ROHM SM6K2

SM6K2
Transistors
Switching (60V, 200mA)
SM6K2
0.95 0.95
1.9
2.9
(3)
(4)
(5)
(2)
(1)
(6)
!External dimensions (Units : mm)
0.3
!Features
1) Two RHU002N06 chips in a SMT package.
2) Mounting possible with SMT3 automatic mounting
machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
1.6
0.3Min.
ROHM : SMT6
EIAJ : SC-74
JEDEC : SOT-457
The following characteristics apply to both Tr1 and Tr2.
!Equivalent circuit
(1)
(2)
(3)
∗
(1) TR1 Drain
(2) TR2 Gate
(3) TR2 Source
(4) TR2 Drain
(5) TR1 Gate
(6) TR1 Source
∗
∗Gate
(6)
(5)
(4)
Protection
Diode.
∗ A protection diode has been built in between the gate
and the source to protect against static electricity
when the product is in use.
Use the protection circuit when fixed voltages are exceeded.
!Absolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Limits
Unit
VDSS
60
V
VGSS
±20
V
ID
200
mA
IDP∗1
800
mA
Continuous
Pulsed
Drain reverse current
Symbol
Continuous
Pulsed
IDR
IDRP∗1
200
mA
800
mA
Total power dissipation
PD∗2
200
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55~+150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When using 1×0.75×0.062 inch glass epoxy board.
0~0.1
!Structure
Silicon N-channel
MOSFET transistor
1.1
0.8
0.15
2.8
Each lead has same dimensions
Abbreviated symbol : K2
SM6K2
Transistors
!Electrical characteristics (Ta=25°C)
Parameter
Min.
Typ.
Max.
Unit
IGSS
−
−
±10
µA
VGS=±20V, VDS=0V
V (BR) DSS
60
−
−
V
ID=10µA, VGS=0V
IDSS
−
−
1
µA
VDS=60V, VGS=0V
VGS (th)
1
−
2.5
V
VDS=10V, ID=1mA
−
1.7
2.4
−
2.8
4.0
Symbol
Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Gate threshold voltage
Drain-source on-state resistance RDS (on)∗1
Ω
Test Conditions
ID=200mA, VGS=10V
ID=200mA, VGS=4V
Yfs l∗1
100
−
−
mS
VDS=10V, ID=200mA
Input capacitance
Ciss
−
15
−
pF
Output capacitance
Coss
−
8
−
pF
Reverse transfer capacitance
Crss
−
4
−
pF
VDS=25V
VGS=0V
f=1MHz
td (on)∗2
−
6
−
ns
tr∗2
−
5
−
ns
td (off)∗2
−
12
−
ns
tf∗2
−
95
−
ns
Forward transfer admittance
l
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Qg∗2
−
2.2
4.4
nC
Gate-source charge
Qgs∗2
−
0.6
−
nC
Gate-drain charge
Qgd∗2
−
0.3
−
nC
ID=100mA, VDD 30V
VGS=10V
RL=300Ω
RGS=10Ω
VDD 30V
VGS=10V
ID=200mA
∗1 PW≤300µs, Duty cycle≤1%
∗2 Pulsed
!Packaging specifications
Taping
Package
Type
Code
T110
Basic ordering unit (pieces)
3000
SM6K2
1
0.8
10V
0.7
DRAIN CURRENT : ID (A)
8V
6V
0.6
0.5
4V
0.4
0.3
3.5V
0.2
VGS=3V
DRAIN CURRENT : ID (A)
Ta=25°C
Pulsed
VDS=10V
Pulsed
0.1
Ta=−25°C
25°C
75°C
125°C
0.01
0.1
0.0
0.0 0.5
1.0
1.5
2.0
2.5
3.0
3.5 4.0
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Typical output characteristics
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
GATE-SOURCE VOLTAGE : VGS (V)
Fig.2 Typical transfer characteristics
GATE THRESHOLD VOLTAGE : VGS (th) (V)
!Electrical characteristic curves
2.5
VDS=10V
ID=1mA
Pulsed
2.0
1.5
1.0
0.5
0.0
−50 −25
0
25
50
75
100 125 150
CHANNEL TEMPERATURE : Tch (°C)
Fig.3 Gate threshold voltage
vs. channel temperature
SM6K2
Transistors
10
Ta=125°C
75°C
25°C
−25°C
0.1
Ta=125°C
75°C
25°C
−25°C
1.0
0.01
1.0
0.1
DRAIN CURRENT : I D (A)
REVERSE DRAIN CURRENT : IDR (A)
ID=200mA
2.0
100mA
0
25
50
75
0.1
Ta=125°C
75°C
25°C
−25°C
0.01
0.001
0.0
100 125 150
0.4
0.6
0.8
5
10
15
VGS=10V
0V
0.1
0.01
0.2
0.4
0.6
0.8
75°C
125°C
0.01
1
Fig.9 Reverse drain current vs.
source-drain voltage ( ΙΙ )
1000
DRAIN CURRENT : ID (A)
Fig.10 Forward transfer admittance
vs. drain current
Ciss
10
Coss
Crss
1
0.01
1.2
1.0
SOURCE-DRAIN VOLTAGE : VSD (V)
Ta=25°C
f=1MHz
VGS=0V
Ta=−25°C
25°C
20
Ta=25°C
Pulsed
0.001
0.0
1.2
1.0
100
CAPACITANCE : C (pF)
FORWARD TRANSFER ADMITTANCE : I Yfs I (S)
0.2
VGS=10V
Pulsed
0.1
0
1
Fig.8 Reverse drain current vs.
source-drain voltage ( Ι )
1
0.01
100mA
1
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.7 Static drain-source on-state
resistance vs. channel temperature
0.001
0.001
2
10
VGS=0V
Pulsed
CHANNEL TEMPERATURE : Tch (°C)
0.1
ID=200mA
3
Fig.6 Static drain-source on-state
resistance vs. gate-source voltage
0.1
1
10
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.11 Typical capacitance
vs. drain-source voltage
100
SWITCHING TIME : t (ns)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
1
2.5
1.0
−50 −25
4
GATE-SOURCE VOLTAGE : VGS (V)
Fig.5 Static drain-source on-state
resistance vs. drain current ( ΙΙ )
VGS=10V
Pulsed
1.5
5
DRAIN CURRENT : I D (A)
Fig.4 Static drain-source on-State
resistance vs. drain current ( Ι )
3.0
Ta=25°C
Pulsed
6
0
1.0
REVERSE DRAIN CURRENT : IDR (A)
1.0
0.01
7
VGS=4V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
VGS=10V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
10
tf
100
Ta=25°C
VDD=30V
VGS=10V
RG=10Ω
Pulsed
td(off)
10
td(on)
tr
1
1
10
100
DRAIN CURRENT : ID (mA)
Fig.12 Switching characteristics
1000
SM6K2
Transistors
!Switching characteristics measurement circuit
Pulse width
VGS
RG
ID
D.U.T.
VDS
VGS
90%
50%
10%
RL
50%
10%
VDS
10%
VDD
90%
90%
td (on)
ton
Fig.13 Switching time test circuit
tr
td (off)
tf
toff
Fig.14 Switching time waveforms
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0