RENESAS HA1630D07

HA1630D07
Dual CMOS High Drive Operational Amplifier
REJ03D0859-0200
Rev.2.00
Nov 30, 2007
Description
HA1630D07 is a low power dual CMOS operational amplifier featuring high output current with typical current supply
of 120 µA for both channels (2.7 V to 5.5 V). This IC designed to operate from a single power supply and have full
swing outputs. Available in MMPAK-8 and TSSOP-8 package, the miniature size of this IC not only allows compact
integration in portable devices but also minimizes distance of signal sources (sensors), thus reducing external noise pick
up prior to amplification. This IC exhibit excellent current drive-power ratio capable of 2 kΩ load driving and yet
resistant to oscillation for capacitive loads up to 200 pF.
Features
•
•
•
•
•
IDD = 120 µA Typ (VDD = 3 V, RL = No load)
VDD = 2.7 V to 5.5 V
VIO = 6 mV Max
IIB = 1 pA Typ
IOSOURCE = 15 mA Typ (VDD = 3.0 V, VOH = 2.5 V)
IOSINK = 15 mA Typ (VDD = 3.0 V, VOL = 0.5 V)
• Input common voltage range includes ground
Low supply current
Low voltage operation
Low input offset voltage
Low input bias current
High output current
Ordering Information
Part No.
HA1630D07MM
HA1630D07T
REJ03D0859-0200 Rev.2.00 Nov 30, 2007
Page 1 of 14
Package Name
MMPAK-8
TSSOP-8
Package Code
PLSP0008JC-A
PTSP0008JC-B
HA1630D07
Pin Arrangement
VOUT1 1
VIN1(–) 2
VIN1(+) 3
8 VDD
7 VOUT2
− +
+ −
VSS 4
6 VIN2(–)
5 VIN2(+)
(Top view)
Equivalent Circuit (1/2)
VDD
Vbias2
VIN(–)
VIN(+)
VOUT
Vbias1
VSS
REJ03D0859-0200 Rev.2.00 Nov 30, 2007
Page 2 of 14
Vbias3
HA1630D07
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Supply voltage
Differential input voltage
Input voltage
Output current
Power dissipation
VDD
VIN(diff)
VIN
IOUT
PT
Operating temperature
Storage temperature
Topr
Tstg
Note:
Ratings
7.0
–VDD to +VDD
–0.1 to +VDD
40
145 (MMPAK-8)
192 (TSSOP-8)
–40 to +85
–55 to +125
Unit
V
V
V
mA
mW
Note
1
2
°C
°C
1. Do not apply input voltage exceeding VDD or 7 V.
2. If Ta > 25°C,
MMPAK-8: derate by –1.45 mW/°C
TSSOP-8: derate by –1.92 mW/°C
Electrical Characteristics
DC Characteristics
(Ta = 25°C, VDD = 3.0 V, VSS = 0 V)
Item
Input offset voltage
Input bias current
Input offset current
Common mode input voltage range
Supply current
Output source current
Output sink current
Open loop voltage gain
Common mode rejection ratio
Power supply rejection ratio
Output high voltage
Output low voltage
Note:
Symbol
VIO
IIB
IIO
VCM
IDD
IOSOURCE
IOSINK
AV
CMRR
PSRR
VOH
VOL
Min
—
—
—
–0.1
—
7.5
7.5
55
50
55
2.9
—
Typ
—
(1)
(1)
—
120
15
15
80
80
80
—
—
Max
6
—
—
1.8
340
—
—
—
—
—
—
0.1
Unit
mV
pA
pA
V
µA
mA
mA
dB
dB
dB
V
V
Test Conditions
VIN = 1.5 V, RL = 1 MΩ
VIN = 1.5 V
VIN = 1.5 V
VIN(+) = 1.0 V, RL = ∞
VOUT = 2.5 V
VOUT = 0.5 V
RL = 100 kΩ
VIN1 = 0 V, VIN2 = 1.8 V
VDD1 = 2.7 V, VDD2 = 5.5 V
RL = 2 kΩ to VSS
RL = 2 kΩ to VDD
( ) : Design specification
AC Characteristics
(Ta = 25°C, VDD = 3.0 V, VSS = 0 V)
Slew rate
Item
Symbol
SRr
SRf
Gain bandwidth product
GBW
Note:
( ) : Design specification
REJ03D0859-0200 Rev.2.00 Nov 30, 2007
Page 3 of 14
Min
—
—
Typ
(1)
(1)
Max
—
—
Unit
V/µs
—
(1.5)
—
MHz
Test Conditions
VIN = 1.5 V, CL = 15 pF
(VINL = 0.2 V, VINH = 1.7 V)
VIN = 1.5 V, CL = 15 pF
HA1630D07
Table of Graphs
Supply current
Electrical Characteristics
IDD
Output high voltage
Output low voltage
Output source current
VOH
VOL
IOSOURCE
Output sink current
IOSINK
Input offset voltage
VIO
Common mode input voltage range
VCM
Common mode rejection ratio
Power supply rejection ratio
Input bias current
CMRR
PSRR
IIB
Slew rate (rising)
SRr
Slew rate (falling)
SRf
Open loop gain
AV
Phase margin
Channel separation
Noise input voltage
PM
CS
VNI
REJ03D0859-0200 Rev.2.00 Nov 30, 2007
Page 4 of 14
vs. Supply voltage
vs. Temperature
vs. Rload
vs. Rload
vs. Output high voltage
vs. Temperature
vs. Output low voltage
vs. Temperature
vs. Supply voltage
vs. Input voltage
vs. Temperature
vs. Supply voltage
vs. Temperature
vs. Input voltage
vs. Supply voltage
vs. Input voltage
vs. Temperature
vs. Cload
vs. Temperature
Time waveform
vs. Cload
vs. Temperature
Time waveform
vs. Rload
vs. Frequency
vs. Cload
vs. Frequency
vs. Frequency
Characteristic
Curves
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25, 26
27
28
29
Test
Circuit No.
1
1
2
3
4
4
5
5
6
6
7
8
8
9
10
11, 12
11, 12
13
13
13
13
13
13
14
14
14
15
16
HA1630D07
Test Circuits
(Unless otherwise noted, VDD = 3 V, VSS = 0 V, Ta = 25°C)
1. Supply Current, IDD
−
+
2. Output High Voltage, VOH
A
−
+
VDD
1V
V
1V
4. Output Source Current, IOSOURCE
3. Output Low Voltage, VOL
RLOAD
= 2 kΩ
V
−
+
VDD
RLOAD
= 2 kΩ
−
+
VDD
1V
VDD
A
1V
5. Output Sink Current, IOSINK
VOUT
6. Input Offset Voltage vs. Operating Voltage
1 MΩ
1 kΩ
−
+
VDD
A
1V
−
+
VOUT
V
1 kΩ
VDD
VDD/2
VOUT
1 MΩ
VIO = VOUT / 1001
7. Input Offset Voltage, VIO
8. Common Mode Input Voltage Range, VCM
1 MΩ
1 kΩ
1 kΩ
1 MΩ
1 MΩ
VOUT
V
−
+
1 kΩ
1.5 V
–1.5 V
1 kΩ
VIN
−
+
1 MΩ
VCML
1.5 V
VIO = VOUT / 1001
REJ03D0859-0200 Rev.2.00 Nov 30, 2007
Page 5 of 14
VOUT
V
Note:
VCML and VCMH are values
of VIN when VIO changes
more than 50 dB taking
VIN = 0 V as reference.
VDD
VIO
VIN = 0 V
VIN
VCMH
HA1630D07
Test Circuits (cont.)
(Unless otherwise noted, VDD = 3 V, VSS = 0 V, Ta = 25°C)
9. Common Mode Rejection Ratio, CMRR
1 MΩ
1 kΩ
VOUT
V
−
+
1.5 V
1 kΩ
VIN
Measure
Point
Calculate
VIO
–1.5 V
VOUT1
VIO1 = VOUT1 / 1001
0.3 V
VOUT2
VIO2 = VOUT2 / 1001
VDD
Measure
Point
Calculate
VIO
2.7 V
VOUT1
VIO1 = VOUT1 / 1001
VOUT2
VIO2 = VOUT2 / 1001
VIN
–1.5 V
1 MΩ
CMRR Calculation
CMRR = 20log10
|[VIO2 – VIO1]|
0.3 – (–1.5 V)
10. Power Supply Rejection Ratio, PSRR
1 MΩ
1 kΩ
1 kΩ
1 MΩ
VOUT
V
−
+
VDD/2
–VDD/2
5.5 V
11. Input Bias Current, IIB+
12. Input Bias Current, IIB–
−
A +
A
VDD
VIN
CMRR Calculation
PSRR = 20log10
−
+
|[VIO2 – VIO1]|
5.5 V – 2.7 V
VDD
VIN
13. Slew Rate (Large Signal Input)
VIN
1.7 V – 0.2 V
−
+
50 Ω
VOUT
V
VDD
15 pF
90%
∆Vtr
VOUT
10%
∆ttr
REJ03D0859-0200 Rev.2.00 Nov 30, 2007
Page 6 of 14
SRr = ∆Vtr / ∆ttr
SRf = ∆Vtf / ∆ttf
90%
∆Vtf
10%
∆ttf
HA1630D07
Test Circuits (cont.)
(Unless otherwise noted, VDD = 3 V, VSS = 0 V, Ta = 25°C)
14. Open Loop Voltage Gain, AV
1 MΩ
10 kΩ
10 to 100 MHz
–40 dBm
VOUT
V
−
+
V
VIN
50 Ω
1.5 V
AV = 20log10
101 × |VOUT|
|VIN|
–1.5 V
15. Channel Separation, CS
10 kΩ
10 kΩ
10 to 100 MHz
10 dBm
−
+
50 Ω
1 MΩ
VOUT1
V
10 kΩ
1.5 V
–1.5 V
Channel 2
CS = 20log10
101 × |VOUT2|
16. Noise Input Voltage, VNI
1 MΩ
−
+
VOUT
V
1.5 V
–1.5 V
REJ03D0859-0200 Rev.2.00 Nov 30, 2007
Page 7 of 14
VOUT2
V
–1.5 V
Channel 1
1 kΩ
−
+
VNI =
VOUT
1001
|VOUT1|
1.5 V
HA1630D07
Characteristic Curves
Figure 2 HA1630D07
Supply Current vs. Ambient Temperature
180
Supply Current, IDD (µA)
Supply Current, IDD (µA)
Figure 1 HA1630D07
Supply Current vs. Supply Voltage
160
140
120
100
80
60
40
2
3
4
5
Supply Voltage, VDD (V)
6
180
160
140
80
60
40
–50
3.0
2.9
2.8
2.7
100
1k
10 k
Resistor Load, RL (Ω)
100 k
Figure 5 HA1630D07
Output High Voltage vs. Output Source Current
6
VDD = 5.5 V
5
VDD = 5.0 V
4
3
VDD = 3.0 V
2
1
VDD = 2.7 V
0
0
10
20
30
40
50
Output Source Current, IOSOURCE (mA)
REJ03D0859-0200 Rev.2.00 Nov 30, 2007
Page 8 of 14
Output Low Voltage, VOL (V)
3.1
–25
0
25
50
75
100
Ambient Temperature, Ta (°C)
Figure 4 HA1630D07
Output Low Voltage vs. Resistor Load
Output Source Current, IOSOURCE (mA)
Output High Voltage, VOH (V)
Output High Voltage, VOH (V)
VDD = 3.0 V
VDD = 2.7 V, 3.0 V
100
Figure 3 HA1630D07
Output High Voltage vs. Resistor Load
3.2
VDD = 5.5 V
120
0.3
VDD = 3.0 V
0.2
0.1
0.0
–0.1
100
1k
10 k
Resistor Load, RL (Ω)
100 k
Figure 6 HA1630D07
Output Source Current vs. Ambient Temperature
30
VDD = 3.0 V
25
20
15
10
5
–50
–25
0
25
50
75
100
Ambient Temperature, Ta (°C)
HA1630D07
VDD = 2.7 V
1
0
VDD = 5.0 V
VDD = 5.5 V
0
10
20
30
40
50
Output Sink Current, IOSINK (mA)
Figure 9 HA1630D07
Input Offset Voltage vs. Supply Voltage
6
4
2
0
–2
–4
–6
2
3
4
5
Supply Voltage, VDD (V)
6
Output Sink Current, IOSINK (mA)
VDD = 3.0 V
2
Input Offset Voltage, VIO (mV)
Figure 7 HA1630D07
Output Low Voltage vs. Output Sink Current
3
Figure 11 HA1630D07
Input Offset Voltage vs. Ambient Temperature
6
VDD = 2.7 V, 3.0 V, 5.5 V
4
2
0
–2
–4
–6
–50
–25
0
25
50
75
100
Ambient Temperature, Ta (°C)
REJ03D0859-0200 Rev.2.00 Nov 30, 2007
Page 9 of 14
Figure 8 HA1630D07
Output Sink Current vs. Ambient Temperature
30
VDD = 3.0 V
25
20
15
10
5
–50
–25
0
25
50
75
100
Ambient Temperature, Ta (°C)
Figure 10 HA1630D07
Input Offset Voltage vs. Input Voltage
15
VDD = 1.5 V, VSS = –1.5 V
10
5
0
–5
–10
–15
–2.5
–1.5
–0.5
0.5
Input Voltage, VIN (V)
1.5
Figure 12 HA1630D07
Common Mode Input Voltage vs. Supply Voltage
5
Common Mode
Input Voltage, VCM (V)
Input Offset Voltage, VIO (mV)
Input Offset Voltage, VIO (mV)
Output Low Voltage, VOL (V)
Characteristic Curves (cont.)
4
VCM+
3
2
Common Mode
Input Voltage Range
1
0
–1
–2
VCM–
2
3
4
5
Supply Voltage, VDD (V)
6
HA1630D07
VDD = 3.0 V
VCM+
1.0
Common Mode
Input Voltage Range
0.0
VCM–
Input Bias Current, IIB (pA)
Power Supply
Rejection Ratio, PSRR (dB)
–1.0
–50
–25
0
25
50
75
100
Ambient Temperature, Ta (°C)
Figure 15 HA1630D07
Power Supply Rejection Ratio vs. Supply Voltage
120
100
80
60
40
20
0
2
3
4
5
Supply Voltage, VDD (V)
6
Figure 17 HA1630D07
Input Bias Current vs. Ambient Temperature
100
VDD = 3.0 V
50
0
–50
–100
–50
–25
0
25
50
75
100
Ambient Temperature, Ta (°C)
REJ03D0859-0200 Rev.2.00 Nov 30, 2007
Page 10 of 14
Figure 14 HA1630D07
Common Mode Rejection Ratio vs. Input Voltage
120
VDD = 1.5 V, VSS = –1.5 V
100
80
60
40
20
0
–2
–1
0
Input Voltage, VIN (V)
1
Figure 16 HA1630D07
Input Bias Current vs. Input Voltage
Input Bias Current, IIB (pA)
2.0
Slew Rate (rising), SRr (V/µs)
Common Mode
Input Voltage, VCM (V)
Figure 13 HA1630D07
Common Mode Input Voltage vs. Ambient Temperature
3.0
Common Mode
Rejection Ratio, CMRR (dB)
Characteristic Curves (cont.)
100
VDD = 3.0 V
50
0
–50
–100
0
1
2
Input Voltage, VIN (V)
3
Figure 18 HA1630D07
Slew Rate (rising) vs. Capacitive Load
3.0
VDD = 3.0 V
2.0
1.0
0.0
0
100
200
300
Capacitive Load, CL (pF)
400
HA1630D07
Characteristic Curves (cont.)
3.0
Figure 20 HA1630D07
Slew Rate (rising)
VDD = 2.7 V, 3.0 V, 5.5 V
2.0
SRr = 1.10 V/µs
1.0
0.0
–50
–25
0
25
50
75
100
Ambient Temperature, Ta (°C)
Figure 21 HA1630D07
Slew Rate (falling) vs. Capacitive Load
3.0
VDD = 3.0 V
2.0
1.0
0.0
0
50 100 150 200 250 300 350 400
Capacitive Load, CL (pF)
Slew Rate (falling), SRf (V/µs)
Slew Rate (falling), SRf (V/µs)
Slew Rate (rising), SRr (V/µs)
Figure 19 HA1630D07
Slew Rate (rising) vs. Ambient Temperature
Figure 22 HA1630D07
Slew Rate (falling) vs. Ambient Temperature
3.0
VDD = 2.7 V, 3.0 V, 5.5 V
2.0
1.0
0.0
–50
Figure 23 HA1630D07
Slew Rate (falling)
REJ03D0859-0200 Rev.2.00 Nov 30, 2007
Page 11 of 14
Figure 24 HA1630D07
Open Loop Gain vs. Resistor Load
Open Loop Gain, AV (dB)
SRf = 1.23 V/µs
–25
0
25
50
75
100
Ambient Temperature, Ta (°C)
120
VDD = 3.0 V
100
80
60
40
20
0
100
1k
10 k
Resistor Load, RL (Ω)
100 k
HA1630D07
Characteristic Curves (cont.)
Figure 26 HA1630D07
Open Loop Gain, Phase vs. Frequency
0
270
180
90
Phase
0
–50
–100
10
100
1 k 10 k 100 k 1 M
Frequency, f (Hz)
–90
10 M
100
0
50
40
30
20
10
0
50 100 150 200 250 300 350 400
Capacitive Load, CL (pF)
Figure 29 HA1630D07
Noise Input Voltage vs. Frequency
1.0
VDD = 3.0 V
0.8
0.6
0.4
0.2
0.0
10
100
1k
Frequency, f (Hz)
REJ03D0859-0200 Rev.2.00 Nov 30, 2007
Page 12 of 14
10 k
Channel Separation, CS (dB)
Phase Margin, PM (deg.)
Noise Input Voltage, VNI (µV/√Hz)
60
0
180
90
Phase
–50
–100
10
270
0
100
1 k 10 k 100 k 1 M
Frequency, f (Hz)
–90
10 M
Figure 28 HA1630D07
Channel Separation vs. Frequency
VDD = 3.0 V
70
Gain
50
Figure 27 HA1630D07
Phase Margin vs. Capacitive Load
80
VDD = 3.0 V
CL = 400 pF
150
VDD = 3.0 V
100
50
0
–50
10
100
1 k 10 k 100 k 1 M
Frequency, f (Hz)
10 M
Phase (deg.)
Gain
50
VDD = 3.0 V
RL = 100 kΩ
Open Loop Gain, AV (dB)
100
Phase (deg.)
Open Loop Gain, AV (dB)
Figure 25 HA1630D07
Open Loop Gain, Phase vs. Frequency
HA1630D07
Package Dimensions
Package Name
MMPAK-8
JEITA Package Code
P-LSOP8-2.8 x 2.95 - 0.65
RENESAS Code
PLSP0008JC-A
Previous Code

MASS[Typ.]
0.02 g
Unit: mm
0.13 +0.12
-0.03
2.8 ± 0.1
4.0 ± 0.3
2.95 ± 0.2
0.6
0 to 0.1
0.65
0.2
0.1 M
+0.1
-0.05
1.1 ± 0.1
0.3
1.95
0.1
JEITA Package Code
P-TSSOP8-4.4x3-0.65
RENESAS Code
PTSP0008JC-B
*1
Previous Code
TTP-8DAV
MASS[Typ.]
0.034g
D
8
F
5
NOTE)
1. DIMENSIONS"*1 (Nom)"AND"*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION"*3"DOES NOT
INCLUDE TRIM OFFSET.
c
HE
*2
E
bp
Terminal cross section
( Ni/Pd/Au plating )
Reference Dimension in Millimeters
Symbol
Index mark
L1
1
e
*3
bp
x
M
θ
A1
A
Z
4
L
Detail F
y
REJ03D0859-0200 Rev.2.00 Nov 30, 2007
Page 13 of 14
D
E
A2
A1
A
bp
b1
c
c1
θ
HE
e
x
y
Z
L
L1
Min Nom Max
3.00 3.30
4.40
0.03 0.07 0.10
1.10
0.15 0.20 0.25
0.10 0.15 0.20
0°
8°
6.20 6.40 6.60
0.65
0.13
0.10
0.805
0.40 0.50 0.60
1.00
HA1630D07
Taping & Reel Specification
[Taping]
W
12
12
P
8
4.0
Ao
6.9
3.15
Bo
3.6
4.35
Ko
1.7
—
E
1.75
—
F
5.5
5.5
D1
1.5
1.05
4.0
φ 1.5
Maximum Storage No.
3,000 pcs/reel
3,000 pcs/reel
Unit: mm
1.75
Package Code
TSSOP-8
MMPAK-8
2.0
Cover
Tape
W
B0
F
A0
K0
D1
P
Tape withdraw direction
Tape width
12
12
W1
17.4
17.0
W2
13.4
13.0
A
330
178
φA
[Reel]
Package
TSSOP-8
MMPAK-8
φ13.0 ± 0.5
W1
[Ordering Information]
Ordering Unit
3,000 pcs
2.0
2.0
W2
Mark Indication
• TSSOP-8
• MMPAK-8
0 D 0 7
D 0 7
Trace Code
Trace Code
REJ03D0859-0200 Rev.2.00 Nov 30, 2007
Page 14 of 14
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.
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7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications
or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality
and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or
undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall
have no liability for damages arising out of the uses set forth above.
8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below:
(1) artificial life support devices or systems
(2) surgical implantations
(3) healthcare intervention (e.g., excision, administration of medication, etc.)
(4) any other purposes that pose a direct threat to human life
Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing
applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all
damages arising out of such applications.
9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range,
movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages
arising out of the use of Renesas products beyond such specified ranges.
10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain
rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage
caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and
malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software
alone is very difficult, please evaluate the safety of the final products or system manufactured by you.
11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as
swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products.
Renesas shall have no liability for damages arising out of such detachment.
12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas.
13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have
any other inquiries.
http://www.renesas.com
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology (Shanghai) Co., Ltd.
Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120
Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7858/7898
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2377-3473
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 3518-3399
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
Renesas Technology Malaysia Sdn. Bhd
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
© 2007. Renesas Technology Corp., All rights reserved. Printed in Japan.
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