UNISONIC TECHNOLOGIES CO., LTD 2SC4774

UNISONIC TECHNOLOGIES CO., LTD
2SC4774
NPN SILICON TRANSISTOR
HIGH FREQUENCY AMPLIFIER
TRANSISTOR, RF SWITCHING
(6V, 50mA)

FEATURES
* Very low output-on resistance (RON).
* Low capacitance.

ORDERING INFORMATION
Order Number
Package
2SC4774G-AB3-R
SOT-323
Note: Pin Assignment: E: Emitter B: Base C: Collector

Pin Assignment
1
2
3
E
B
C
Packing
Tape Reel
MARKING
C47G
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Copyright © 2015 Unisonic Technologies Co., Ltd
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
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
12
V
Collector-Emitter Voltage
VCEO
6
V
Emitter-Base Voltage
VEBO
3
V
Collector Current
IC
50
mA
Collector Power Dissipation
PD
0.2
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL SPECIFICATIONS (TA=25C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Output-On Resistance
SYMBOL
BVCBO
BVCEO
BVEBO
VCE(SAT)
ICBO
IEBO
hFE
fT
Cob
RON
TEST CONDITIONS
IC =10μA
IC =1mA
IE =10μA
IC/IB =10mA/1mA
VCB =10V
VEB =2V
VCE/IC =5V/5mA
VCE =5V, IE = −10mA, f=200MHz
VCB =10V, IE =0A, f=1MHz
IB =3mA, VIN =100mVrms, f=500kHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
12
6
3
270
300
TYP
800
1
2
MAX UNIT
V
V
V
0.3
V
0.5
μA
0.5
μA
560
MHz
1.7
pF
Ω
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TYPICAL CHARACTERISTIC
Grounded Emitter Output Characteristics (Ⅰ)
10
Grounded Emitter Output Characteristics (Ⅱ)
50
35mA
Ta=25℃
Ta=25℃
25mA
20mA
6
15mA
4
10mA
5mA
2
IB=0μA
0
0
2
1
3
4
UNISONIC TECHNOLOGIES CO., LTD
0.3mA
0.2mA
30
0.1mA
20
10
IB=0mA
0
0.1
0.2
0.3
0.4
0.5
Collector to Emitter Voltage, VCE (V)
DC Current Transfer Ratio, hFE
-25℃
25℃
125℃
40
A
A
5m 0.4m
0.
0
5
Collector to Emitter Voltage, VCE (V)
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1.0m
A
8
Collector Current, IC (mA)
Collector Current, IC (mA)
30mA
Collector Current, IC (mA)

NPN SILICON TRANSISTOR
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TYPICAL CHARACTERISTIC(Cont.)
Output Capacitiance, Cob (pF)
Feeback Capacitiance, Cre (pF)

NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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