UNISONIC TECHNOLOGIES CO., LTD 2N90 Preliminary Power MOSFET 2 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N90 is an N-channel mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 2N90 is universally applied in high efficiency switch mode power supply. FEATURES * 2.2A, 900V, RDS(on) = 7.2Ω @VGS = 10 V * Typically 5.5 pF low Crss * High switching speed * Typically 12 nC low gate charge * Improved dv/dt capability * 100% avalanche tested SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N90L-TF3-T 2N90G-TF3-T 2N90L-TN3-R 2N90G-TN3-R Note: Pin Assignment: G: Gate D: Drain Package TO-220F TO-252 1 G G Pin Assignment 2 3 D S D S Packing Tube Tape Reel S: Source www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-478.a 2N90 Preliminary ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current Pulsed (Note 1) Avalanche Current (Note 1) Single Pulsed (Note 2) Avalanche Energy Repetitive (Note 1) Peak Diode Recovery dv/dt (Note 3) TO-220F Power Dissipation TO-252 Junction Temperature Storage Temperature Range Power MOSFET SYMBOL VDSS VGSS ID IDM IAR EAS EAR dv/dt PD TJ TSTG RATINGS 900 ±30 2.2 8.8 2.2 170 8.5 4.0 25 43 +150 -55~+150 UNIT V V A A A mJ mJ V/ns W W/°C °C °C RATINGS 62.5 110 5 2.85 UNIT °C/W °C/W °C/W °C/W THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case PACKAGE TO-220F TO-252 TO-220F TO-252 SYMBOL θJA θJC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-478.a 2N90 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate- Source Leakage Current SYMBOL BVDSS ID=250µA, VGS=0V 900 IGSS UNISONIC TECHNOLOGIES CO., LTD V 1.0 VDS=900V, VGS=0V VDS=720V, TC=125°C VGS=+30V, VDS=0V VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=1.1A Forward Transconductance (Note 4) gFS VDS=50V, ID=1.1A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note 4,5) QG VGS=10V, VDS=720V, ID=2.2A Gate to Source Charge (Note 4,5) QGS Gate to Drain Charge (Note 4,5) QGD Turn-ON Delay Time (Note 4,5) tD(ON) Rise Time (Note 4,5) tR VDD=450V, ID=2.2A, RG=25Ω Turn-OFF Delay Time (Note 4,5) tD(OFF) Fall-Time (Note 4,5) tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD IS=2.2A, VGS=0V Reverse Recovery Time (Note 4) tRR IS=2.2A, VGS=0V, dIF/dt=100A/µs Reverse Recovery Charge (Note 4) QRR Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 65mH, IAS = 2.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 2.2A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature www.unisonic.com.tw MIN TYP MAX UNIT △BVDSS/△TJ Reference to 25°C, ID=250µA IDSS Forward Reverse TEST CONDITIONS V/°C 10 µA 100 +100 nA -100 nA 3.0 5.0 7.2 V Ω S 390 45 5.5 500 60 7.0 pF pF pF 12 2.8 6.1 15 35 20 30 15 40 80 50 70 nC nC nC ns ns ns ns 2.2 A 8.8 A 1.4 V ns µC 5.6 2.0 400 1.6 3 of 6 QW-R502-478.a 2N90 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-478.a 2N90 Preliminary Power MOSFET Gate Charge Test Circuit Gate Charge Waveforms VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Unclamped Inductive Switching Waveforms Unclamped Inductive Switching Test Circuit 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time 5 of 6 QW-R502-478.a 2N90 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-478.a