ROHM DTA115TM

DTA115TM / DTA115TE / DTA115TUA /
DTA115TKA / DTA115TSA
Transistors
Digital transistors (built-in resistor)
DTA115TM / DTA115TE / DTA115TUA /
DTA115TKA / DTA115TSA
zExternal dimensions (Unit : mm)
DTA115TM
1.2
0.8
(3)
0.8
0.2
(2)
0.4 0.4
1.2
0.32
0.2
0.13
0~0.1
0.5
0.22
(1)
1.6
(2)
0.2
(3)
1.0
(1)
0.5 0.5
DTA115TE
(1) Base
(2) Emitter
(3) Collector
0.15Max.
0.2
ROHM : VMT3
0.3
zFeatures
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors.
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input,
and parasitic effects are almost completely eliminated.
3) Only the on / off conditions need to be set for
operation, making device design easy.
4) Higher mounting densities can be achieved.
0.8
E
0.7
2.0
(2)
R1
(1)
DTA115TUA
1.25
2.1
Each lead has same dimensions
0.9
0.7
0.15
0.2
E : Emitter
C : Collector
B : Base
(1) Emitter
(2) Base
(3) Collector
0~0.1
0.1Min.
ROHM : UMT3
EIAJ : SC-70
0.95 0.95
1.9
2.9
(3)
0.4
(1)
DTA115TKA
(2)
1.6
2.8
0.8
0.15
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
0~0.1
0.3Min.
ROHM : SMT3
EIAJ : SC-59
DTA115TSA
1.1
C
B
(1) Emitter
(2) Base
(3) Collector
1.3
0~0.1
(3)
ROHM : EMT3
EIAJ : SC-75A
0.65 0.65
0.1Min.
0.3
0.55
0.15
1.6
zEquivalent circuit
2
(15Min.)
3Min.
3
4
0.45
Taping specifications
2.5
0.5 0.45
5
ROHM : SPT
EIAJ : SC-72
(1)(2)(3)
(1) Emitter
(2) Collector
(3) Base
Rev.A
1/2
DTA115TM / DTA115TE / DTA115TUA /
DTA115TKA / DTA115TSA
Transistors
zAbsolute maximum ratings (Ta=25°C)
Symbol
Limits
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
IC
−100
mA
Parameter
Collector current
150
DTA115TM / DTA115TE
Collector power
dissipation
DTA115TUA / DTA115TKA
200
PC
DTA115TSA
mW
300
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
zPackage, marking, and packaging specifications
DTA115TM
DTA115TE
Package
VMT3
EMT3
UMT3
SMT3
Marking
99
99
99
99
−
Packaging code
T2L
TL
T106
T146
TP
Basic ordering unit (pieces)
8000
3000
3000
3000
5000
Part No.
DTA115TUA DTA115TKA DTA115TSA
SPT
zElectrical characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
−50
−
−
V
IC= −50µA
Collector-emitter breakdown voltage
BVCEO
−50
−
−
BVEBO
−5
−
−
V
V
IC= −1mA
Emitter-base breakdown voltage
Collector cutoff current
ICBO
−
−
−0.5
µA
VCB= −50V
Emitter cutoff current
IEBO
−
−
−0.5
µA
VEB= −4V
VCE(sat)
−
−
−0.3
IC/IB= −1mA/−0.1mA
hFE
100
250
600
V
−
Input resistance
R1
100
130
kΩ
−
Transition frequency
fT
70
−
250
−
MHZ
VCE= −10V , IE=5mA , f=100MHZ ∗
Parameter
Collector-emitter saturation voltage
DC current transfer ratio
Conditions
IE= −50µA
IC= −1mA , VCE= −5V
∗Transition frequency of the device.
1k
VCE=5V
Ta=25°C
Ta=100°C
DC CURRENT GAIN : hFE
500
200
100
Ta= −40°C
50
20
10
5
2
1
10µ
20µ
50µ 100µ 200µ
500µ 1m
2m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain
vs. Collector current
5m
10m
CORRECTOR SATURATION VOLTAGE : VCE(sat) (V)
zElectrical characteristics curves
1
IC/IB=10/1
500m
200m
Ta=100°C
100m
Ta=25°C
50m
20m
Ta= −40°C
10m
5m
2m
1m
10µ
20µ
50µ 100µ 200µ
500µ 1m
2m
5m
10m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
Rev.A
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
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