UNISONIC TECHNOLOGIES CO., LTD 5N80 Preliminary Power MOSFET 5 Amps, 800 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 5N80 is a N-channel enhancement mode power MOSFET. It use UTC advanced technology to provide avalanche rugged technology and low gate charge. It can be applied in high current, high speed switching, switch mode power supplies (SMPS), consumer and industrial lighting, DC-AC inverters for welding equipment and uninterruptible power supply(UPS). TO-220 1 TO-220F FEATURES * RDS(on):1.8Ω (TYP.) * Avalanche rugged technology * Low input capacitance * Low gate charge * Application oriented characterization SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 5N80L-TA3-T 5N80G-TA3-T TO-220 5N80L-TF3-T 5N80G-TF3-T TO-220F Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 G G Pin Assignment 2 3 D S D S Packing Tube Tube 1 of 5 QW-R502-483.b 5N80 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VGS=0 VDS 800 V Gate-Source Voltage VGS ±30 V Drain-Gate Voltage RGS=20kΩ VDGR 800 V Continuous ID 5.5 A Drain Current (Continuous) 20 A Pulsed (Note 2) IDM Avalanche Energy Single Pulsed (Note 3) EAS 320 mJ TO-220 125 W Power Dissipation PD TO-220F 40 W TO-220 1 Derating Factor W/°C TO-220F 0.32 Junction Temperature TJ 150 °C Storage Temperature TSTG -65~150 °C Notes : Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER TO-220 Junction to Ambient TO-220F TO-220 Junction to Case TO-220F SYMBOL θJA θJC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 62.5 62.5 1 3.12 UNIT °C/W °C/W 2 of 5 QW-R502-483.b 5N80 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Reverse ON CHARACTERISTICS (Note 1) Gate Threshold Voltage Gate- Source Leakage Current Static Drain-Source On-State Resistance On State Drain Current Forward Transconductance (Note 1) DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall-Time Cross-Over Time SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) ID(ON) gFS CISS COSS CRSS QG QGS QGD tD(ON) tR tD(OFF) tF tC TEST CONDITIONS ID=250µA, VGS=0V VDS=Max Rating VDS= Max Rating×0.8, TC=125°C VGS=+20V VGS=-20V VDS=VGS, ID=250µA VGS=10V, ID=2.5A VGS=10V, ID=2.5A, TC=100°C VDS>ID(ON)×RDS(ON)max, VGS=10V VDS>ID(ON)×RDS(ON)max, ID=2.5A VGS=0V, VDS=25V, f=1.0MHz VGS=10V, VDD=500V, ID=6A VDD=400V, ID=2.5A, RG=50Ω VGS=10V (See test circuit, Fig. 3) VDD=640V, ID=5.5A, RG=50Ω VGS=10V (See test circuit, Fig. 5) VDD=640V, ID=5.5A, RG=50Ω VGS=10V (See test circuit, Fig. 5) SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD ISD=5.5A, VGS=0V (Note 1) Reverse Recovery Time tRR ISD=5.5A,dI/dt=100A/µs, VDD=80V,TJ=150°C Reverse Recovery Charge QRR (See test circuit, Fig. 5) Reverse Recovery Current IRRM Turn-On Current Slope (di/dt)on Source-Drain Current ISD Source-Drain Current (Pulsed) ISDM (Note 1) Notes: 1. Pulsed: Pulse duration=300µs, duty cycle 1.5%. 2. Pulse width limited by safe operating area. 3. Starting TJ=25°C, ID=IAR, VDD=50V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 800 V 250 µA 1000 3 1.8 +100 -100 nA nA 5 2.6 4 V Ω 5 2 A 4 S 1190 165 70 1450 200 85 pF pF pF 75 9 33 50 85 120 30 160 95 nC nC nC ns ns ns ns ns 65 105 150 40 200 200 A/µs 2 V 5.5 ns nC A A 20 A 700 7.7 22 3 of 5 QW-R502-483.b 5N80 Preliminary Power MOSFET SWITCHING TIME TEST CIRCUIT Fig. 2 Unclamped Inductive Waveforms Fig. 1 Unclamped Inductive Load Test Circuits V(BR)DSS L VD VD 2200µF 3.3µF IDM VDD ID ID VDD VI VDD D. U. T. PW Fig. 5 Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time D G 25Ω S A MOS DIODE A FAST DIODE B A L=100µH B B RG G + - UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3.3µF D 1000µF VDD D. U. T. S 85Ω 4 of 5 QW-R502-483.b 5N80 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-483.b