of
a tangent line to the actual signal from the DC level to VREF(dc) level is used for derating value. See Figure 23 Illustration of
tangent line for tIH.
Although for slow slew rates the total setup time might be negative (i.e. a valid input signal will not have reached VIH/IL(ac) at
the time of the rising clock transition) a valid input signal is still required to complete the transition and reach VIH/IL(ac).
For slew rates in between the values listed in above tIS/tIH derating values for DDR2-667, DDR2-800 and DDR2-1066 table, the
derating values may obtained by linear interpolation.
These values are typically not subject to production test. They are verified by design and characterization.
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CLK
CLK
tIS
tIH
tIS
tIH
VDDQ
VIH(ac)min
VREF to AC
region
VIH(dc)min
nominal
slew rate
VREF(dc)
nominal
slew rate
VIL(dc)max
VREF to AC
region
VIL(ac)max
VSS
ΔTF
Setup Slew Rate
=
Falling Signal
ΔTR
VREF(dc) - VIL(ac)max
ΔTF
Setup Slew Rate
Rising Signal =
VIH(ac)min - VREF(dc)
ΔTR
Figure 20 – Illustration of nominal slew rate for tIS
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CLK
CLK
tIS
tIH
tIS
tIH
VDDQ
nominal
line
VIH(ac)min
VREF to AC
region
VIH(dc)min
tangent
line
VREF(dc)
tangent
line
VIL(dc)max
VREF to AC
region
VIL(ac)max
nominal
line
ΔTR
VSS
ΔTF
Setup Slew Rate
Rising Signal =
tangent line[VIH(ac)min - VREF(dc)]
ΔTR
Setup Slew Rate tangent line[VREF(dc) - VIL(ac)max]
Falling Signal =
ΔTF
Figure 21 – Illustration of tangent line for tIS
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CLK
CLK
tIH
tIS
tIS
tIH
VDDQ
VIH(ac)min
VIH(dc)min
DC to VREF
region
nominal
slew rate
VREF(dc)
nominal
slew rate
DC to VREF
region
VIL(dc)max
VIL(ac)max
VSS
ΔTR
VREF(dc) - VIL(dc)max
Hold Slew Rate
=
Rising Signal
ΔTR
ΔTF
Hold Slew Rate VIH(dc)min - VREF(dc)
Falling Signal =
ΔTF
Figure 22 – Illustration of nominal slew rate for tIH
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CLK
CLK
tIS
tIH
tIS
tIH
VDDQ
VIH(ac)min
nominal
line
VIH(dc)min
DC to VREF
region
tangent
line
VREF(dc)
tangent
line
nominal DC to VREF
region
line
VIL(dc)max
VIL(ac)max
VSS
ΔTR
ΔTF
tangent line[VREF(dc) - VIL(dc)max]
Hold Slew Rate
=
Rising Signal
ΔTR
tangent line[VIH(dc)min - VREF(dc)]
Hold Slew Rate
Falling Signal =
ΔTF
Figure 23 – Illustration of tangent line for tIH
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44. Data setup and hold time derating.
DDR2-667, DDR2-800 and DDR2-1066 tDS/tDH derating with differential data strobe
DQ
Slew
Rate
(V/nS)
ΔtDS, ΔtDH Derating Values for DDR2-667, DDR2-800 and DDR2-1066 (All units in ‘pS’; the note applies to
the entire table)
DQS/ DQS Differential Slew Rate
4.0 V/nS
3.0 V/nS
2.0 V/nS
1.8 V/nS
1.6 V/nS
1.4 V/nS
1.2 V/nS
1.0 V/nS
0.8 V/nS
ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH
2.0
100
45
100
45
100
45
-
-
-
-
-
-
-
-
-
-
-
-
1.5
67
21
67
21
67
21
79
33
-
-
-
-
-
-
-
-
-
-
1.0
0
0
0
0
0
0
12
12
24
24
-
-
-
-
-
-
-
-
0.9
-
-
-5
-14
-5
-14
7
-2
19
10
31
22
-
-
-
-
-
-
0.8
-
-
-
-
-13
-31
-1
-19
11
-7
23
5
35
17
-
-
-
-
0.7
-
-
-
-
-
-
-10
-42
2
-30
14
-18
26
-6
38
6
-
-
0.6
-
-
-
-
-
-
-
-
-10
-59
2
-47
14
-35
26
-23
38
-11
0.5
-
-
-
-
-
-
-
-
-
-
-24
-89
-12
-77
0
-65
12
-53
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-52
-140
-40
-128
-28
-116
For all input signals the total tDS (setup time) and tDH (hold time) required is calculated by adding the data sheet tDS(base) and
tDH(base) value to the ΔtDS and ΔtDH derating value respectively. Example: tDS (total setup time) = tDS(base) + ΔtDS.
Setup (tDS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VREF(dc) and the first
crossing of VIH(ac)min. Setup (tDS) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of
VREF(dc) and the first crossing of VIL(ac)max. If the actual signal is always earlier than the nominal slew rate line between
shaded ‘VREF(dc) to AC region’, use nominal slew rate for derating value. See Figure 24 Illustration of nominal slew rate for
tDS (differential DQS, DQS ).
If the actual signal is later than the nominal slew rate line anywhere between shaded ‘VREF(dc) to AC region’, the slew rate of a
tangent line to the actual signal from the AC level to DC level is used for derating value. See Figure 25 Illustration of tangent line
for tDS (differential DQS, DQS ).
Hold (tDH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VIL(dc)max and the first
crossing of VREF(dc). Hold (tDH) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of
VIH(dc)min and the first crossing of VREF(dc). If the actual signal is always later than the nominal slew rate line between
shaded ‘DC level to VREF(dc) region’, use nominal slew rate for derating value. See Figure 26 Illustration of nominal slew rate
for tDH (differential DQS, DQS ).
If the actual signal is earlier than the nominal slew rate line anywhere between shaded ‘DC to VREF(dc) region’, the slew rate of
a tangent line to the actual signal from the DC level to VREF(dc) level is used for derating value. See Figure 27 Illustration of
tangent line for tDH (differential DQS, DQS ).
Although for slow slew rates the total setup time might be negative (i.e. a valid input signal will not have reached VIH/IL(ac) at
the time of the rising clock transition) a valid input signal is still required to complete the transition and reach VIH/IL(ac).
For slew rates in between the values listed in above DDR2-667, DDR2-800 and DDR2-1066 tDS/tDH derating with differential
data strobe table, the derating values may be obtained by linear interpolation.
These values are typically not subject to production test. They are verified by design and characterization.
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45. Slew Rate Measurement Levels:
a) Output slew rate for falling and rising edges is measured between VTT - 250 mV and VTT + 250 mV for single ended
signals.
For differential signals (e.g. DQS - DQS ) output slew rate is measured between DQS - DQS = - 500 mV and DQS -
DQS = + 500 mV. Output slew rate is guaranteed by design, but is not necessarily tested on each device.
b)
Input slew rate for single ended signals is measured from VREF(dc) to VIH(ac),min for rising edges and from VREF(dc) to
VIL(ac),max for falling edges.
For differential signals (e.g. CLK - CLK ) slew rate for rising edges is measured from CLK - CLK = - 250 mV to CLK -
CLK = + 500 mV (+ 250 mV to - 500 mV for falling edges).
c)
VID is the magnitude of the difference between the input voltage on CLK and the input voltage on CLK , or between DQS
and DQS for differential strobe.
46. DDR2 SDRAM output slew rate test load:
Output slew rate is characterized under the test conditions as shown in below figure.
VDDQ
DQ
DUT
Output
VTT = VDDQ/2
DQS, DQS
RDQS, RDQS
Test point
25Ω
Output slew rate test load
47. Differential data strobe:
DDR2 SDRAM pin timings are specified for either single ended mode or differential mode depending on the setting of the EMRS
“Enable DQS” mode bit; timing advantages of differential mode are realized in system design. The method by which the DDR2
SDRAM pin timings are measured is mode dependent. In single ended mode, timing relationships are measured relative to the
rising or falling edges of DQS crossing at VREF. In differential mode, these timing relationships are measured relative to the
cross point of DQS and its complement, DQS . This distinction in timing methods is guaranteed by design and characterization.
Note that when differential data strobe mode is disabled via the EMRS, the complementary pin, DQS , must be tied externally
to VSS through a 20 Ω to 10 kΩ resistor to insure proper operation.
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DQS
DQS
tDS
tDH
tDS
tDH
VDDQ
VIH(ac)min
VREF to AC
region
VIH(dc)min
nominal
slew rate
VREF(dc)
nominal
slew rate
VIL(dc)max
VREF to AC
region
VIL(ac)max
VSS
ΔTF
ΔTR
VIH(ac)min - VREF(dc)
Setup Slew Rate
=
Rising Signal
ΔTR
VREF(dc) - VIL(ac)max
Setup Slew Rate
=
Falling Signal
ΔTF
Figure 24 – Illustration of nominal slew rate for tDS (differential DQS, DQS )
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DQS
DQS
tDS
tDH
tDS
tDH
VDDQ
nominal
line
VIH(ac)min
VREF to AC
region
VIH(dc)min
tangent
line
VREF(dc)
tangent
line
VIL(dc)max
VREF to AC
region
VIL(ac)max
nominal
line
ΔTR
VSS
Setup Slew Rate tangent line[VIH(ac)min - VREF(dc)]
Rising Signal =
ΔTR
ΔTF
Setup Slew Rate tangent line[VREF(dc) - VIL(ac)max]
Falling Signal =
ΔTF
Figure 25 – Illustration of tangent line for tDS (differential DQS, DQS )
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DQS
DQS
tDS
tDS
tDH
tDH
VDDQ
VIH(ac)min
VIH(dc)min
DC to VREF
region
nominal
slew rate
VREF(dc)
nominal
slew rate
DC to VREF
region
VIL(dc)max
VIL(ac)max
VSS
ΔTR
Hold Slew Rate VREF(dc) - VIL(dc)max
Rising Signal =
ΔTR
ΔTF
VIH(dc)min - VREF(dc)
Hold Slew Rate
Falling Signal =
ΔTF
Figure 26 – Illustration of nominal slew rate for tDH (differential DQS, DQS )
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DQS
DQS
tDS
tDS
tDH
tDH
VDDQ
VIH(ac)min
nominal
line
VIH(dc)min
DC to VREF
region
tangent
line
VREF(dc)
tangent
line
nominal
line
VIL(dc)max
DC to VREF
region
VIL(ac)max
VSS
ΔTR
ΔTF
Hold Slew Rate tangent line[VREF(dc) - VIL(dc)max]
Rising Signal =
ΔTR
Hold Slew Rate tangent line [VIH(dc)min - VREF(dc)]
=
Falling Signal
ΔTF
Figure 27 – Illustration tangent line for tDH (differential DQS, DQS )
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10.12 AC Input Test Conditions
CONDITION
SYMBOL
VALUE
UNIT
NOTES
0.5 x VDDQ
V
1
Input reference voltage
VREF
Input signal maximum peak to peak swing
VSWING(MAX)
1.0
V
1
Input signal minimum slew rate
SLEW
1.0
V/nS
2, 3
Notes:
1. Input waveform timing is referenced to the input signal crossing through the VIH/IL(ac) level applied to the device under test.
2. The input signal minimum slew rate is to be maintained over the range from VREF to VIH(ac) min for rising edges and the
range from VREF to VIL(ac) max for falling edges as shown in the below figure.
3. AC timings are referenced with input waveforms switching from VIL(ac) to VIH(ac) on the positive transitions and VIH(ac) to
VIL(ac) on the negative transitions.
10.13 Differential Input/Output AC Logic Levels
PARAMETER
SYM.
MIN.
MAX.
UNIT
NOTES
AC differential input voltage
VID (ac)
0.5
VDDQ + 0.6
V
1
AC differential cross point input voltage
VIX (ac)
0.5 x VDDQ - 0.175 0.5 x VDDQ + 0.175
V
2
AC differential cross point output voltage
VOX (ac)
0.5 x VDDQ - 0.125 0.5 x VDDQ + 0.125
V
3
Notes:
1. VID (ac) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input signal (such
as CLK, DQS) and VCP is the complementary input signal (such as CLK , DQS ). The minimum value is equal to VIH (ac) VIL (ac).
2. The typical value of VIX (ac) is expected to be about 0.5 x VDDQ of the transmitting device and VIX (ac) is expected to track
variations in VDDQ. VIX (ac) indicates the voltage at which differential input signals must cross.
3. The typical value of VOX (ac) is expected to be about 0.5 x VDDQ of the transmitting device and VOX (ac) is expected to
track variations in VDDQ. VOX (ac) indicates the voltage at which differential output signals must cross.
VDDQ
VIH(ac) min
VIH(dc) min
VSWING(MAX)
VREF
VIL(dc) max
VDDQ
VTR
VID
VIL(ac) max
VCP
VSS
ΔTF
VREF - VIL(ac) max
Falling Slew =
ΔTF
ΔTR
Rising Slew =
Crossing point
VIX or VOX
VSSQ
VIH(ac) min - VREF
ΔTR
Figure 28 – AC input test signal and Differential signal levels waveform
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10.14 AC Overshoot / Undershoot Specification
10.14.1 AC Overshoot / Undershoot Specification for Address and Control Pins:
Applies to A0-A14, BA0-BA2, CS , RAS , CAS , WE , CKE, ODT
PARAMETER
DDR2-1066
DDR2-800
DDR2-667
UNIT
Maximum peak amplitude allowed for overshoot area
0.5
0.5
0.5
V
Maximum peak amplitude allowed for undershoot area
0.5
0.5
0.5
V
Maximum overshoot area above VDD
0.5
0.66
0.8
V-nS
Maximum undershoot area below VSS
0.5
0.66
0.8
V-nS
10.14.2 AC Overshoot / Undershoot Specification for Clock, Data, Strobe and Mask pins:
Applies to DQ, DQS, DQS , RDQS, RDQS , DM, CLK, CLK
PARAMETER
DDR2-1066
DDR2-800
DDR2-667
UNIT
Maximum peak amplitude allowed for overshoot area
0.5
0.5
0.5
V
Maximum peak amplitude allowed for undershoot area
0.5
0.5
0.5
V
Maximum overshoot area above VDDQ
0.19
0.23
0.23
V-nS
Maximum undershoot area below VSSQ
0.19
0.23
0.23
V-nS
Maximum Amplitude
Overshoot Area
VDD/VDDQ
Volts (V)
VSS/VSSQ
Maximum Amplitude
Undershoot Area
Time (nS)
Figure 29 – AC overshoot and undershoot definition
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11. TIMING WAVEFORMS
11.1 Command Input Timing
tCK
tCK
tCH
tCL
CLK
CLK
tIS
tIH
CS
tIS
tIH
tIS
tIH
tIS
tIH
tIS
tIH
RAS
CAS
WE
A0~A14
BA0,1,2
Refer to the Command Truth Table
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11.2 ODT Timing for Active/Standby Mode
T0
T1
T2
T4
T3
T5
T6
T7
T8
T7
T8
CLK
CLK
tIS
CKE
tIS
tIS
VIH(ac)
ODT
VIL(ac)
tAOFD
tAOND
Internal
Term Res.
RTT
tAON(min)
tAOF(min)
tAOF(max)
tAON(max)
11.3 ODT Timing for Power Down Mode
T0
T1
CLK
T2
T3
T4
T5
T6
CLK
CKE
tIS
tIS
VIH(ac)
ODT
VIL(ac)
tAOFPD(max)
tAOFPD(min)
Internal
Term Res.
RTT
tAONPD(min)
tAONPD(max)
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11.4 ODT Timing mode switch at entering power down mode
T-5
T-2
T-3
T-4
T0
T-1
T1
T2
CLK
CLK
tANPD
CKE
tIS
Entering Slow Exit Active Power Down
Mode or Precharge Power Down Mode
tIS
ODT
Active & Standby
mode timings to be
applied
VIL(ac)
Internal
RTT
Term Res.
tAOFD
tIS
ODT
VIL(ac)
Internal
Power Down mode
timings to be applied
RTT
Term Res.
tAOFPD(max)
tIS
Active & Standby
mode timings to be
applied
VIH(ac)
tAOND
ODT
Internal
RTT
Term Res.
tIS
VIH(ac)
Power Down mode
timings to be applied
tAONPD(max)
ODT
Internal
RTT
Term Res.
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11.5 ODT Timing mode switch at exiting power down mode
T0
T1
T5
T7
T6
T9
T8
T10
CLK
CLK
tIS
tAXPD
VIH(ac)
CKE
Exiting from Slow Active Power Down Mode
or Precharge Power Down Mode
tIS
ODT
Active & Standby mode
timings to be applied
VIL(ac)
Internal
RTT
Term Res.
tAOFD
tIS
ODT
Power Down mode
timings to be applied
VIL(ac)
Internal
RTT
Term Res.
tAOFPD(max)
tIS
VIH(ac)
Active & Standby mode
timings to be applied
ODT
Internal
RTT
R
TT
Term Res.
tAOND
tIS
VIH(ac)
Power Down mode
timings to be applied
ODT
Internal
RTT
Term Res.
tAONPD(max)
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11.6 Data output (read) timing
tCH
tCL
CLK
CLK
DQS
DQS
DQS
DQS
tRPST
tRPRE
Q
DQ
Q
Q
tDQSQmax
Q
tDQSQmax
tQH
tQH
11.7 Burst read operation: RL=5 (AL=2, CL=3, BL=4)
T0
T1
T2
T4
T3
T5
T6
T7
T8
CLK/CLK
CMD
Posted CAS
READ A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
≤ tDQSCK
DQS,
DQS
CL = 3
AL = 2
RL = 5
Dout
A0
DQ's
Dout
A1
Dout
A2
Dout
A3
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11.8 Data input (write) timing
tDQSH
DQS
DQS
DQS
tDQSL
DQS
tWPRE
tWPST
VIH(ac)
D
DQ
VIH(dc)
D
VIL(dc)
D
VIL(ac)
DM
VIH(ac)
DMin
VIL(ac)
DMin
tDH
tDH
tDS
tDS
D
VIH(dc)
DMin
VIL(dc)
DMin
11.9 Burst write operation: RL=5 (AL=2, CL=3, WL=4, BL=4)
T0
T1
T2
T3
T4
T5
T6
T7
Tn
CLK
CLK
CMD
Posted CAS
WRITE A
NOP
NOP
NOP
NOP
NOP
tDQSS
Case 1: with tDQSS(max)
DQS
DQS
NOP
tDQSS
tDSS
tDSS
WL = RL – 1= 4
Case 2: with tDQSS(min)
Precharge
Completion of
The Burst Write
≥ tWR
DIN
A0
tDQSS
DQs
NOP
DIN
A1
DIN
A2
DIN
A3
tDQSS
tDSH
tDSH
DQS
DQS
WL = RL – 1= 4
DQs
≥ tWR
DIN
A0
DIN
A1
DIN
A2
DIN
A3
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11.10 Seamless burst read operation: RL = 5 ( AL = 2, and CL = 3, BL = 4)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
CLK
CMD
Post CAS
READ A
Post CAS
READ B
NOP
NOP
NOP
NOP
NOP
NOP
NOP
DQS
DQS
CL = 3
AL = 2
RL = 5
DOUT
A1
DOUT
A0
DQ's
DOUT
A2
DOUT
A3
DOUT
B0
DOUT
B1
DOUT
B2
Note:
The seamless burst read operation is supported by enabling a read command at every other clock for BL = 4 operation, and
every 4 clock for BL = 8 operation. This operation is allowed regardless of same or different banks as long as the banks are
activated.
11.11 Seamless burst write operation: RL = 5 ( WL = 4, BL = 4)
T0
T1
T2
T3
T4
T5
T8
T7
T6
CLK
CLK
CMD
Post CAS
Write A
NOP
Post CAS
Write B
NOP
NOP
NOP
NOP
NOP
NOP
DQS
DQS
WL = RL - 1 = 4
DQ's
DIN
A0
DIN
A1
DIN
A2
DIN
A3
DIN
B0
DIN
B1
DIN
B2
DIN
B3
Note:
The seamless burst write operation is supported by enabling a write command every other clock for BL = 4 operation, every four
clocks for BL = 8 operation. This operation is allowed regardless of same or different banks as long as the banks are activated.
Publication Release Date: May 08, 2015
Revision: A02
- 74 -
W972GG8KB
11.12 Burst read interrupt timing: RL =3 (CL=3, AL=0, BL=8)
T0
T1
T2
T3
T5
T4
T6
T7
T8
CLK/CLK
CMD
READ A
NOP
READ B
NOP
NOP
NOP
NOP
NOP
NOP
DQS,
DQS
Dout
A0
DQ's
Dout
A1
Dout
A2
Dout
A3
Dout
B0
Dout
B1
Dout
B2
Dout
B3
Dout
B4
Dout
B5
Dout
B6
Dout
B7
11.13 Burst write interrupt timing: RL=3 (CL=3, AL=0, WL=2, BL=8)
T0
T1
T2
T3
T5
T4
T6
T7
T8
CLK/CLK
CMD
NOP
Write A
NOP
Write B
NOP
NOP
NOP
NOP
NOP
DQS,
DQS
DQ's
Din
A0
Din
A1
Din
A2
Din
A3
Din
B0
Din
B1
Din
B2
Din
B3
Din
B4
Din
B5
Din
B6
Din
B7
Publication Release Date: May 08, 2015
Revision: A02
- 75 -
W972GG8KB
11.14 Write operation with Data Mask: WL=3, AL=0, BL=4)
Data Mask Timing
DQS/
DQS
DQ
VIH(ac) VIH(dc)
VIH(ac) VIH(dc)
VIL(ac) VIL(dc)
VIL(ac) VIL(dc)
tDS tDH
tDS
DM
tDH
CLK
CLK
CMDMAND
Write
tWR
WL + tDQSS (min)
Case 1: min tDQSS
DQS/DQS
DQ
DM
Case 2: max tDQSS
WL + tDQSS (max)
DQS/DQS
DQ
DM
Publication Release Date: May 08, 2015
Revision: A02
- 76 -
W972GG8KB
11.15 Burst read operation followed by precharge: RL=4 (AL=1, CL=3, BL=4, tRTP
≤ 2clks)
T0
T1
T2
T3
T5
T4
T6
T7
T8
CLK/CLK
CMD
Post CAS
READ A
NOP
NOP
Precharge
NOP
Bank A
Activate
NOP
NOP
NOP
≥ tRP
AL+BL/2 clks
DQS,
DQS
CL = 3
AL = 1
RL = 4
Dout
A0
DQ's
Dout
A1
Dout
A2
Dout
A3
≥ tRAS
≥ tRTP
11.16 Burst read operation followed by precharge: RL=4 (AL=1, CL=3, BL=8, tRTP
≤ 2clks)
T0
T1
T2
T3
T5
T4
T6
T7
T8
CLK/CLK
CMD
Post CAS
READ A
NOP
NOP
NOP
NOP
Precharge
NOP
NOP
NOP
AL + BL/2 clks
DQS,
DQS
AL = 1
CL = 3
RL = 4
Dout
A0
DQ's
Dout
A1
Dout
A2
Dout
A3
Dout
A4
Dout
A5
Dout
A6
Dout
A7
≥ tRTP
first 4-bit prefetch
second 4-bit prefetch
Publication Release Date: May 08, 2015
Revision: A02
- 77 -
W972GG8KB
11.17 Burst read operation followed by precharge: RL=5 (AL=2, CL=3, BL=4, tRTP
≤ 2clks)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK/CLK
CMD
Post CAS
READ A
NOP
Precharge
NOP
NOP
Bank A
Activate
NOP
NOP
NOP
≥ tRP
AL + BL/2 clks
DQS,
DQS
AL = 2
CL = 3
RL = 5
Dout
A0
DQ's
≥ tRAS
Dout
A1
Dout
A2
Dout
A3
CL = 3
≥ tRTP
11.18 Burst read operation followed by precharge: RL=6 (AL=2, CL=4, BL=4, tRTP
≤ 2clks)
T0
T1
T2
T4
T3
T5
T6
T8
T7
CLK/CLK
CMD
Post CAS
READA
NOP
NOP
NOP
Precharge
NOP
Bank A
Activate
NOP
NOP
≥ tRP
AL + BL/2 clks
DQS,
DQS
AL = 2
CL = 4
RL = 6
Dout
A0
DQ's
≥ tRAS
Dout
A1
Dout
A2
Dout
A3
CL = 4
≥ tRTP
Publication Release Date: May 08, 2015
Revision: A02
- 78 -
W972GG8KB
11.19 Burst read operation followed by precharge: RL=4 (AL=0, CL=4, BL=8, tRTP
> 2clks)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK/CLK
CMD
Post CAS
READ A
NOP
NOP
NOP
Precharge
NOP
NOP
Bank A
Activate
NOP
AL + BL/2 + max(RTP, 2) - 2 clks
DQS,
DQS
AL = 0
CL = 4
≥ tRP
RL = 4
Dout
A0
DQ's
Dout
A1
Dout
A2
Dout
A3
Dout
A4
Dout
A5
Dout
A6
Dout
A7
≥ tRAS
≥ tRTP
second 4-bit prefetch
first 4-bit prefetch
11.20 Burst write operation followed by precharge: WL = (RL-1) = 3
T0
T1
T2
T3
T5
T4
T6
T7
T8
CLK/CLK
CMD
Post CAS
WRITE A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Precharge
Completion of the Burst Write
≥ tWR
DQS,
DQS
WL = 3
DQ's
DIN
A0
DIN
A1
DIN
A2
DIN
A3
Publication Release Date: May 08, 2015
Revision: A02
- 79 -
W972GG8KB
11.21 Burst write operation followed by precharge: WL = (RL-1) = 4
T0
T1
T2
T3
T4
T5
T6
T7
T9
CLK/CLK
CMD
Posted CAS
WRITE A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Precharge A
Completion of the Burst Write
≥ tWR
DQS,
DQS
WL = 4
DIN A0 DIN A1 DIN A2 DIN A3
DQ's
11.22 Burst read operation with Auto-precharge: RL=4 (AL=1, CL=3, BL=8, tRTP ≤
2clks)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK/CLK
CMD
Post CAS
READA
A10 = 1
NOP
NOP
NOP
NOP
NOP
NOP
Bank A
Activate
NOP
≥ tRP
AL + BL/2 clks
DQS,
DQS
AL = 1
CL = 3
RL = 4
Dout
A0
DQ's
Dout
A1
Dout
A2
Dout
A3
Dout
A4
Dout
A5
Dout
A6
Dout
A7
≥ tRTP
first 4-bit prefetch
second 4-bit prefetch
tRTP
Precharge begins here
Publication Release Date: May 08, 2015
Revision: A02
- 80 -
W972GG8KB
11.23 Burst read operation with Auto-precharge: RL=4 (AL=1, CL=3, BL=4, tRTP >
2clks)
T0
T1
T2
T4
T3
T5
T6
T7
T8
CLK/CLK
CMD
Post CAS
READA
NOP
A10 = 1
NOP
NOP
NOP
NOP
Bank A
Activate
NOP
NOP
≥ AL + tRTP + tRP
DQS,
DQS
AL = 1
CL = 3
RL = 4
Dout
A0
DQ's
4-bit prefetch
Dout
A1
tRTP
Dout
A2
Dout
A3
tRP
Precharge begins here
11.24 Burst read with Auto-precharge followed by an activation to the same bank
(tRC Limit): RL=5 (AL=2, CL=3, internal tRCD=3, BL=4, tRTP ≤ 2clks)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK/CLK
CMD
Post CAS
READA
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Bank A
Activate
A10 = 1
≥ tRAS min. (AL + BL/2)
Auto-precharge begins
DQS,
DQS
≥ tRP
AL = 2
CL = 3
RL = 5
Dout
A0
DQ's
Dout
A1
Dout
A2
Dout
A3
tRC min.
Publication Release Date: May 08, 2015
Revision: A02
- 81 -
W972GG8KB
11.25 Burst read with Auto-precharge followed by an activation to the same bank
(tRP Limit): RL=5 (AL=2, CL=3, internal tRCD=3, BL=4, tRTP ≤ 2clks)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK/CLK
CMD
Post CAS
READA
NOP
NOP
NOP
NOP
NOP
Bank A
Activate
NOP
NOP
A10 = 1
Auto-precharge begins
≥ tRAS min.
DQS,
DQS
tRP min.
AL = 2
CL = 3
RL = 5
Dout
A0
DQ's
Dout
A1
Dout
A2
Dout
A3
≥ tRC
11.26 Burst write with Auto-precharge (tRC Limit): WL=2, WR=2, BL=4, tRP=3
T0
T1
T2
T3
T4
T5
T6
T7
Tm
CLK/CLK
CMD
Post CAS
WRA Bank A
NOP
NOP
NOP
A10 = 1
NOP
NOP
NOP
NOP
Bank A
Activate
Completion of the Burst Write
Auto-precharge Begins
DQS,
DQS
≥ WR
≥ tRP
WL= RL- 1 = 2
DQ's
DIN
A0
DIN
A1
DIN
A2
DIN
A3
tRC min.
Publication Release Date: May 08, 2015
Revision: A02
- 82 -
W972GG8KB
11.27 Burst write with Auto-precharge (WR + tRP Limit): WL=4, WR=2, BL=4, tRP=3
T0
T3
T4
T6
T5
T7
T8
T11
T9
CLK/CLK
CMD
Post CAS
WRA Bank A
NOP
NOP
NOP
NOP
NOP
Bank A
Activate
NOP
NOP
A10 = 1
Completion of the Burst Write
Auto-precharge Begins
DQS,
DQS
≥ WR
tRP min.
WL = RL - 1 = 4
DIN
A0
DQ's
DIN
A1
DIN
A2
DIN
A3
≥ tRC
11.28 Self Refresh Timing
T0
T1
T2
T3
T4
T5
Tm
T6
Tn
tCK
tCH
tCL
CLK
CLK
≥ tXSNR
tRP
≥ tXSRD
CKE
VIH(ac)
VIL(ac)
tAOFD
ODT
tIS
tIH
VIL(ac)
tIH
tIS
tIS
tIH
tIS tIH
CMD
VIH(ac)
VIL(ac)
Self
Refresh
VIH(dc)
VIL(dc)
NOP
Non-Read
Command
NOP
Read
Command
Notes:
1. Device must be in the “All banks idle” state prior to entering Self Refresh mode.
2. ODT must be turned off tAOFD before entering Self Refresh mode, and can be turned on again when tXSRD timing is
satisfied.
3. tXSRD is applied for a Read or a Read with Auto-precharge command. tXSNR is applied for any command except a Read or a
Read with Auto-precharge command.
Publication Release Date: May 08, 2015
Revision: A02
- 83 -
W972GG8KB
11.29 Basic Power Down Entry and Exit Timing
CLK
CLK
tIH
tIS
tIH
tIS
tIH
tIS tIH
CKE
CMD
VALID
NOP
NOP
tCKEmin
NOP
VALID
VALID
or NOP
tXP, tXARD
tXARDS
tCKEmin
Power-Down Mode Exit
Power-Down Mode Entry
Don't Care
11.30 Precharged Power Down Entry and Exit Timing
CLK
CLK
tIH
tIS
tIH
tIS
CKE
CMD
NOP
Precharge
1 x tCK
NOP
VALID
tXP
tCKEmin
Precharge Power-Down Entry
NOP
Precharge Power-Down Exit
Don't Care
Publication Release Date: May 08, 2015
Revision: A02
- 84 -
W972GG8KB
11.31 Clock frequency change in precharge Power Down mode
T0
T1
T2
NOP
NOP
T4
TX
TX+1
TY
TY+1
TY+2
TY+3
TY+4
NOP
NOP
DLL
RESET
Tz
CLK
CLK
CMD
NOP
Valid
CKE
200 Clocks
tIS
tIS
Frequency change
Occurs here
ODT
tRP
tIH
tXP
tAOFD
Minimum 2 clocks
required before
changing frequency
ODT is off during
DLL RESET
Stable new clock
before power down exit
Publication Release Date: May 08, 2015
Revision: A02
- 85 -
W972GG8KB
12. PACKAGE SPECIFICATION
Package Outline WBGA60 (8x12.5 mm2, ball pitch: 0.8mm, Ø =0.45mm)
E1
A1
eE
bbb
A
C
aaa
E
Pin A1 index
Pin A1 index
9
8
7
3
2
1
B
eD
A
B
C
D
D
D1
E
F
A
G
H
J
K
L
THE WINDOW-SIDE
ENCAPSULANT
SOLDER BALL DIAMETER REFERS.
TO POST REFLOW CONDITION.
60xΦb
SYMBOL
A
A1
b
D
E
D1
0.25
0.40
--0.45
12.40
7.90
12.50
8.00
8.00 BSC.
6.40 BSC.
-------
0.80 BSC.
0.80 BSC.
-------
C
C
SEATING PLANE
DIMENSION (MM)
MIN.
NOM.
MAX.
----1.20
E1
eE
eD
aaa
bbb
ccc
ccc
BALL LAND
0.40
0.50
12.60
8.10
1
BALL OPENING
0.15
0.20
0.10
Note:
1. Ball land: 0.5mm, Ball opening: 0.4mm, PCB Ball land
suggested ≤ 0.4mm
Publication Release Date: May 08, 2015
Revision: A02
- 86 -
W972GG8KB
13. REVISION HISTORY
VERSION
DATE
PAGE
DESCRIPTION
A01
Mar. 27, 2015
All
Initial formally datasheet
A02
May 08, 2015
67
Aligned to JEDEC JESD79-2Fstandard for
overshoot/undershoot specification
Important Notice
Winbond products are not designed, intended, authorized or warranted for use as components
in systems or equipment intended for surgical implantation, atomic energy control
instruments, airplane or spaceship instruments, transportation instruments, traffic signal
instruments, combustion control instruments, or for other applications intended to support or
sustain life. Further more, Winbond products are not intended for applications wherein failure
of Winbond products could result or lead to a situation wherein personal injury, death or
severe property or environmental damage could occur.
Winbond customers using or selling these products for use in such applications do so at their
own risk and agree to fully indemnify Winbond for any damages resulting from such improper
use or sales.
Publication Release Date: May 08, 2015
Revision: A02
- 87 -