Bipolar WPY Process

HIGH PERFORMANCE
ANALOG FOUNDRY
BIPOLAR WPY PROCESS
SUMMARY
WPY is a 1.0 micron versatile low capacitance linear bipolar process providing excellent functionality at low cost.
Features such as high value poly resistors, nitride capacitors, Schottky and Zener diodes and two-layer metal (including thick Metal2) allow low current circuits to be built
with high packing densities.
npn Cross-Section
Emitter
Base
Collector
Table 1: NPN Parameters (0.6 x 4.0 µm emitter)
Parameter
Condition
Value
Units
fT
Vce=2 V
4.0
GHz
HFE
Ic=10 µA Vce=2 V
VAF
85
120
V
34
V
BVCBO
Ic=10 µA
BVCEO
Ic=10 µA
24
V
CJE
Vbe=0
10
fF
CJC
Vbc=0
8
fF
CJS
Vcs=0
97
fF
L OC OS
L OC OS
IS
IS
DC
E pitaxy (n-)
Table 2: Lateral PNP Parameters
BP
BP
BN
S u b s tra te (p -)
Parameter
Condition
Value
Units
fT
Vce=2 V
20
MHz
HFE
Ic=10 µA Vce=2 V
Vsub=-2 V
55
VAF
Minimum geometry npn fT curve
5 .0
50
V
BVCEO
Ic=1 µA
23
V
CJS
Vcs=0
3
fF
4 .0
3 .0
Vc e = 2 V
fT (G H z )
2 .0
1 .0
0 .0
1 .E - 0 6
1 .E - 0 5
1 .E -0 4
1 .E -0 3
1 .E - 0 2
IC ( A )
Features
High-speed NPN transistors
Lateral PNP transistors
BVCEO 24 V typical (20 V
min)
0.9 fF/sq µm Nitride
capacitor
3 resistors including HV
polysilicon resistor
Schottky Diodes 0.5 V Vf
Zener Diodes 5.3 V BVz
ESD Protection Kit
High packing density
Very low leakage currents
Applications
Linear applications
DC-DC converters
Switching regulators
Power management
Table 3: Resistor Values
Type
Value
Units
Polysilicon
3.2 ± 0.5
kΩ
Base
550 ± 50
Ω
PR
67.5 ± 7.5
Ω
Table 4: Key Design Rules
Feature
Min µm
Spacing
Emitter
1.0 x 2.5 or
1.5 x 1.5
Poly (EP) resistor width
1.5
2.0
Base and PR resistor
width
3.0
1.5
Contact
1.0 x 2.5 or
1.5 x 1.5
1.4
1st layer metal
2.0
2.0
2nd layer metal
4.0
3.0
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© 2006, Zarlink Semiconductor Inc. All Rights Reserved.
Publication Number MS5944
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