WFF4N60 Silicon N-Channel MOSFET Features � 4A,600V,RDS(on)(Max 2.5Ω)@VGS=10V � Ultra-low Gate Charge(Typical 16nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage(VISO=4000V AC) � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast. Absolute Maximum Ratings Symbol VDSS Parameter Value Units 600 V Continuous Drain Current(@Tc=25℃) 4* A Continuous Drain Current(@Tc=100℃) 2.5* A 16* A ±30 V Drain Source Voltage ID IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note2) 240 mJ EAR Repetitive Avalanche Energy (Note1) 10 mJ dv/dt Peak Diode Recovery dv /dt (Note3) 4.5 V/ ns 33 W 0.26 W/℃ -55~150 ℃ 300 ℃ Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ,Tstg TL Junction and Storage Temperature Channel Temperature *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter Value Min Typ Max Units RQJC Thermal Resistance , Junction -to -Case - - 3.79 ℃/W RQJA Thermal Resistance , Junction-to -Ambient - - 62.5 ℃/W Rev.A Sep.2010 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WFF4N60 Electrical Characteristics(Tc=25℃) Characteristics Symbol Gate leakage current Gate-source breakdown voltage Min Type Max Unit IGSS VGS=±30V,VDS=0V - - ±100 nA V(BR)GSS IG=±10 µA,VDS=0V ±30 - - V VDS=600V,VGS=0V - - 10 µA VDS=480V,Tc=125℃ - 100 µA Drain cut -off current Drain -source breakdown voltage Test Condition IDSS V(BR)DSS ID=250 µA,VGS=0V 600 - - V Gate threshold voltage VGS(th) VDS=10V,ID=250 µA 2 - 4 V Drain -source ON resistance RDS(ON) VGS=10V,ID=3.25A - 1.8 2.5 Ω Input capacitance Ciss VDS=25V, - 545 670 Reverse transfer capacitance Crss VGS=0V, - 7 10 Output capacitance Coss f=1MHz - 70 90 tr VDD=300V, - 10 30 ton ID=4.4A, - 35 80 tf RG=25Ω, - 45 100 - 20 50 - 16 20 - 3.4 - - 7 - Min Type Max Unit Rise time Turn-on time Switching time pF ns Fall time Turn-off time (Note4,5) toff Total gate charge(gate-source VDD=480V, Qg plus gate-drain) VGS=10V, nC Gate-source charge Qgs Gate-drain("miller") Charge Qgd ID=4.4A (Note4,5) Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Continuous drain reverse current IDR - - - 4 A Pulse drain reverse current IDRP - - - 17.6 A Forward voltage(diode) VDSF IDR=4.4A,VGS=0V - - 1.4 V Reverse recovery time trr IDR=4.4A,VGS=0V, - 390 - ns Reverse recovery charge Qrr dIDR / dt =100 A / µs - 2.2 - µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=18.5mH IAS=4.4A,VDD=50V,RG=0Ω ,Starting TJ=25℃ 3.ISD≤4A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2% 5. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 Steady, keep you advance WFF4N60 Fig.1 On-State Characteristics Fig.3 On Resistance variation vs Fig.2 Transfer Current characteristics Fig.4 Body Diode Forward Voltage Variation vs Source Current Drain Current and temperature Fig.5 On-Resistance Variation vs Fig.6 Gate Charge Characteristics Junction Temperature 3/7 Steady, keep you advance WFF4N60 Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain Current vs Case Temperature Fig.9 Transient Thermal Response curve 4/7 Steady, keep you advance WFF4N60 Fig.10 Gate Test circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Uncamped Inductive Switching Test Circuit & Waveform 5/7 Steady, keep you advance WFF4N60 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, keep you advance WFF4N60 TO-220F Package Dimension Unit:mm 7/7 Steady, keep you advance