UNISONIC TECHNOLOGIES CO., LTD UT3418 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) < 60mΩ @VGS = 10 V * RDS(ON) < 70mΩ @VGS = 4.5 V * RDS(ON) < 155mΩ @VGS = 2.5 V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Note: UT3418G-AE3-R Pin Assignment: G: Gate D: Drain Package SOT-23 Pin Assignment 1 2 3 S G D Packing Tape Reel S: Source MARKING www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-226.E UT3418 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNITS Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current ID 3.8 A Pulsed Drain Current (Note 2) IDM 15 A Power Dissipation PD 1.4 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) THERMAL DATA PARAMETER Junction to Ambient SYMBOL θJA MIN TYP 100 MAX 125 UNIT °C/W ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate-Threshold Voltage SYMBOL Drain-Source On-State Resistance RDS(ON) TEST CONDITIONS BVDSS IDSS IGSS ID=250μA, VGS=0V VDS=24V, VGS=0V VGS=±12V, VDS=0V 30 VGS(TH) VDS=VGS, ID=250µA VGS=10V, ID=3.8A VGS=4.5V, ID=3.5A VGS=2.5V, ID=1A VDS=5V, VGS=4.5V 1 On-State Drain Current ID(ON) DYNAMIC PARAMETERS Input Capacitance CISS VDS=15V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDS=15V,RL =3.9Ω, VGS =10V, RG=6Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Total Gate Charge QG VDS=15V, VGS=4.5V, Gate Source Charge QGS ID=3.8A Gate Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=1A, VGS=0V Maximum Body-Diode Continuous Current IS Body Diode Reverse Recovery Time tRR IF=3.8A, dI/dt=100A/μs Body Diode Reverse Recovery Charge QRR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 0.001 1 100 V µA nA 1.4 43 52 101 1.8 60 70 155 V mΩ mΩ mΩ A 226 39 29 270 pF pF pF 2.6 3.2 14.5 2.1 3 1.4 0.55 4 5 22 3 3.6 ns ns ns ns nC nC nC 0.81 1 2.5 13 5 V A ns nC 15 10.2 3.8 2 of 3 QW-R502-226.E UT3418 Power MOSFET TYPICAL CHARACTERISTICS 300 Drain Current vs. Drain-Source Breakdown Voltage 300 250 250 200 200 150 150 100 100 50 50 0 0 0 10 20 30 40 50 Drain-Source Breakdown Voltage, BVDSS(V) 5 Drain-Source On-State Resistance Characteristics Drain Current vs. Gate Threshold Voltage 0 0.2 0.8 1.0 1.2 0.4 0.6 Gate Threshold Voltage, VTH (V) Drain Current vs. Source to Drain Voltage 1.2 1.0 4 VGS=10V 0.8 3 VGS=4.5V 0.6 2 0.4 1 0.2 VGS=2.5V 0 0 0 50 100 150 200 Drain to Source Voltage, VDS (mV) 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-226.E