P10N60 WF WFP Silicon N-Channel MOSFET Features � 10A,600V,RDS(on)(Max 0.75Ω)@VGS=10V � Ultra-low Gate Charge(Typical 34nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage(VISO=4000V AC) � Improved dv/dt capability General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a highrugged avalanche characteristics. This devices is specially wellsuited for high efficiency switch mode power supplies , power factor correction, UPS and a electronic lamp ballast base on half bridge. Absolute Maximum Ratings Symbol VDSS Parameter Value Units Drain Source Voltage 600 V Continuous Drain Current(@Tc=25℃) 10* A Continuous Drain Current(@Tc=100℃) 6.0* A 40* A ±30 V ID IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note2) 713 mJ EAR Repetitive Avalanche Energy (Note1) 18 mJ dv/dt Peak Diode Recovery dv /dt (Note3) 4.5 V/ ns Total Power Dissipation(@Tc=25℃) 150 W Derating Factor above 25℃ 0.4 W/℃ -55~150 ℃ 300 ℃ PD TJ,Tstg TL Junction and Storage Temperature Channel Temperature *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter Value Min Typ Max Units RQJC Thermal Resistance , Junction -to -Case - - 0.83 ℃/W RQJA Thermal Resistance , Junction-to -Ambient - - 62.5 ℃/W Rev.A Sep.2010 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. P10N60 WF WFP Electrical Characteristics(Tc=25℃) Characteristics Symbol Gate leakage current Test Condition Min Type Max Unit IGSS VGS=±30V,VDS=0V - - ±100 nA V(BR)GSS IG=±10 µA,VDS=0V ±30 - - V IDSS VDS=600V,VGS=0V - - 1 µA V(BR)DSS ID=250 µA,VGS=0V 600 - - V Gate threshold voltage VGS(th) VDS=10V,ID=250 µA 3 - 4.5 V Drain -source ON resistance RDS(ON) VGS=10V,ID=4.75A - 0.66 0.75 Ω Forward Transconductance gfs VDS=50V,ID=4.75A - 8.2 - S Input capacitance Ciss VDS=25V, - 1610 2065 Reverse transfer capacitance Crss VGS=0V, - 19 25 Output capacitance Coss f=1MHz - 156 210 tr VDD=300V, - 68 91 ton ID=10A, - 109 150 tf RG=25Ω, - 214 300 - 85 165 - 34 45 - 6.9 - - 12 - Min Type Max Unit Gate-source breakdown voltage Drain cut -off current Drain -source breakdown voltage Rise time Turn-on time Switching time pF ns Fall time Turn-off time (Note4,5) toff Total gate charge(gate-source VDD=480V, Qg plus gate-drain) VGS=10V, nC Gate-source charge Qgs Gate-drain("miller") Charge Qgd ID=10A (Note4,5) Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Continuous drain reverse current IDR - - - 10 A Pulse drain reverse current IDRP - - - 38 A Forward voltage(diode) VDSF IDR=10A,VGS=0V - 1.05 1.4 V Reverse recovery time trr IDR=10A,VGS=0V, - 442 633 ns Reverse recovery charge Qrr dIDR / dt =100 A / µs - 2.16 3.24 µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=14.5mH IAS=10A,VDD=50V,RG=0Ω ,Starting TJ=25℃ 3.ISD≤10A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2% 5. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 Steady, keep you advance P10N60 WF WFP Fig.1 On-State Characteristics Fig.3 Capacitance Variation vs Drain voltage Fig.5 On-Resistance Variation vs Junction Temperature Fig.2 Transfer Characteristics Fig.4 On-Resistance Variation Energy vs Drain current and Gate Voltage Fig.6 Gate Charge Characteristics 3/7 Steady, keep you advance P10N60 WF WFP Fig.7 Maximum Safe Operation Area Fig.8 Diode Forward voltage Variation vs Source Current and Temperature Fig.9 Transient Thermal Response curve 4/7 Steady, keep you advance P10N60 WF WFP Fig.10 Gate Test circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Uncamped Inductive Switching Test Circuit & Waveform 5/7 Steady, keep you advance P10N60 WF WFP Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, keep you advance P10N60 WF WFP TO-220 Package Dimension Unit:mm 7/7 Steady, keep you advance