UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 1.1Ω @VGS = 10 V * Ultra Low Gate Charge ( Typical 45nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 15pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 10N80L-T3P-T 10N80G-T3P-T 10N80L-TF1-T 10N80G-TF1-T 10N80L-TF2-T 10N80G-TF2-T www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package TO-3P TO-220F1 TO-220F2 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tube 1 of 6 QW-R502-218.F 10N80 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 800 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current (TC = 25°С) ID 10 A Pulsed Drain Current (Note 2) IDM 40 A Avalanche Current (Note 2) IAR 10 A 920 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 24 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.0 V/ns TO-3P 240 TO-220F1 Power Dissipation W 36 TO-220F2 37 PD TO-3P 1.92 TO-220F1 Linear Derating Factor above TC = 25°С °С/W 0.288 TO-220F2 0.296 Junction Temperature TJ 150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L=17.3mH, IAS=10A, VDD=50V, RG=25Ω, Starting TJ=25°C 4. ISD ≤ 10 A, di/dt ≤ 200A/μs, VDD ≤BVDSS, Starting TJ=25°C. THERMAL DATA PARAMETER TO-3P Junction to Ambient TO-220F1/ TO-220F2 TO-3P TO-220F1 Junction to Case TO-220F2 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 40 62.5 0.52 3.47 3.37 UNIT °С/W °С/W 2 of 6 QW-R502-218.F 10N80 Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL BVDSS TEST CONDITIONS VGS =0 V, ID =250 µA VDS =800V, VGS =0 V Drain-Source Leakage Current IDSS VDS =640V, TC =125°C Gate-Body Leakage Current IGSS VDS =0 V, VGS = ±30 V Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250µA, Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS =VGS, ID =250µA Static Drain-Source On-Resistance RDS(ON) VGS = 10V, ID = 5.0A DYNAMIC PARAMETERS Input Capacitance CISS VDS =25V, VGS =0V, Output Capacitance COSS f=1MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=400V, ID=10.0A, RG=25Ω (Note 1,2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Total Gate Charge QG VDS =640V, VGS =10V, Gate Source Charge QGS ID =10.0A (Note 1,2) Gate Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=10.0 A,VGS=0V Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS = 0V, dIF /dt = 100 A/µs, IS = 10.0A (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 2. Independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 800 V 10 100 ±100 980 3.0 0.9 5.0 1.1 2150 2800 180 230 15 20 50 130 90 80 45 13.5 17 110 270 190 170 58 µA nA V/°С V Ω pF pF pF ns nC 1.4 V 10.0 A 40.0 730 10.9 ns nC 3 of 6 QW-R502-218.F 10N80 Power MOSFET TEST CIRCUIT Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-218.F 10N80 Power MOSFET TEST CIRCUIT(Cont.) + D.U.T. VDS + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Forward Voltage Drop 5 of 6 QW-R502-218.F 10N80 Power MOSFET TYPICAL CHARACTERISTICS Drain-Source On-State Resistance Characteristics Drain Current vs. Source to Drain Voltage 5 10 4 Drain Current, ID (A) 8 Drain Current,ID (A) VGS=10V, ID=5A 6 4 3 2 1 2 0 0 0 200 400 600 800 0 1000 3 4 Drain Current vs. Gate Threshold Voltage Drain Current vs. Drain-Source Breakdown Voltage 5 400 Drain Current,ID (µA) 2.5 Drain Current,ID (mA) 2 Drain to Source Voltage, VDS (V) 3 2 1.5 1 0.5 0 1 Source to Drain Voltage,VSD (mV) 350 300 250 200 150 100 50 0 1 2 3 Gate Threshold Voltage,VTH (V) 4 0 0 200 400 600 800 1000 Drain-Source Breakdown Voltage,BVDSS(V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-218.F