SPN7002K N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN7002K is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 640mA DC and can deliver pulsed currents up to 950mA. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. APPLICATIONS FEATURES 60V/0.50A , RDS(ON)= 2.0Ω@VGS=10V 60V/0.20A , RDS(ON)= 4.0Ω@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design PIN CONFIGURATION(SOT-23) Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. High saturation current capability. Direct Logic-Level Interface: TTL/CMOS Battery Operated Systems Solid-State Relays PART MARKING 2012/06/20 Ver.3 Page 1 SPN7002K N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 G Gate 2 S Source 3 D Drain Part Number Package Part Marking SPN7002KS23RGB SOT-23 NKXX ORDERING INFORMATION ※ SPN7002KS23RGB : Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 60 V Gate –Source Voltage - Continuous VGSS ±20 V ID 0.3 A IDM 0.8 A PD 0.35 W TJ -55 ~ 150 ℃ Storage Temperature Range TSTG -55 ~ 150 ℃ Thermal Resistance-Junction to Ambient RθJA 350 ℃/W Continuous Drain Current(TJ=150℃) TA=25℃ Pulsed Drain Current (∗ ∗) Power Dissipation TA=25℃ Operating Junction Temperature (∗ ∗) Pulse width limited by safe operating area 2012/06/20 Ver.3 Page 2 SPN7002K N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. 1.7 2.5 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=250Ua VGS(th) VDS=VGS,ID=250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS VDS=0V,VGS=±20V VDS=60V,VGS=0V TJ=25℃ VDS=48V,VGS=0V TJ=70℃ VGS=10V,ID=0.50A VGS= 4.5V,ID=0.20A VDS = 10 V, ID = 0.6 A Drain-Source On-Resistance RDS(on) Forward Transconductance Gfs(1) Diode Forward Voltage VSD(1) VGS = 0 V, IS = 0.5A 60 1.0 ±30 V uA 1 uA 100 2.0 3.0 3.0 3.5 0.08 Ω S 1.3 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Time Turn-Off Time 0.6 VDD = 50 V, ID = 0.6 A, VGS = 4.5 V td(off) nC 0.2 0.2 30 VDS = 25 V, f = 1 MHz, VGS = 0 50 7 pF 4 td(on) tr 0.8 2 VDD = 30 V, ID = 0.6 A RG = 3.3Ω VGS = 10.0 V RD = 52Ω tf 15 ns 8 11 (1) Pulsed: Pulse duration ≦ 300 µs, duty cycle≦ 2 %. (2) Pulse width limited by safe operating area. 2012/06/20 Ver.3 Page 3 SPN7002K N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2012/06/20 Ver.3 Page 4 SPN7002K N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2012/06/20 Ver.3 Page 5 SPN7002K N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2012/06/20 Ver.3 Page 6 SPN7002K N-Channel Enhancement Mode MOSFET SOT-23 PACKAGE OUTLINE Symbol A A1 A2 b c D E E1 e e1 L L1 θ 2012/06/20 Ver.3 Dimensions In Millimeters Min 0.820 0.000 0.820 0.300 0.080 2.800 1.200 2.200 Max 1.200 0.100 1.100 0.500 0.150 3.000 1.400 2.550 0.95 TYP 1.800 2.000 0.529 REF 0.200 0.500 0? 8? Dimensions In Inches Min Max 0.0323 0.0430 0.0000 0.0040 0.0323 0.0390 0.0120 0.0200 0.0030 0.0060 0.1100 0.1180 0.0470 0.0550 0.0866 0.1000 0.037 TYP 0.0710 0.0790 0.0208 REF 0.0079 0.0200 0? 8? Page 7 SPN7002K N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan, 115, R.O.C Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2012/06/20 Ver.3 Page 8