MBR20150FCT

WILLAS
FM120-M+
THRU
T
MBR20150FC
FM1200-M+
20.0A SCHOTTKY BARRIER RECTIFIERS 150V
1.0A SURFACE MOUNT SCHOTTKY
BARRIERPACKAGE
RECTIFIERS -20V- 200V
ITO-220
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
High
Junction
Temperature Capability
surge
capability.
••High
for
overvoltage
••Guardring
Pb-Free package is protection.
available
• Ultra high-speed switching.
RoHS product for packing code suffix ”G”
• Silicon epitaxial planar chip, metal silicon junction.
Halogen
freemeet
product
for packing
code suffix
“H”
parts
environmental
standards
of
• Lead-free
Low Leakage/228
Current
•MIL-STD-19500
product
for packing
"G"
••RoHS
Epoxy
meets
UL 94code
V-0suffix
flammability
rating
Halogen free product for packing code suffix "H"
• Moisture Sensitivity Level 1
ITO-220
0.146(3.7)
0.130(3.3)
Features
0.012(0.3) Typ.
.406(10.30) .138(3.50)
.118(3.00)
0.071(1.8)
.382(9.70)
0.056(1.4)
.114(2.90)
.098(2.50)
Mechanical
data
• Marking:type number
.642(16.30)
0.040(1.0)
0.024(0.6)
.571(14.50)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
0.031(0.8) Typ.
,
• Terminals :Plated terminals, solderable per MIL-STD-750
.171(4.35)
• Operating
J unction
Method
2026 Temperature : 150°C
.067(1.70)
.138(3.50)
• Storage
Temperature:
5 0°C to +150°C
Dimensions in inches and (millimeters)
• Polarity
: Indicated
by cathode-band
.039(1.00)
• Per d iode Thermal Resistance 2.2°C/W Junction to Case
: Any
• Mounting
• TotalPosition
Thermal
Resistance 1.3°C/W Junction to Case
.035(1.00)
• Weight : Approximated 0.011 gram
.022(0.55)
Maximum
Maximum Maximum
Catalog
Re
current
RMS
DC
MAX.(1.80)
MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
Number
Peak Reverse
Voltage
Blocking
.108(2.75)
Ratings at 25℃ ambient temperature unless otherwise specified.
Voltage
Voltage
Single phaseMBR
half wave,
60Hz,
resistive
of
inductive
load.
.091(2.30)
20150 FCT
150 V
105V
150 V
Maximum Ratings
For capacitive load, derate current by 20%
RATINGS
FM1100-MH FM1150-MH FM1200-MH UNIT
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH .189(4.80)
Marking Code
12
13 Specified
14
15
Electrical Characteristics @ 25°C Unless Otherwise
Maximum Recurrent
Peak
Reverse Voltage
Average
Forward
Maximum RMS
Voltage
Current
IF(AV)
Maximum DCPeak
Blocking
Voltage
Forward
Surge
IFSM
Current
Maximum Average
Forward Rectified Current
Maximum
Peak ForwardInstantaneous
Surge Current 8.3 ms single half sine-wave
Voltage
superimposedForward
on rated load
(JEDEC method)
VF
Typical ThermalMBR20150FCT
Resistance (Note 2)
Typical Junction Capacitance (Note 1)
VF
Operating Temperature Range
Storage Temperature Range
VRRM20 A 20
VRMS
14
VDC180A 20
IO
IFSM
.92V
RΘJA
CJ
TJ.75V
TSTG
30
40
50
16
60
18
80
21
28
35
42
56
8.3ms,
30 half 40
sine wave
50
60
80
TC = 155 °C
.169(4.30)
10
115
100 .134(3.40)
150
70
100
CHARACTERISTICS
Maximum
Reverse Current At
Rated DC Blocking Voltage
Rated DC Blocking
Voltage
NOTES:
Volts
200
Volts
IFM = 10A
TJ = 25°C
-55
to
+125
I FM = 10A
TJ = 125°C
Amps
Amps
40
120
- 65 to +175
℃/W
PF
-55 to +150
.114(2.90)
℃
℃
.098(2.50)
FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH.560(14.22)
VF
IR
Maximum Average Reverse Current at @T A=25℃
150
Volts
140
1.0
30
Maximum Forward Voltage at 1.0A DC
105
.110(2.54)
120
200
@T A=125℃
IR25 µ A
5m A
0.50
TJ = 25°C
TJ = 125°C
0.70
0.5
10
0.85
.492(12.50)
0.9
0.92
Volts
.031(0.80)
.015(0.38)
mAmps
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
2012-06
2012-1
Dimensions in inches and (millimeters)
WILLAS
WILLASELECTRONIC
ELECTRONICCORP.
CORP.
WILLAS
FM120-M+
THRU
MBR20150FCT
FM1200-M+
20.0A SCHOTTKY BARRIER RECTIFIERS 150V
1.0A SURFACE MOUNT SCHOTTKY
BARRIERPACKAGE
RECTIFIERS -20V- 200V
ITO-220
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
design, excellent power dissipation offers
• Batch
Fig. process
1: Average
forward power dissipation versus
better reverse leakage current and thermal resistance.
average forward current (per diode).
• Low profile surface mounted application in order to
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5, perSOD-123H
diode).
optimize board space.
PF(av)(W)
loss, high efficiency.
• Low power
voltage drop.
• High
10 current capability, low forward
δ = 0.1 δ = 0.2
δ = 0.5
• High
9 surge capability.δ = 0.05
8
• Guardring for overvoltage protection.
7 high-speed switching.
• Ultra
δ=1
6
epitaxial planar chip, metal silicon junction.
• Silicon
5
parts meet environmental standards of
• Lead-free
0.146(3.7)
0.130(3.3)
IF(av)(A)
0.012(0.3) Typ.
12
Rth(j-a)=Rth(j-c)
10
0.071(1.8)
0.056(1.4)
8
6
4
MIL-STD-19500
/228
3 product for packing code suffix "G"
• RoHS
T
2
Halogen
free product for packing code suffix "H"
1
Mechanical
data IF(av) (A)
tp
δ=tp/T
0
0 : UL94-V0
1 2 3rated
4 flame
5 retardant
6 7 8 9 10 11 12
• Epoxy
Rth(j-a)=15°C/W
4
T
2
0
• Case : Molded plastic, SOD-123H
Fig. 3: Non repetitive surge peak forward current ,
• Terminals
:Plated terminals,
pervalues,
MIL-STD-750
versus overload
durationsolderable
(maximum
per
diode). Method 2026
• Polarity : Indicated by cathode band
IM(A) Position : Any
• Mounting
150
• Weight : Approximated 0.011 gram
δ=tp/T
0
Tamb(°C)
tp
0.040(1.0)
25
50
75
100
125
0.024(0.6) 175
150
0.031(0.8) Typ.
0.031(0.8) Typ.
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
Dimensions in inches and (millimeters)
Zth(j-c)/Rth(j-c)
1.0
125
0.8
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
100
Ratings at 25℃ ambient temperature unless otherwise specified.
Tc=50°C
75 half wave, 60Hz, resistive of inductive load.
Single phase
0.6
For capacitive
50 load, derate current by 20%
0.4
IM
RATINGS
25
t
t(s)
Marking Code
δ=0.5
0
Maximum Recurrent
Peak
Reverse
Voltage
1E-3
1E-2
Maximum RMS Voltage
Tc=75°C
1E-1 VRRM
VRMS
VDC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
12
20
1E+0
15
50
14
13
14
300.0
40
1E-3
21
28
20
30
50
Operating Temperature Range
Tj=175°C
TJ
Storage Temperature Range
Tj=150°C
TSTG
CHARACTERISTICS
1E+2
80
115
150
1E+0
105
120
200
Volts
140
Volts
150
200
Volts
tp
70
100
Fig. 6: Junction capacitance
1.0 versus reverse voltage
applied (typical values, per
diode).
Amps
40
120
C(pF)
Amps
1000
-55 to +125
℃/W
PF
-55 to +150
Tj=25°C
F=1MHz
℃
- 65 to +175
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
0.70
25
50
75
100
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
125
150
10
1
2
5
10
0.92
Volts
mAmps
10
VR(V)
VR(V)
0
0.9
0.85
0.5
IR
@TTj=25°C
A=125℃
Rated DC Blocking
1E+0 Voltage
100
0.50
VF
Tj=100°C
1E+1 Reverse Current at @T A=25℃
Maximum Average
1E-1
60
10
100
δ=tp/T
Tj=125°C
Maximum Forward Voltage at 1.0A DC
NOTES:
42
18
80
1E-1
56
30
CJ
1E+4
35
40
1E-2
16 tp(s)
60
IFSM
1E+5Capacitance (Note 1)
Typical Junction
Single pulse
RΘJA
IR(µA) (Note 2)
Typical Thermal Resistance
1E+3
T
SYMBOL Tc=125°C
FM120-MH FM130-MH
0.2 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Fig. 5:
Reverse
leakage
reverse
Maximum Average
Forward
Rectified
Current current versus
IO
voltage applied (typical values, per diode).
δ = 0.2
δ = 0.1
Maximum DC Blocking Voltage
δ = 0.5
20
50
100
200
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS
WILLASELECTRONIC
ELECTRONICCORP.
CORP.
WILLAS
FM120-M+
THRU
T
MBR20150FC
FM1200-M+
20.0A SCHOTTKY BARRIER RECTIFIERS 150V
1.0A SURFACE MOUNT SCHOTTKY
BARRIERPACKAGE
RECTIFIERS -20V- 200V
ITO-220
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize
space. voltage drop versus forward
Fig. 7:board
Forward
power
loss,
high efficiency.
• Low
current (maximum
values, per diode).
• High current capability, low forward voltage drop.
• High surge capability.
for overvoltage protection.
• Guardring
IFM(A)
high-speed switching.
• Ultra
100.0
• Silicon epitaxial planar chip, metal silicon junction.
Tj=125°C
environmental standards of
• Lead-free parts meet
Typical values
•
Fig. 8: Thermal resistance0.146(3.7)
junction to ambient versus
0.130(3.3) printed circuit board,
copper surface under tab (Epoxy
0.012(0.3) Typ.
copper thickness: 35µm) (STPS20150CG only).
Rth(j-a) (°C/W)
70
MIL-STD-19500 /228
10.0
RoHS
product for packing code suffix "G"
Tj=125°C
Tj=25°C
Halogen free product
for packing code
suffix "H"
60
50
40
Mechanical data
30
1.0
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
VFM(V)
,
• Terminals
0.1 :Plated terminals, solderable per MIL-STD-750
0.0
0.2 0.4 0.6
Method 2026
0.8
1.0
1.2
0.071(1.8)
0.056(1.4)
80
1.4
1.6
0.040(1.0)
0.024(0.6)
20
0.031(0.8) Typ.
10
0
1.8
0
2
4
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.031(0.8) Typ.
S(cm²)
6
8
10
12
14
16
18
20
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Volts
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
1.0
30
40
120
-55 to +125
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
10
0.9
0.92
Volts
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC
WILLAS
ELECTRONICCORP.
CORP.