SODDB3 SERIES_B15

SODDB3/SODDB3T
Taiwan Semiconductor
Small Signal Product
400mW Trigger Diode (DIAC)
FEATURES
- Surface Mount Device SOD-123 packaged
- VBO=32V DB3
- Max. PD=400mW
MECHANICAL DATA
- Case: Plastic gull wing SOD-123 package
- High temperature soldering guaranteed: 260°C/10s
- Weight: 10.55mg (approximately)
SOD-123
- Moisture sensitivity level 1
- Pb free and RoHS compliant
APPLICATION
- These diacs are intended for use in thyrisitors phase control, circuits
for lamp dimming, universal motor speed control, and heat control
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
Repetitive Peak on-state Current
Power Dissipation
tp=20μs, f=100Hz
Junction Temperature
Storage Temperature Range
PARAMETER
Reverse Breakdown Voltage
Breakdown Voltage Symmetry
Dynamic Breakdown Voltage
SYMBOL
VALUE
UNIT
ITRM
PD
2
400
A
mW
TJ
- 40 to +125
o
C
TSTG
- 40 to +125
o
C
SYMBOL
SODDB3
SODDB3T
SODDB3
SODDB3T
SODDB3
SODDB3T
VBO
MIN
TYP
MAX
28
32
36
30
32
34
[|+VBO1 ||-VBO2 |]
|△V±|
±3
±2
5
9
Repetitive Peak on-state Current
ITRM
2
Output Voltage
VO
5
Leakage Current
IR
-
Rest Time
tr
Breakdown current
SODDB3
SODDB3T
IBO
10
TEST CONDITION
UNIT
C=22nF
V
C=22nF
V
△I=[ IBO to IF=10mA]
V
tP=20μs, f=100Hz
A
Note
V
VB = 0.5VBO
μA
1.5
μs
100
-
15
C=22nF
μA
Note: Test circuit for output voltage
Document Number: DS_S1406002
Version: B15
SODDB3/SODDB3T
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
Fig. 2 Power derating curve
1.08
200
1.06
150
Power dissipation (mW)
VBO(TJ)/VBO(TJ=25oC)
Fig.1 Relative variation of VBO vs. junction temperature
1.04
1.02
1
25
50
75
100
125
100
50
0
0
25
50
75
100
125
150
Ambient temperature (°C)
Junction temperature (°C)
Fig. 3 Peak pulse current vs. pulse duration
Repetitive peak on-state current ITRM(A)
10
f=100Hz
1
0.1
0.01
10
100
1000
10000
tp(μs)
Document Number: DS_S1406002
Version: B15
SODDB3/SODDB3T
Taiwan Semiconductor
Small Signal Product
ORDER INFORMATION (EXAMPLE)
SODDB3 RFG
Green compound code
Packing code
Part no.
PACKAGE OUTLINE DIMENSIONS
SOD-123
DIM.
A
Unit (mm)
Unit (inch)
Min
Max
Min
Max
1.40
1.80
0.055
0.071
B
3.55
3.85
0.140
0.152
C
0.45
0.70
0.018
0.028
D
2.55
2.85
0.100
0.112
E
0.95
1.35
0.037
0.053
F
0.05
0.15
0.002
0.006
G
0.50 REF
0.02 REF
H
-
-
0.10
0.004
SUGGESTED PAD LAYOUT
Unit (mm)
Unit (inch)
Min
Min
G
2.25
0.089
X
0.90
0.035
X1
4.05
0.159
Y
0.95
0.037
DIM.
MARKING
Note: Apply positive voltage in cathode line and apply negative in another
electrode, it will show better I/V curve. It help user
differentiate the direction of purpose.
Cathode line
Document Number: DS_S1406002
Version: B15
SODDB3/SODDB3T
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_S1406002
Version: B15