UNISONIC TECHNOLOGIES CO., LTD 2SC3468 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FOR VIDEO OUTPUT OF HIGH-DEFINITION CRT DISPLAYS FEATURES * High breakdown voltage: VCBO, VCEO≧300V * Small reverse transfer capacitance and excellent high frequency characteristicF ORDERING INFORMATION Ordering Number 2SC3468G-x-AB3-R Note: Pin Assignment: B: Base C: Collector Package SOT-89 Pin Assignment 1 2 3 B C E Packing Tape Reel E: Emitter MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 5 QW-R208-037.B 2SC3468 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-to-Base Voltage VCBO 300 V Collector-to-Emitter Voltage VCEO 300 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 100 mA Collector Current (Pulse) ICP 200 mA Collector Dissipation PC 1.0 W °C Junction Temperature TJ 0 ~ +125 °C Storage Temperature TSTG -65 ~ +125 Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The device is guaranteed to meet performance specification within 0°C ~70°C operating temperature range and assured by design from –20°C ~85°C. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Output Capacitance Reverse Transfer Capacitance SYMBOL ICBO IEBO hFE fT VCE (sat) VBE (sat) V(BR) CBO V(BR) CEO V(BR) EBO Cob Cre TEST CONDITIONS VCB = 200V, IE = 0 VEB = 4V, IC = 0 VCE = 10V, IC = 10mA VCE = 30V, IC = 10mA IC = 20mA, IB = 2mA IC = 20mA, IB = 2mA IC = 10µA, IE = 0 IC = 1mA, RBE = ∞ IE = 10µA, IC = 0 VCB = 30V, f = 1MHz VCB = 30V, f = 1MHz MIN TYP 40 MAX 0.1 0.1 320 UNIT µA µA 150 MHz V V V V V pF pF 0.6 1.0 300 300 5 2.6 1.8 CLASSIFICATION of hFE RANK RANGE C 40 ~ 80 D 60 ~ 120 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw E 100 ~ 200 F 160 ~ 320 2 of 5 QW-R208-037.B 2SC3468 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R208-037.B 2SC3468 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R208-037.B 2SC3468 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R208-037.B