Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2SA1740
PNP SILICON TRANSISTOR
HIGH VOLTAGE DRIVER
APPLICATION

FEATURES
*High breakdown voltage.
*Excellent hFE linearity.

ORDERING INFORMATION
Ordering Number
2SA1740G-x-AB3-R
Note: Pin Assignment: B: Base C: Collector

Package
SOT-89
Pin Assignment
1
2
3
B
C
E
Packing
Tape Reel
E: Emitter
MARKING
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Copyright © 2014 Unisonic Technologies Co., Ltd
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2SA1740

PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-400
V
Collector-Emitter Voltage
VCEO
-400
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-200
mA
Collector Current (PULSE)
ICP
-400
mA
Collector Power Dissipation
PC
0.5
W
°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collect-Base Breakdown Voltage
Collect-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collect-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Reverse Transfer Capacitance
Gain-Bandwidth Product
Turn-On Time
Turn-Off Time

SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(SAT)
VBE(SAT)
COB
CRE
fT
tON
tOFF
TEST CONDITIONS
IC= -10A,IE=0
IC= -1mA,IB=0, RBE=
IE= -10A,IC=0
VCB= -300V,IE=0
VEB= -4V,IC=0
VCE= -10V, Ic= -50mA
IC= -50mA,IB= -5mA
IC= -50mA,IB= -5mA
VCB=-30V, f=1MHz
VCB =-30V,f=1MHz
VCE= -30V,IC= -10mA
See test circuit
See test circuit
MIN
-400
-400
-5
TYP
MAX
-0.1
-0.1
200
60
-0.8
-1.0
5
4
70
0.25
5.0
UNIT
V
V
V
A
A
V
V
pF
pF
MHz
s
s
CLASSIFICATION OF hFE
RANK
RANGE
D
60-120
UNISONIC TECHNOLOGIES CO., LTD
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E
100-200
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PNP SILICON TRANSISTOR
TEST CIRCUIT
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
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector Current vs. Base to Emitter Voltage
-120
DC Current Gain vs.Collector Current
5
VCE=-10V
-100
3
2
-80
100
-60
7
5
VCE=-10V
TA=70°C
TA=25°C
TA= -30°C
TA=25°C
3
2
-40
TA=70°C
-20
0
10
TA= -30°C
0
-0.2
-0.4
-0.6
-0.8
7
5
7-1.0 2 3
-1.0 -1.2 -1.4
Base to Emitter Voltage, VBE(V)
1.0
7
5
3
2
7
Icp
5
1ms
3
Ic
2
10ms
100
7
5
3
100ms
2
DC Operation
10
7
5
3
2 *Single pulse TA=25°C
Mounted on ceramic board
1
(250mm2 × 0.8mm)
7
5
2 3 5 7 100 2 3 5
3 5 7 10
tstg
tf
ton
0.1
VCC=-150V
7 -10IB1=10IB2=IC
5
3
5 7 10
2 3
5 7 100
2 3
5 7-100 2 3
Collector Current vs.Collector to Emitter Voltage
Switch Time vs.Collector Current
10
7
5
3
2
5 7 -10 2 3
Collector Current,IC(mA)
5
Collector Current,IC( mA)
Collector Dissipation vs.Ambient Temperature
Collector to Emitter Voltage,VCE(V)
Collector to Emitter Saturation Voltage vs.Collector Current
1.4
5
1.6
3
2
1.2
Ic/IB=10
-1.0
1.0
7
5
0.8
0.6
3
2
0.4
0.2 Mounted on ceramic board
(250mm2 × 0.8mm)
0
0 20 40 60 80 100 120 140 160
Ambient Temperature ,TA (°C)
UNISONIC TECHNOLOGIES CO., LTD
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-0.1
7
5
7-1.0
TA=70°C
TA=-30°C TA=25°C
2 3
5 7 -10
2 3
5 7-100 2
Collector Current,IC( mA)
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PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Base to Emitter Saturation vs.Collector Current
7
Ic/IB=10
5
3
2
-1.0
TA= -30°C
7
5
3
TA=70°C
7-1.0 2 3
5 7 -10 2 3
TA=25°C
5 7-100 2 3
Collector Current,Ic (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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