UNISONIC TECHNOLOGIES CO., LTD 3N80 Preliminary Power MOSFET 2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=3.8Ω @VGS=10 V * Ultra low gate charge ( typical 19 nC ) * Low reverse transfer capacitance ( CRSS = typical 11 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness Lead-free: 3N80L Halogen-free: 3N80G SYMBOL 2.Drain 3.Gate 1.Source ORDERING INFORMATION Normal 3N80-TA3-T 3N80-TF3-T Ordering Number Lead Free 3N80L-TA3-T 3N80L-TF3-T Halogen Free 3N80G-TA3-T 3N80G-TF3-T www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd Package TO-220 TO-220F Pin Assignment 1 2 3 G D S G D S Packing Tube Tube 1 of 6 QW-R502-283,a 3N80 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25℃, unless otherwise specified) PARAMETER Drain-Source Voltage (VGS=0V) Drain-Gate Voltage (RG=20kΩ) Gate-Source Voltage Gate-Source Breakdown Voltage (IGS=±1mA) Gate Source ESD(HBM-C=100pF, R=1.5KΩ) Insulation Withstand Voltage (DC) Avalanche Current (Note 2) Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy (Note 3) Peak Diode Recovery dv/dt (Note 4) RATINGS UNIT 800 V 800 V ±30 V 30(MIN) V 2 V TO-220F 2500 V 2.5 A 2.5 A 10 A 170 mJ 4.5 V/ns TO-220 70 Power Dissipation PD W TO-220F 25 Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. starting TJ=25 °C, ID=IAR, VDD=50V 4. ISD≦2.5A, di/dt≦200A/μs, VDD≦BVDSS, TJ≦TJ(MAX). SYMBOL VDSS VDGR VGSS BVGSO VESD(G-S) VISO IAR ID IDM EAS dv/dt THERMAL DATA PARAMETER Junction-to-Ambient Junction-to-Case SYMBOL TO-220 TO-220F TO-220 TO-220F θJA θJC RATING 62.5 62.5 1.78 5 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance Forward Transconductance (Note 1) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance (Note 2) SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge SYMBOL MIN TYP MAX UNIT BVDSS IDSS IGSS VGS=0V, ID=1mA VDS=800V, VGS=0 V VGS=±30V, VDS=0 V 800 VGS(TH) RDS(ON) gFS VDS=VGS, ID=50μA VGS=10V, ID=1.25A VDS=15V, ID=1.25A 3 CISS COSS CRSS COSS(EQ) tD(ON) tR tD(OFF) tF QG QGS QDD UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS VDS=25V, VGS=0V, f=1MHz VGS=0V, VDS=0V~640V VDD=400V, ID=1.25 A, RG=4.7Ω VGS=10 V VDD=640V, ID=2.5A, VGS=10V 1 ±10 3.75 3.8 2.1 4.5 4.5 V μA μA V Ω S 485 57 11 22 pF pF pF pF 17 27 36 40 19 3.2 10.8 ns ns ns ns nC nC nC 2 of 6 QW-R502-283.a 3N80 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage(Note 1) VSD ISD=2.5A ,VGS=0V 1.6 V Source-Drain Current ISD 2.5 A Source-Drain Current (Pulsed) ISDM 10 A Reverse Recovery Current IRRM 8.4 A ISD=2.5A, di/dt=100A/μs, Body Diode Reverse Recovery Time tRR 384 ns VDD=50V, TJ=25°C 1600 nC Body Diode Reverse Recovery Charge QRR Note: 1.Pulse width=300μs, Duty cycle≦1.5% Note: 2.COSS(EQ) is defined asa constant equivalent capacitance giving the same charging time as COSS when VDS increases from 0to 80% VDSS. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-283.a 3N80 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver Same Type as D.U.T. VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-283.a 3N80 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS IAS RD 10V VDD D.U.T. ID(t) VDS(t) VDD tp tp Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Fig. 4B Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-283.a 3N80 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-283.a