Small Signal General Purpose Transistors (PNP) BC327/BC328 Small Signal General Purpose Transistors (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance TO-92 Mechanical Data TO-92, Plastic Package Case: Terminals: Weight: Solderable per MIL-STD-202G, Method 208 0.18 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description BC327 BC328 Unit VCEO Collector-Emitter Voltage -45 -25 V VCBO Collector-Base Voltage -50 -30 V VEBO Emitter-Base Voltage -5.0 V Collector Current-Continuous 800 mA Total Device Dissipation Alumina Substrate TA=25°C 625 mW/° C -55 to +150 °C IC Ptot TJ, TSTG Junction and Storage Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH Page 1 of 7 Small Signal General Purpose Transistors (PNP) BC327/BC328 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Off Characteristics BC327 Symbol BC328 Description Min. Max. Min. Max. Unit Conditions V(BR)CEO Collector-Emitter Breakdown Voltage -45 - -25 - V IC=-10mA, IB=0 V(BR)CBO Collector-Base Breakdown Voltage -50 - -30 - V IC=-100µA, IE=0 V(BR)EBO Emitter-Base Breakdown Voltage -5.0 - -5.0 - V IC=-10µA, IC=0 ICEO Collector-Emitter Cut-off Current - -0.2 - -0.2 μA ICBO Collector-Base Cut-off Current IEBO Emitter-Base Cut-off Current VCE=-40V, IB=0 - -0.1 VCB=-45V, IE=0 - -0.1 VCE=-20V, IB=0 - -0.1 μA VCB=-25V, IE=0 - -0.1 μA VEB=-4V, IC=0 Unit Conditions On Characteristics BC327 Symbol hFE1 BC328 Description D.C. Current Gain hFE2 Min. Max. Min. Max. 100 - 630 - VCE=-1V, IC=-100mA 40 - - - VCE=-1V, IC=-300mA VCE(sat) Collector-Emitter Saturation Voltage - -0.7 - -0.7 V IC=-500mA, IB=-5mA VBE(sat) Base-Emitter Saturation Voltage - -1.2 - -1.2 V IC=-500mA, IB=-5mA 260 - 260 - MHz VCE=-5V, IC=-10mA, f=100MHz fT Transition Frequency hFE Classification Classification 16 25 40 hFE1 100~250 160~400 250~630 hFE2 60- 100- 170- Rev. A/AH www.taitroncomponents.com Page 2 of 5 Small Signal General Purpose Transistors (PNP) BC327/BC328 Typical Characteristics Curves Fig.1- Static Characteristic IC, Collector Current (mA) IC, Collector Current (mA) Fig.2- Static Characteristic VCE, Collector-Emitter Voltage (V) VCE, Collector-Emitter Voltage (V) Fig.4- Base-Emitter Saturation Voltage Collector -Emitter Saturation Voltage hFE, DC Current Gain VBE(sat), VCE(sat), Saturation Voltage (V) Fig.3- DC Current Gain IC, Collector Current (mA) IC, Collector Current (mA) Rev. A/AH www.taitroncomponents.com Page 3 of 5 Small Signal General Purpose Transistors (PNP) BC327/BC328 Fig.5- Base–Emitter ON Voltages IC, Collector Current (mA) fT, Gain Bandwidth Product (MHz) Fig.6- Gain Bandwidth Product VBE(sat), Base–Emitter Voltage (V) IC, Collector Current (mA) Dimensions in mm TO-92 Rev. A/AH www.taitroncomponents.com Page 4 of 5 Small Signal General Purpose Transistors (PNP) BC327/BC328 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/AH www.taitroncomponents.com Page 5 of 5