WILLAS FM120-M+ THRU MMBT2907AWT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKYTransistor BARRIER RECTIFIERS -20V- 200V General Purpose Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Silicon Low profile surface mounted application in order to •PNP SOD-123H optimize board space. • Low power loss, high efficiency. High current capability, low forward voltage drop. •FEATURE High surgethat capability. •We declare the material of product compliance with RoHS requirements. Guardring for overvoltage protection. •Pb-Free package is available • Ultra high-speed switching. RoHS product for packing code suffix ”G” • Silicon epitaxial planar chip, metal silicon junction. product for packing code suffixof“H” Lead-freefree parts meet environmental standards •Halogen 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 RoHS productINFORMATION for packing code suffix "G" •ORDERING Halogen free product for packing code suffix "H" r Marking Device Mechanical data Shipping • • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. V CBO Value Unit – 60 Vdc – 60 Vdc 0.031(0.8) Typ. 3 COLLECTOR 1 BASE im ina Method 2026 MAXIMUM RATINGS • Polarity : Indicated by cathode band Rating Symbol • Mounting Position : Any Collector–Emitter Voltage V • Weight : Approximated 0.011 gram CEO Collector–Base Voltage SOT–323 3000/Tape&Reel ry MMBT2907AWT1 20 Epoxy : UL94-V0 rated flame retardant Dimensions in inches and (millimeters) 2 EMITTER MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Vdc THERMAL CHARACTERISTICS RATINGS Marking Code Characteristic Maximum Recurrent Peak Reverse Voltage SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VRRM Total Device Dissipation FR– 5 Board, (1) Maximum RMS VRMS TA =Voltage 25°C Maximum DCThermal BlockingResistance, Voltage Junction to Ambient VDC Maximum Average Forward Rectified Current Junction and Storage Temperature mAdc Pr el – 5.0 Emitter–Base Voltage V EBO Ratings at 25℃ ambient temperature unless otherwise specified. Collector Current — Continuous IC – 600 Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Peak Forward Surge Current 8.3 ms single half sine-wave DEVICE MARKING superimposed on rated load (JEDEC method) IO IFSM Typical Thermal Resistance (Note=20 2) MMBT2907AWT1 RΘJA Typical Junction Capacitance (Note 1) CJ 12 Symbol 20 PD 14 13 30 15 Unit 50 mW 35 16 60 21 14 Max 40 150 28 20 RθJA 42 56 70 30 40 833 50 °C/W 60 80 100 TJ , Tstg –55 to +150 Storage Temperature Range Characteristic 40 120 OFF CHARACTERISTICS CHARACTERISTICS Collector–Emitter Breakdown Voltage(2) Maximum Forward Voltage at 1.0A DC TJ TSTG VF Collector–Emitter Breakdown @TVoltage A=125℃ Rated DC Blocking Voltage NOTES: (I C = – 10 mAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = –10µAdc, I C = 0) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Min 115 150 120 200 Volts 105 140 Volts 150 200 Volts Amp Amp ℃/W PF -55 to +150 ℃ +175 Max - 65 to Unit ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 10 mAdc, I B = 0)at @T A=25℃ (I C = –Reverse Maximum Average Current Symbol 10 100 1.0 30 °C noted.) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise -55 to +125 Operating Temperature Range 18 80 V (BR)CEO 0.50–60 — 0.70 Vdc 0.5 IR V (BR)CBO –60 — 10 Vdc V (BR)EBO –5.0 — Vdc I BL — – 50 nAdc I CEX — – 50 nAdc 0.85 0.9 0.92 Volts mAmp 2- Thermal Resistance From Junction to Ambient Base Cutoff Current ( V CE = –30Vdc, V EB(OFF) = –0.5Vdc ) Collector Cutoff Current ( V CE = –30Vdc, V EB(OFF) = –0.5Vdc ) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT2907AWT1 THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistor Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) • Low profile surface mounted application in order to optimize board space.Characteristic ON power CHARACTERISTICS loss, high efficiency. • Low current capability, • High DC Current Gain(1) low forward voltage drop. capability. • High (Isurge C =–0.1 mAdc, V CE =–10 Vdc) for overvoltage • Guardring (I C = –1.0 mAdc, V CE = protection. –10 Vdc) switching. • Ultra (Ihigh-speed C = –10 mAdc, V CE = –10 Vdc) planar chip, metal silicon junction. • Silicon (I Cepitaxial = –150mAdc, V CE = –10Vdc) parts meet environmental standards of • Lead-free (I C = –500mAdc, V CE =–10 Vdc) MIL-STD-19500 /228 Saturation Voltage(1) product for packing code suffix "G" • RoHSCollector–Emitter (I C =free –150 mAdc,forI Bpacking = –15 mAdc) Halogen product code suffix "H" (I C = –500 mAdc, I B = –50 mAdc) Mechanical data Base–Emitter Saturation Voltage(1) • Epoxy : UL94-V0 rated flame retardant (I C = –150 mAdc, I B = –15mAdc) plastic, SOD-123H • Case(I: Molded C = –500mAdc, I B = –50mAdc ) , • Terminals :Plated terminals, solderable per MIL-STD-750 Min Max 0.146(3.7) 0.130(3.3) Unit 0.012(0.3) Typ. hFE –– 75 100 100 100 50 –– –– –– –– –– –– –– –0.4 –1.6 0.071(1.8) 0.056(1.4) VCE(sat) Vdc 0.040(1.0) 0.024(0.6) Vdc BE(sat) –– –– –1.3 –2.6 ry V 0.031(0.8) Typ. SMALL–SIGNAL CHARACTERISTICS Method 2026 Current–Gain — Bandwidth Product(4) Polarity : Indicated by cathode band (I C = –50mAdc, V CE= 20Vdc, f = 100MHz) Mounting Position : Any Output Capacitance Weight (V :CBApproximated = –10 Vdc, I E =0.011 0, f = gram 1.0 MHz) Input Capacitance im ina • • • SOD-123H Symbol 0.031(0.8) Typ. Dimensions 200 in inches and––(millimeters) MHz f T C –– 8.0 pF –– 30 pF obo C MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ibo (V EB = –2.0Vdc, I C = 0, f = 1.0 MHz) Ratings at 25℃ ambient temperature unless otherwise specified. t on — 45 d Delay Time I = –150 mAdc, I = –15 mAdc) t — 10 FM1100-MH ns C B1 FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH RATINGS Rise Time t — r Marking Code 12 13 14 15 16 18 40 10 115 120 Storage (V CC = –6.0 — 30 40 t s 50 60 80 80 100 150 200 Maximum Recurrent PeakTime Reverse Voltage Volts VRRMVdc, 20 Fall Time I C = –150 mAdc,I B1 = I B2 = 15 mAdc) t — 30 ns Volts 14 21 28 f 35 42 56 70 105 140 Maximum RMS Voltage VRMS Turn–Off Time t off — 100 Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC 1. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%. Amps Maximum Average Forward Rectified Current IO 1.0 Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Amps Pr el SWITCHING CHARACTERISTICS Single phase half wave, 60Hz, resistive of inductive load. For capacitive Turn–On load, derate Timecurrent by 20% (V CC = –30 Vdc, superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 40 120 -55 to +125 ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT2907AWT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistor Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. SOT-323 • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. .087(2.20) of • Lead-free parts meet environmental standards Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) ry • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.071(1.8) 0.056(1.4) .096(2.45) .078(2.00) • RoHS product for packing code suffix "G" 0.012(0.3) Typ. .004(0.10)MIN. .070(1.80) .054(1.35) .045(1.15) MIL-STD-19500 /228 0.146(3.7) 0.130(3.3) 0.031(0.8) Typ. im ina Method 2026 0.031(0.8) Typ. • Polarity : Indicated by cathode band • Mounting Position : Any .056(1.40) • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) .010(0.25) .003(0.08) .047(1.20) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS Pr el Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts VDC 20 30 40 50 60 80 100 150 200 Volts .004(0.10)MAX. Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IO .016(0.40) .008(0.20) IFSM RΘJA Typical Thermal Resistance (Note 2) .043(1.10) .032(0.80) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 1.0 30 40 120 CJ Dimensions in inches and (millimeters) Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ 0.025 FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH 0.025 VF 0.65 IR 0.50 0.65 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.075 1.9 2- Thermal Resistance From Junction to Ambient 0.035 0.9 0.028 0.7 inches mm 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.