WS2285 Product Description Current Mode PWM Controller Features that is, at the condition of no load or light load, WS2285 can � Burst Mode Control reduce the switch frequency linearly which minimize the � 5uA ultra-low startup current switching power loss; the ultra-low startup current and � 1.8mA Low operating current operating current make a reliable power for startup design, � Built-in Leading-edge blanking and also large resistor can be used in the startup circuit to � Built-in synchronous slope compensation circuit improve switching efficiency. The internal synchronous slope � Built-in Soft-Start compensation circuit reduces the possible sub harmonic � 65kHz fixed switch frequency oscillation at high PWM duty cycle output. � Cycle by cycle over current protection (OCP) Leading-edge blanking on current sense(CS) input removes � VDD over voltage clamp & under voltage the signal glitch due to snubber diode circuit reverse lockout( UVLO) recovery and thus greatly reduces the external component � Over load protection (OLP) count and system cost in the design. � OVP shut down latch WS2285 offers comprehensive protection coverage with � Maximum Gate output voltage clamped at 12V automatic self-recovery feature, including cycle by cycle over � Frequency jittering current protection (OCP), over load protection (OLP), VCC � Ultra low standby power (<100mW) Clamp, under voltage lockout (UVLO), OTP and OVP shut down latch. The gate-driven output is clamped to maximum 12V to protect the internal MOSFET. Applications Excellent EMI performance is achieved by using the Universal switch power supply equipment and offline soft-switching AC/DC flyback power converter totem-pole-gate-drive output. The tone energy at below � Power Adapter 20KHZ is minimized in the design and audio noise is � Set-Top Box Power Supplies eliminated during operation. The WS2285 is the ideal � Open-frame SMPS substitute of the linear power supply or the RCC-mod e � Battery Charger power, for a better performance of the whole switch power and frequency jittering at the system and a lower cost. General Description WS2285 is available in DIP8 package. WS2285 is a high performance current mode PWM controller, optimized for low power switch equipment. For lower the standby power and higher RoHS compliant, the IC offers a Burst Mode control feature and ultra-low start-up current and operating current, W/T-D017-Rev.A/2 May.2014 WINSEM I M ICROELECTRONICS WINSEM I M ICROELECTRONICS Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WINSEM I M ICROELECTRONICS WINSEM I M ICROELECTRONICS WINSEM I M ICROELECTRONICS 0612 WS2285 Product Description Typical Application Circuit V+ L EM I Filter N V- 1 2 3 4 N C GND VDD GND FB D R A IN CS D R A IN 8 7 6 5 Output Power Table 230VAC±15% 85-265VAC Adapter1 Adapter1 12W 8W Product WS2285 Note Note: Maximum practical continuous power in an Adapter design with sufficient drain pattern as a heat sink, at 50℃ ambient. Pin Definition and Device Marking WS2285 is available in DIP8 package: NC VDD 1 8 2 7 3 FB CS D IP 8 4 6 GND D: DIP8 GND A:wafer information; WS2285D8P A1a 2C D ra in 5 P: no Pb 1:Ver.; a: Package Code 2C:Y+M(2=2012 C=12 Month D ra in (1,2…A=10,B=11,C=12) Pin Function Description Pin Pin Name Number NC 1 NC VDD 2 Power 3 Feedback Input FB CS WIN SEM I Pin Type 4 M ICROELECTRON ICS www.winsemi.com Function Description Floating pin Power supply Feedback input pin. The PWM duty cycle is determined by voltage level into this pin and the current-sense signal at Pin 4. The internal protection circuit will automatically shutdown when the FB voltage level exceeds a preset threshold voltage. Current sense input. Current WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 2/10 WS2285 Product Description DRIAN Monitoring Power transistor drain 5/6 GND 7/8 This pin connects directly to the primary lead of the transformer and is capable of switching a maximum of 600V Ground GND Block Diagram GND OSC VDD Clamper Driver Output Soft switch Control Trigger and L o g ic Soft start OCP Comp VDD D R A IN PWM Comparator CS LEB Slope Comp UVLO Vo lta g e Divider OLP Internal su p p ly FB Burst Mode Ordering Information Package IC Marking Information 8-DIP8, Pb-free Purchasing Device Name WS2285D8P WS2285D8P Recommended Operating Condition Symbol Parameter Value Unit VCC VCC supply voltage 10~30 V TA Operating temperature -20~85 ℃ Absolute Maximum Ratings Symbol Parameter Value Unit Drain voltage(off-state) Drain Input Voltage -0.3~600 V VDD DC supply voltage 30 V VFB FB input voltage -0.3~7 V VCS CS input voltage -0.3~7 V TJ Operating junction temperature -20~150 ℃ TSTG Storage temperature -40~150 ℃ WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 3/10 WS2285 Product Description VCV VDD clamp voltage 32 V ICC VDD DC clamp current 10 mA Note Note: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, functional operation of the device at these or any other conditions beyond those indicated in the Recommended Operating Conditions section are not implied. Exposure to absolute maximum-rated conditions for extended periods may affect device reliability. ESD Information Symbol Parameter Value Unit VESD_HBM Human model 3000 V VESD_MM Machine model 300 V Electrical Characteristics (VDD=16V,TA=25℃if not otherwise noted) Supply Voltage (VCC) symbol parameter Test condition Min VCC_OP Operation voltage UVLO_ON Turn on threshold Voltage 6.5 UVLO_OFF Turn-off threshold Voltage 12.5 I_VCC_ST Start up current VCC=13V I_VCC_OP Operation Current VFB=3V Vpull_up Pull-up PMOS active VDD_Clamp VDD Zener Clamp Voltage IVDD=10mA 30 OVP(ON) Over voltage voltage CS=0.3V,FB=3V, Ramp up VCC until gate clock is off 26 Vlatch_release Latch release voltage Typ Max Unit 30 V 7.5 8.5 V 13.5 14.5 V 5 20 uA 3.0 mA 32 34 V 28 30 V 0 13 protection 5 V Feedback Input Section VFB_Open VFB Open Loop Voltage Avcs PWM input gain ΔVfb/ΔVcs Vref_green Vref_burst_H Vref_burst_L 3.9 The threshold enter green mode The threshold exit burst mode The threshold enter burst mode IFB_Short FB Pin Short Current FB Shorted to GND VTH_PL Power limiting FB Threshold TD_PL Power limiting Debounce ZFB_IN Input Impedance Max_Duty Maximum duty cycle 5.0 V 2 V/V 2.1 V 1.3 V 1.2 V 0.32 0.48 mA 3.7 80 88 V 96 16 75 80 ms KΩ 85 % Current CS Section SST Soft Start time 4 ms TLEB Leading edge Blanking Time 220 ns ZCS Input impedance 40 KΩ TD_OC OCP control delay 120 ns WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 4/10 WS2285 Product Description VTH_OC OCP threshold FB=3V Vocp_clamping 0.75 V 0.9 V Oscillator Section Fosc Fosc_BM Normal Oscillation VCC=14V,FB=3V, Frequency CS=0.3V 57 Burst mode frequency Frequency variation versus ∆f_temp temp. Deviation Frequency variation ∆f_VDD versus VDD 65 71 khz 22 khz TEMP = -20 to 85℃ 1 % VDD = 12 to 25V 1 % F_shuffling Shuffling Frequency 32 Hz ∆f_OSC Frequency Jittering ±4 % MOSFET Section MOSFET Drain-Source BVdss 600 breakdown voltage V Static Drain to Source on Ron 8.5 resistance WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I Ω M ICROELECTRON ICS 5/10 WS2285 Product Description Typical Operating Characteristics 。 Vth_otp(V)vs Temperatur( C) 5 .0 1.02 4 .5 1.01 V t h_ ot p(V ) Istartup(uA) Istartup(uA) vs Temperature ( 。 C ) 4 .0 3 .5 1.00 0.99 3 .0 0.98 -4 0 0 40 80 120 -40 。 Temperature ( C ) 120 1 3 .8 0 UVLO(OFF)(V) UVLO(ON)(V) 80 UVLO(OFF)(V) vs Temperature( 。 C ) 8 .5 0 8 .3 0 8 .1 0 7 .9 0 1 3 .6 0 1 3 .4 0 1 3 .2 0 1 3 .0 0 7 .7 0 -4 0 0 40 80 120 -4 0 0 40 80 120 。 Temperature( C ) 。 Temperature( C ) 。 Fose(KHz)vs Temperature( C ) V th _ O C ( V ) v s d u ty ( % ) 0 .9 5 6 4 .0 0 .9 0 6 3 .8 Fo s e(K H z ) Vth_OC(V) 40 。 Temperatur( C) UVLO(ON)(V)vs Temperature(。C ) 0 .8 5 0 .8 0 6 3 .5 6 3 .3 6 3 .0 0 .7 5 0 14 28 42 56 70 -4 0 D u ty ( % ) WIN SEM I 0 M ICROELECTRON ICS www.winsemi.com WIN SEM I 40 80 120 。 Temperature( C ) M ICROELECTRON ICS Tel : +86-755-8250 6288 0 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 6/10 WS2285 Product Description Function Description For the burst mode control circuit, WS2285 self adjusts the WS2285 is a high performance current mode PWM switching mode according to the loading condition. At the controller, optimized for low power AC/DC application. Ultra condition of no load or light/medium load, the FB input low startup current and operating current together with burst voltage drops below burst mode threshold level. Device mode feature minimize the standby power consumption and enters Burst Mode control on the basis of the judgment. The improve the switching efficiency. In addition to reduce the gate drive output switches only when VCC voltage drops external component count, the internal synchronous slope below a preset level and FB input is active. Otherwise the compensation combines with the leading-edge blanking gate drive remains at off to minimize the switching loss and improves system large stability and reduces the possible power consumption to the greatest extend. The frequency sub harmonic oscillation. WS2285 also have multiform control also eliminates the audio noise at any loading general recovery protection mode. The main function is conditions. described as below: Oscillator Operation Startup Current and Startup Control The switching frequency is internally fixed at 65 kHz. No Startup current of WS2285 is designed to be extremely low external frequency setting components are required for PCB at 5uA, so that VCC could be charged up above UVLO design simplification. threshold level and device starts up quickly. A large value startup resistor can therefore be used to minimize the power Current Sensing and Leading Edge Blanking loss, predigest the design of startup circuit and provides Cycle-by-Cycle current limiting is offered in WS2285. The reliable startup in application. For the design of AC/DC switch current is detected by a sense resistor into the sense adaptor with universal input range, a startup resistor of 2 MΩ, pin. An internal leading edge blanking circuit chops off the 1/8 W could be used together with a VCC capacitor to sense voltage spike at initial MOSFET on state due to provide a fast startup and low power dissipation solution. snubber diode reverse recovery so that the external RC filtering on sense input is no longer required. The current Operating Current limit comparator is disabled and thus cannot turn off the The operating current of WS2285 is low at 1.8mA. Excellent internal MOSFET during the blanking period. PWM duty efficiency is achieved with low operating current together cycle is determined by the current sense input voltage and and extended burst mode control circuit. the FB input voltage. Soft Start Internal Synchronized Slope Compensation WS2285 features an internal 4ms soft start to soften the Built-in slope compensation circuit adds slope voltage onto electrical stress occurring in the power supply during startup. the current sense input voltage for PWM generation. This It is activated during the power on sequence. As soon as greatly enhances the close loop stability at CCM and VCC reaches UVLO ( OFF ), the CS peak voltage is prevents possible sub harmonic oscillation and thus reduces gradually increased from 0.15V to the maximum level. Every the output ripple voltage. restart up is followed by a soft start. Gate Drive Extended Burst Mode Operation The gate drive strength which is too weak leads to over At zero load or light load, most of the power dissipation of switch loss of MOSFET while too strong gate drive output the switching power supply comes from the MOSFET compromises in the over EMI. A good tradeoff between switching loss, the core loss of the transformer and the loss output strength and dead time control is achieved through on the snubber circuit. The magnitude of power loss is in the design of the built-in totem pole gate. The low standby proportion to the number of switching events within a period dissipation and good EMI system design is easier to achieve of time. Therefore reducing the switch event leads to through this dedicated devise. For MOSFET gate protection, reduction on the power loss and thus saving the energy. an internal 12V clamp is added at higher than expected VCC W/T-D017-Rev.A/2 May.2014 WINSEM I M ICROELECTRONICS WINSEM I M ICROELECTRONICS Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WINSEM I M ICROELECTRONICS WINSEM I M ICROELECTRONICS WINSEM I M ICROELECTRONICS 0612 WS2285 Product Description input. condition when FB input voltage exceeds power limit threshold value for more than TD_PL, control circuit reacts Protection Controls to shut down the output power MOSFET. Device restarts Excellent system stability is achieved by the comprehensive when VCC voltage drops below UVLO limit. It is clamped protection of WS2285. Including Cycle-by-Cycle current when VCC is higher than threshold value. The power limiting (OCP), Over Load Protection (OLP) and over MOSFET is shut down when VCC drops below UVLO limit voltage clamp, VCC Clamp, Under Voltage Lockout on VCC and device enters power on start-up sequence thereafter. (UVLO), OTP and OVP shut down latch. At overload WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 8/10 WS2285 Product Description Package Information DIP8 Package Outline Dimensions D2 θ1 C1 C C4 θ2 C2 C3 θ3 D1 A2 A5 A3 A1 D A4 B A Winsemi Dimensions in Millimeters Symbol Min Max Min Max A 9.00 9.50 0.354 0.374 B 6.10 6.60 0.240 0.260 C 3.0 3.4 0.118 0.134 A1 1.474 1.574 0.058 0.062 A2 0.41 0.53 0.016 0.021 A3 2.44 2.64 0.096 0.104 A4 0.51TYP 0.02TYP A5 0.99TYP 0.04TYP C1 6.6 C2 7.30 0.260 0.50TYP 0.287 0.02TYP C3 3.00 3.40 0.118 0.134 C4 1.47 1.65 0.058 0.065 D 7.62 9.3 0.300 0.366 D1 0.24 0.32 0.009 0.013 D2 WIN SEM I Dimensions in Inches 7.62TYP M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I 0.3TYP M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 9/10 WS2285 Product Description NOTE: 1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 2.Please do not exceed the absolute maximum ratings of the device when circuit designing. 3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is subject to change without prior notice. CONTACT: Winsemi Microelectronics Co., Ltd. ADD:Futian District, ShenZhen Tian An Cyber Tech Plaza two East Wing 1002 Post Code : 518040 Tel : +86-755-8250 6288 FAX : +86-755-8250 6299 Web Site : www.winsemi.com WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 10/10