SMD General Purpose Transistor (NPN) BC846/BC847/BC848 SMD General Purpose Transistor (NPN) Features z NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data SOT-23 SOT-23, Plastic Package Case: Solderable per MIL-STD-202G, Method 208 Terminals: 0.008 gram Weight: Marking Information Marking Code BC846A BC846B BC847A BC847B BC847C BC848A BC848B BC848C 1A 1B 1E 1F 1G 1J 1K 1L Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description BC846 BC847 BC848 Unit VCBO Collector-Base Voltage 80 50 30 V VCEO Collector-Emitter Voltage 65 45 30 V VEBO Emitter-Base Voltage 6 6 5 V Conditions IC Collector Current 100 mA Ptot Power Dissipation 330 mW Note 1 RθJA Thermal Resistance, Junction to Ambient 375 ° C/W Note 1 Junction Temperature -55 to +150 °C Storage Temperature Range -55 to +150 °C TJ TSTG Note: 1. Transistor mounted on FR-4 board 8cm2. TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFA (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. B/CH Page 1 of 8 SMD General Purpose Transistor (NPN) BC846/BC847/BC848 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol ICBO hFE VCE(sat) VBE(sat) VBE(on) fT Description Min. Typ. Max. Unit Conditions - - 15 nA VCB=30V, IE=0 - - 5.0 µA BC846/7/8, Suffix ‘A’ - 90 - BC846/7/8, Suffix ‘B’ - 150 - BC847/8, Suffix ‘C’ - 270 - BC846/7/8, Suffix ‘A’ 110 180 220 BC846/7/8, Suffix ‘B’ 200 290 450 BC847/8, Suffix ‘C’ 420 520 800 - - 0.25 Collector-Base Cut-off Current VCB=30V, IE=0, TJ=150° C VCE=5V, IC=10µA D.C. Current Gain Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA V - - 0.6 - 0.7 - Base-Emitter Saturation Voltage IC=100mA, IB=5mA IC=10mA, IB=0.5mA V - 0.9 - 0.58 0.66 0.7 Base-Emitter On Voltage Current Gain-Bandwidth Product VCE=5V, IC=2mA IC=100mA, IB=5mA VCE=5V, IC=2mA V VCE=5V, IC=10mA - - 0.77 100 - - MHz Cob Collector Output Capacitance - - 4.5 pF NF Noise Figure - - 10 dB VCE=5V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz VCE=5V, IC=0.2mA, RG=2KΩ, f=1KHz Rev. B/CH www.taitroncomponents.com Page 2 of 8 SMD General Purpose Transistor (NPN) BC846/BC847/BC848 Typical Characteristics Curves 1. BC846A, BC847A, BC848A Fig.2- DC Current Gain vs. Collector Current DC Current Gain Collector Cut-off Current (nA) Fig.1-Collector Cut-off Current vs. Junction Temperature Junction Temperature (°C) Collector Current (mA) Collector-Emitter Saturation Voltage (mV) Base-Emitter On Voltage (mV) Fig.3-Base-Emitter On Voltage vs. Collector Current Collector Current (mA) Fig.4- Collector-Emitter Saturation Voltage vs. Collector Current Collector Current (mA) Rev. B/CH www.taitroncomponents.com Page 3 of 8 SMD General Purpose Transistor (NPN) Fig.5- Base-Emitter Saturation Voltage vs. Collector Current Fig.6- Typical Capacitances vs. Reverse Voltage Capacitance (pF) Base-Emitter Saturation Voltage (mV) BC846/BC847/BC848 Collector Current (mA) Reverse Voltage (V) 2. BC846B, BC847B, BC848B Fig.2- DC Current Gain vs. Collector Current DC Current Gain Collector Cut-off Current (nA) Fig.1-Collector Cut-off Current vs. Junction Temperature Junction Temperature (°C) Collector Current (mA) Rev. B/CH www.taitroncomponents.com Page 4 of 8 SMD General Purpose Transistor (NPN) Base-Emitter On Voltage (mV) Fig.3-Base-Emitter On Voltage vs. Collector Current Collector-Emitter Saturation Voltage (mV) BC846/BC847/BC848 Collector Current (mA) Collector Current (mA) Fig.5- Base-Emitter Saturation Voltage vs. Collector Current Fig.6- Typical Capacitances vs. Reverse Voltage Capacitance (pF) Base-Emitter Saturation Voltage (mV) Fig.4- Collector-Emitter Saturation Voltage vs. Collector Current Collector Current (mA) Reverse Voltage (V) Rev. B/CH www.taitroncomponents.com Page 5 of 8 SMD General Purpose Transistor (NPN) BC846/BC847/BC848 3. BC847C, BC848C Fig.2- DC Current Gain vs. Collector Current DC Current Gain Collector Cut-off Current (nA) Fig.1-Collector Cut-off Current vs. Junction Temperature Junction Temperature (°C) Collector Current (mA) Collector-Emitter Saturation Voltage (mV) Base-Emitter On Voltage (mV) Fig.3-Base-Emitter On Voltage vs. Collector Current Collector Current (mA) Fig.4- Collector-Emitter Saturation Voltage vs. Collector Current v Collector Current (mA) Rev. B/CH www.taitroncomponents.com Page 6 of 8 SMD General Purpose Transistor (NPN) Fig.5- Base-Emitter Saturation Voltage vs. Collector Current Fig.6- Typical Capacitances vs. Reverse Voltage Capacitance (pF) Base-Emitter Saturation Voltage (mV) BC846/BC847/BC848 Collector Current (mA) Reverse Voltage (V) Dimensions in mm SOT-23 Rev. B/CH www.taitroncomponents.com Page 7 of 8 SMD General Purpose Transistor (NPN) BC846/BC847/BC848 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. B/CH www.taitroncomponents.com Page 8 of 8