WILLAS FM120-M+ THRU SFM18-FN3 FM1200-M+ 1.0A SURFACE MOUNT SUPER FAST RECTIFIERS - 600V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V mFN-323 PACKAGE Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. mFN-323 . 0.044(1.10) 0.036(0.90) “H” • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 0.071(1.8) 0.056(1.4) 0.017(0.43) 0.013(0.33) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.026(0.66) 0.022(0.56) Polarity: Color banddata denotes cathode end • Mechanical 0.012(0.3) Typ. Package outline 0.031(0.8) Typ. ry MIL-STD-19500 /228 productforfor packing ”G” RoHS product packing codecode suffix suffix "G" •RoHS Halogen free product for packing code suffix "H" Halogen free product for packing code suffix 0.146(3.7) 0.130(3.3) 0.056(1.40) 0.048(1.20) • Low power loss, high efficiency. Features • High current capability, low forward voltage drop. Highprofile surge capability. • •Low surface mounted application in order to Guardringboard for overvoltage •optimize space. protection. UltraFlat high-speed switching. • •mini No-Lead Package. Silicon epitaxial planar metal silicon junction. • • Glass passivated chipchip, junction. Lead-free parts meet environmental standards of • • Pb-Free package is available 0.103(2.60) 0.095(2.40) Mechanical • Polarity : Indicateddata by cathode band Dimensions in inches and (millimeters) 0.026(0.65) 0.014(0.35) ina • Epoxy:UL94-V0 : Any flame retardant • Mounting Positionrated • Weight : Approximated 0.011 gram • Case : mFN-323 • Mounting Position RATINGS : Any MAXIMUM AND ELECTRICAL CHARACTERISTICS RATINGS Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 12 13 14 15 16 18 10 115 o 60 20 30 40 50 80 100 150 Maximum ratings and Characteristics (AT T A=25 C unless otherwise noted) 14 21 28 35 42 56 70 105 Maximum RMS Voltage VRMS Symbol MIN. TYP. MAX. PARAMETER CONDITIONS Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 VDC 1.0 IO See Fig.2 Forward rectified current Maximum Average Forward Rectified Current IO 1.0 8.3ms single half sine-wave superimposed on Forward surge current I FSM 30 Peak Forward Surge Current 8.3 ms single half sine-wave rate loadIFSM (JEDEC methode) 30 superimposed on rated load (JEDEC method) IR Reverse current V R = V RRM T J = 25 OC 5.0 Typical Thermal Resistance (Note 2) ΘJA 25 C40 Typical Diode junction capacitance f=1MHz Rand applied 4V DC reverse voltage J 120 Typical Junction Capacitance (Note 1) CJ Storage temperature -65 -55 to +150 +175 T STG -55 to +125 Operating Temperature Range TJ Maximum Recurrent Peak Reverse Voltage Dimensions in inches and (millimeters) Pr eli m Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% VRRM Electrical Storage Temperature Range 120 200 Volts Volts 140 UNIT 200 A Volts Amps A Amps μA pF O C PF ℃ - 65 to +175 TSTG ℃/W ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ *1 *4 *3 VF V RMS*2 VR V RRM 1- Measured at 1 MHZ and(V) applied reverse 4.0 VDC. (V) (V) voltage of(V) 600 2012-0 0.85 0.9 0.92 Operating temperature T J, ( OC) *3 Maximun DC Blocking Voltage 35 -55 to +150 *4 Maximum forward voltage@I F =1.0A,T J =25°C 1.70 Volts mAmps *2 Maximun RMS voltage *5 t rr (ns) Note 1. Reverse recovery time test condition, I F =0.5A, I R =1.0A, I RR =0.25A 2012-06 0.70 0.5 *1 Maximun Repetitive peak reverse voltage 10 IR NOTES: SYMBOLS 2- Thermal Resistance From to Ambient SFM18-FN3 600 Junction420 0.50 *5 Maximum Reverse recovery time, note 1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SFM18-FN3 FM1200-M+ 1.0A SURFACE MOUNT SUPER FAST RECTIFIERS - 600V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V mFN-323 PACKAGE Pb Free Product SOD-123+ PACKAGE Package outline Rating and characteristic curves Features • Batch process design, excellent power dissipation offers FIG.2-TYPICAL FORWARD CURRENT SOD-123H DERATING CURVE Mechanical data AVERAGE FORWARD CURRENT,(A) INSTANTANEOUS FORWARD CURRENT,(A) FIG.1-TYPICAL FORWARD better reverse leakage current and thermal resistance. mounted application in order to • Low profile surfaceCHARACTERISTICS optimize 10board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. 1.0 switching. • Ultra high-speed • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 for packing code suffix "G" • RoHS product .1 Halogen free product for packing code suffix "H" 1.2 0.146(3.7) 0.130(3.3) 0.8 0.071(1.8) 0.056(1.4) 0.6 0.4 0.2 0 0 25 TJ=25 C RATINGS Dimensions in inches and (millimeters) 40 (approx.) Maximum Recurrent Peak Reverse Voltage 12 PULSE GENERATOR 20 VRRM (NOTE 2) Maximum RMS Voltage VRMS D.U.T. 25Vdc ( ) Maximum DC Blocking 1W NONINDUCTIVE Voltage OSCILLISCOPE (NOTE 1) VDC (+) 13 0 30 1 28 35 20 30 40 50 CJ Typical Junction Capacitance (Note 1) Operating Temperature +0.5A Range Storage Temperature Range 0 CHARACTERISTICS | | | | | | | | TJ TSTG Maximum Average Reverse Current at @T A=25℃ NOTES: @T A=125℃ -1.0A 18 80 10 10 100 50 NUMBER 42 OF CYCLES 56 AT 60Hz 70 60 80 100 115 150 100 120 200 Volts 105 140 Volts 150 200 Volts 70 60 Amps 40 120 -55 to +125 Amps ℃/W PF -55 to +150 ℃ - 65 to +175 50 ℃ 40 IR 0.50 30 0.70 0.9 0.85 0.92 0.5 mAmps 10 20 Volts 10 1cm 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. SET TIME BASE FOR 16 60 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF -0.25A Maximum Forward Voltage at 1.0A DC 5 1.0 FIG.5-TYPICAL JUNCTION CAPACITANCE 30 JUNCTION CAPACITANCE,(pF) RΘJA trr 15 50 21 superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) 14 40 14 IO 2. Rise Time= Source 50 ohms. Peak Forward Surge Current 8.310ns ms max., single halfImpedance= sine-wave IFSM Rated DC Blocking Voltage JEDEC method 10 NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. Sine Wave 20 Maximum Average Forward Rectified Current 8.3ms Single Half TJ=25 C SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT ( ) (+) Marking Code 175 ry 50 Pr eli m 150 0.031(0.8) Typ. 30 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RECOVERY TIME CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. W W of inductive load. 10 Single phase 50 half wave, 60Hz, resistive NONINDUCTIVE NONINDUCTIVE For capacitive load, derate current by 20% 125 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT ina FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE 100 0.031(0.8) Typ. PEAK FORWAARD SURGE CURRENT,(A) 1.8 75 0.024(0.6) Method 2026 1.6 50 AMBIENT TEMPERATURE (°C) 0.040(1.0) Pulse Width 300us • Epoxy : UL94-V0 rated flame retardant 1% Duty Cycle Molded plastic, SOD-123H • Case :.01 , • Terminals :Plated terminals, solderable per MIL-STD-750 • Polarity : Indicated by cathode band .001 :.8Any 1.0 1.2 1.4 • Mounting.4Position .6 FORWARD VOLTAGE,(V) • Weight : Approximated 0.011 gram 0.012(0.3) Typ. 1.0 2- Thermal Resistance From Junction to Ambient50 / 10ns / cm 0 .01 .05 .1 .5 1 5 10 50 100 REVERSE VOLTAGE,(V) 2012-06 2012-0 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SFM18-FN3 FM1200-M+ 1.0A SURFACE MOUNT SUPER FAST RECTIFIERS - 600V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V mFN-323 PACKAGE Pb Free Product SOD-123+ PACKAGE Package outline Features Pinning information design, excellent power dissipation offers • Batch process better reverse leakage current and thermal resistance. SOD-123H • Low profile surface Pin mounted application in order toSimplified outline optimize board space. • Low power loss, high efficiency. current capability, low forward voltage drop. • HighPin1 cathode surge capability. • HighPin2 1 anode • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Marking Symbol 0.146(3.7) 0.130(3.3) 2 0.012(0.3) Typ. 1 2 0.071(1.8) 0.056(1.4) Mechanical data Type number rated flame retardant Marking code • Epoxy : UL94-V0 plastic, SOD-123H • Case : Molded SFM18-FN3 S6 , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.031(0.8) Typ. ry 0.031(0.8) Typ. ina Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Pr eli m Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Suggested solder pad layout SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS Marking Code VRRM Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage VRMS Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 12 20 Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts 14 21 28 35 42 56 70 105 140 Volts (1.90) 20 0.075 30 40 50 60 80 100 150 200 Volts 1.0 30 (0.70) 0.028 RΘJA Typical Thermal Resistance (Note 2) 13 30 -55 to +125 40 120 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS Maximum Forward Voltage at 1.0A DC SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT (0.50) VF Maximum Average Reverse Current at @T A=25℃ 0.020 Rated DC Blocking Voltage @T A=125℃ IR (0.90) 0.036 0.50 (0.50) 0.020 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Dimensions 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 in inches and (millimeters) WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.