TESDL5V0/TESDL12V/TESDL24V Taiwan Semiconductor Small Signal Product Bi-directional ESD Protection Diode FEATURES - Meet IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) - Designed for mounting on small surface - Protects one Bi-directional I/O line - Moisture sensitivity level 1 - Working Voltage : 5V, 12V, 24V - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) 1005 MECHANICAL DATA - Case: 1005 small outline plastic package - Terminal : Gold plated, solder per MIL-STD-705, method 2026 guaranteed - High temperature soldering guaranteed : 260°C/10s - Weight: 6 ± 0.5 mg APPLICATIONS - Cell Phone Handsets and Accessories - Notebooks, Desktops, and Servers - Keypads, Side Keys, USB 2.0, LCD Displays - Portable Instrumentation - Touch Panel MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER VALUE SYMBOL 75 TESDL5V0 Peak Pulse Power (tp=8/20μs waveform) TESDL12V PPP 47 PARAMETER SYMBOL TESDL5V0 VRWM TESDL12V TESDL24V TESDL5V0 Reverse Breakdown Voltage TESDL12V IR = 1 mA V(BR) TESDL24V Reverse Leakage Current TESDL5V0 VR = 5 V TESDL12V VR = 12 V TESDL24V VR = 24 V Clamping Voltage TESDL5V0 Clamping Voltage TESDL12V Clamping Voltage TESDL24V TESDL5V0 Junction Capacitance TESDL12V TESDL24V Document Number: DS_S1501022 IPP = 1 A IPP = 5 A IPP = 1 A IPP = 5 A IPP = 1 A IPP = 5 A VR = 0 V f = 1.0 MHz IR VC VC VC KV ±8 TJ, TSTG Junction and Storage Temperature Range Reverse Stand-Off Voltage ± 15 VESD ESD per IEC 61000-4-2 (Contact) W 25 TESDL24V ESD per IEC 61000-4-2 (Air) UNIT o -55 to +150 MIN MAX - 5 - 12 - 24 5.1 - 13 - 25 - - 2 - 9.8 - 15 - 25 - 33 - 47 - 51 C UNIT V V μA V V V 15 CJ 12 pF 10 Version: E15 TESDL5V0/TESDL12V/TESDL24V Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) Fig. 2 Pulse Waveform Fig. 1 Non-Repetitive Peak Pulse Power VS. Pulse Time 110 100 Waveform parameters: tr = 8 μs , td = 20 μs 90 Percent of IPP Peak Pulse Power Ppp (KW) 10 1 0.1 80 70 60 50 td = Ipp / 2 40 30 20 10 0 0.01 0.1 1 10 100 0 1000 5 10 20 25 30 Time (us) Pulse Duration (μs) Fig. 3 Admissible Power Dissipation Curve Fig. 4 Typical Junction Capacitance 120 15 Normalized Capacitance (pF) 100 80 Power Rating (%) 15 60 40 20 TESDL5V0 10 TESDL12V TESDL24V 5 f = 1.0 MHz 0 0 0 20 40 60 80 100 120 140 160 180 Ambient Temperature(oC) 0 5 10 15 20 25 Reverse Voltage (V) Fig. 5 Clamping Voltage VS. Peak Pulse Current 60 Clamping Voltage (V) 50 TESDL24V 40 30 TESDL12V 20 10 Waveform parameters: tr = 8 μs , td = 20 μs TESDL5V0 0 0 1 2 3 4 5 Peak Pulse Current (A) Document Number: DS_S1501022 Version: E15 TESDL5V0/TESDL12V/TESDL24V Taiwan Semiconductor Small Signal Product ORDER INFORMATION (EXAMPLE) TESDL5V0 RWG Green compound code Packing code Part no. PACKAGE OUTLINE DIMENSIONS 1005 DIM. Unit (mm) Unit (inch) Min Max Min Max A 2.40 2.60 0.094 0.102 B 1.10 1.30 0.043 0.051 C 0.70 0.90 0.028 0.035 D 0.50 (Typ.) 0.020 (Typ.) E 1.00 (Typ.) 0.040 (Typ.) Unit (mm) Unit (inch) Typ. Typ. A 0.70 0.028 B 1.30 0.051 C 1.30 0.051 D 2.70 0.106 SUGGEST PAD LAYOUT DIM. Note: The suggested land pattern dimensions have been provided for reference only, as actual pad layouts may vary depending on application. MARKING Part No. Marking TESDL5V0 E05 TESDL12V E12 TESDL24V E24 Document Number: DS_S1501022 Version: E15 TESDL5V0/TESDL12V/TESDL24V Taiwan Semiconductor Small Signal Product APPLICATION INFROMATION - Designed to protect one data, I/O, or power supply line - Designed to protect sensitive electronics from damage or latch-up due to ESD - Designed to replace multilayer varistors (MLVs) in portable applications - Features large cross-sectional area junctions for conducting high transient currents - Offers superior electrical characteristics such as lower clamping voltage and no device degradation when compared to MLVs - The combination of small size and high ESD surge capability makes them ideal for use in portable applications CIRCUIT BOARD LAYOUT RECOMMENDATIONS - Good circuit board layout is critical for the suppression of ESD induced transients - Place the ESD Protection Diode near the input terminals or connectors to restrict transient coupling - Minimize the path length between the ESD Protection Diode and the protected line - Minimize all conductive loops including power and ground loops - The ESD transient return path to ground should be kept as short as possible - Never run critical signals near board edges - Use ground planes whenever possible Document Number: DS_S1501022 Version: E15 TESDL5V0/TESDL12V/TESDL24V Taiwan Semiconductor Small Signal Product Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_S1501022 Version: E15