Datasheet

UNISONIC TECHNOLOGIES CO., LTD
S8550
PNP SILICON TRANSISTOR
LOW VOLTAGE HIGH
CURRENT SMALL SIGNAL PNP
TRANSISTOR

DESCRIPTION
The UTC S8550 is a low voltage high current small signal PNP
transistor, designed for Class B push-pull audio amplifier and
general purpose applications.

1
TO-92
FEATURES
* Collector current up to 700mA
* Collector-Emitter voltage up to 20 V
* Complementary to UTC S8050

ORDERING INFORMATION
Order Number
Lead Free Plating
Halogen Free
S8550L-x-T92-B
S8550G-x-T92-B
S8550L-x-T92-K
S8550G-x-T92-K

Package
TO-92
TO-92
Pin Assignment
1
2
3
E
B
C
E
B
C
Packing
Tape Box
Bulk
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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S8550

PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-30
V
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-700
mA
Collector Dissipation (TA=25°C)
PC
1
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-65 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance

SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
hFE3
VCE(SAT)
VBE(SAT)
VBE
fT
Cob
TEST CONDITIONS
IC =-100μA, IE =0
IC =-1mA, IB =0
IE =-100μA, IC =0
VCB =-30V, IE =0
VEB =-5V, IC =0
VCE =-1V, IC =-1mA
VCE =-1V, IC =-150mA
VCE =-1V, IC =-500mA
IC =-500mA, IB =-50mA
IC =500mA, IB =-50mA
VCE =-1V, IC =-10mA
VCE =-10V, IC =-50mA
VCB =10V, IE =0, f =1MHz
MIN
-30
-20
-5
TYP
MAX
-1
-100
100
120
40
UNIT
V
V
V
μA
nA
400
-0.5
-1.2
-1.0
100
9.0
V
V
V
MHz
pF
CLASSIFICATION OF hFE2
RANK
RANGE
C
120-200
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
D
160-300
E
280-400
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TYPICAL CHARACTERISTICS

Static Characteristics
IB=-3.0mA
IB=-2.5mA
IB=-2.0mA
-0.3
IB=-1.5mA
-0.2
IB=-1.0mA
-0.1
IB=-0.5mA
0
Base-Emitter on Voltage
Saturation Voltage, (mV)
-101
-100
-0.2
-0.4
-0.6
-0.8
Base-Emitter Voltage, VBEO (V)
102
101
100
-100
1
2
-10
-10
Collector Current, IC (mA)
3
-10
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
-103
Saturation Voltage
-103
VBE(SAT)
-102
VCE(SAT)
103
VCE=-10V
-100
-101
-102
Collector Current, IC (mA)
IC=10xIB
-101
-10-1
-1.0
Current Gain-Bandwidth Product
103
101
-104
VCE=-1V
-10-1
0
102
100
-10-1
-0.4
-0.8
-1.2
-1.6
-2.0
Collector-Emitter Voltage, VCEO (V)
-102
Collector Current, IC (mA)
VCE=-1V
DC Current Gain, hFE
-0.4
0
Current Gain-Bandwidth Product, fT
(MHz)
DC Current Gain
103
Capacitance, COB (pF)
Collector Current, IC (mA)
-0.5
-100
-101
-102
Collector Current, IC (mA)
-103
Collector Output Capacitance
f=1MHz
IE=0
102
101
100
-100
-101
-102
-103
Collector-Base Voltage, VCBO (V)
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UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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