UNISONIC TECHNOLOGIES CO., LTD UTT30N10 Power MOSFET 30A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30N10 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and high switching speed. The UTC UTT30N10 is suitable for high voltage synchronous rectifier and DC/DC converters, etc. FEATURES * RDS(ON) < 52mΩ @ VGS=10V, ID=30A * High Switching Speed SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT30N10L-TA3-T UTT30N10G-TA3-T UTT30N10L-TF3-T UTT30N10G-TF3-T UTT30N10L-TN3-R UTT30N10G-TN3-R UTT30N10L-TQ2-T UTT30N10G-TQ2-T UTT30N10L-TQ2-R UTT30N10G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-252 TO-263 TO-263 Pin Assignment 1 2 3 G D S G C E G D S G D S G D S Packing Tube Tube Tape Reel Tube Tape Reel MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-661.F UTT30N10 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Continuous ID 30 A (VGS=10V) TC=25°C Drain Current Pulsed IDM 120 A Single Pulsed Avalanche Energy (Note 2) EAS 55 mJ TO-220/TO-263 79 Power Dissipation TO-220F PD 47 W TO-252 44 Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Starting TJ = 25°C, L = 0.27mH, IAS = 30A. 3. Pulse Width = 100s THERMAL DATA PARAMETER TO-220/TO-220F TO-263 Junction to Ambient TO-252 TO-220/TO-263 Junction to Case TO-220F TO-252 SYMBOL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATINGS 62 110 1.58 2.64 2.85 UNIT °C/W °C/W 2 of 6 QW-R502-661.F UTT30N10 Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate- Source Leakage Current Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) TEST CONDITIONS ID=250µA, VGS=0V VDS=100V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V 100 VDS=VGS, ID=250µA VGS=10V, ID=30A VGS=6V, ID=15A 1 DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Time tON Turn-ON Delay Time tD(ON) VDD=30V, ID=0.5A, VGS=10V, RGS=25Ω Rise Time tR Turn-OFF Delay Time tD(OFF) Total Gate Charge at 10V QG VGS=10V, VDS=25V, ID=1.3A, Gate to Source Charge QGS IG=100µA Gate to Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM ISD=30A Drain-Source Diode Forward Voltage VSD ISD=15A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 39.5 39.2 1 +100 -100 V µA nA nA 3 52 72 V mΩ mΩ 2590 144 105 pF pF pF 48 68 780 126 75 9 16 ns ns ns ns nC nC nC 30 120 1.25 1.0 A A V V 3 of 6 QW-R502-661.F UTT30N10 Power MOSFET TEST CIRCUITS AND WAVEFORMS VGS Same Type as DUT 12V QG 10V 200nF 50kΩ QGS VDS 300nF QGD VGS DUT 3mA Charge Gate Charge Test Circuit Gate Charge Waveforms Resistive Switching Test Circuit Resistive Switching Waveforms 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 4 of 6 QW-R502-661.F UTT30N10 Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver ) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-661.F UTT30N10 Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (µA) Drain Current, ID (µA) Drain-Source On-State Resistance Characteristics Drain Current, ID (A) 30 Body-Diode Continuous Current, ID (A) 35 VGS=10V, ID=30A 25 20 15 VGS=6V, ID=15A 10 5 0 0 0.5 1.0 1.5 2.0 2.5 Drain to Source Voltage, VDS (V) 35 Body-Diode Continuous Current vs. Source to Drain Voltage 30 25 20 15 10 5 0 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-661.F