2SB1188 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES z Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A) z Complements the 2SD1766 z Weight: 0.05 g z RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" z Moisture Sensitivity Level 1 SOT-89 1. BASE 2. COLLECTOR1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 2 Value Units V VCBO Collector-Base Voltage -40 VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -2 A PC Collector Power Dissipation TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 0.5 (2.0*) 3 3. EMITTER W * When mounted on a 40*40*1mm ceramic board. ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage Emitter-base breakdown voltage Test conditions MIN TYP MAX UNIT -40 V IC= -1mA , IB 0 V(BR)CEO = -32 V V(BR)EBO IE=-50μA, IC=0 -5 V Collector cut-off current ICBO = VCB=-20 V , IE 0 -1 μA Emitter cut-off current IEBO = VEB=-4 V , IC 0 -1 μA DC current gain * hFE Collector-emitter saturation voltage * VCE(sat) fT Transition frequency Cob Output capacitance IC=-50μA , IE=0 VCE= -3V, IC= -0.5A 82 390 IC=-2A, IB= -0.2A -0.8 V VCE=-5V, IC=-0.5A ,f=30MHz 100 MHz VCB=-10V, IE=0 ,f=1MHz 50 pF * Measured using pulse current. CLASSIFICATION Rank Range Marking P/N 2012-0 OF hFE P Q R 82-180 120-270 180-390 BCP BCQ BCR 2SB1188P 2SB1188Q 2SB1188 WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 2SB1188 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER Transistors RECTIFIERS -20V- 200V SOT-89 Plastic-Encapsulate Pb Free Product SOD-123+ PACKAGE hFE Static Characteristic -0.7 COMMON EMITTER Ta=25℃ Features (A) -0.6 process design, excellent power dissipation offers • Batch -2.0mA DC CURRENT GAIN IC COLLECTOR CURRENT V Mechanical data —— CEsat -1000 a Ta=25℃ COMMON EMITTER VCE= -3V -5 -10 -100 -1000 COLLECTOR CURRENT IC -2000 (mA) IC 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. -1000 Ta=25℃ Dimensions in inches and (millimeters) Ta=100 ℃ MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. β=10 -1 Single phase -1half wave, 60Hz, load. -1000 -2000 -10 resistive of inductive -100 COLLECTOR CURREMT I (mA) For capacitive load, derate current by 20% C RATINGS IC —— β=10 -100 -0.1 VRRM Maximum RMS Voltage VRMS 14 21 VDC 20 30 T= a 25 ℃ Peak Forward-10Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) -0 -200 -400 -600 -800 -1000 600 COLLECTOR POWER DISSIPATION PC (mW) IC -1000 -2000 (mA) 35 40 50 18 80 10 f=1MHz IE=0/IC=0 100 115 150 120 200 Volts 42 56 70 105 140 Volts 60 80 100 150 200 Volts Cob -1200 Ta=25 ℃ 1.0 30 Amps Amps 40 120 PF -55 to +150 - 65 to +175 1 -0.1 ℃/W -1 REVERSE VOLTAGE V -10 ℃ ℃ -20 (V) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Ta Maximum Average Reverse Current at @T A=25℃ 0.50 0.70 0.85 0.5 IR @T A=125℃ Rated DC Blocking Voltage 500 -100 16 60 10 BASE-EMMITER VOLTAGE VBE (mV) CHARACTERISTICS PC —— Maximum Forward Voltage at 1.0A DC 28 Cib -55 to +125 COMMON EMITTER TJ VCE= -3V TSTG 15 50 CJ Typical Junction Capacitance (Note 1) 14 40 RΘJA Typical Thermal Resistance (Note 2) -1 100 C T= a 10 0℃ IO IFSM Maximum Average Forward Rectified Current 300 CAPACITANCE (mA) COLLECTOR CURRENT IC -100 Maximum DC Blocking Voltage 13 30 (pF) Maximum Recurrent Peak Reverse Voltage -0.1 Storage Temperature Range -10 COLLECTOR CURREMT 12 20 -1000 Operating Temperature Range -1 Cob/CFM160-MH —— FM180-MH VCB/VEB FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH ib VBE -2000 NOTES: 0.012(0.3) Typ. 10 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 0.146(3.7) 0.130(3.3) 100 VBEsat —— Method 2026 Marking Code Ta=25℃ IC • Polarity : Indicated by cathode band • Mounting Position : Any T =100 ℃ -10 • Weight : Approximated 0.011 gram SOD-123H -2000 -100 IC 0.071(1.8) 0.056(1.4) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Ta=100℃ hFE better reverse leakage current and thermal resistance. -1.8mA -0.5 profile surface mounted application in order to • Low -1.6mA optimize board space. -0.4 -1.4mA • Low power loss, high efficiency. drop. • High current capability, low forward voltage -1.2mA -0.3 • High surge capability. -1.0mA -0.8mA for overvoltage protection. • Guardring -0.2 -0.6mA • Ultra high-speed switching. -0.4mA -0.1 epitaxial planar chip, metal silicon junction. • Silicon IB=-0.2mA of • Lead-free parts meet environmental standards -0.0 MIL-STD-19500 /228 -0 -1 -2 -3 -4 -5 -6 for packing code VOLTAGE suffix "G"VCE (V) • RoHS productCOLLECTOR-EMITTER Halogen free product for packing code suffix "H" —— Package outline 1000 0.9 0.92 Volts 10 mAmp 400 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 300 200 100 0 0 2012-06 2012-0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) 150 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 2SB1188 FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Outline Drawing SOT-89 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data .181(4.60) • Epoxy : UL94-V0 rated flame retardant .173(4.39) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. .063(1.60) Method 2026 .055(1.40) .061REF • Polarity : Indicated by cathode band (1.55)REF • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT .167(4.25) Marking Code Maximum RMS Voltage VRMS Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave .047(1.2) superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ .060TYP (1.50)TYP 14 21 .023(0.58) .016(0.40) 20 30 28 35 40 50 TSTG 18 80 10 100 115 150 120 200 Volts 42 56 70 105 140 Volts 60 80 100 150 200 Volts 1.0 30 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 ℃ .197(0.52) FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH .017(0.44) SYMBOL FM120-MH FM130-MH FM140-MH .013(0.32) 0.9 0.92 VF 0.50 0.70 0.85 .014(0.35) .118TYP UNIT IR (3.0)TYP mAmps CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 14 40 RΘJA Typical Thermal.031(0.8) Resistance (Note 2) .102(2.60) 15 16 .091(2.30) 50 60 13 30 VRRM Maximum Recurrent Peak Reverse Voltage .154(3.91) Storage Temperature Range 12 20 @T A=125℃ 0.5 Volts 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-0 WILLAS ELECTRONIC CORP. Rev.C WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 2SB1188 FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Pb Free Product Package outline SOD-123H • Low profile surface mounted application in order to optimize board space. Ordering Information: 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) Device PN Packing low forward voltage drop. • High current capability, • High surge capability. 2SB1188 x(3)–SOT89 (1)G(2)‐WS Tape& Reel: 1 Kpcs/Reel • Guardring for overvoltage protection. CASE:SOT‐89 Ultra high-speed switching. •Note: (1) • Silicon epitaxial planar chip, metal silicon junction. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of /228 MIL-STD-19500 (3) CLASSIFICATION OF h FE RANK • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20% changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS Marking Codefor any errors or inaccuracies. Data sheet specifications and its information 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM contained are intended to provide a product description only. "Typical" parameters Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Volts Maximum DCwhich may be included on WILLAS data sheets and/ or specifications can Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Amps Maximum Average Forward Rectified Current IO 1.0 and do vary in different applications and actual performance may vary over time. Peak ForwardWILLAS does not assume any liability arising out of the application or Surge Current 8.3 ms single half sine-wave 30 IFSM Amps superimposed on rated load (JEDEC method) use of any product or circuit. RΘJA ℃/W 40 Typical Thermal Resistance (Note 2) PF 120 Typical Junction CJ Capacitance (Note 1) -55 to +125 -55 to +150 Operating Temperature Range TJ ℃ WILLAS products are not designed, intended or authorized for use in medical, - 65 to +175 Storage Temperature Range TSTG ℃ life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT applications where a failure or malfunction of component or circuitry may directly Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 0.5 Maximum Average Reverse Current at @T A=25℃ or indirectly cause injury or threaten a life without expressed written approval IR mAmps 10 @T A=125℃ Rated DC Blocking Voltage of WILLAS. Customers using or selling WILLAS components for use in NOTES: such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.