Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UF640-Q
Preliminary
Power MOSFET
18A, 200V, 0.20Ω,
N-CHANNEL POWER MOSFET

DESCRIPTION
These kinds of n-channel power MOSFET field effect transistor
have low conduction power loss, high input impedance, and high
switching speed, Linear Transfer Characteristics, so can be use in
a variety of power conversion applications.
The UF640-Q suitable for resonant and PWM converter
topologies.

FEATURES
* RDS(ON) < 0.20Ω @ VGS=10V, ID=10A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen-Free
UF640L-TN3-T
UF640G-TN3-T
Note: Pin Assignment: G: Gate D: Drain S: Source

Package
TO-252
Pin Assignment
1
2
3
G
D
S
Packing
Tube
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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UF640-Q

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATING (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
200
V
Drain-Gate Voltage (RGS=20kΩ)
VDGR
200
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
18
A
Pulsed Drain Current (Note 2)
IDM
72
A
Single Pulse Avalanche Energy Rating (Note 2)
EAS
200
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
3.8
V/ns
Maximum Power Dissipation
PD
123
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ.
3. L=1.2mH, VDD=50V, RG=25Ω, peak IAS=18A, starting TJ=25°C.
4. ISD ≤ 18A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C.

THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case

SYMBOL
θJA
θJC
RATINGS
62.5
110
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250μA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS = Rated BVDSS, VGS = 0V
Gate-Source Leakage Current
IGSS
VGS= ±20V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(THR) VGS=VDS, ID=250μA
Drain-Source On Resistance
RDS(ON) VGS=10V, ID=10A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, ID=1.3A, VDS=50V, IG=100μA
Gate Source Charge
QGS
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VGS=10V, ID=0.5A, VDD=10V, RG=25Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
SOURCE TO DRAIN DIODE SPECIFICATIONS
Diode Forward Voltage (Note)
VSD
TJ=25°C, IS=18A, VGS=0V,
Continuous Source Current
IS
(body diode)
Pulse Source Current (body diode)
ISM
(Note)
Reverse Recovery Time
trr
TJ=25°C, IS=18A, dIS/dt=100A/μs
Reverse Recovery Charge
QRR
TJ=25°C, IS=18A, dIS/dt=100A/μs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNIT
200
2
25
±100
V
μA
nA
4
0.20
V
Ω
805
240
46
pF
pF
pF
23
5.0
8.8
40
140
112
125
nC
nC
nC
ns
ns
ns
ns
170
1.0
2.0
V
18
A
72
A
ns
μC
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UF640-Q
Preliminary
Power MOSFET
Note: Pulse Test: Pulse width ≤ 300μs, duty cycle ≤ 2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R209-079.a
UF640-Q

Preliminary
Power MOSFET
TEST CIRCUIT
VDS
RL
10%
0
RG
VDD
VGS
90%
D.U.T.
90%
VGS
50%
10%
0
tD(ON)
tON
Fig.3 Switching Time Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
tR
PULSE WIDTH
50%
tD(OFF) tF
tOFF
Fig.4 Resistive Switching Waveforms
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UF640-Q
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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