UNISONIC TECHNOLOGIES CO., LTD 2SC3468

UNISONIC TECHNOLOGIES CO., LTD
2SC3468
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
FOR VIDEO OUTPUT OF
HIGH-DEFINITION CRT
DISPLAYS

FEATURES
* High breakdown voltage: VCBO, VCEO≧300V
* Small reverse transfer capacitance and excellent high frequency
characteristicF

ORDERING INFORMATION
Ordering Number
2SC3468G-x-AB3-R
Note: Pin Assignment: B: Base C: Collector

Package
SOT-89
Pin Assignment
1
2
3
B
C
E
Packing
Tape Reel
E: Emitter
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-to-Base Voltage
VCBO
300
V
Collector-to-Emitter Voltage
VCEO
300
V
Emitter-to-Base Voltage
VEBO
5
V
Collector Current
IC
100
mA
Collector Current (Pulse)
ICP
200
mA
Collector Dissipation
PC
1.0
W
°C
Junction Temperature
TJ
0 ~ +125
°C
Storage Temperature
TSTG
-65 ~ +125
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0°C ~70°C operating temperature
range and assured by design from –20°C ~85°C.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Output Capacitance
Reverse Transfer Capacitance

SYMBOL
ICBO
IEBO
hFE
fT
VCE (sat)
VBE (sat)
V(BR) CBO
V(BR) CEO
V(BR) EBO
Cob
Cre
TEST CONDITIONS
VCB = 200V, IE = 0
VEB = 4V, IC = 0
VCE = 10V, IC = 10mA
VCE = 30V, IC = 10mA
IC = 20mA, IB = 2mA
IC = 20mA, IB = 2mA
IC = 10µA, IE = 0
IC = 1mA, RBE = ∞
IE = 10µA, IC = 0
VCB = 30V, f = 1MHz
VCB = 30V, f = 1MHz
MIN
TYP
40
MAX
0.1
0.1
320
UNIT
µA
µA
150
MHz
V
V
V
V
V
pF
pF
0.6
1.0
300
300
5
2.6
1.8
CLASSIFICATION of hFE
RANK
RANGE
C
40 ~ 80
D
60 ~ 120
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
E
100 ~ 200
F
160 ~ 320
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NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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
NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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