WILLAS 2SC4081XT1

WILLAS
SOT-323
Plastic-Encapsulate
Transistors
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
FM120-M+
THRU
2SC4081xT1
FM1200-M+
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process
TRANSISTOR
(NPN) design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
FEATURES
optimize board space.
z
hFE high
linearity
Low power loss,
efficiency.
• Excellent
High current
capability,islow
forward voltage drop.
• Pb-Free
package
available
z
• High surge capability.
RoHS product for packing code suffix ”G”
• Guardring for overvoltage protection.
free product
for packing code suffix “H”
Ultra high-speed
switching.
• Halogen
• Silicon epitaxial planar chip, metal silicon junction.
parts(T
meet
environmental
standards of noted)
• Lead-free
℃ unless otherwise
a=25
MAXIMUM
RATINGS
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
•
Symbol
Parameter
Value
Halogen free product for packing code suffix "H"
SOT-323
0.146(3.7)
0.130(3.3)
1. BASE
2. EMITTER
Unit
Collector-Base
Voltage
Mechanical
data
VCEO
50
V
Collector-Emitter
: UL94-V0 ratedVoltage
flame retardant
• Epoxy
: Molded plastic,
SOD-123H
• Case
Emitter-Base
Voltage
7
V
,
• Terminals
:Plated
terminals,
solderable per150
MIL-STD-750 mA
Collector
Current
-Continuous
IC
PC
TJ
Tstg
60
Method 2026
Collector Power Dissipation
• Polarity : Indicated by cathode band
Junction Temperature
• Mounting Position : Any
Storage
Temperature
• Weight
: Approximated
0.011 gram
0.071(1.8)
0.056(1.4)
3. COLLECTOR
VCBO
VEBO
0.012(0.3) Typ.
V
200
mW
150
℃
-55-150
℃
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS
(Ta=25℃
unless otherwise
specified)
MAXIMUM RATINGS AND
ELECTRICAL
CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Symbol
Test conditions
Single phase
half wave, 60Hz, resistive of inductive
load.
Parameter
For capacitive load, derate current by 20%
Collector-base breakdown
voltage
RATINGS
Marking Code
V(BR)CEO
VRRM
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Emitter-base breakdown voltage
Maximum DC Blocking Voltage
13
30
21
28
35
30
40
50
VCB=60V,IE=0
RΘJA
hFE(1)
Typical
Thermal
Resistance (Note 2)
DC
current
gain
CJ
Typical Junction Capacitance (Note 1)
TJ
VCE(sat)
Operating Temperature
Range
Collector-emitter
saturation
voltage
Storage Temperature Range
15
50
20
ICBOIO
superimposed on rated load (JEDEC method)
14
40
14
IE=50μA,IC=0
VDC
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
IEBO
Emitter cut-off current
16
60
7
V
10
100
42
56
70
80
100
1.0
30
VEB=7V,IC=0
VCE=6V,IC=1mA
120
-55 to +125
IC=50mA,I
B=5mA
Unit
FM180-MH FM1100-MH FM1150-MH FM1200-MH U
60
V
V
115
150
120
200
V
105
140
V
150
200
V
A
μA
0.1
- 65 to +175
A
μA
0.1
40
120
VCE=12V,IC=2mA,f=30MHz
fT
CHARACTERISTICS
Max
18
80
50
TSTG
Transition frequency
℃
560
-55
to +150 V
0.4
180
MHz
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
CobVF
Maximum Forward
at 1.0A DC
Collector
outputVoltage
capacitance
Maximum Average Reverse Current at @T A=25℃
CLASSIFICATION
OF hFE(1)
12
20
IC=1mA,IB=0
VRMS
V(BR)EBO
Maximum Average
Collector
cut-off Forward
currentRectified Current
Rated DC Blocking Voltage
Typ
IC=50μA,I
60
V(BR)CBO
E=0
FM130-MH
FM140-MH FM150-MH FM160-MH
SYMBOL FM120-MH
Collector-emitter breakdown voltage
Min
@T A=125℃
0.50
VCB12V,IE=0,f=1MHz
0.70
pF 0.9
0.85
3.5
0.92
0.5
IR
V
m
10
NOTES:
Rank
1- Measured at 1 MHZ and applied reverse voltage ofQ
4.0 VDC.
R
S
120-270
180-390
270-560
BQ
BR
BS
2- Thermal Resistance From Junction to Ambient
Range
Marking
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SC4081xT1
THRU
FM1200-M+
SOT-323
Plastic-Encapsulate
Transistors
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Typical Characterisitics
Static Characteristic
12
excellent power
• Batch process design,40uA
COMMON
EMITTER
dissipation
Ta=25℃
hFE
SOD-123H
DC CURRENT GAIN
COLLECTOR CURRENT
Ta=25℃
0.146(3.7)
0.130(3.3)
100
COMMON EMITTER
VCE=6V
1
VCEsat
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
a
Ta=100℃
——
100
IC
150
(mA)
IC
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
0.8
,
• Terminals :Plated terminals,
solderable per MIL-STD-750
T =25℃
0.6
• Polarity
: Indicated by cathode band
• Mounting Position : Any
• Weight
: Approximated 0.011 gram
0.4
10
COLLECTOR CURRENT
1
Method 2026
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
10
0.5
IC
——
BEsat
1.0
Pb Free Product
IC
Ta=100℃
IC
(mA)
offers
36uA
better reverse leakage current
and thermal resistance.
9
application in order to
• Low profile surface mounted32uA
optimize board space.
28uA
• Low power loss, high efficiency. 24uA
drop.
• High 6current capability, low forward voltage
20uA
• High surge capability.
16uA
• Guardring for overvoltage protection.
12uA
• Ultra3high-speed switching.
8uA
• Silicon epitaxial planar chip, metal silicon junction.
=4uA
• Lead-free parts meet environmental standardsIBof
0
MIL-STD-19500
/228
0
2
4
6
8
packing code suffix "G"
• RoHS product for
COLLECTOR-EMITTER VOLTAGE VCE (V)
Halogen free product for packing code suffix "H"
——
Package outline
1000
Features
V
Mechanical data
hFE
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
0.1
Ta=100℃
Ta=25℃
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
β=10
Marking Code
IC
RATINGS
150
100
——
VRMS
14
21
VDC
20
30
COLLCETOR CURRENT
Ta=25℃
Peak Forward Surge Current 8.3 ms single half sine-wave
1
superimposed on rated load (JEDEC method)
0.6
Storage Temperature RangeBASE-EMMITER VOLTAGE
0.8
VBE
TJ
(MHz)
35
42Cib
56
40
50
60
80
C
10
115
150
120
200
V
70
105
140
V
100
150
200
V
Ta=25℃
100
1.0
A
C ob
30
1
A
40
120
-55 to +125
0.1
℃
-55 to +150
0.1
VF
1
10
- 65 to +175
REVERSE VOLTAGE V (V)
0.50
IR
fT
@T A=125℃
1- Measured at 1
100MHZ and applied reverse voltage of 4.0 VDC.
28
f=1MHz
=0/IC=0
I10
E
20
PC —— Ta
FM140-MH FM150-MH FM160-MH
FM180-MH FM1100-MH FM1150-MH FM1200-MH U
SYMBOL FM120-MH FM130-MH
250
fT —— IC
CHARACTERISTICS
TRANSITION FREQUENCY
NOTES:
18
80
1.0
TSTG
Maximum Average Reverse Current at @T A=25℃
16
60
(V)
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
15
50
COMMON
CJ EMITTER
VCE=6V
Typical Junction Capacitance (Note 1)
1000
IO
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
0.4
(mA)
14
40
CAPACITANCE
IC
Ta=100℃
Maximum Average Forward Rectified Current
0.2
100 150
IC
13
30
(pF)
Maximum RMS Voltage
(mA)
VRRM
0.1
Operating Temperature
Range
10
Cob/ Cib —— VCB/ VEB
100 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
SYMBOL FM120-MH FM130-MH
VBE
Maximum Recurrent Peak Reverse Voltage
1
COLLECTOR CURRENT
12
20
10
Maximum DC Blocking
Voltage
0.01
0.1
COLLECTOR POWER DISSIPATION
PC (mW)
β=10
Ratings at 25℃
ambient temperature unless otherwise specified.
0.2
0.1
1
10
100 150
Single phase half wave, 60Hz,
resistive of inductive load.
COLLECTOR CURRENT IC (mA)
For capacitive load, derate current by 20%
2- Thermal Resistance From Junction to Ambient
VCE=12V
0.70
0.9
0.85
0.92
0.5
200
V
m
10
150
100
50
Ta=25℃
10
0
1
10
COLLECTOR CURRENT
2012-06
2012-
50
IC
(mA)
0
25
50
75
100
AMBIENT TEMPERATURE
Ta
125
150
(℃ )
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
SOT-323
Plastic-Encapsulate
Transistors
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
FM120-M+
THRU
2SC4081xT1
FM1200-M+
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Outline Drawing
SOT-323
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Halogen free product for packing code suffix "H"
Mechanical data
.054(1.35)
.045(1.15)
.087(2.20)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H .070(1.80)
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
.004(0.10)MIN.
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
.096(2.45)
.078(2.00)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
.056(1.40)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
.047(1.20)
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
VRRM
14
40
.010(0.25)
18
10
80
100
.003(0.08)
15
50
16
60
115
150
120
200
V
VRMS
14
21
28
35
42
56
70
105
140
VDC
20
30
40
50
60
80
100
150
200
V
IO
IFSM
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
.004(0.10)MAX.
Storage Temperature
Range
13
30
V
RΘJA
Typical Thermal Resistance (Note 2)
12
20
1.0
30
40
120
-55 to +125
A
A
℃
-55 to +150
- 65 to +175
TSTG
VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
.016(0.40)
.008(0.20)
1- Measured at 1 MHZ and applied reverse voltage
of 4.0 VDC.
NOTES:
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
2- Thermal Resistance From Junction to Ambient
0.50
0.70
.043(1.10)
.032(0.80)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
0.85
0.9
0.92
0.5
10
V
m
Dimensions in inches and (millimeters)
2012-06
2012-
Rev.C CORP
WILLAS ELECTRONIC
WILLAS ELECTRONIC CORP.