UNISONIC TECHNOLOGIES CO., LTD 3N90 Power MOSFET 3A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N90 provides excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) < 4.8 Ω @ VGS = 10 V * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL RDERING INFORMATION Ordering Number Lead Free Halogen Free 3N90L-TA3-T 3N90G-TA3-T 3N90L-TC3-T 3N90G-TC3-T 3N90L-TF3-T 3N90G-TF3-T 3N90L-TF1-T 3N90G-TF1-T 3N90L-TF2-T 3N90G-TF2-T 3N90L-TQ2-T 3N90G-TQ2-T 3N90L-TQ2-R 3N90G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source 3N90L-TA3-T (1)Packing Type (2)Package Type (3)Green Package Package TO-220 TO-230 TO-220F TO-220F1 TO-220F2 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tube Tape Reel (1) T: Tube, R: Tape Reel (2) TA3: TO-220, TC3: TO-230, TF3: TO-220F, TF1: TO-220F1, TF2: TO-220F2, TQ2: TO-263 (3) L: Lead Free, G: Halogen Free and Lead Free MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-290.D 3N90 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (VGS=0V) VDSS 900 V Drain-Gate Voltage (RG=20kΩ) VDGR 900 V Gate-Source Voltage VGSS ±30 V Gate-Source Breakdown Voltage (IGS=±1mA) BVGSO 30(MIN) V Continuous Drain Current ID 3 A Pulsed Drain Current IDM 10 A Single Pulse Avalanche Energy (Note 3) EAS 180 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/TO-263 90 TO-230 Power Dissipation PD W TO-220F/TO-220F1 25 TO-220F2 26 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. L = 40mH, IAS = 3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≦3A, di/dt≦200A/μs, VDD≦BVDSS, TJ≦TJ(MAX). THERMAL DATA PARAMETER Junction to Ambient Junction to Case TO-220/ TO-263 TO-230 TO-220F/TO-220F1 TO-220F2 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA RATING 62.5 UNIT °C/W 1.38 θJC 5 4.9 °C/W 2 of 6 QW-R502-290.D 3N90 Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 900 V Drain-Source Leakage Current IDSS VDS=900V, VGS=0V 1 μA Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V ±10 μA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 3 3.75 4.5 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=1.5A 4.1 4.8 Ω Forward Transconductance (Note 1) gFS VDS=15V, ID=1.5A 2.1 S DYNAMIC CHARACTERISTICS Input Capacitance CISS 560 pF Output Capacitance COSS VDS=25V, VGS=0V, f=1MHz 69 pF Reverse Transfer Capacitance CRSS 11 pF Equivalent Output Capacitance (Note 2) COSS(EQ) VGS=0V, VDS=0V~400V 34 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 56 ns Turn-On Rise Time tR 78 ns VDS=30V, ID=0.5A, RG=25Ω Turn-Off Delay Time tD(OFF) 140 ns Turn-Off Fall Time tF 72 ns Total Gate Charge QG 25.9 nC VDS=50V, ID=1.3A, VGS=10V Gate-Source Charge QGS 7 nC Gate-Drain Charge QGD 7.6 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage(Note 1) VSD ISD=3A ,VGS=0V 1.6 V Source-Drain Current ISD 3 A Source-Drain Current (Pulsed) ISDM 12 A Notes: 1. Pulse width=300μs, Duty cycle≦1.5% Note: 2. COSS(EQ) is defined asa constant equivalent capacitance giving the same charging time as COSS when VDS increases from 0to 80% VDSS. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-290.D 3N90 Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver Same Type as D.U.T. VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-290.D 3N90 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 3A Gate Charge Test Circuit Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Fig. 2B Switching Waveforms Fig. 3B Gate Charge Waveform Fig. 4B Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-290.D 3N90 Power MOSFET TYPICAL CHARACTERISTICS 300 Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 Drain Current, ID (µA) Drain Current, ID (µA) 250 200 150 100 200 150 100 50 50 0 0 0 400 600 200 800 1000 Drain-Source Breakdown Voltage, BVDSS(V) 1 2 5 3 4 Gate Threshold Voltage, VTH (V) Drain Current, ID (mA) Source-Drain Current, ISD (A) 0 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-290.D