UNISONIC TECHNOLOGIES CO., LTD UDN302 Power MOSFET P-CHANNEL 2.5V SPECIFIED POWERTRENCH MOSFET DESCRIPTION The UDN302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=55mΩ @ VGS=-4.5V * RDS(ON)=80mΩ @ VGS=-2.5V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UDN302L-AE3-R UDN302G-AE3-R Package SOT-23 Pin Assignment 1 2 3 S G D Packing Tape Reel MARKING NC03 L: Lead Free G: Halogen Free www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-278.B UDN302 Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current ID -2.4 A Pulsed Drain Current IDM -10 A Maximum Power Dissipation PD 0.5 W ℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL θJA θJC Junction-to-Ambient Junction-to-Case MIN TYP MAX 250 75 UNIT ℃/W ℃/W ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS(Note) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS (Note) Total Gate Charge SYMBOL BVDSS ΔBVDSS/ΔTJ IDSS IGSS TEST CONDITIONS VGS=0V, ID=-250µA ID=-250µA, Referenced to 25°C VDS=-16V, VGS=0V VGS=±12V, VDS=0V VGS(TH) VDS =VGS, ID =-250µA ID=-250 µA, ΔVGS(TH)/ΔTJ Referenced to 25°C VGS=-4.5V, ID=-2.4A RDS(ON) VGS=-2.5V, ID=-2A ID(ON) VGS=-4.5V, VDS=-5V gFS VDS=-5V, ID=-2.4A CISS COSS CRSS QG VDS=-10V, VGS=0V, f=1.0MHz VDS=-10V, ID=-2.4A, VGS=-4.5V Gate Source Charge QGS Gate Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=-10V, ID=-1A, VGS=-4.5V Turn-ON Rise Time tR RG=6Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD VGS=0V, IS=-0.42A (Note) Maximum Body-Diode Continuous Current IS Note: Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -20 V -12 -0.6 -1.0 mV/°C -1 ±100 µA nA -1.5 V 3 44 64 mV/°C 55 80 -10 mΩ 10 A S 882 211 112 pF pF pF 9 2 3 13 11 25 15 14 nC 23 20 40 27 nC nC ns ns ns ns -0.7 -1.2 -0.42 V A 2 of 4 QW-R502-278.B UDN302 Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Gate Threshold Voltage 450 300 400 250 350 300 200 250 150 200 100 150 100 50 0 Drain Current vs. Drain-Source Breakdown Voltage 50 0 0.2 0.8 0.4 0.6 Gate Threshold Voltage, VTH (V) 1.0 0 0 10 20 30 40 Drain-Source Breakdown Voltage, BVDSS(V) Drain-Source On-State Resistance Characteristics 3.0 ID=-2.4A VGS=-4.5V 2.5 2.0 ID=-2A VGS=-2.5V 1.5 1.0 0.5 0 0 50 100 150 200 Drain to Source Voltage, VDS (mV) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R502-278.B UDN302 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-278.B