SMD Transistor (NPN) C945 SMD Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor • Low Noise • RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package Terminals: Weight: Solderable per MIL-STD-202G, Method 208 0.008 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description C945 Unit Marking Code CR VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5.0 V Collector Current-Continuous 150 mA C945 Unit Total Device Dissipation FR-5 Board, (Note 1) TA= 25°C 200 mW Derate above 25°C 1.6 mW/° C Thermal Resistance from Junction to Ambient 625 ° C/W -55 to +150 °C IC Thermal Characteristics Symbol Ptot RθJA TJ, TSTG Description Junction and Storage Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH Page 1 of 5 SMD Transistor (NPN) C945 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Off Characteristics C945 Symbol Description Min. Max. Unit Conditions V(BR)CEO Collector-Emitter Breakdown Voltage 50 - V IC=1mA, IB=0 V(BR)CBO Collector-Base Breakdown Voltage 60 - V IC=100µA, IE=0 V(BR)EBO Emitter-Base Breakdown Voltage 5.0 - V IE=100µA, IC=0 ICEO Collector Cut-off Current - 100 nA VCE=60V, IE=0 ICBO Collector Cut-off Current - 100 nA VCB=45V, IE=0 IEBO Emitter Cut-off Current - 100 nA VEB=5V, IC=0 Unit Conditions On Characteristics C945 Symbol Description Min. Max. 130 400 Collector-Emitter Saturation Voltage - 0.3 V IC=100mA, IB=10mA VBEF Base-Emitter Voltage - 1.4 V IE=310mA fT Transition Frequence 150 - MHz VCE=6V, IC=10mA, f=30MHz hFE D.C. Current Gain VCE(sat) VCE=6V, IC=1mA Note: 1. FR-5=1.0x0.75x0.062 in. Classification of hFE Rank L H Range 130-200 200-400 Rev. A/AH www.taitroncomponents.com Page 2 of 5 SMD Transistor (NPN) C945 Typical Characteristics Curves Fig.2- Collector Current vs. Collector to Emitter Voltage IC, Collector Current (mA) PCM, Collector Power Dissipation (mW) Fig.1- Total Power Dissipation vs. Ambient Temperature VCE, Collector to Emitter Voltage (V) TA, Ambient Temperature (° C) Fig.4- DC Current Gain vs. Collector Current hFE, DC Current Gain IC, Collector Current (mA) Fig.3- Collector Current vs. Collector to Emitter Voltage VCE, Collector to Emitter Voltage (V) IC, Collector Current (mA) Rev. A/AH www.taitroncomponents.com Page 3 of 5 SMD Transistor (NPN) C945 Fig.6- DC Current Gain vs. Collector Current hFE, DC Current Gain VBE(sat), Base Saturation Voltage (V) VCE(sat), Collector Saturation Voltage (V) Fig.5- Collector and Base Saturation Voltage vs. Collector Current IE, Emitter Current (mA) IC, Collector Current (mA) Rev. A/AH www.taitroncomponents.com Page 4 of 5 SMD Transistor (NPN) C945 Dimensions in mm SOT-23 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/AH www.taitroncomponents.com Page 5 of 5