UM5K1N Transistors 2.5V Drive Nch+Nch MOS FET UM5K1N zExternal dimensions (Unit : mm) zStructure Silicon N-channel MOS FET UMT5 2.0 1.3 zFeatures 1) Two 2SK3018 transistors in a single UMT package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance. 4) Low voltage drive (2.5V) makes this device ideal for portable equipment. 5) Drive circuits can be simple. 0.9 0.65 0.65 0.7 (1) (2) (3) 0.1Min. 1pin mark 2.1 1.25 (5) (4) 0.15 0.2 Each lead has same dimensions Abbreviated symbol : K1 zApplications Interfacing, switching (30V, 100mA) zPackaging specifications zEquivalent circui (6) Package Type (4) Taping TR Code Basic ordering unit (pieces) 3000 UM5K1N Tr1 ∗ zAbsolute maximum ratings (Ta=25°C) <It is the same ratings for Tr1 and Tr2.> (1) (1) Tr1 Gate (2) Source (3) Tr2 Gate (4) Tr2 Drain (6) Tr1 Drain Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 V Continuous ID ±100 mA Pulsed IDP∗1 ±400 mA PD∗2 150 mW / TOTAL 120 mW / ELEMENT Drain current Total power dissipation ∗ Gate Protection Diode Symbol Parameter Tr2 Channel temperature Tch 150 ˚C Storage temperature Tstg −55 to +150 ˚C Gate Protection Diode (2) (3) ∗ A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltagesare exceeded. ∗1 Pw≤10µs, Duty cycle≤50% ∗2 With each pin mounted on the recommended lands. zThermal resistance Parameter Channel to ambient Symbol Rth(ch-a) ∗ Limits Unit 833 1042 °C / W / TOTAL °C / W / ELEMENT ∗ With each pin mounted on the recommended lands. Rev.A 1/3 UM5K1N Transistors zElectrical characteristics (Ta=25°C) <It is the same characteristics for Tr1 and Tr2.> Symbol Min. Typ. Max. Unit IGSS − − ±1 µA Drain-source breakdown voltage V(BR)DSS 30 − − V ID=10µA, VGS=0V Zero gate voltage drain current IDSS − − 1 µA VDS=30V, VGS=0V Parameter Gate-source leakage Test Conditions VGS=±20V, VDS=0V Gate threshold voltage VGS(th) 0.8 − 1.5 V VDS=3V, ID=100µA Static drain-source on-stage resistance RDS(on) − 5 8 Ω ID=10mA, VGS=4V RDS(on) − 7 13 Ω ID=1mA, VGS=2.5V Forward transfer admittance Yfs 20 − − mS ID=10mA, VDS=3V Input capacitance Ciss − 13 − pF VDS=5V Output capacitance Coss − 9 − pF VGS=0V Reverse transfer capacitance Crss − 4 − pF f=1MHz Turn-on delay time td(on) − 15 − ns ID=10mA, VDD 5V tr − 35 − ns VGS=5V td(off) − 80 − ns RL=500Ω tf − 80 − ns RG=10Ω Rise time Turn-off delay time Fall time 0.15 200m Ta=25˚C Pulsed 3.5V 0.1 2.5V 0.05 2V 1 2 50m 20m 10m 5m 2m Ta=125˚C 75˚C 25˚C −25˚C 1m 0.5m 0.2m VGS=1.5V 0 0 VDS=3V Pulsed 100m 3 4 0.1m 0 5 DRAIN-SOURCE VOLTAGE : VDS (V) 10 50 VGS=4V Pulsed Ta=125˚C 75˚C 25˚C −25˚C 5 2 1 0.5 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 4 VDS=3V ID=0.1mA Pulsed 1.5 1 0.5 0 −50 −25 0.5 DRAIN CURRENT : ID (A) Fig.4 Static drain-source on-state resistance vs. drain current ( I ) 20 10 5 2 1 0.5 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 25 50 75 100 125 150 Fig.3 Gate threshold voltage vs. channel temperature VGS=2.5V Pulsed Ta=125˚C 75˚C 25˚C −25˚C 0 CHANNEL TEMPERATURE : Tch (˚C) Fig.2 Typical transfer characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 20 3 2 2 GATE-SOURCE VOLTAGE : VGS (V) Fig.1 Typical output characteristics 50 1 0.5 DRAIN CURRENT : ID (A) Fig.5 Static drain-source on-state resistance vs. drain current ( II ) 15 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 3V DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) 4V GATE THRESHOLD VOLTAGE : VGS (th) (V) zElectrical characteristic curves Ta=25˚C Pulsed 10 5 ID=0.1A ID=0.05A 0 0 5 10 15 20 GATE-SOURCE VOLTAGE : VGS (V) Fig.6 Static drain-source on-state resistance vs. gate-source voltage Rev.A 2/3 UM5K1N Transistors 0.5 VDS=3V Pulsed 0.2 ID=100mA 6 ID=50mA 5 4 3 2 Ta=−25˚C 25˚C 75˚C 125˚C 0.1 0.05 0.02 0.01 0.005 1 0.002 0 −50 −25 0.001 0.0001 0.0002 0 25 50 75 100 125 150 0V VGS=4V 5m 2m 1m 0.5m 0.5 1.5 1 5m 2m 1m 0.5m 0.2m 0 0.5 Fig.9 Reverse drain current vs. source-drain voltage ( I ) 1000 Coss Crss 2 td (off) 200 100 50 20 tr td (on) 10 5 0.5 0.1 SOURCE-DRAIN VOLTAGE : VSD (V) 0.2 0.5 1 2 5 10 20 2 0.1 0.2 50 0.5 1 2 5 10 20 50 100 DRAIN CURRENT : ID (mA) DRAIN-SOURCE VOLTAGE : VDS (V) Fig.10 Reverse drain current vs. source-drain voltage ( II ) Ta=25˚C VDD=5V VGS=5V RG=10Ω Pulsed tf 500 10 5 1.5 1 SOURCE-DRAIN VOLTAGE : VSD (V) Ciss 0.2m 0 Ta=125˚C 75˚C 25˚C −25˚C 10m 0.1m 1 0.1m 50m 0.5 Ta=25˚C f=1MHZ VGS=0V 20 50m CAPACITANCE : C (pF) REVERSE DRAIN CURRENT : IDR (A) 50 Ta=25˚C Pulsed 20m 0.05 0.1 0.2 VGS=0V Pulsed 20m Fig.8 Forward transfer admittance vs. drain current Fig.7 Static drain-source on-state resistance vs. channel temperature 200m 0.005 0.01 0.02 200m 100m DRAIN CURRENT : ID (A) CHANNEL TEMPERATURE : Tch (˚C) 100m 0.0005 0.001 0.002 SWITCHING TIME : t (ns) 7 10m REVERSE DRAIN CURRENT : IDR (A) VGS=4V Pulsed 8 FORWARD TRANSFER ADMITTANCE : Yfs (S) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 9 Fig.12 Switching characteristics (See Figures 13 and 14 for the measurment circuit and resultant waveforms) Fig.11 Typical capacitance vs. drain-source voltage zSwitching characteristics measurement circuit Pulse width VGS RG ID D.U.T. VDS VGS 90% 50% 10% RL 50% 10% VDS 10% VDD 90% 90% td (on) ton Fig.13 Switching time measurement circuit tr td (off) tf toff Fig.14 Switching time waveforms Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1