WILLAS SOT-323 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM120-M+ THRU 2SC4081xT1 FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process TRANSISTOR (NPN) design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to FEATURES optimize board space. z hFE high linearity Low power loss, efficiency. • Excellent High current capability,islow forward voltage drop. • Pb-Free package available z • High surge capability. RoHS product for packing code suffix ”G” • Guardring for overvoltage protection. free product for packing code suffix “H” Ultra high-speed switching. • Halogen • Silicon epitaxial planar chip, metal silicon junction. parts(T meet environmental standards of noted) • Lead-free ℃ unless otherwise a=25 MAXIMUM RATINGS MIL-STD-19500 /228 RoHS product for packing code suffix "G" • Symbol Parameter Value Halogen free product for packing code suffix "H" SOT-323 0.146(3.7) 0.130(3.3) 1. BASE 2. EMITTER Unit Collector-Base Voltage Mechanical data VCEO 50 V Collector-Emitter : UL94-V0 ratedVoltage flame retardant • Epoxy : Molded plastic, SOD-123H • Case Emitter-Base Voltage 7 V , • Terminals :Plated terminals, solderable per150 MIL-STD-750 mA Collector Current -Continuous IC PC TJ Tstg 60 Method 2026 Collector Power Dissipation • Polarity : Indicated by cathode band Junction Temperature • Mounting Position : Any Storage Temperature • Weight : Approximated 0.011 gram 0.071(1.8) 0.056(1.4) 3. COLLECTOR VCBO VEBO 0.012(0.3) Typ. V 200 mW 150 ℃ -55-150 ℃ 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Symbol Test conditions Single phase half wave, 60Hz, resistive of inductive load. Parameter For capacitive load, derate current by 20% Collector-base breakdown voltage RATINGS Marking Code V(BR)CEO VRRM Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Emitter-base breakdown voltage Maximum DC Blocking Voltage 13 30 21 28 35 30 40 50 VCB=60V,IE=0 RΘJA hFE(1) Typical Thermal Resistance (Note 2) DC current gain CJ Typical Junction Capacitance (Note 1) TJ VCE(sat) Operating Temperature Range Collector-emitter saturation voltage Storage Temperature Range 15 50 20 ICBOIO superimposed on rated load (JEDEC method) 14 40 14 IE=50μA,IC=0 VDC Peak Forward Surge Current 8.3 ms single half sine-wave IFSM IEBO Emitter cut-off current 16 60 7 V 10 100 42 56 70 80 100 1.0 30 VEB=7V,IC=0 VCE=6V,IC=1mA 120 -55 to +125 IC=50mA,I B=5mA Unit FM180-MH FM1100-MH FM1150-MH FM1200-MH U 60 V V 115 150 120 200 V 105 140 V 150 200 V A μA 0.1 - 65 to +175 A μA 0.1 40 120 VCE=12V,IC=2mA,f=30MHz fT CHARACTERISTICS Max 18 80 50 TSTG Transition frequency ℃ 560 -55 to +150 V 0.4 180 MHz SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U CobVF Maximum Forward at 1.0A DC Collector outputVoltage capacitance Maximum Average Reverse Current at @T A=25℃ CLASSIFICATION OF hFE(1) 12 20 IC=1mA,IB=0 VRMS V(BR)EBO Maximum Average Collector cut-off Forward currentRectified Current Rated DC Blocking Voltage Typ IC=50μA,I 60 V(BR)CBO E=0 FM130-MH FM140-MH FM150-MH FM160-MH SYMBOL FM120-MH Collector-emitter breakdown voltage Min @T A=125℃ 0.50 VCB12V,IE=0,f=1MHz 0.70 pF 0.9 0.85 3.5 0.92 0.5 IR V m 10 NOTES: Rank 1- Measured at 1 MHZ and applied reverse voltage ofQ 4.0 VDC. R S 120-270 180-390 270-560 BQ BR BS 2- Thermal Resistance From Junction to Ambient Range Marking 2012-06 2012- WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SC4081xT1 THRU FM1200-M+ SOT-323 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Typical Characterisitics Static Characteristic 12 excellent power • Batch process design,40uA COMMON EMITTER dissipation Ta=25℃ hFE SOD-123H DC CURRENT GAIN COLLECTOR CURRENT Ta=25℃ 0.146(3.7) 0.130(3.3) 100 COMMON EMITTER VCE=6V 1 VCEsat COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) a Ta=100℃ —— 100 IC 150 (mA) IC 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H 0.8 , • Terminals :Plated terminals, solderable per MIL-STD-750 T =25℃ 0.6 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.4 10 COLLECTOR CURRENT 1 Method 2026 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 10 0.5 IC —— BEsat 1.0 Pb Free Product IC Ta=100℃ IC (mA) offers 36uA better reverse leakage current and thermal resistance. 9 application in order to • Low profile surface mounted32uA optimize board space. 28uA • Low power loss, high efficiency. 24uA drop. • High 6current capability, low forward voltage 20uA • High surge capability. 16uA • Guardring for overvoltage protection. 12uA • Ultra3high-speed switching. 8uA • Silicon epitaxial planar chip, metal silicon junction. =4uA • Lead-free parts meet environmental standardsIBof 0 MIL-STD-19500 /228 0 2 4 6 8 packing code suffix "G" • RoHS product for COLLECTOR-EMITTER VOLTAGE VCE (V) Halogen free product for packing code suffix "H" —— Package outline 1000 Features V Mechanical data hFE 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) 0.1 Ta=100℃ Ta=25℃ MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS β=10 Marking Code IC RATINGS 150 100 —— VRMS 14 21 VDC 20 30 COLLCETOR CURRENT Ta=25℃ Peak Forward Surge Current 8.3 ms single half sine-wave 1 superimposed on rated load (JEDEC method) 0.6 Storage Temperature RangeBASE-EMMITER VOLTAGE 0.8 VBE TJ (MHz) 35 42Cib 56 40 50 60 80 C 10 115 150 120 200 V 70 105 140 V 100 150 200 V Ta=25℃ 100 1.0 A C ob 30 1 A 40 120 -55 to +125 0.1 ℃ -55 to +150 0.1 VF 1 10 - 65 to +175 REVERSE VOLTAGE V (V) 0.50 IR fT @T A=125℃ 1- Measured at 1 100MHZ and applied reverse voltage of 4.0 VDC. 28 f=1MHz =0/IC=0 I10 E 20 PC —— Ta FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U SYMBOL FM120-MH FM130-MH 250 fT —— IC CHARACTERISTICS TRANSITION FREQUENCY NOTES: 18 80 1.0 TSTG Maximum Average Reverse Current at @T A=25℃ 16 60 (V) Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage 15 50 COMMON CJ EMITTER VCE=6V Typical Junction Capacitance (Note 1) 1000 IO IFSM RΘJA Typical Thermal Resistance (Note 2) 0.4 (mA) 14 40 CAPACITANCE IC Ta=100℃ Maximum Average Forward Rectified Current 0.2 100 150 IC 13 30 (pF) Maximum RMS Voltage (mA) VRRM 0.1 Operating Temperature Range 10 Cob/ Cib —— VCB/ VEB 100 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U SYMBOL FM120-MH FM130-MH VBE Maximum Recurrent Peak Reverse Voltage 1 COLLECTOR CURRENT 12 20 10 Maximum DC Blocking Voltage 0.01 0.1 COLLECTOR POWER DISSIPATION PC (mW) β=10 Ratings at 25℃ ambient temperature unless otherwise specified. 0.2 0.1 1 10 100 150 Single phase half wave, 60Hz, resistive of inductive load. COLLECTOR CURRENT IC (mA) For capacitive load, derate current by 20% 2- Thermal Resistance From Junction to Ambient VCE=12V 0.70 0.9 0.85 0.92 0.5 200 V m 10 150 100 50 Ta=25℃ 10 0 1 10 COLLECTOR CURRENT 2012-06 2012- 50 IC (mA) 0 25 50 75 100 AMBIENT TEMPERATURE Ta 125 150 (℃ ) WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS SOT-323 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM120-M+ THRU 2SC4081xT1 FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Outline Drawing SOT-323 SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" Mechanical data .054(1.35) .045(1.15) .087(2.20) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H .070(1.80) , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .004(0.10)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. .096(2.45) .078(2.00) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U .056(1.40) Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage .047(1.20) Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) VRRM 14 40 .010(0.25) 18 10 80 100 .003(0.08) 15 50 16 60 115 150 120 200 V VRMS 14 21 28 35 42 56 70 105 140 VDC 20 30 40 50 60 80 100 150 200 V IO IFSM Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ .004(0.10)MAX. Storage Temperature Range 13 30 V RΘJA Typical Thermal Resistance (Note 2) 12 20 1.0 30 40 120 -55 to +125 A A ℃ -55 to +150 - 65 to +175 TSTG VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR .016(0.40) .008(0.20) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. NOTES: SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U 2- Thermal Resistance From Junction to Ambient 0.50 0.70 .043(1.10) .032(0.80) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 0.85 0.9 0.92 0.5 10 V m Dimensions in inches and (millimeters) 2012-06 2012- Rev.C CORP WILLAS ELECTRONIC WILLAS ELECTRONIC CORP.