UTC-IC 3N80

UNISONIC TECHNOLOGIES CO., LTD
3N80
Preliminary
Power MOSFET
2.5 Amps, 800 Volts
N-CHANNEL POWER MOSFET
„
DESCRIPTION
The UTC 3N80 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
„
FEATURES
* RDS(ON)=3.8Ω @VGS=10 V
* Ultra low gate charge ( typical 19 nC )
* Low reverse transfer capacitance ( CRSS = typical 11 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
„
Lead-free:
3N80L
Halogen-free: 3N80G
SYMBOL
2.Drain
3.Gate
1.Source
„
ORDERING INFORMATION
Normal
3N80-TA3-T
3N80-TF3-T
Ordering Number
Lead Free
3N80L-TA3-T
3N80L-TF3-T
Halogen Free
3N80G-TA3-T
3N80G-TF3-T
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
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QW-R502-283,a
3N80
„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25℃, unless otherwise specified)
PARAMETER
Drain-Source Voltage (VGS=0V)
Drain-Gate Voltage (RG=20kΩ)
Gate-Source Voltage
Gate-Source Breakdown Voltage (IGS=±1mA)
Gate Source ESD(HBM-C=100pF, R=1.5KΩ)
Insulation Withstand Voltage (DC)
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy (Note 3)
Peak Diode Recovery dv/dt (Note 4)
RATINGS
UNIT
800
V
800
V
±30
V
30(MIN)
V
2
V
TO-220F
2500
V
2.5
A
2.5
A
10
A
170
mJ
4.5
V/ns
TO-220
70
Power Dissipation
PD
W
TO-220F
25
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. starting TJ=25 °C, ID=IAR, VDD=50V
4. ISD≦2.5A, di/dt≦200A/μs, VDD≦BVDSS, TJ≦TJ(MAX).
„
SYMBOL
VDSS
VDGR
VGSS
BVGSO
VESD(G-S)
VISO
IAR
ID
IDM
EAS
dv/dt
THERMAL DATA
PARAMETER
Junction-to-Ambient
Junction-to-Case
„
SYMBOL
TO-220
TO-220F
TO-220
TO-220F
θJA
θJC
RATING
62.5
62.5
1.78
5
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance (Note 1)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Equivalent Output Capacitance (Note 2)
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SYMBOL
MIN TYP MAX UNIT
BVDSS
IDSS
IGSS
VGS=0V, ID=1mA
VDS=800V, VGS=0 V
VGS=±30V, VDS=0 V
800
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=50μA
VGS=10V, ID=1.25A
VDS=15V, ID=1.25A
3
CISS
COSS
CRSS
COSS(EQ)
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QDD
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
VDS=25V, VGS=0V, f=1MHz
VGS=0V, VDS=0V~640V
VDD=400V, ID=1.25 A, RG=4.7Ω
VGS=10 V
VDD=640V, ID=2.5A, VGS=10V
1
±10
3.75
3.8
2.1
4.5
4.5
V
μA
μA
V
Ω
S
485
57
11
22
pF
pF
pF
pF
17
27
36
40
19
3.2
10.8
ns
ns
ns
ns
nC
nC
nC
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage(Note 1)
VSD
ISD=2.5A ,VGS=0V
1.6
V
Source-Drain Current
ISD
2.5
A
Source-Drain Current (Pulsed)
ISDM
10
A
Reverse Recovery Current
IRRM
8.4
A
ISD=2.5A, di/dt=100A/μs,
Body Diode Reverse Recovery Time
tRR
384
ns
VDD=50V, TJ=25°C
1600
nC
Body Diode Reverse Recovery Charge
QRR
Note: 1.Pulse width=300μs, Duty cycle≦1.5%
Note: 2.COSS(EQ) is defined asa constant equivalent capacitance giving the same charging time as COSS when VDS
increases from 0to 80% VDSS.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-283.a
3N80
„
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
Same Type
as D.U.T.
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-283.a
3N80
„
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
10V
VDD
D.U.T.
ID(t)
VDS(t)
VDD
tp
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Fig. 4B Unclamped Inductive Switching Waveforms
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3N80
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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