UNISONIC TECHNOLOGIES CO., LTD PZT4033

UNISONIC TECHNOLOGIES CO., LTD
PZT4033
PNP SILICON TRANSISTOR
PNP SILICON TRANSISTOR

DESCRIPTION
The UTC PZT4033 designed for high current general purpose
amplifier applications.


ORDERING INFORMATION
Ordering Number
Package
PZT4033G-AA3-R
SOT-223
Pin Assignment
1
2
3
B
C
E
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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PZT4033

PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Power Dissipation
Collector Current
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
PD
IC
TJ
TSTG
RATING
-80
-80
-5
2
-1
-65 ~ +150
-65 ~ +150
UNIT
V
V
V
W
A
°C
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER
Junction to Ambient

SYMBOL
θJA
RATING
62.5
UNIT
°C /W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BVCBO IC=-10A,IE=0
Collector-Emitter Breakdown Voltage
BVCEO IC=-10mA,IB=0
Emitter-Base Breakdown Voltage
BVEBO IE=-10A,IC=0
Collector Cut-off Current
ICBO
VCB=-60V, IE=0
Emitter Cut-off Current
IEBO
VEB=-5V, IC=0
VCE=-5V, IC=-0.1mA
VCE=-5V, IC=-100mA
DC Current Gain
hFE
VCE=-5V, IC=-500mA
VCE=-5V, IC=-1A
IC=-150mA, IB=-15mA
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=-500mA, IB=-50mA
IC=-150mA, IB=-15mA
Base-Emitter Saturation Voltage
VBE(SAT)
IC=-500mA, IB=-50mA
Gain Bandwidth Product
f
VCE= -10V, IC= -50mA, f=1MHz
Output Capacitance
COB
VCB=-10V, IE=0, f=1MHz
Input Capacitance
CIB
VEB=-0.5V, IC=0, f=1MHz
Switching Time
Turn-on Time
Storage Time
Fall Time
tON
tSTG
tF
IC=-500mA, VCE= -30V,
IB1=- IB2=-50mA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
-80
-80
-5
TYP
MAX
-50
-10
75
100
70
25
UNIT
V
V
V
nA
nA
300
-0.15
-0.5
-0.9
-1.1
100
20
110
100
350
50
V
V
MHz
pF
pF
ns
ns
ns
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TYPICAL CHARACTERISTICS
Typical Pulsed Current Gain
vs Collector Current
300
Collector-emitter Saturation Voltage
vs Collector Current
β=10
0.6
250
200
TA =125°C
150
100
TA =25°C
50
1000
TA = -40°C
0
0.1
1
0.3
3
10
30
100
VCE (sat) -Collector-to-Emitter
Saturation Voltage(V)
hFE -Typical Pulsed Current Gain
VCE=5V
300
TA =25°C
0.4
TA =-40°C
0.2
TA =125°C
100
10
Base-emitter Saturation Voltage
vs Collector Current
1.2
VBE (ON) Base to-Emitter ON Voltage(V)
VBE (sat) -Base-to-Emitter Voltage(V)
1
TA =-40°C
0.8
0.6
TA =125°C
0.4
100
10
Base-emitter ON Voltage
vs Collector Current
1.0
β=10
TA =25°C
VCE=5V
0.8
TA =-40°C
0.6
TA =25°C
0.4
TA =125°C
0.2
0.1
1000
1
Ic -Collector Current(mA)
10
50
Ic -Collector Current(mA)
Collector Cut off Current
vs Ambient Temperature
100
1000
Ic -Collector Current(mA)
Ic -Collector Current (mA)
500
VCB=5V
Collector-Base and Emitter-Base
Capacitance vs Reverse Bias Voltage
f =1.0MHz
200
10
Capacitance (pF)
ICBO -Collector Current (nA)

PNP SILICON TRANSISTOR
1
0.1
100
CIBO
50
20
COBO
10
25
50
75
100
125
150
TA-Ambient Temperature (°C)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6
-0.1
-1
-10
-50
Reverse Bias Voltage ( V)
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PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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