UNISONIC TECHNOLOGIES CO., LTD UT4812Z Power MOSFET 30V, 6.9A DUAL N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT4812Z can provide excellent RDS(ON) and low gate charge by using advanced trench technology. The UTC UT4812Z is suitable for using as a load switch or in PWM applications. FEATURES * Low RDS(ON) * Reliable and Rugged * Halogen Free SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT4812ZL-S08-R UT4812ZG-S08-R UT4812ZL-S08-T UT4812ZG-S08-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package Packing SOP-8 SOP-8 Tube Tape Reel 1 of 6 QW-R502-350.B UT4812Z Power MOSFET PIN CONFIGURATION UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R502-350.B UT4812Z Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 2) ID 6.9 A Pulsed Drain Current (Note 3) IDM 30 A Power Dissipation PD 2 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ + 150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Surface Mounted on 1in 2 pad area, t ≤10sec 3. Pulse width limited by TJ(MAX) THERMAL DATA PARAMETER Junction to Ambient SYMBOL θJA RATINGS 110 UNIT °C /W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance (Note) SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS =0 V, ID =250µA VDS =30V, VGS =0 V VDS =0 V, VGS = ±20V 30 VGS(TH) VDS =VGS, ID =250 µA VGS =10V, ID =6.9A VGS =4.5V, ID =5.0A 1 RDS(ON) DYNAMIC PARAMETERS Input Capacitance CISS VDS =15 V, VGS =0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VGS=10V, VDS=15V, RL=2.2Ω, RGEN =3Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Total Gate Charge QG Gate Source Charge QGS VDS =15V, VGS =10V, ID =6.9A Gate Drain Charge QGD SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=1A (Note) Maximum Continuous Drain-Source IS Diode Forward Current Body Diode Reverse Recovery Time trr IF=6.9 A, dI/dt=100A/μs Body Diode Reverse Recovery Charge QRR IF=6.9 A, dI/dt=100A/μs Note: Pulse width ≤300μs, duty cycle≤2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1 5 V µA µA 1.9 22.5 34.5 3 28 42 V mΩ mΩ 680 102 77 820 pF pF pF 4.6 4.1 20.6 5.2 13.84 1.82 3.2 7 6.2 30 7.5 17 ns ns ns ns nC nC nC 0.76 1 V 3 A 20 10 ns nC 16.5 7.8 108 3 of 4 QW-R502-350.B UT4812Z Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage 300 Drain Current vs. Gate Threshold Voltage 300 250 Drain Current, ID (µA) Drain Current, ID (µA) 250 200 150 100 200 150 100 50 50 0 0 0 5 10 15 20 25 30 35 40 Drain-Source Breakdown Voltage, BVDSS(V) Drain-Source On-State Resistance Characteristics 8 7 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Gate Threshold Voltage, VTH (V) Drain Current vs. Source to Drain Voltage 1.2 1.0 VGS=10V ID=6.9A 6 0 0.8 5 0.6 4 VGS=4.5V ID=5A 3 0.4 2 0.2 1 0 0 0 50 100 150 200 Drain to Source Voltage, VDS (mV) 0 0.4 0.6 0.8 1.0 1.2 0.2 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-350.B