UNISONIC TECHNOLOGIES CO., LTD BSS84Z Preliminary Power MOSFET 0.13A, 50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION These P-Channel enhancement mode field vertical D-MOS transistors are in a SOT-23-3 SMD package, and in most applications they require up to 0.13A DC and can deliver current up to 0.52A. This product is particularly suited to low voltage applications requiring a low current high side switch. FEATURES * RDS(ON)=10Ω @ VGS=-5V SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free BSS84ZL-AE2-R BSS84ZG-AE2-R Note: Pin Assignment: G: Gate D: Drain S: Source Package SOT-23-3 Pin Assignment 1 2 3 S G D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-719.b BSS84Z Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT -50 V ±20 V DC -0.13 Continuous Drain Current ID A Pulse -0.52 Power Dissipation PD 0.36 W Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient SYMBOL VDSS VGSS SYMBOL θJA RATINGS 350 UNIT ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate–Body Leakage, Forward ON CHARACTERISTICS (Note) Gate-Threshold Voltage Static Drain–Source On–Resistance SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS=0V, ID=-250µA VDS=-50V, VGS=0V VDS=0V, VGS=±20V -50 VGS(TH) VDS=VGS, ID=-1m A VGS=-5V, ID=-0.1A VGS=-55 V, ID=-0.1A, TJ=125℃ VGS=-10 V, VDS=-5V VDS=-25V, ID=-0.1A -0.8 -1.7 1.2 1.9 -0.6 0.05 0.6 RDS(ON) On-State Drain Current ID(ON) Forward Transconductance gFS DYNAMIC PARAMETERS Input Capacitance CISS VDS=-25V, VGS=0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS (Note) Total Gate Charge QG VDS=-30V, VGS=-10V, Gate Source Charge QGS ID=-0.1A Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=-30V, ID=-0.1A,VGS=-10V, RG=6Ω, Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS= 0V, IS=-0.26A (Note) Max. Diode Forward Current IS Note: Pulse test, pulse width ≤ 300us, duty cycle≤ 2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -15 ±10 -2 10 17 V Ω A S 73 10 5 0.9 0.2 0.3 2.5 6.3 10 4.8 V µA µA pF pF pF 1.3 5 13 20 9.6 -0.8 -1.2 -0.13 nC nC nC ns ns ns ns V A 2 of 3 QW-R502-719.b BSS84Z Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-719.b