SMD General Purpose Transistor (NPN) PZT3904 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance SOT-223 Mechanical Data Case: SOT-223, Plastic Case Terminals: Weight: Solderable per MIL-STD-202G, Method 208 Approx. 0.04 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description PZT3904 Unit VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current 200 mA PD Total Device Power Dissipation 1.5 W TJ Junction Temperature 150 °C -55 to +150 °C TSTG Storage Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFA (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Conditions TA=25 ˚C Rev. A/CZ Page 1 of 5 SMD General Purpose Transistor (NPN) PZT3904 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Off Characteristics Symbol Description Min. Max. Unit Conditions V(BR)CEO Collector-Emitter Breakdown Voltage (Pulse width ≤380µs, Duty Cycle ≤2.0%) 40 - V IC=1mA, IB=0 V(BR)CBO Collector-Base Breakdown Voltage 60 - V IC=10µA, IE=0 V(BR)EBO Emitter-Base Breakdown Voltage 6.0 - V IE=10µA, IC=0 - 50 nA VBE=3V, VCE=30V Min. Max. Unit Conditions 40 - VCE=1V, IC=0.1mA 70 - VCE=1V, IC=1mA 100 300 VCE=1V, IC=10mA 60 - VCE=1V, IC=50mA 30 - VCE=1V, IC=100mA - 200 - 300 650 850 - 950 - 4.0 pF VCB=5V,IE=0, f=1.0MHz Min. Max. Unit Conditions 300 - MHz VCE=20V, IC=10mA, f=100MHz ICEX Collector-Emitter Cutoff Current On Characteristics Symbol hFE Description D.C. Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage Cob Output Capacitance mV IC=10mA, IB=1mA IC=50mA, IB=5mA mV IC=10mA, IB=1mA IC=50mA, IB=5mA Dynamic Characteristics Symbol fT Description Transition Frequency Rev. A/CZ www.taitroncomponents.com Page 2 of 5 SMD General Purpose Transistor (NPN) PZT3904 Typical Characteristics Curves Fig.1- DC Current Gain DC Current Gain hFE Collector-Emitter Voltage VCE (mV) Fig.2- Collector-Emitter Saturation Voltage Collector Current IC (mA) Collector Current IC (mA) Fig.4- Capacitance Capacitance (pF) Base-Emitter Saturation Voltage VBE (mV) Fig.3- Base-Emitter Saturation Voltage Collector Current IC (mA) Reverse Bias Voltage (V) Rev. A/CZ www.taitroncomponents.com Page 3 of 5 SMD General Purpose Transistor (NPN) PZT3904 Fig.6- Safe Operating Area Cutoff Frequency (MHz) Collector Current IC (mA) Fig.5- Cutoff Frequency Forward Bias Voltage VCE (V) Collector Current IC (mA) Device Marking: PZT3904=3904 Dimensions in mm SOT-223 Rev. A/CZ www.taitroncomponents.com Page 4 of 5 SMD General Purpose Transistor (NPN) PZT3904 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 247-2232 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/CZ www.taitroncomponents.com Page 5 of 5