TSC TESDQ5V0_11

TESDQ5V0
Bi-directional ESD Protection Diode
Small Signal Diode
DFN1006 ( 0402 )
Features
—Meet IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
—Meet IEC61000-4-4 (EFT) rating. 40A (5/50ήs)
—100W Peak Pulse Power per Line (tp=8/20μs)
—Protects one birectional I/O line
—Working Voltage : 5V
—Pb free version, RoHS compliant, and Halogen free
Mechanical Data
Unit (mm)
Dimensions
—Case : DFN1006(0402) 1.0mm x 0.6mm x 0.5mm package,
Unit (inch)
Min
Max
Min
Max
A
0.950
1.050
0.037
0.041
—Molding Compound Flammability Ratting: UL94V-0
B
0.550
0.650
0.022
0.026
—Terminal: Gold plated,solder
C
0.450
0.550
0.018
0.022
D
0.275
0.325
0.011
0.013
E
0.275
0.325
0.011
0.013
molded plastic
per MIL-STD-750, Method 2026 guaranteed
—High temperature soldering guaranteed: 260°C/10s
—Mounting position: Any
—Weight :0.5 mg (approximately)
—Marking Code : M
Applications
Pin Configutation
—Cell Phone Handsets and Accessories
—Notebooks, Desktops, and Servers
—Keypads, Side Keys, LCD Displays
—Portable Instrumentation
Suggested PAD Layout
—Touch panel
Ordering Information
Part No.
Package
Packing
TESDQ5V0
0402
5K / 7" Reel
Packing Code Marking
RJG
M
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Dimensions
Value (in mm)
X
0.354
X1
1.110
Y
0.354
Symbol
Value
Units
Peak Pulse Power (tp=8/20μs waveform)
PPP
100
W
ESD per IEC 61000-4-2 (Air)
ESD per IEC 61000-4-2 (Contact)
VESD
±30
±8
KV
Junction and Storage Temperature Range
TJ, TSTG
.
-55 to + 150
°C
.
Electrical Characteristics
Type Number
Reverse Stand-Off Voltage
Reverse Breakdown Volta
IR=
Reverse Leakage Curren
VR=
IPP=
IPP=
Clamping Voltage
Junction Capacitance
1mA
5V
1A
2A
VR=0V, f=1.0MHz
Min
-
V(BR)
6
-
V
IR
-
1
12.5
20
uA
Vc
CJ
Max
5
Units
V
Symbol
VRWM
10 (Typ.)
V
pF
Notes: 1. The suggested land pattern dimensions have been provided for reference only, as actual pad layouts
may vary despending on application.
Version : C11
TESDQ5V0
Bi-directional ESD Protection Diode
Small Signal Diode
Rating and Characteristic Curves
FIG 1 Admissible Power Derating Curve
FIG 2 Pulse Waveform
110
120
100
Waveform Parameters:
tr = 8μs, td = 20μs
90
Percent of IPP
Power Rating (%)
100
80
60
80
70
e-1
60
50
40
40
td=Ipp/2
30
20
20
10
0
0
0
20
40
60
80
100
120
140
160
0
180
5
FIG 3 Max. Clamping Voltage vs. Peak Pulse
15
20
25
30
FIG 4 Typical Junction Capacitance
25
15
Normalized Capacitance(pF)
Clamping Voltage - Vc(V)
10
Time (us)
Ambient Tempeatature ( oC)
20
10
15
10
Waveform Parameters:
tr = 8μs, td = 20μs
5
5
f = 1.0MHz
0
0
1
2
3
4
5
0
0
1
Peak Pulse Current - Ipp (A)
2
3
4
5
Reverse Voltage (V)
Applications Information
—Designed to protect one data, I/O, or power supply line.
—Designed to protect sensitive electronics from damage or latch-up due to ESD
—Designed to replace multilayer varistors (MLVs) in portable applications
—Features large crosssectional area junctions for conducting high transient currents
—Offers superior electrical characteristics such as lower clamping voltage and no device degradation when compared to
MLVs
—The combination of small size and high ESD surge capability makes them ideal for use in portable applications.
Circuit Board Layout Recommendations
Good circuit board layout is critical for the suppression of ESD induced transients.
—Place the ESD Protection Diode near the input terminals or connectors to restrict transient
—Minimize the path length between the ESD Protection Diode and the protected line.
—Minimize all conductive loops including power and ground loops.
—The ESD transient return path to ground should be kept as short as possible.
—Never run critical signals near board edges.
—Use ground planes whenever possible.
Version : C11
TESDQ5V0
Bi-directional ESD Protection Diode
Small Signal Diode
Carrier & Reel specification
TSC label
Item
Top Cover Tape
Carieer Tape
Any Additional Label (If Required)
P0
D
P1
T
10 Pitches Cumulative
Tolerance on Tape
±2.0mm ( ±0.008")
E
F
K0
Carrier depth
K
1.2 Max.
Sprocket hole
D
1.50 +0.10
Reel outside diameter
A
178 ± 1
Reel inner diameter
D1
50 Min.
Feed hole width
D2
13.0 ± 0.5
Sprocke hole position
E
1.75 ±0.10
Sprocke hole pitch
P0
4.00 ±0.10
Embossment center
P1
2.00 ±0.10
Overall tape thickness
T
0.6 Max.
Tape width
W
8.30 Max.
Reel width
W1
14.4 Max.
D'
Top
Cover Tape
See Note1
K
Dimension(mm)
W
BB0
0
B1
Symbol
For Components
2.0mm X 1.2mm
and Larger
A0
Center Lines
of Cavity
Embossment
For Machine Reference
Only
Including Draft and RADLL
Concentric Around B 0
W1
D
D2
D1
Direction of Feed
Note 1: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be
within 0.05 mm min. to 0.1 mm max. The component cannot rote more than 10o within the determined cavity.
Note 2: If B1 exceeds 4.2 mm(0.165'') for 8 mm embossed tape, the tape may not feed through all tape feeders.
Version : C11