UNISONIC TECHNOLOGIES CO., LTD S8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The UTC S8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier and general purpose applications. 1 TO-92 FEATURES * Collector current up to 700mA * Collector-Emitter voltage up to 20 V * Complementary to UTC S8050 ORDERING INFORMATION Order Number Lead Free Plating Halogen Free S8550L-x-T92-B S8550G-x-T92-B S8550L-x-T92-K S8550G-x-T92-K Package TO-92 TO-92 Pin Assignment 1 2 3 E B C E B C Packing Tape Box Bulk MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R201-014. E S8550 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified.) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5 V Collector Current IC -700 mA Collector Dissipation (TA=25°C) PC 1 W Junction Temperature TJ 150 °C Storage Temperature TSTG -65 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(SAT) VBE(SAT) VBE fT Cob TEST CONDITIONS IC =-100μA, IE =0 IC =-1mA, IB =0 IE =-100μA, IC =0 VCB =-30V, IE =0 VEB =-5V, IC =0 VCE =-1V, IC =-1mA VCE =-1V, IC =-150mA VCE =-1V, IC =-500mA IC =-500mA, IB =-50mA IC =500mA, IB =-50mA VCE =-1V, IC =-10mA VCE =-10V, IC =-50mA VCB =10V, IE =0, f =1MHz MIN -30 -20 -5 TYP MAX -1 -100 100 120 40 UNIT V V V μA nA 400 -0.5 -1.2 -1.0 100 9.0 V V V MHz pF CLASSIFICATION OF hFE2 RANK RANGE C 120-200 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw D 160-300 E 280-400 2 of 4 QW-R201-014.E S8550 PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS Static Characteristics IB=-3.0mA IB=-2.5mA IB=-2.0mA -0.3 IB=-1.5mA -0.2 IB=-1.0mA -0.1 IB=-0.5mA 0 Base-Emitter on Voltage Saturation Voltage, (mV) -101 -100 -0.2 -0.4 -0.6 -0.8 Base-Emitter Voltage, VBEO (V) 102 101 100 -100 1 2 -10 -10 Collector Current, IC (mA) 3 -10 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw -103 Saturation Voltage -103 VBE(SAT) -102 VCE(SAT) 103 VCE=-10V -100 -101 -102 Collector Current, IC (mA) IC=10xIB -101 -10-1 -1.0 Current Gain-Bandwidth Product 103 101 -104 VCE=-1V -10-1 0 102 100 -10-1 -0.4 -0.8 -1.2 -1.6 -2.0 Collector-Emitter Voltage, VCEO (V) -102 Collector Current, IC (mA) VCE=-1V DC Current Gain, hFE -0.4 0 Current Gain-Bandwidth Product, fT (MHz) DC Current Gain 103 Capacitance, COB (pF) Collector Current, IC (mA) -0.5 -100 -101 -102 Collector Current, IC (mA) -103 Collector Output Capacitance f=1MHz IE=0 102 101 100 -100 -101 -102 -103 Collector-Base Voltage, VCBO (V) 3 of 4 QW-R201-014.E S8550 PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R201-014.E