UNISONIC TECHNOLOGIES CO., LTD 3N90

UNISONIC TECHNOLOGIES CO., LTD
3N90
Power MOSFET
3A, 900V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 3N90 provides excellent RDS(ON), low gate charge
and operation with low gate voltages. This device is suitable for
use as a load switch or in PWM applications.

FEATURES
* RDS(ON) < 4.8 Ω @ VGS = 10 V
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness

SYMBOL

RDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
3N90L-TA3-T
3N90G-TA3-T
3N90L-TC3-T
3N90G-TC3-T
3N90L-TF3-T
3N90G-TF3-T
3N90L-TF1-T
3N90G-TF1-T
3N90L-TF2-T
3N90G-TF2-T
3N90L-TQ2-T
3N90G-TQ2-T
3N90L-TQ2-R
3N90G-TQ2-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
3N90L-TA3-T
(1)Packing Type
(2)Package Type
(3)Green Package

Package
TO-220
TO-230
TO-220F
TO-220F1
TO-220F2
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TC3: TO-230, TF3: TO-220F,
TF1: TO-220F1, TF2: TO-220F2, TQ2: TO-263
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R502-290.D
3N90

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (VGS=0V)
VDSS
900
V
Drain-Gate Voltage (RG=20kΩ)
VDGR
900
V
Gate-Source Voltage
VGSS
±30
V
Gate-Source Breakdown Voltage (IGS=±1mA)
BVGSO
30(MIN)
V
Continuous Drain Current
ID
3
A
Pulsed Drain Current
IDM
10
A
Single Pulse Avalanche Energy (Note 3)
EAS
180
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/TO-263
90
TO-230
Power Dissipation
PD
W
TO-220F/TO-220F1
25
TO-220F2
26
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. L = 40mH, IAS = 3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≦3A, di/dt≦200A/μs, VDD≦BVDSS, TJ≦TJ(MAX).

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220/ TO-263
TO-230
TO-220F/TO-220F1
TO-220F2
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
RATING
62.5
UNIT
°C/W
1.38
θJC
5
4.9
°C/W
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QW-R502-290.D
3N90

Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250μA
900
V
Drain-Source Leakage Current
IDSS
VDS=900V, VGS=0V
1
μA
Gate-Source Leakage Current
IGSS
VGS=±30V, VDS=0V
±10 μA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
3 3.75 4.5
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=1.5A
4.1 4.8
Ω
Forward Transconductance (Note 1)
gFS
VDS=15V, ID=1.5A
2.1
S
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
560
pF
Output Capacitance
COSS
VDS=25V, VGS=0V, f=1MHz
69
pF
Reverse Transfer Capacitance
CRSS
11
pF
Equivalent Output Capacitance (Note 2)
COSS(EQ)
VGS=0V, VDS=0V~400V
34
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
56
ns
Turn-On Rise Time
tR
78
ns
VDS=30V, ID=0.5A, RG=25Ω
Turn-Off Delay Time
tD(OFF)
140
ns
Turn-Off Fall Time
tF
72
ns
Total Gate Charge
QG
25.9
nC
VDS=50V, ID=1.3A, VGS=10V
Gate-Source Charge
QGS
7
nC
Gate-Drain Charge
QGD
7.6
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage(Note 1)
VSD
ISD=3A ,VGS=0V
1.6
V
Source-Drain Current
ISD
3
A
Source-Drain Current (Pulsed)
ISDM
12
A
Notes: 1. Pulse width=300μs, Duty cycle≦1.5%
Note: 2. COSS(EQ) is defined asa constant equivalent capacitance giving the same charging time as COSS when VDS
increases from 0to 80% VDSS.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-290.D
3N90

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
Same Type
as D.U.T.
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-290.D
3N90

Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig. 3A Gate Charge Test Circuit
Fig. 4A Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Fig. 2B Switching Waveforms
Fig. 3B Gate Charge Waveform
Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R502-290.D
3N90
Power MOSFET
TYPICAL CHARACTERISTICS

300
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
Drain Current, ID (µA)
Drain Current, ID (µA)
250
200
150
100
200
150
100
50
50
0
0
0
400
600
200
800 1000
Drain-Source Breakdown Voltage, BVDSS(V)
1
2
5
3
4
Gate Threshold Voltage, VTH (V)
Drain Current, ID (mA)
Source-Drain Current, ISD (A)
0
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-290.D