UNISONIC TECHNOLOGIES CO., LTD 2SK508

UNISONIC TECHNOLOGIES CO., LTD
2SK508
N-CHANNEL JFET
HIGH FREQUENCY AMPLIFIER
N-CHANNEL SILICON
JUNCTION FIELD EFFECT
TRANSISTOR

3
2
DESCRIPTION
SOT-23
The UTC 2SK508 is NPN transistor with High forward transfer
admittance and low input capacitance.
It is suitable for cordless telephone, AM tuner and wireless
installation, etc.

1
(JEDEC TO-236)
FEATURES
* High forward transfer admittance
* Low input capacitance

ORDERING INFORMATION
Ordering Number
2SK508G-x-AE3-R
Note: Pin Assignment: D: Drain
S: Source

Package
SOT-23
Pin Assignment
1
2
3
D
S
G
Packing
Tape Reel
G: Gate
MARKING
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Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R206-101.C
2SK508

N-CHANNEL JFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Gate to Drain Voltage
VGDO
-15
V
Gate to Source Voltage
VGSO
-15
V
Drain to Source Voltage (VGS=-4.0 V)
VDSX
15
V
Drain Current (DC)
ID
50
mA
Gate Current (DC)
IG
5
mA
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
Gate Cut-Off Current
Zero Gate Voltage Drain Current (Note)
Gate to Source Cut-Off Voltage
Forward Transfer Admittance (Note)
Input Capacitance
Feedback Capacitance
Note: Pulsed: PW≤1ms, Duty Cycle≤1%.

SYMBOL
IGSS
IDSS
VGS(off)
|yFS|1
|yFS|2
CISS
CRSS
TEST CONDITIONS
VGS=-10V, VDS=0V
VDS=5.0V, VGS=0V
VDS=5.0V, ID=10μA
VDS=5.0V, ID=10mA, f=1.0kHz
VDS=5.0V, VGS=0V, f=1.0kHz
VDS=5.0V, ID=10mA, f=1.0MHz
VDS=5.0V, ID=10mA, f=1.0MHz
MIN
10
-0.6
14
14
TYP MAX UNIT
-1.0 nA
20
50
mA
-1.4 -3.5
V
19
mS
26
mS
4.8
pF
1.6
pF
IDSS CLASSIFICATION
MARKING
IDSS (mA)
K51
10 ~ 20
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
K52
15 ~ 30
K53
25 ~ 50
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QW-R206-101.C
2SK508
N-CHANNEL JFET
TYPICAL CHARACTERISTICS

Drain Current vs. Gate-Source Voltage
Drain Current vs. Drain-Source Voltage
14
VGS=-4V
Drain Current, ID (mA)
Drain Current, ID (uA)
10
8
6
4
2
0
VGS=0V
35
12
VGS=-0.2V
30
VGS=-0.4V
25
VGS=-0.6V
20
VGS=-0.8V
15
VGS=-1.0V
10
5
0
5
10
15
20
25
Gate-Source Voltage, VDSX (V)
30
0
0
5
10
15
Drain-Source Voltage, VDS (V)
20
Power Dissipation vs. Ambient Temperature
Power Dissipation, PD (mW)
300
250
200
150
100
50
0
0
25
50
75
100
125
150
175
Ambient Temperature, TA (°C)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-101.C