UNISONIC TECHNOLOGIES CO., LTD TF218

UNISONIC TECHNOLOGIES CO., LTD
TF218
JFET
N-CHANNEL JUNCTION FIELD
EFFECT TRANSISTOR

DESCRIPTION
The UTC TF218 is an N-channel junction field effect transistor,
and it can be specially used in electronic condenser microphone
specially.

FEATURES
* Good voltage characteristics and transient characteristics.

ORDERING INFORMATION
Ordering Number
TF218G-x-AN3-R
TF218G-x-AQ3-R
Note: Pin Assignment: S: Source
D: Drain

Package
SOT-523
SOT-723
Pin Assignment
1
2
3
S
D
G
S
D
G
Packing
Tape Reel
Tape Reel
G: Gate
MARKING
TF218-E3
TF218-E4
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Copyright © 2014 Unisonic Technologies Co., Ltd
TF218-E5
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TF218

JFET
ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Gate to Drain Voltage
VGDO
-20
V
Gate Current
IG
10
mA
Drain Current
ID
1
mA
Power Dissipation
PD
100
mW
Junction Temperature
TJ
150
°С
Storage Temperature
TSTG
-55~+150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)
PARAMETER
G-D Breakdown Voltage
Gate Off Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Voltage Gain
Reduced Voltage Characteristic
Frequency Characteristic
Input Resistance
Output Resistance
Total Harmonic Distortion
Output Noise Voltage

SYMBOL
BVGDO
VGS(OFF)
IDSS
|YFS|
CISS
CRSS
GV
△GVV
△GVf
ZIN
ZO
THD
VNO
TEST CONDITIONS
IG=-100uA
VDS=5.0V, ID=1uA
VDS=2.0V, VGS=0
VDS=2.0V, VGS=0, f=1KHz
VDS=5.0V, VGS=0, f=1MHz
VDS=5.0V, VGS=0, f=1MHz
VIN=10mV, f=1KHz
VIN=10mV, f=1KHz VCC=4.51.5V
f=1KHz~110Hz
f=1KHz
f=1KHz
VIN=30mV, f=1KHz
VIN=0, A Curve
MIN
-20
-0.2
100
0.65
25
TYP MAX UNIT
V
-0.6 -1.0
V
350
μA
1.0
ms
3.5
pF
0.65
pF
-3.0
dB
-1.2 -3.5
dB
-1.0
dB
MΩ
1000
Ω
1.2
%
-110 dB
CLASSIFICATION OF IDSS
RANK
RANGE
E3
100-170
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
E4
140-240
E5
210-350
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TF218

JFET
TEST CIRCUIT (TA=25°С, unless otherwise specified)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TF218
JFET
Drain Current, ID (µA)
Source Current, -IS (µA)
TYPICAL CHARACTERISTICS

Gate-Source Voltage
280
120
240
Drain Current, ID (µA)
Drain Current, ID (µA)
Gate-Drain Voltage
140
100
80
60
40
20
0
200
160
120
80
40
0
10
20
30
40
50
Gate-Drain Voltage, -VGDO (V)
0
0
0.2
0.4
0.6
0.8
1.0
Gate-Source Voltage, -VGS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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