SPN1028 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1028 is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 640mA DC and can deliver pulsed currents up to 950mA. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. APPLICATIONS Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. High saturation current capability. Direct Logic-Level Interface: TTL/CMOS Battery Operated Systems Solid-State Relays FEATURES 30V/0.95A , RDS(ON)= 550mΩ@VGS=4.5V 30V/0.75A , RDS(ON)= 650mΩ@VGS=2.5V 30V/0.65A , RDS(ON)=850mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-563 (SC-89-6L) package design PIN CONFIGURATION( SOT-563 / SC-89-6L ) PART MARKING 2011/10/24 Ver.1 Page 1 SPN1028 Dual N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 S1 Source 1 2 G1 Gate 1 3 D2 Drain 2 4 S2 Source 2 5 G2 Gate 2 6 D1 Drain1 Part Number Package Part Marking SPN1028S56RGB SOT-563 28YW ORDERING INFORMATION ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPN1028S56RGB : Tape Reel ; Pb – Free ; Halogen –Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 30 V Gate –Source Voltage - Continuous VGSS ±12 V ID 0.64 A IDM 0.95 A PD 1.35 W TJ -55 ~ 150 ℃ Storage Temperature Range TSTG -55 ~ 150 ℃ Thermal Resistance-Junction to Ambient RθJA 375 ℃/W Continuous Drain Current(TJ=150℃) TA=25℃ Pulsed Drain Current () Power Dissipation TA=25℃ Operating Junction Temperature () Pulse width limited by safe operating area 2011/10/24 Ver.1 Page 2 SPN1028 Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage V(BR)DSS VGS=0V,ID=250Ua VGS(th) VDS=VGS,ID=250uA IGSS IDSS ID(on) 0.4 1.0 VDS=0V,VGS=±20V VDS=48V,VGS=0V TJ=25℃ VDS=48V,VGS=0V TJ=55℃ VDS≥ 4.5V,VGS =5V VGS=4.5V,ID=0.95A RDS(on) VGS=2.5V,ID=0.75A VGS=1.8V,ID=0.65A Gfs VDS = 10 V, ID = 0.4 A VSD 30 VGS = 0 V, IS = 0.15A ±30 V uA 30 uA 100 0.7 A 0.45 0.50 0.70 1.0 0.55 0.65 0.85 0.8 1.2 1.2 1.5 Ω S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Time Turn-Off Time 2011/10/24 Ver.1 VDD = 10 V, ID = 0.6 A, VGS = 4.5 V td(off) tf nC 0.3 7.2 VDS = 10V, f = 1 MHz, VGS = 0V pF 17 1.6 td(on) tr 0.2 VDD = 10V, ID = 0.5A RG = 6Ω VGEN = 4.5V RL = 10Ω 5 10 8 15 10 18 1.2 2.8 Page 3 ns SPN1028 Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2011/10/24 Ver.1 Page 4 SPN1028 Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2011/10/24 Ver.1 Page 5 SPN1028 Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2011/10/24 Ver.1 Page 6 SPN1028 Dual N-Channel Enhancement Mode MOSFET SOT-563 (SC-89-6L) PACKAGE OUTLINE 2011/10/24 Ver.1 Page 7 SPN1028 Dual N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. © The SYNC Power logo is a registered trademark of SYNC Power Corporation © 2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan, 115, R.O.C Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 © http://www.syncpower.com 2011/10/24 Ver.1 Page 8