ROHM RHP030N03_0610

RHP030N03
Transistors
4V Drive Nch MOSFET
RHP030N03
zStructure
Silicon N-channel MOSFET
zDimensions (Unit : mm)
MPT3
1.5
2.5
4.0
zFeatures
1) Low On-resistance.
2) 4V drive.
0.5
4.5
1.6
(2)
(3)
1.0
(1)
0.5
0.4
1.5
(1)Gate
zApplications
Switching
1.5
3.0
(2)Drain
(3)Source
zPackaging specifications
Abbreviated symbol : KZ
zInner circuit
Package
Type
0.4
0.4
(3)
Taping
Code
T100
Basic ordering unit (pieces)
1000
RHP030N03
∗2
(2)
∗1
∗1 ESD PROTECTION DIODE (1)
∗2 BODY DIODE
(1) Source
(2) Gate
(3) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Reverse drain current
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
Symbol
VDSS
VGSS
ID
IDP ∗1
IDR
IDRP ∗1
PD
Tch
Tstg
Limits
30
±20
3
10
3
10
500
2 ∗2
150
−55 to +150
Unit
V
V
A
A
A
A
mW
W
°C
°C
Limits
250
62.5 ∗
Unit
°C/W
°C/W
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a 40×40×0.7mm ceramic board
zThermal resistance
Parameter
Channel to ambient
Symbol
Rth(ch-a)
∗ When mounted on a 40×40×0.7mm ceramic board
Rev.A
1/3
RHP030N03
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
IGSS
Gate-source leakage
Drain-source breakdown voltage V(BR) DSS
IDSS
Zero gate voltage drain current
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
RDS (on)∗
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
∗
∗
∗
∗
∗
∗
∗
∗
Min.
−
30
−
1.0
−
−
2.0
−
−
−
−
−
−
−
−
−
−
Typ.
Max.
−
−
−
−
90
160
−
160
90
27
7
11
15
4.5
6.5
1.0
1.5
±10
−
1
2.5
120
210
−
−
−
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
VGS=±20V, VDS=0V
ID= 1mA, VGS=0V
VDS= 30V, VGS=0V
VDS= 10V, ID= 1mA
ID= 3A, VGS= 10V
ID= 3A, VGS= 4V
VDS= 10V, ID= 3A
VDS= 10V
VGS=0V
f=1MHz
VDD 15V
ID= 1.5A
VGS= 10V
RL=10Ω
RG=10Ω
VDD 15V
VGS= 10V
ID= 3A
∗Pulsed
Rev.A
2/3
RHP030N03
Transistors
zElectrical characteristics curves
1000
0.1
1
10
100
tf
td (off)
10
td (on)
tr
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
0.1
REVERSE DRAIN CURRENT : IDR (A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
0.4
ID=3.0A
0.3
1.5A
0.2
0.1
0
0
2
4
6
8
10
12
14
10
0.1
0.01
0.01
0.1
1
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current ( Ι )
10
1.5
2
2.5
3
3.5
Fig.3 Typical Transfer Characteristics
10
VGS=0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
0.01
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1
Fig.2 Switching Characteristics
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Ta=25°C
Pulsed
1
VGS=10V
0.1
0V
0.01
0.001
0
0.2
0.4
0.6
0.8
1
1.2
SOURCE-DRAIN VOLTAGE : VSD (V)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.5 Reverse Drain Current vs.
Source-Drain Voltage ( Ι )
Fig.6 Reverse Drain Current vs.
Source-Drain Voltage ( ΙΙ )
1
VGS=10V
Pulsed
0.5
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
1
0
1
0.001
0.1
DRAIN CURRENT : ID (A)
GATE-SOURCE VOLTAGE : VGS (V)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
1
10
0.5
Ta=125°C
75°C
25°C
−25°C
1
0.01
1
0.01
100
DRAIN-SOURCE VOLTAGE : VDS (V)
Ta=25°C
Pulsed
DRAIN CURRENT : ID (A)
Crss
10
VDS=10V
Pulsed
REVERSE DRAIN CURRENT : IDR (A)
Coss
Ta=25°C
VDD= 15V
VGS= 10V
RG=10Ω
Pulsed
GATE THRESHOLD VOLTAGE : VGS (th) (V)
Ciss
100
1
0.01
10
1000
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
Ta=25°C
f=1MHz
VGS=0V
VGS=4V
Pulsed
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.01
0.01
0.1
1
DRAIN CURRENT : ID (A)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙ )
10
2.5
VSD=10V
ID=1mA
Pulsed
2
1.5
1
0.5
0
-50
-25
0
25
50
75
100
125
150
CHANNEL TEMPERATURE : Tch (°C)
Fig.9 Gate Threshold Voltage vs.
Channel Temperature
Rev.A
3/3
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
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exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1