UNISONIC TECHNOLOGIES CO., LTD 2SB647 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL DESCRIPTION The UTC 2SB647 is a PNP epitaxial silicon transistor, which can be used as a low frequency power amplifier. APPLICATION * Low frequency power amplifier ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB647L-x-T9N-B 2SB647G-x-T9N-B 2SB647L-x-T9N-K 2SB647G-x-T9N-K Package TO-92NL TO-92NL Pin Assignment 1 2 3 E C B E C B Packing Tape Box Bulk MARKING INFORMATION PACKAGE MARKING TO-92NL www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R211-010.C 2SB647 PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -6 V Collector Current IC -1 A Collector Peak Current ICP -2 A Collector Power Dissipation PC 0.9 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. PW≤10ms, Duty cycle≤20% ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cutoff Current DC Current Transfer Ratio Collector-Emitter Saturation Voltage Base to Emitter Saturation Voltage Gain Bandwidth Product Collector Output Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(SAT) VBE(SAT) fT Cob TEST CONDITIONS IC= -10µA, IE =0 IC= -1mA,RBE =∞ IE= -10μA, IC=0 VCB= -120V, IE=0 VEB=-6V, IC=0 VCE= -5V, IC= -150mA (note) VCE= -5V, IC= -500mA (note) IC= -500mA, IB= -50mA (note) IC=500mA, IB=50mA VCE= -5V, IC= -150mA VCB= -10V, IE=0, f=1MHz MIN -120 -80 -6 60 40 TYP MAX UNIT V V V -500 nA -500 nA 320 -0.5 -1.1 140 20 V V MHz pF CLASSIFICATION OF hFE1 RANK RANGE B 60-120 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw C 100-200 D 160-320 2 of 4 QW-R211-010.C 2SB647 PNP EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS Maximum Collector Dissipation Curve 0.4 0 -200 VCE =-5V PULSE -5 Base to Emitter Saturation Voltage, VBE(sat) (V) ℃ ℃ -25 Ta=2 5 Ta= -20 -10 -2 -1 0 Collector to Emitter Saturation Voltage, VCE(sat) (V) Typical Transfer Characteristics -100 -50 -0.8 -0.6 -0.4 -1.0 -0.2 -0.4 -0.6 -0.8 Base to Emitter Voltage, VBE (V) 5 Ta=2 Ta=75 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw IB =0 Pc =0.9W -2 -1 -0.2 0 50 100 150 Ambient Temperature, Ta (℃) Ta =7 5℃ Collector Current, Ic (mA) -500 -120 -100 -80 -60 -40 -30 -20 -10 -5 -0.5m A -2 -4 -6 -8 -10 Collector to Emitter Voltage, VCE (V) DC Current Transfer Ratio vs.Collector Current 600 VCE =-5V 500 PULSE 400 300 200 100 0 -1 Ta=75 ℃ Ta=25 ℃ Ta=-25 ℃ -100 -300 -1000 -3 -10 -30 Collector Current, Ic (mA) Gain Bandwidth Product, fT (MHz) 0.8 Typical Output Characteristics -1.0 Collector Current, Ic (A) 1.2 DC Current Transfer Ratio, hFE Collector Power Dissipation, Pc (W) 3 of 4 QW-R211-010.C 2SB647 PNP EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS (Cont.) 200 100 Collector Output Capacitance vs.Collector to Base Voltage f= 1 MHz IE =0 50 20 10 5 2 -1 -2 -5 -10 -20 -50 -100 Collector to Base Voltage, VCB (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R211-010.C