WILLAS FM120-M+ SP840 THRUTHRU 8.0A SCHOTTKY BARRIER RECTIFIERS -40V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V ITO-220A PACKAGE FM1200-M+ SP8200 Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. Mechanical loss, high efficiency. • Low powerDate ITO-220A 0.146(3.7) 0.130(3.3) current capability, low forward voltage drop. • HighITO-220A ‧Cases: • High surge capability. ‧Case Material: Plastic. UL Flammabilityy forMolded overvoltage protection. • Guardring Ultra high-speed switching. • Classification Rating 94V-0 • Silicon epitaxial planar chip, metal silicon junction. ‧Terminals: (Tin Finish) partsfree meetPlating environmental standards of • Lead-freeLead MIL-STD-19500 /228 Solderable per MIL-STD-202, Method 208 • RoHS product for packing code suffix "G" ‧Polarity: Cathode Band Halogen free product for packing code suffix "H" .188(4.77) 0.071(1.8) .169(4.30) .406(10.30) .138(3.50) 0.056(1.4) .121(3.08) .382(9.70) .134(3.40) .114(2.90) .098(2.50) Mechanical ‧Weight: 1.64 gramsdata (approximate) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .610(15.50) 0.040(1.0) 0.031(0.8) Typ. .035(1.00) .492(12.50) .021(0.55) .031(0.80) .015(0.38) .108(2.75) .091(2.30) Dimensions in inches and (millimeters) VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts MAXIMUM RATINGS (TA=25°C unless otherwise noted) Maximum Average Forward Rectified Current IO PARAMETER Peak Forward Surge Current 8.3 ms single half sine-wave SYMBOL IFSM superimposed on rated load (JEDEC method) Maximum repetitive peak reverse voltage Typical Thermal Resistance (Note 2) Maximum RMS voltage Typical Junction Capacitance (Note 1) Maximum DC blocking voltage Operating Temperature Range .114(2.90) .098(2.50) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code 0.031(0.8) Typ. .067(1.70) .138(3.50) Dimensions .039(1.00)in inches and (millimeters) .560(14.22) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage .047MAX (1.20) .171(4.35) is available ‧ Pb-Free Ratings at 25℃ package ambient temperature unless otherwise specified. RoHS product packing suffix ”G” Single phase half wave, for 60Hz, resistive code of inductive load. For capacitive load, derate current by 20% Halogen free product for packing code suffix “H” RATINGS .110(2.54) 0.024(0.6) .571(14.50) Features Method 2026 ‧Guardring for overvoltage protection • Polarity : Indicated by cathode band ‧Very small conduction losses • Mounting Position : Any ‧Low forward voltage drop • Weight : Approximated 0.011 gram ‧Component in accordance to RoHS 2002/95/EC 0.012(0.3) Typ. Storage Temperature Range rectified current Maximum average forward Peak forward surge current, 8.3ms single half CHARACTERISTICS sine-wave superimposed on rated load Maximum Forward Voltage at 1.0A DC Maximum Instantaneous Forward Maximum Average Reverse Current at Voltage @T A=25℃ IF=8A @ 25°C @T A=125℃ Rated DC Blocking Voltage Maximum DC Reverse Current @ Tc=25°C NOTES: at Rated DC Blocking Voltage @ Tc=100°C 2- Thermal Resistance From Junction to Ambient Typical Thermal Resistance SP860 VRRM 40 60 V CRMS J 28 42 -55 to +125 40 60 RΘJA TVJDC Amps SP8150 UNIT SP8200 10040 150 200 140 100 -55 to +150 150 70120 105 Amps V℃/W 200 - 65 8 to +175 TSTG I F V PF V ℃ A ℃ SYMBOL IFSM FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH 125.0 FM180-MH FM1100-MH FM1150-MH FM1200-MHAUNIT VF IRVF 0.50 0.55 Cj 0.70 0.70 0.5 30 IR 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Typical Junction Capacitance(NOTE1) SP840 1.0 SP8100 30 420 300 RθJC Operating Temperature Range TJ Storage Temperature Range TSTG 0.9 0.85 0.850.5 10 260 0.92 0.92 0.2 10 Volts VmAmps mA 230 3 200 pF °C/W -55 to +125 -55 to +150 -55 to +150 °C °C NOTES:1.Measured at 1.0MHZ and applied reverse voltage of 4.0V DC 2012-06 2012-08 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SP840 THRUTHRU 8.0A SCHOTTKY BARRIER RECTIFIERS -40V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V ITO-220A PACKAGE FM1200-M+ SP8200 Pb Free Product SOD-123+ PACKAGE Package outline FIG. 1-TYPICAL 1 TYPICAL FORWARD CURRENT DERATING CURVE Features • Batch process design, excellent power dissipation offers 10 better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. 8 • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. 6 • Guardring for overvoltage protection. switching. • Ultra high-speed SP840~SP8100 4 • Silicon epitaxial planar chip, metal silicon junction. SP8150~SP8200 meet environmental standards of • Lead-free parts MIL-STD-19500 /228 2 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" FIG. 2-TYPICAL 2 TYPICAL FORWARD CHARACTERISTICS AVERAGE FORWA ARD CURRENT,(A) INSTANTANEOUS FORW WARD CURRENT (A) 100.00 0 Mechanical data •0Epoxy 20 : UL94-V0 40 60 rated 80 flame 100 retardant 120 140 160 180 200 • Case : Molded plastic, SOD-123H AMBIENT TEMPERATURE(℃) , • Terminals :Plated terminals, solderable per MIL-STD-750 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. 80 For capacitive load, derate current by 20% 0.01 0.2 0.4 0.040(1.0) 0.024(0.6) 0.8 0.6 1.0 0.031(0.8) Typ. FORWARD VOLTAGE (V) 10 1 0.1 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH0.01 RATINGS Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 VDC 20 100 30 10 Maximum Average Forward Rectified Current NUMBER OF CYCLES AT 60Hz Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) FIG. 5-TYPICAL JUNCTION CAPACITANCE IO IFSM Operating Temperature Range SP840 SP860 Storage Temperature Range 16 60 18 80 10 100 115 120 25℃ 150 200 Volts 28 35 42 56 70 105 140 Volts 50 20 60 40 80 200100 Volts 40 0.0001 60 100 150 80 100℃ 1.0 30 40 120 CJ Typical1600 Junction Capacitance (Note 1) 14 15 40 0.00150 PERCENTAGE RATED PEAK REVERSE VOLTAGE (%) RΘJA Typical Thermal Resistance (Note 2) JUNC CTION CAPACITANCE (pF) SP840 SP860 SP8100 SP8150 SP8200 0.10 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 1 -55 to +125 TJ Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ SP8100 1200 CHARACTERISTICS Maximum Forward Voltage at 1.0A DC SP8150 SP8200 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum 800Average Reverse Current at @T A=25℃ @T A=125℃ Rated DC Blocking Voltage 0.071(1.8) 0.056(1.4) Dimensions in inches and (millimeters) TJ=25℃ 8.3ms Single Half Sine Wave JEDEC 0 DC Blocking Voltage Maximum 1.00 100 • Weight : Approximated 0.011 gram Marking40Code 0.012(0.3) Typ. FIG. 4-TYPICAL REVERSE CHARACTERISTICS REVERSE LEAKAGE CURR RENT (mA) PEAK FORWARD SURGE CUR P RRENT (A) 0.146(3.7) 0.130(3.3) 10.00 0.031(0.8) Typ. Method 2026 FIG. 3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT • Polarity : Indicated by cathode band 160• Mounting Position : Any 120 SOD-123H TJ=25℃ PULSE WIDTH 300us 2% DUTY CYCLE 0.50 0.70 0.85 0.5 IR 10 0.9 0.92 Volts mAmps NOTES: 400 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0 0 1 10 100 REVERSE VOLTAGE (V) 2012-06 2012-08 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.