MMBTA06 SMD General Purpose Transistor (NPN)

SMD General Purpose
Transistor (NPN)
MMBTA06
SMD General Purpose Transistor (NPN)
Features
• NPN Silicon Epitaxial Planar Transistor for
Switching and Amplifier Applications
Mechanical Data
Case:
SOT-23, Plastic Package
Terminals:
Weight:
SOT-23
Solderable per MIL-STD-202G, Method 208
0.008 gram
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
MMBTA06
Unit
Marking Code
1G
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
4.0
V
Collector Current
500
mA
Power Dissipation above 25°C
250
mW
Thermal Resistance from Junction to Ambient
560
° C /W
Junction Temperature
150
°C
-55 to +150
°C
IC
Ptot
R θJA
TJ
TSTG
Storage Temperature Range
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON
Fax: (800)-TAITFA
(800)-824-8766
(800)-824-8329
(661)-257-6060
(661)-257-6415
Conditions
Rev. A/AH 2008-01-10
Page 1 of 3
SMD General Purpose Transistor (NPN)
MMBTA06
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Symbol
hFE
Description
D.C. Current Gain
Min.
Max.
Unit
Conditions
100
-
VCE=1V, IC=10mA
100
-
VCE=1V, IC=100mA
V(BR)CEO
Collector-Emitter Breakdown Voltage
80
-
V
IC=1mA, IB=0
V(BR)EBO
Emitter-Base Breakdown Voltage
4.0
-
V
IE=100µA, IC=0
VCEsat
Collector-Emitter Saturation Voltage
-
0.25
V
IC=100mA, IB=10mA
VBE(on)
Base-Emitter On Voltage
-
1.2
V
IC=100mA, VCE=1.0V
ICEO
Collector-Emitter Cut-off Current
-
0.1
μA
VCE=60V, IB=0
ICBO
Collector-Base Cut-off Current
-
0.1
μA
100
-
MHz
VCB=80V, IE=0
VCE=2V, IC=10mA,
f=100MHz
fT
Current Gain-Bandwidth Product
Dimensions in mm
SOT-23
Rev. A/AH 2008-01-10
www.taitroncomponents.com
Page 2 of 3
SMD General Purpose Transistor (NPN)
MMBTA06
How to contact us:
US HEADQUARTERS
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Tel: (800) TAITRON (800) 247-2232 (661) 257-6060
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Email: [email protected]
Http://www.taitroncomponents.com
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Rev. A/AH 2008-01-10
www.taitroncomponents.com
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