WILLAS FM120-M+ 2N7002TTHRU FM1200-M+ SOT-523 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H MOSFET (N-Channel) surface mounted application in order to • Low profile optimize board space. FEATURES • Low power loss, high efficiency. z High density cell design for low RDS(ON) current capability, low forward voltage drop. • High z surge Voltage controlled small signal switch capability. • High for overvoltage protection. • Guardring z Rugged and reliable • Ultra high-speed switching. z High saturation current epitaxial planar chip, metal capability silicon junction. • Silicon z parts meet environmental standards of • Lead-free Pb-Free package is available 0.146(3.7) SOT-523 0.130(3.3) 0.012(0.3) Typ. 3 1. GATE 0.071(1.8) 0.056(1.4) 1 2. SOURCE 3. DRAIN MIL-STD-19500 /228 2 RoHSforproduct for packing packing code suffix "G" code suffix ”G” • RoHS product Halogen free product for packing code suffix "H" Halogen free product for packing code suffix “H” Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. Marking: K72 ina ry Symbol 0.031(0.8) Typ. Parameter Method 2026 Value Drain-Source voltage •V Polarity : Indicated by cathode band DS Position Any • IMounting Drain: Current D •P Weight : Approximated 0.011 gram Power Dissipation D Units 60 V 115 mA 150 mW Dimensions in inches and (millimeters) RθJA Thermal Resistance from Junction to Ambient 833 ℃/W MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS im ℃ Junction Temperature TJ25℃ ambient Ratings at temperature unless otherwise specified. 150 Single phase half wave, 60Hz, resistive of inductive load. Storage Temperature -55~+150 Tstg For capacitive load, derate current by 20% RATINGS ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Pr el ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) 12 13 14 15 Marking Code Maximum Recurrent Peak Reverse Voltage Parameter Maximum RMS Voltage Drain-Source Maximum DC BlockingBreakdown Voltage Symbol PeakGate-body Forward SurgeLeakage Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Zero Gate Voltage Drain Current Typical Thermal Resistance (Note 2) On-state Current Typical JunctionDrain Capacitance (Note 1) Operating Temperature Range Drain-Source On-Resistance Storage Temperature Range CHARACTERISTICS Forward Trans conductance Maximum Average Reverse Current at @T A=25℃ Drain-source on-voltage IDSS VDS=60 V, VGS=0 V CID(ON) J VGS=10 V, VDS=7 V TJ VGS RΘJA RDS(on) TSTG @T A=125℃ 16 60 35 42 50 60 Min 18 80 56 10 100 Typ 60 80 115 150 40 500 120 -55 =10toV,+125 I =500mA 70 100 D 150 200 Volts V nA 80 nA - 65 to +175 VGS=5 V, ID=50mA 140 Volts ±80 Amps Amps ℃/W mA -55 to +150 Volts 105 Unit Max 1.0 1 30 VDS=0 V, VGS=±25 V 120 200 7 PF ℃ Ω ℃ 7 FM130-MH FM140-MH FM150-MH FM160-MH80 FM180-MH FM1100-MH FM1150-MH FM1200-MH 500 ms gfs FM120-MH V, ID=200mA VDS=10 SYMBOL UNIT V IRDS(on) VSD Diode Forward Voltage 1- Measured 1 MHZ and applied reverse voltage of 4.0 VDC. Input at Capacitance 2- Thermal Resistance From Junction to Ambient 50 conditions VDS=VGS, ID=250 µA NOTES: Test 40 IOth(GS) V lGSS IFSM VF Maximum Forward Voltage at 1.0A DC 30 14 21 28 VDC V, ID=250 (BR)DSS 20VGS=0 30 40µA V Rated DC Blocking Voltage 20 VRMS Voltage Maximum Average Forward Rectified Current Gate-Threshold Voltage VRRM 0.50 VGS=10V, ID=500mA VGS=5V, ID=50mA IS=115mA, VGS=0 V 0.70 0.85 0.5 10 0.55 0.9 3.75 Coss Reverse Transfer Capacitance Crss V 0.375 V 1.2 V Volts mAmps 50 Ciss Output Capacitance 0.92 VDS=25V, VGS=0V, f=1MHz 25 pF 5 SWITCHING TIME Turn-on Time td(on) Turn-off Time td(off) 2012-06 2012-0 VDD=25 V, RL=50Ω ID=500mA,VGEN=10 V RG=25 Ω 20 40 ns WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2N7002TTHRU FM1200-M+ SOT-523 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Outline Drawing SOT-523 optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 .004(0.10)MIN. • RoHS product for packing code suffix "G" • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .067(1.70) .059(1.50) 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) ry Method 2026 .035(0.90) .028(0.70) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .069(1.75) .057(1.45) Halogen free product for packing code suffix "H" Mechanical data 0.031(0.8) Typ. ina Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Pr eli m RATINGS Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS VDC Maximum DC Blocking Voltage .043(1.10) .035(0.90) Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ .004(0.10)MAX. Storage Temperature Range CHARACTERISTICS Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ 30 40 14 21 28 35 42 56 20 30 40 50 60 80 115 150 120 200 Volts 70 105 140 Volts 100 150 200 Volts 1.0 30 40 120 -55 to +125 Amp Amp ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC 16 60 .008(0.20) 18 10 80 100 .004(0.10) 15 50 IO IFSM RΘJA Typical Thermal Resistance (Note 2) .014(0.35) .010(0.25) 13 14 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI IR .014(0.35) NOTES: .006(0.15) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.50 .035(0.90) .028(0.70) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 0.70 0.85 0.9 0.5 0.92 Volts mAm 10 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-0 WILLAS ELECTRONIC CORP. Rev.D WILLAS ELECTRONIC CORP. SOT-523 Plastic-Encapsulate MOSFETS 2N7002T Ordering Information: Device PN 2N7002T ‐T(1)G(2)‐WS Note: (1) Packing code, Tape & Reel Packing Tape&Reel: 3 Kpcs/Reel (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ina ry ***Disclaimer*** Pr el im WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-0 WILLAS ELECTRONIC CORP.