SMD General Purpose Transistor (NPN) PZT2222A SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance SOT-223 Mechanical Data SOT-223, Plastic Case Case: Terminals: Weight: Solderable per MIL-STD-202G, Method 208 Approx. 0.04 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description Marking Code PZT2222A Unit GT2222A VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6.0 V IC(DC) Collector Current 600 mA Total Device Dissipation TA=25°C 1.5 W -65 to +150 °C Ptot TJ,TSTG Operating Junction and Storage Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH Page 1 of 5 SMD General Purpose Transistor (NPN) PZT2222A Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol hFE Description D.C. Current Gain Min. Max. Unit Conditions 35 - VCE=10V, IC=0.1mA 50 - VCE=10V, IC=1mA 70 - VCE=10V, IC=10mA 35 - VCE=10V, IC=10mA, TA=-55 ºC 100 300 VCE=10V, IC=150mA 50 - VCE=1V, IC=150mA 40 - VCE=10V, IC=500mA V(BR)CBO Collector-Base Breakdown Voltage 75 - V IC=10µA, IE=0 V(BR)CEO Collector-Emitter Breakdown Voltage 40 - V IC=10mA, IB=0 V(BR)EBO Emitter-Base Breakdown Voltage 6.0 - V IE=10µA, IC=0 - 0.3 - 1.0 0.6 1.2 - 2.0 VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage V V IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA IBEX Base-Emitter Cut-off Current - 20 nA VBE=3V, VCE=60V ICEX Collector-Emitter Cut-off Current - 10 nA VBE=3V, VCE=60V IEBO Emitter-Base Cutoff Current - 100 nA VEB=3V, IC=0 - 10 nA VCB=60V, IE=0 ICBO Collector-Base Cutoff Current - 10 uA 300 - MHz fT Current Gain-Bandwidth Product Cc Output Capacitance - 8.0 pF Ce Input Capacitance - 25 pF 2.0 8.0 hie Input Impedance 0.25 1.25 hre kΩ -4 - 8.0 x 10 - 4.0 x 10 Voltage Feedback Radio -4 VCB=60V, IE=0, TA=125 ºC VCE=20V, IC=20mA, f=100MHz VCB=10V, IE=0, f=1MHz VEB=0.5V, IC=0 f=1MHz VCE=10V, IC=1mA, f=1KHz VCE=10V, IC=10mA, f=1KHz VCE=10V, IC=1mA, f=1KHz VCE=10V, IC=10mA, f=1KHz Rev. A/AH www.taitroncomponents.com Page 2 of 5 SMD General Purpose Transistor (NPN) PZT2222A Symbol Min. Max. 50 300 75 375 5.0 35 25 200 Noise Figure - 4.0 td Delay Time - 10 tr Rise Time - 25 ts Storage Time - 225 tf Fall Time - 60 hfe hoe NF Description Unit Conditions μmhos VCE=10V, IC=1mA, f=1KHz VCE=10V, IC=10mA, f=1KHz VCE=10V, IC=1mA, f=1KHz VCE=10V, IC=10mA, f=1KHz VCE=10V, IC=100µA, f=1KHz VCC=30V, VEB(off)=0.5V, IB(on)=15mA, IC=150mA, Small Signal Current Gain Output Admittance dB nS Figure 1 VCC=30V, IC=150mA IB(on)=IB(off)=15mA, Figure 2 Note: Device mounted on an epoxy printed circuit board 1.575”x1.575”x0.059”; mounting pad for the collector lead min. 0.93”x0.93”. Input Waveform and Test Circuit Rev. A/AH www.taitroncomponents.com Page 3 of 5 SMD General Purpose Transistor (NPN) PZT2222A Dimensions in mm SOT-223 Rev. A/AH www.taitroncomponents.com Page 4 of 5 SMD General Purpose Transistor (NPN) PZT2222A How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/AH www.taitroncomponents.com Page 5 of 5