SPN6561 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN6561 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter FEATURES N-Channel 30V/2.8A,RDS(ON)= 60mΩ@VGS=10V 30V/2.3A,RDS(ON)= 80mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-6L package design PIN CONFIGURATION( SOT-23-6L ) PART MARKING 2009/12/05 Ver.2 Page 1 SPN6561 Dual N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 G1 Gate 1 2 S2 Source 2 3 G2 Gate 2 4 D2 Drain 2 5 S1 Source 1 6 D1 Drain1 ORDERING INFORMATION Part Number Package Part Marking SPN6561S26RG SOT-23-6L 61YW SPN6561S26RGB SOT-23-6L 61YW ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPN6561S26RG : Tape Reel ; Pb – Free ※ SPN6561S26RGB : Tape Reel ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 30 V Gate –Source Voltage VGSS ±20 V Continuous Drain Current(TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient 2009/12/05 Ver.2 T ≤ 10sec Steady State ID 2.8 2.3 A IDM 10 A IS 1.25 A PD 1.15 0.75 W TJ -55/150 ℃ TSTG -55/150 50 90 ℃ RθJA ℃/W Page 2 SPN6561 Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA Gate Leakage Current IGSS Forward Transconductance gfs VDS=0V,VGS=±20V VDS=30V,VGS=1.0V VDS=30V,VGS=0.0V TJ=55℃ VDS≧4.5V,VGS=10V VDS≧4.5V,VGS=4.5V VGS = 10V,ID=2.8A VGS =4.5V,ID=2.1A VDS=4.5V,ID=2.5A Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Diode Forward Voltage VSD IS=1.25A,VGS=0V Drain-Source On-Resistance RDS(on) 30 1.0 3.0 ±100 1 10 6 4 V nA uA A 0.043 0.056 4.6 0.060 0.080 0.8 1.2 4.5 10 Ω S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Time Turn-Off Time 2009/12/05 Ver.2 VDS=15VGS=10V ID≡2.5 1.0 VDS=15VGS=0V f=1MHz td(off) tf 240 pF 110 17 td(on) tr nC 0.8 VDD=15RL=15 ID≡1.0A,VGEN=10 RG=6Ω 8 20 12 30 17 35 8 20 ns Page 3 SPN6561 Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/12/05 Ver.2 Page 4 SPN6561 Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/12/05 Ver.2 Page 5 SPN6561 Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/12/05 Ver.2 Page 6 SPN6561 Dual N-Channel Enhancement Mode MOSFET SOT-23-6L PACKAGE OUTLINE 2009/12/05 Ver.2 Page 7 SPN6561 Dual N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 9F-5, No.3-2, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2009/12/05 Ver.2 Page 8