WILLAS MMBT2907AWT1

WILLAS
FM120-M+
THRU
MMBT2907AWT1
FM1200-M+
1.0A
SURFACE MOUNT
SCHOTTKYTransistor
BARRIER RECTIFIERS -20V- 200V
General
Purpose
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Silicon
Low profile
surface mounted application in order to
•PNP
SOD-123H
optimize board space.
• Low power loss, high efficiency.
High current capability, low forward voltage drop.
•FEATURE
High
surgethat
capability.
•We
declare
the material of product compliance with RoHS requirements.
Guardring
for overvoltage
protection.
•Pb-Free
package
is available
• Ultra high-speed switching.
RoHS product for packing code suffix ”G”
• Silicon epitaxial planar chip, metal silicon junction.
product
for packing code
suffixof“H”
Lead-freefree
parts
meet environmental
standards
•Halogen
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
RoHS productINFORMATION
for packing code suffix "G"
•ORDERING
Halogen free product for packing code suffix "H"
r
Marking
Device
Mechanical
data
Shipping
•
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
V CBO
Value
Unit
– 60
Vdc
– 60
Vdc
0.031(0.8) Typ.
3
COLLECTOR
1
BASE
im
ina
Method 2026
MAXIMUM RATINGS
• Polarity : Indicated by cathode band
Rating
Symbol
• Mounting Position : Any
Collector–Emitter Voltage
V
• Weight : Approximated 0.011 gram CEO
Collector–Base Voltage
SOT–323
3000/Tape&Reel
ry
MMBT2907AWT1
20
Epoxy : UL94-V0 rated flame retardant
Dimensions in inches and (millimeters)
2
EMITTER
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Vdc
THERMAL CHARACTERISTICS
RATINGS
Marking Code
Characteristic
Maximum Recurrent Peak Reverse Voltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VRRM
Total Device Dissipation FR– 5 Board, (1)
Maximum RMS
VRMS
TA =Voltage
25°C
Maximum DCThermal
BlockingResistance,
Voltage
Junction to Ambient VDC
Maximum Average
Forward
Rectified
Current
Junction
and Storage
Temperature
mAdc
Pr
el
– 5.0
Emitter–Base Voltage
V EBO
Ratings at 25℃ ambient temperature unless otherwise specified.
Collector Current — Continuous
IC
– 600
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Peak Forward Surge Current 8.3 ms single half sine-wave
DEVICE MARKING
superimposed on rated load (JEDEC method)
IO
IFSM
Typical Thermal
Resistance (Note=20
2)
MMBT2907AWT1
RΘJA
Typical Junction Capacitance (Note 1)
CJ
12
Symbol
20
PD
14
13
30
15
Unit
50
mW
35
16
60
21
14
Max
40
150
28
20
RθJA
42
56
70
30
40
833
50
°C/W
60
80
100
TJ , Tstg
–55 to +150
Storage Temperature Range
Characteristic
40
120
OFF CHARACTERISTICS
CHARACTERISTICS
Collector–Emitter
Breakdown
Voltage(2)
Maximum Forward
Voltage at 1.0A
DC
TJ
TSTG
VF
Collector–Emitter
Breakdown
@TVoltage
A=125℃
Rated DC Blocking
Voltage
NOTES:
(I C = – 10 mAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = –10µAdc, I C = 0)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Min
115
150
120
200
Volts
105
140
Volts
150
200
Volts
Amp
Amp
℃/W
PF
-55 to +150
℃
+175
Max - 65 to
Unit
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
10 mAdc,
I B = 0)at @T A=25℃
(I C = –Reverse
Maximum Average
Current
Symbol
10
100
1.0
30
°C
noted.)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise
-55 to +125
Operating Temperature Range
18
80
V
(BR)CEO
0.50–60
—
0.70
Vdc
0.5
IR
V
(BR)CBO
–60
—
10
Vdc
V
(BR)EBO
–5.0
—
Vdc
I BL
—
– 50
nAdc
I CEX
—
– 50
nAdc
0.85
0.9
0.92
Volts
mAmp
2- Thermal Resistance From Junction to Ambient
Base Cutoff Current
( V CE = –30Vdc, V EB(OFF) = –0.5Vdc )
Collector Cutoff Current
( V CE = –30Vdc, V EB(OFF) = –0.5Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS
ELECTRONIC CORP.
WILLAS
FM120-M+
MMBT2907AWT1
THRU
FM1200-M+
1.0A
SURFACE MOUNT
SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
General
Purpose
Transistor
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
• Low profile surface mounted application in order to
optimize board space.Characteristic
ON power
CHARACTERISTICS
loss, high efficiency.
• Low
current
capability,
• High DC
Current
Gain(1) low forward voltage drop.
capability.
• High (Isurge
C =–0.1 mAdc, V CE =–10 Vdc)
for overvoltage
• Guardring
(I C = –1.0
mAdc, V CE = protection.
–10 Vdc)
switching.
• Ultra (Ihigh-speed
C = –10 mAdc, V CE = –10 Vdc)
planar
chip,
metal silicon junction.
• Silicon
(I Cepitaxial
= –150mAdc,
V CE
= –10Vdc)
parts meet environmental standards of
• Lead-free
(I C = –500mAdc, V CE =–10 Vdc)
MIL-STD-19500
/228
Saturation
Voltage(1)
product for packing
code suffix
"G"
• RoHSCollector–Emitter
(I C =free
–150
mAdc,forI Bpacking
= –15 mAdc)
Halogen
product
code suffix "H"
(I C = –500 mAdc,
I B = –50 mAdc)
Mechanical
data
Base–Emitter Saturation Voltage(1)
• Epoxy : UL94-V0 rated flame retardant
(I C = –150 mAdc, I B = –15mAdc)
plastic, SOD-123H
• Case(I: Molded
C = –500mAdc, I B = –50mAdc )
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Min
Max
0.146(3.7)
0.130(3.3)
Unit
0.012(0.3) Typ.
hFE
––
75
100
100
100
50
––
––
––
––
––
––
––
–0.4
–1.6
0.071(1.8)
0.056(1.4)
VCE(sat)
Vdc
0.040(1.0)
0.024(0.6)
Vdc
BE(sat)
––
––
–1.3
–2.6
ry
V
0.031(0.8) Typ.
SMALL–SIGNAL CHARACTERISTICS
Method 2026
Current–Gain — Bandwidth Product(4)
Polarity : Indicated by cathode band
(I C = –50mAdc, V CE= 20Vdc, f = 100MHz)
Mounting Position : Any
Output Capacitance
Weight
(V :CBApproximated
= –10 Vdc, I E =0.011
0, f = gram
1.0 MHz)
Input Capacitance
im
ina
•
•
•
SOD-123H
Symbol
0.031(0.8) Typ.
Dimensions
200 in inches and––(millimeters) MHz
f
T
C
––
8.0
pF
––
30
pF
obo
C
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ibo
(V EB = –2.0Vdc, I C = 0, f = 1.0 MHz)
Ratings at 25℃ ambient temperature unless otherwise specified.
t on
—
45
d
Delay Time
I
=
–150
mAdc,
I
=
–15
mAdc)
t
—
10 FM1100-MH ns
C
B1
FM1150-MH FM1200-MH UNIT
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
RATINGS
Rise
Time
t
—
r
Marking Code
12
13
14
15
16
18 40
10
115
120
Storage
(V CC = –6.0
—
30
40 t s
50
60
80 80
100
150
200
Maximum Recurrent
PeakTime
Reverse Voltage
Volts
VRRMVdc, 20
Fall Time
I C = –150 mAdc,I B1 = I B2 = 15 mAdc)
t
—
30
ns
Volts
14
21
28 f
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
Turn–Off Time
t off
—
100
Volts
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
1. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
Amps
Maximum Average Forward Rectified Current
IO
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
Amps
Pr
el
SWITCHING
CHARACTERISTICS
Single phase
half wave, 60Hz,
resistive of inductive load.
For capacitive Turn–On
load, derate
Timecurrent by 20% (V CC = –30 Vdc,
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
40
120
-55 to +125
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
10
0.9
0.92
Volts
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS
ELECTRONIC
CORP.
WILLAS
ELECTRONIC
CORP.
WILLAS
FM120-M+
THRU
MMBT2907AWT1
FM1200-M+
1.0A
SURFACE MOUNT
SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
General
Purpose
Transistor
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
SOT-323
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
.087(2.20)
of
• Lead-free parts meet environmental standards
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
ry
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.071(1.8)
0.056(1.4)
.096(2.45)
.078(2.00)
• RoHS product for packing code suffix "G"
0.012(0.3) Typ.
.004(0.10)MIN.
.070(1.80)
.054(1.35)
.045(1.15)
MIL-STD-19500 /228
0.146(3.7)
0.130(3.3)
0.031(0.8) Typ.
im
ina
Method 2026
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
• Mounting Position : Any
.056(1.40)
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
.010(0.25)
.003(0.08)
.047(1.20)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
Pr
el
Marking Code
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Volts
VDC
20
30
40
50
60
80
100
150
200
Volts
.004(0.10)MAX.
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IO
.016(0.40)
.008(0.20)
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
.043(1.10)
.032(0.80)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
1.0
30
40
120
CJ
Dimensions
in inches and (millimeters)
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
-55 to +125
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
0.025
FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH
0.025
VF
0.65
IR
0.50
0.65 0.70
0.85
0.5
10
0.9
0.92
Volts
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.075
1.9
2- Thermal Resistance From Junction to Ambient
0.035
0.9
0.028
0.7
inches
mm
2012-06
2012-11
WILLAS
ELECTRONIC
CORP.
WILLAS
ELECTRONIC
CORP.