WILLAS FM120-M+ THRU T MBR20150FC FM1200-M+ 20.0A SCHOTTKY BARRIER RECTIFIERS 150V 1.0A SURFACE MOUNT SCHOTTKY BARRIERPACKAGE RECTIFIERS -20V- 200V ITO-220 Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. High Junction Temperature Capability surge capability. ••High for overvoltage ••Guardring Pb-Free package is protection. available • Ultra high-speed switching. RoHS product for packing code suffix ”G” • Silicon epitaxial planar chip, metal silicon junction. Halogen freemeet product for packing code suffix “H” parts environmental standards of • Lead-free Low Leakage/228 Current •MIL-STD-19500 product for packing "G" ••RoHS Epoxy meets UL 94code V-0suffix flammability rating Halogen free product for packing code suffix "H" • Moisture Sensitivity Level 1 ITO-220 0.146(3.7) 0.130(3.3) Features 0.012(0.3) Typ. .406(10.30) .138(3.50) .118(3.00) 0.071(1.8) .382(9.70) 0.056(1.4) .114(2.90) .098(2.50) Mechanical data • Marking:type number .642(16.30) 0.040(1.0) 0.024(0.6) .571(14.50) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. 0.031(0.8) Typ. , • Terminals :Plated terminals, solderable per MIL-STD-750 .171(4.35) • Operating J unction Method 2026 Temperature : 150°C .067(1.70) .138(3.50) • Storage Temperature: 5 0°C to +150°C Dimensions in inches and (millimeters) • Polarity : Indicated by cathode-band .039(1.00) • Per d iode Thermal Resistance 2.2°C/W Junction to Case : Any • Mounting • TotalPosition Thermal Resistance 1.3°C/W Junction to Case .035(1.00) • Weight : Approximated 0.011 gram .022(0.55) Maximum Maximum Maximum Catalog Re current RMS DC MAX.(1.80) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Number Peak Reverse Voltage Blocking .108(2.75) Ratings at 25℃ ambient temperature unless otherwise specified. Voltage Voltage Single phaseMBR half wave, 60Hz, resistive of inductive load. .091(2.30) 20150 FCT 150 V 105V 150 V Maximum Ratings For capacitive load, derate current by 20% RATINGS FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH .189(4.80) Marking Code 12 13 Specified 14 15 Electrical Characteristics @ 25°C Unless Otherwise Maximum Recurrent Peak Reverse Voltage Average Forward Maximum RMS Voltage Current IF(AV) Maximum DCPeak Blocking Voltage Forward Surge IFSM Current Maximum Average Forward Rectified Current Maximum Peak ForwardInstantaneous Surge Current 8.3 ms single half sine-wave Voltage superimposedForward on rated load (JEDEC method) VF Typical ThermalMBR20150FCT Resistance (Note 2) Typical Junction Capacitance (Note 1) VF Operating Temperature Range Storage Temperature Range VRRM20 A 20 VRMS 14 VDC180A 20 IO IFSM .92V RΘJA CJ TJ.75V TSTG 30 40 50 16 60 18 80 21 28 35 42 56 8.3ms, 30 half 40 sine wave 50 60 80 TC = 155 °C .169(4.30) 10 115 100 .134(3.40) 150 70 100 CHARACTERISTICS Maximum Reverse Current At Rated DC Blocking Voltage Rated DC Blocking Voltage NOTES: Volts 200 Volts IFM = 10A TJ = 25°C -55 to +125 I FM = 10A TJ = 125°C Amps Amps 40 120 - 65 to +175 ℃/W PF -55 to +150 .114(2.90) ℃ ℃ .098(2.50) FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH.560(14.22) VF IR Maximum Average Reverse Current at @T A=25℃ 150 Volts 140 1.0 30 Maximum Forward Voltage at 1.0A DC 105 .110(2.54) 120 200 @T A=125℃ IR25 µ A 5m A 0.50 TJ = 25°C TJ = 125°C 0.70 0.5 10 0.85 .492(12.50) 0.9 0.92 Volts .031(0.80) .015(0.38) mAmps 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7. 2012-06 2012-1 Dimensions in inches and (millimeters) WILLAS WILLASELECTRONIC ELECTRONICCORP. CORP. WILLAS FM120-M+ THRU MBR20150FCT FM1200-M+ 20.0A SCHOTTKY BARRIER RECTIFIERS 150V 1.0A SURFACE MOUNT SCHOTTKY BARRIERPACKAGE RECTIFIERS -20V- 200V ITO-220 Pb Free Product SOD-123+ PACKAGE Package outline Features design, excellent power dissipation offers • Batch Fig. process 1: Average forward power dissipation versus better reverse leakage current and thermal resistance. average forward current (per diode). • Low profile surface mounted application in order to Fig. 2: Average forward current versus ambient temperature (δ = 0.5, perSOD-123H diode). optimize board space. PF(av)(W) loss, high efficiency. • Low power voltage drop. • High 10 current capability, low forward δ = 0.1 δ = 0.2 δ = 0.5 • High 9 surge capability.δ = 0.05 8 • Guardring for overvoltage protection. 7 high-speed switching. • Ultra δ=1 6 epitaxial planar chip, metal silicon junction. • Silicon 5 parts meet environmental standards of • Lead-free 0.146(3.7) 0.130(3.3) IF(av)(A) 0.012(0.3) Typ. 12 Rth(j-a)=Rth(j-c) 10 0.071(1.8) 0.056(1.4) 8 6 4 MIL-STD-19500 /228 3 product for packing code suffix "G" • RoHS T 2 Halogen free product for packing code suffix "H" 1 Mechanical data IF(av) (A) tp δ=tp/T 0 0 : UL94-V0 1 2 3rated 4 flame 5 retardant 6 7 8 9 10 11 12 • Epoxy Rth(j-a)=15°C/W 4 T 2 0 • Case : Molded plastic, SOD-123H Fig. 3: Non repetitive surge peak forward current , • Terminals :Plated terminals, pervalues, MIL-STD-750 versus overload durationsolderable (maximum per diode). Method 2026 • Polarity : Indicated by cathode band IM(A) Position : Any • Mounting 150 • Weight : Approximated 0.011 gram δ=tp/T 0 Tamb(°C) tp 0.040(1.0) 25 50 75 100 125 0.024(0.6) 175 150 0.031(0.8) Typ. 0.031(0.8) Typ. Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration (per diode). Dimensions in inches and (millimeters) Zth(j-c)/Rth(j-c) 1.0 125 0.8 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 100 Ratings at 25℃ ambient temperature unless otherwise specified. Tc=50°C 75 half wave, 60Hz, resistive of inductive load. Single phase 0.6 For capacitive 50 load, derate current by 20% 0.4 IM RATINGS 25 t t(s) Marking Code δ=0.5 0 Maximum Recurrent Peak Reverse Voltage 1E-3 1E-2 Maximum RMS Voltage Tc=75°C 1E-1 VRRM VRMS VDC Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 12 20 1E+0 15 50 14 13 14 300.0 40 1E-3 21 28 20 30 50 Operating Temperature Range Tj=175°C TJ Storage Temperature Range Tj=150°C TSTG CHARACTERISTICS 1E+2 80 115 150 1E+0 105 120 200 Volts 140 Volts 150 200 Volts tp 70 100 Fig. 6: Junction capacitance 1.0 versus reverse voltage applied (typical values, per diode). Amps 40 120 C(pF) Amps 1000 -55 to +125 ℃/W PF -55 to +150 Tj=25°C F=1MHz ℃ - 65 to +175 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 0.70 25 50 75 100 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 125 150 10 1 2 5 10 0.92 Volts mAmps 10 VR(V) VR(V) 0 0.9 0.85 0.5 IR @TTj=25°C A=125℃ Rated DC Blocking 1E+0 Voltage 100 0.50 VF Tj=100°C 1E+1 Reverse Current at @T A=25℃ Maximum Average 1E-1 60 10 100 δ=tp/T Tj=125°C Maximum Forward Voltage at 1.0A DC NOTES: 42 18 80 1E-1 56 30 CJ 1E+4 35 40 1E-2 16 tp(s) 60 IFSM 1E+5Capacitance (Note 1) Typical Junction Single pulse RΘJA IR(µA) (Note 2) Typical Thermal Resistance 1E+3 T SYMBOL Tc=125°C FM120-MH FM130-MH 0.2 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Fig. 5: Reverse leakage reverse Maximum Average Forward Rectified Current current versus IO voltage applied (typical values, per diode). δ = 0.2 δ = 0.1 Maximum DC Blocking Voltage δ = 0.5 20 50 100 200 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS WILLASELECTRONIC ELECTRONICCORP. CORP. WILLAS FM120-M+ THRU T MBR20150FC FM1200-M+ 20.0A SCHOTTKY BARRIER RECTIFIERS 150V 1.0A SURFACE MOUNT SCHOTTKY BARRIERPACKAGE RECTIFIERS -20V- 200V ITO-220 Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize space. voltage drop versus forward Fig. 7:board Forward power loss, high efficiency. • Low current (maximum values, per diode). • High current capability, low forward voltage drop. • High surge capability. for overvoltage protection. • Guardring IFM(A) high-speed switching. • Ultra 100.0 • Silicon epitaxial planar chip, metal silicon junction. Tj=125°C environmental standards of • Lead-free parts meet Typical values • Fig. 8: Thermal resistance0.146(3.7) junction to ambient versus 0.130(3.3) printed circuit board, copper surface under tab (Epoxy 0.012(0.3) Typ. copper thickness: 35µm) (STPS20150CG only). Rth(j-a) (°C/W) 70 MIL-STD-19500 /228 10.0 RoHS product for packing code suffix "G" Tj=125°C Tj=25°C Halogen free product for packing code suffix "H" 60 50 40 Mechanical data 30 1.0 • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H VFM(V) , • Terminals 0.1 :Plated terminals, solderable per MIL-STD-750 0.0 0.2 0.4 0.6 Method 2026 0.8 1.0 1.2 0.071(1.8) 0.056(1.4) 80 1.4 1.6 0.040(1.0) 0.024(0.6) 20 0.031(0.8) Typ. 10 0 1.8 0 2 4 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.031(0.8) Typ. S(cm²) 6 8 10 12 14 16 18 20 Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC WILLAS ELECTRONICCORP. CORP.